William T. Paul
Affiliations: | Physics | Harvard University, Cambridge, MA, United States |
Area:
High Pressure in Semiconductor PhysicsWebsite:
https://www.physics.harvard.edu/people/facpages/paulGoogle:
"William T. Paul"Bio:
https://www.gf.org/fellows/all-fellows/william-paul/
Mean distance: 13.9 | S | N | B | C | P |
Children
Sign in to add traineeRichard Zallen | grad student | ||
Manuel Cardona | grad student | 1959 | Harvard |
Garret Moddel | grad student | 1981 | Harvard (E-Tree) |
Jan Tauc | research scientist | 1961-1962 | Harvard |
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Publications
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Cheong HM, Burnett JH, Paul W, et al. (2019) Hydrostatic-pressure dependence of band offsets in GaAs/AlxGa1-xAs heterostructures. Physical Review. B, Condensed Matter. 49: 10444-10449 |
Cheong HM, Burnett JH, Paul W, et al. (2019) Hydrostatic-pressure coefficient of the direct band-gap energy of AlxGa1-xAs for x=0-0.35. Physical Review. B, Condensed Matter. 53: 10916-10920 |
Cheong HM, Wickboldt P, Pang D, et al. (2019) Effects of hydrostatic pressure on the photoluminescence of porous silicon. Physical Review. B, Condensed Matter. 52: 11577-11579 |
Mackenzie KD, Burnett JH, Eggert JR, et al. (2019) Comparison of the structural, electrical, and optical properties of amorphous silicon-germanium alloys produced from hydrides and fluorides. Physical Review. B, Condensed Matter. 38: 6120-6136 |
Paul W, Burnett JH, Cheong HM. (2008) Role of high pressures in semiconductor research High‐Pressure Science and Technology. 309: 545-548 |
Paul W. (2004) Early demonstrations (1952-64) of the usefulness of high pressure in semiconductor research Physica Status Solidi B-Basic Solid State Physics. 241: 3095-3098 |
Chen C, Lubianiker Y, Cohen JD, et al. (1998) The Electronic Structure, Metastability and Transport Properties of Optimized Amorphous Silicon-Germanium Alloys Mrs Proceedings. 507 |
Marques FC, Wickboldt P, Pang D, et al. (1998) Stress and thermomechanical properties of amorphous hydrogenated germanium thin films deposited by glow discharge Journal of Applied Physics. 84: 3118-3124 |
Paul W. (1998) Chapter 1 High Pressure in Semiconductor Physics: A Historical Overview Semiconductors and Semimetals. 54: 1-48 |
Wickboldt P, Pang D, Paul W, et al. (1997) Ambipolar Phototransport (μτ e = μτ h ) Observed as an Intrinsic Property of a-SiGe:H Mrs Proceedings. 467 |