Marion B. Reine

Affiliations: 
Physics MIT Lincoln Laboratory 
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"Marion Reine"
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Publications

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Reine M, Pinkie B, Schuster J, et al. (2014) New model for the ideal nBn infrared detector Proceedings of Spie - the International Society For Optical Engineering. 9070
Reine M, Pinkie B, Schuster J, et al. (2013) Numerical simulation of InAs nBn infrared detectors with N-Type barrier layers Proceedings of Spie - the International Society For Optical Engineering. 8704
Reine M. (2013) Raymond S. Balcerak, Paul W. Kruse, Thad D. Pickenpaugh, and Jan F. Schetzina: In Memoriam Journal of Electronic Materials. 42: 3001-3005
Reine M, Schuster J, Pinkie B, et al. (2013) Numerical simulation and analytical modeling of inas nBn infrared detectors with p-type barriers Journal of Electronic Materials. 42: 3015-3033
Schuster J, Pinkie B, Reine M, et al. (2012) Numerical simulation of InAs/AlAsSb nBn detector arrays Proceedings of Spie. 8353: 835330
Smith FTJ, Lamarre P, Marciniec J, et al. (2010) HgCdTe LWIR p-on-n photodiodes formed by arsenic diffusion from the vapor phase Proceedings of Spie - the International Society For Optical Engineering. 7780
D'Orsogna D, Lamarre P, Bellotti E, et al. (2009) A novel stress characterization technique for the development of low-stress ohmic contacts to HgCdTe Journal of Electronic Materials. 38: 1698-1706
Lamarre P, Fulk C, D'Orsogna D, et al. (2009) Characterization of dislocations in HgCdTe heteroepitaxial layers using a new substrate removal technique Journal of Electronic Materials. 38: 1746-1754
Reine MB, Marciniec JW, Wong KK, et al. (2008) Characterization of HgCdTe MWIR back-illuminated electron-initiated avalanche photodiodes Journal of Electronic Materials. 37: 1376-1386
Parodos T, Fitzgerald EA, Caster A, et al. (2007) Effect of dislocations on VLWIR HgCdTe photodiodes Journal of Electronic Materials. 36: 1068-1076
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