Vincent P. LaBella, Ph.D.
Affiliations: | 1993-1998 | Physics | Rensselaer Polytechnic Institute, Troy, NY, United States |
2002- | Physics | State University of New York, Albany, Albany, NY, United States |
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"Vincent LaBella"Mean distance: 14.78 | S | N | B | C | P |
Parents
Sign in to add mentorCarl Ventrice Jr. | grad student | 1993-1998 | RPI |
Leo J. Schowalter | grad student | 1993-1998 | RPI |
Paul M. Thibado | post-doc | 1998-2002 | University of Arkansas |
Children
Sign in to add traineeAndrew J. Stollenwerk | grad student | 2007 | SUNY Albany |
John J. Garramone | grad student | 2011 | SUNY Albany |
Joseph Abel | grad student | 2012 | SUNY Albany |
Robert Balsano | grad student | 2014 | SUNY Albany |
Akitomo Matsubayashi | grad student | 2014 | SUNY Albany |
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Publications
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Rogers J, Choi H, Gassner S, et al. (2019) Visualizing metal/HfO2/SiO2/Si(001) interface electrostatic barrier heights with ballistic hole emission microscopy Journal of Applied Physics. 126: 195302 |
Walsh LA, Green AJ, Addou R, et al. (2018) Fermi Level Manipulation Through Native Doping in the Topological Insulator BiSe. Acs Nano |
Nolting W, Durcan C, Gassner S, et al. (2018) Nanoscale Schottky barrier visualization utilizing computational modeling and ballistic electron emission microscopy Journal of Applied Physics. 123: 245302 |
Narasimham AJ, Pennock D, Potter GJ, et al. (2017) Economical rotatable holder for magnetotransport measurements Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 23201 |
Nolting W, Durcan C, LaBella VP. (2017) Detection of silicide formation in nanoscale visualization of interface electrostatics Applied Physics Letters. 110: 141606 |
Nolting W, Durcan C, Narasimham AJ, et al. (2016) Nanoscale Schottky barrier mapping of thermally evaporated and sputter deposited W/Si(001) diodes using ballistic electron emission microscopy Journal of Vacuum Science & Technology B. 34 |
Balsano R, Durcan C, Matsubayashi A, et al. (2016) Relating spatially resolved maps of the Schottky barrier height to metal/semiconductor interface composition Journal of Applied Physics. 119 |
Narasimham AJ, Green A, Matyi RJ, et al. (2015) Pulsed-N2 assisted growth of 5-20 nm thick β-W films Aip Advances. 5 |
Durcan CA, Balsano R, LaBella VP. (2015) Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy Journal of Applied Physics. 117: 245306 |
Matsubayashi A, Zhang Z, Lee JU, et al. (2014) Microstructure fabrication process induced modulations in CVD graphene Aip Advances. 4 |