George D. Watkins
Affiliations: | 1952-1975 | General Electric Corporate Research and Development, Schenectady, NY, United States | |
| 1975-1996 | Lehigh University, Bethlehem, PA, United States |
Area:
Defects in SemiconductorsWebsite:
https://www.lehigh.edu/~gdw0/watkins/Google:
"George Daniels Watkins" OR "George D Watkins"Bio:
http://www.nasonline.org/member-directory/members/20345.html
https://history.aip.org/phn/11610037.html
https://www.aps.org/programs/honors/prizes/prizerecipient.cfm?first_nm=George&last_nm=Watkins&year=1978
http://www.epr-newsletter.ethz.ch/eprnl-pdfs-free/vol16_1_old.pdf
https://www.researchgate.net/profile/George_Watkins
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Parents
Sign in to add mentor| Robert Vivian Pound | grad student | 1952 | Harvard | |
| (An R.F. Spectrometer with Applications to Studies of Nuclear Magnetic Resonance Absorption in Solids) | ||||
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Publications
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| Anderson FG, Milligan RF, Watkins GD. (2019) EPR investigation of Pt- in silicon. Physical Review. B, Condensed Matter. 45: 3279-3286 |
| Watkins GD. (2013) Intrinsic Point Defects in Semiconductors 1999 Materials Science and Technology. 121-165 |
| Vlasenko LS, Watkins GD. (2006) Intrinsic defects in ZnO: A study using optical detection of electron paramagnetic resonance Physica B-Condensed Matter. 376: 677-681 |
| Watkins GD. (2006) Understanding the Jahn–Teller distortions for the divacancy and the vacancy–group-V-atom pair in silicon Physica B-Condensed Matter. 376: 50-53 |
| Vlasenko LS, Watkins GD. (2005) Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K Physical Review B. 72: 35203 |
| Vlasenko LS, Watkins GD. (2005) Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO Physical Review B. 71: 125210 |
| Gorelkinskii YV, Watkins GD. (2004) Defects produced in ZnO by 2.5-MeV electron irradiation at 4.2 K: Study by optical detection of electron paramagnetic resonance Physical Review B. 69: 115212 |
| Chow KH, Vlasenko LS, Johannesen P, et al. (2004) Publisher's Note: Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance [Phys. Rev. B 69, 045207 (2004)] Physical Review B. 69: 89905 |
| Johannesen P, Zakrzewski A, Vlasenko LS, et al. (2004) Publisher's Note: Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance [Phys. Rev. B 69, 045208 (2004)] Physical Review B. 69: 89904 |
| Johannesen P, Zakrzewski A, Vlasenko LS, et al. (2004) Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance Physical Review B. 69: 45208 |