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Abdul Kadir

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2004-2009 Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research, Mumbai, Maharashtra, India 
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Arnab Bhattacharya grad student 2004-2009 Tata Institute of Fundamental Research

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Zhang L, Lee KH, Kadir A, et al. (2018) Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding Japanese Journal of Applied Physics. 57: 51002
Kadir A, Srivastava S, Li Z, et al. (2018) Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate Thin Solid Films. 663: 73-78
Zhang L, Lee KH, Riko IM, et al. (2017) MOCVD growth of GaN on SEMI-spec 200 mm Si Semiconductor Science and Technology. 32: 65001
Kok IJY, Soh CB, Sang NX, et al. (2017) Regrowth of GaN on Strain-relief porous GaN template fabricated by Anodized Alumina Oxide mask Procedia Engineering. 215: 1-8
Kadir A, Huang CC, Lee KEK, et al. (2015) Response to “Comment on ‘Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system’” [Appl. Phys. Lett. 106, 176101 (2015)] Applied Physics Letters. 106: 176102
Hatui N, Frentrup M, Rahman AA, et al. (2015) MOVPE growth of semipolar (112¯2) Al1-xInxN across the alloy composition range (0 ≤ x ≤ 0.55) Journal of Crystal Growth. 411: 106-109
Kadir A, Huang CC, Lee KEK, et al. (2014) Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system Applied Physics Letters. 105: 232113
Pristovsek M, Kadir A, Kneissl M. (2013) Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy Japanese Journal of Applied Physics. 52
Pristovsek M, Kadir A, Meissner C, et al. (2013) Growth mode transition and relaxation of thin InGaN layers on GaN (0001) Journal of Crystal Growth. 372: 65-72
De S, Layek A, Bhattacharya S, et al. (2012) Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes Applied Physics Letters. 101
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