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Peiqi Xuan, Ph.D. - Publications

Affiliations: 
University of California, Berkeley, Berkeley, CA, United States 
Area:
nanoscale science
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2005 Lin J, Xuan P, Bokor J. Characterization of chemical vapor deposition growth yields of carbon nanotube transistors Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 6859-6861. DOI: 10.1143/Jjap.44.6859  0.483
2004 Liu H, Sin JKO, Xuan P, Bokor J. Characterization of the ultrathin vertical channel CMOS technology Ieee Transactions On Electron Devices. 51: 106-112. DOI: 10.1109/Ted.2003.821388  0.624
2004 Tseng YC, Xuan P, Javey A, Malloy R, Wang Q, Bokor J, Dai H. Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology Nano Letters. 4: 123-127. DOI: 10.1021/Nl0349707  0.591
2003 Chang L, Choi YK, Kedzierski J, Lindert N, Xuan P, Bokor J, Hu C, King TJ. Moore's law lives on Ieee Circuits and Devices Magazine. 19: 35-42. DOI: 10.1109/Mcd.2003.1175106  0.581
2003 Xuan P, Bokor J. Investigation of NiSi and TiSi as CMOS Gate Materials Ieee Electron Device Letters. 24: 634-636. DOI: 10.1109/Led.2003.817371  0.568
2002 Yeo YC, Subramanian V, Kedzierski J, Xuan P, King TJ, Bokor J, Hu C. Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel Ieee Transactions On Electron Devices. 49: 279-286. DOI: 10.1109/16.981218  0.572
2000 Yeo YC, Subramanian V, Kedzierski J, Xuan P, King TJ, Bokor J, Hu C. Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel Ieee Electron Device Letters. 21: 161-163. DOI: 10.1109/55.830968  0.553
2000 Kedzierski J, Xuan P, Subramanian V, Bokor J, King TJ, Hu C, Anderson E. 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain Superlattices and Microstructures. 28: 445-452. DOI: 10.1006/Spmi.2000.0947  0.599
2000 Kedzierski J, Xuan P, Anderson EH, Bokor J, King TJ, Hu C. Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime Technical Digest - International Electron Devices Meeting. 57-59.  0.332
2000 Tang SH, Xuan P, Bokor J, Hu C. Comparison of short-channel effect and offstate leakage in symmetric vs. asymmetric double gate MOSFETs Ieee International Soi Conference. 120-121.  0.363
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