José Menéndez
Affiliations: | Physics and Astronomy | Arizona State University, Tempe, AZ, United States |
Area:
semiconductorsWebsite:
https://webapp4.asu.edu/directory/person/25775Google:
"José Menéndez"Bio:
http://physics.asu.edu/sites/default/files/Curriculum_Jose_Menendez_0.pdf
Mean distance: 16 | S | N | B | C | P |
Cross-listing: Astronomy Tree
Parents
Sign in to add mentor| Manuel Cardona | grad student | 1985 | Universität Stuttgart | |
| (Ramanspektroscopische Untersuchungen der Phonon-Phonon und Elektron-Phonon Wechselwirkungen in tetraedisch koordinierten Halbleitern) | ||||
Children
Sign in to add trainee| Suchi Guha | grad student | 1996 | Arizona State |
| Lingyun Shi | grad student | 2003 | Arizona State |
| Vijay R. D'Costa | grad student | 2006 | Arizona State |
| Michael J. Canonico | grad student | 2009 | Arizona State |
| Sampriti Bagchi | grad student | 2011 | Arizona State |
| Jay Mathews | grad student | 2011 | Arizona State |
| Rachna Singh | grad student | 2011 | Arizona State |
BETA: Related publications
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Publications
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| Kouvetakis J, Wallace PM, Xu C, et al. (2023) Synthesis of High Sn Content GeSiSn (0.1 < < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications. Acs Applied Materials & Interfaces. 15: 48382-48394 |
| Menéndez J, Poweleit CD, Tilton SE. (2020) Temperature-dependent photoluminescence in Ge: Experiment and theory Physical Review B. 101 |
| Sims P, Wallace P, Liu L, et al. (2020) Synthesis of heteroepitaxial BP and related Al-B-Sb-As-P films via CVD of Al(BH4)3 and MH3 (M=P, As, Sb) at temperatures below 600 °C Semiconductor Science and Technology. 35: 085034 |
| Spencer G, Menéndez J. (2019) Comment on "Confined-to-propagating transition of LO phonons in GaAs/AlxGa1-xAs superlattices observed by picosecond Raman scattering" Physical Review Letters. 72: 1571 |
| Sinha K, Menéndez J. (2019) First- and second-order resonant Raman scattering in graphite. Physical Review. B, Condensed Matter. 41: 10845-10847 |
| Menéndez J. (2019) Tetrahedral semiconductors: Constancy of the midgap energies with respect to the vacuum level. Physical Review. B, Condensed Matter. 38: 6305-6307 |
| Xu C, Wallace PM, Ringwala DA, et al. (2019) Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties Applied Physics Letters. 114: 212104 |
| Xu C, Kouvetakis J, Menéndez J. (2019) Doping dependence of the optical dielectric function in n-type germanium Journal of Applied Physics. 125: 085704 |
| Xu C, Ringwala D, Wang D, et al. (2019) Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents Chemistry of Materials. 31: 9831-9842 |
| Menéndez J, Wallace P, Xu C, et al. (2019) Materials physics of GeSn-based semiconductor lasers Materials Today: Proceedings. 14: 38-42 |