Michele Amato
Affiliations: | Laboratoire de Physique des Solides (LPS) Université Paris-Saclay |
Area:
Computational materials science; Condensed matter physics; First-principles calculations; Density Functional TheoryGoogle:
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Publications
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| Marri I, Grillo S, Amato M, et al. (2023) Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core-Shell Nanocrystals. The Journal of Physical Chemistry. C, Nanomaterials and Interfaces. 127: 1209-1219 |
| Marri I, Amato M, Bertocchi M, et al. (2020) Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures. Physical Chemistry Chemical Physics : Pccp |
| Ossicini S, Marri I, Amato M, et al. (2020) Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase. Faraday Discussions |
| Galvão Tizei LH, Amato M. (2020) Electronic structure and optical properties of semiconductor nanowires polytypes The European Physical Journal B. 93 |
| Amato M, Ossicini S, Canadell E, et al. (2019) Preferential positioning, stability and segregation of dopants in hexagonal Si nanowires. Nano Letters |
| Fasolato C, De Luca M, Djomani D, et al. (2018) Crystalline, Phononic, and Electronic Properties of Heterostructured Polytypic Ge Nanowires by Raman Spectroscopy. Nano Letters |
| Marri I, Amato M, Guerra R, et al. (2018) First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications Physica Status Solidi (B). 255: 1700627 |
| David T, Liu K, Ronda A, et al. (2017) Tailoring strain and morphology of core-shell SiGe nanowires by low temperature Ge condensation. Nano Letters |
| Amato M, Kaewmaraya T, Zobelli A, et al. (2016) Crystal Phase Effects in Si Nanowire Polytypes and Their Homojunctions. Nano Letters |
| Amato M, Bertocchi M, Ossicini S. (2016) Work function bowing in Si1- xGex heterostructures: Ab initio results Journal of Applied Physics. 119 |