William T. Paul

Affiliations: 
Physics Harvard University, Cambridge, MA, United States 
Area:
High Pressure in Semiconductor Physics
Website:
https://www.physics.harvard.edu/people/facpages/paul
Google:
"William T. Paul"
Bio:

https://www.gf.org/fellows/all-fellows/william-paul/

Mean distance: 13.9
 
SNBCP

Children

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Richard Zallen grad student
Manuel Cardona grad student 1959 Harvard
Garret Moddel grad student 1981 Harvard (E-Tree)
Jan Tauc research scientist 1961-1962 Harvard
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Publications

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Cheong HM, Burnett JH, Paul W, et al. (2019) Hydrostatic-pressure dependence of band offsets in GaAs/AlxGa1-xAs heterostructures. Physical Review. B, Condensed Matter. 49: 10444-10449
Cheong HM, Burnett JH, Paul W, et al. (2019) Hydrostatic-pressure coefficient of the direct band-gap energy of AlxGa1-xAs for x=0-0.35. Physical Review. B, Condensed Matter. 53: 10916-10920
Cheong HM, Wickboldt P, Pang D, et al. (2019) Effects of hydrostatic pressure on the photoluminescence of porous silicon. Physical Review. B, Condensed Matter. 52: 11577-11579
Mackenzie KD, Burnett JH, Eggert JR, et al. (2019) Comparison of the structural, electrical, and optical properties of amorphous silicon-germanium alloys produced from hydrides and fluorides. Physical Review. B, Condensed Matter. 38: 6120-6136
Paul W, Burnett JH, Cheong HM. (2008) Role of high pressures in semiconductor research High‐Pressure Science and Technology. 309: 545-548
Paul W. (2004) Early demonstrations (1952-64) of the usefulness of high pressure in semiconductor research Physica Status Solidi B-Basic Solid State Physics. 241: 3095-3098
Chen C, Lubianiker Y, Cohen JD, et al. (1998) The Electronic Structure, Metastability and Transport Properties of Optimized Amorphous Silicon-Germanium Alloys Mrs Proceedings. 507
Marques FC, Wickboldt P, Pang D, et al. (1998) Stress and thermomechanical properties of amorphous hydrogenated germanium thin films deposited by glow discharge Journal of Applied Physics. 84: 3118-3124
Paul W. (1998) Chapter 1 High Pressure in Semiconductor Physics: A Historical Overview Semiconductors and Semimetals. 54: 1-48
Wickboldt P, Pang D, Paul W, et al. (1997) Ambipolar Phototransport (μτ e = μτ h ) Observed as an Intrinsic Property of a-SiGe:H Mrs Proceedings. 467
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