Akitomo Matsubayashi

2014 Nanoscale Science and Engineering-Nanoscale Science State University of New York, Albany, Albany, NY, United States 
"Akitomo Matsubayashi"
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Vincent P. LaBella grad student 2014 SUNY Albany
 (Metal oxide growth, spin precession measurements and Raman spectroscopy of CVD graphene.)
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Balsano R, Durcan C, Matsubayashi A, et al. (2016) Relating spatially resolved maps of the Schottky barrier height to metal/semiconductor interface composition Journal of Applied Physics. 119
Zhang Z, Matsubayashi A, Grisafe B, et al. (2016) Characterization of magnetic Ni clusters on graphene scaffold after high vacuum annealing Materials Chemistry and Physics. 170: 175-179
Matsubayashi A, Zhang Z, Lee JU, et al. (2014) Microstructure fabrication process induced modulations in CVD graphene Aip Advances. 4
Narasimham AJ, Medikonda M, Matsubayashi A, et al. (2014) Fabrication of 5-20 nm thick β -W films Aip Advances. 4
Malladi G, Huang M, Murray T, et al. (2014) Synthesis and properties of ferromagnetic nanostructures embedded within a high-quality crystalline silicon matrix via ion implantation and nanocavity assisted gettering processes Journal of Applied Physics. 116
Matsubayashi A, Abel J, Sinha DP, et al. (2013) Characterization of metal oxide layers grown on CVD graphene Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31
Balsano R, Matsubayashi A, Labella VP. (2013) Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy Aip Advances. 3
Abel J, Matsubayashi A, Labella VP. (2012) Low cost cryogenic high vacuum sample holder for in-plane magneto-transport studies Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30
Abel J, Matsubayashi A, Murray T, et al. (2012) Fabrication of an electrical spin transport device utilizing a diazonium salt/hafnium oxide interface layer on epitaxial graphene grown on 6 H-SiC(0001) Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30
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