Daniel Recht, Ph.D. - Publications

Affiliations: 
Engineering and Applied Sciences Harvard University, Cambridge, MA, United States 
Area:
Materials and Energy Technologies

28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Akey AJ, Recht D, Williams JS, Aziz MJ, Buonassisi T. Single-Phase Filamentary Cellular Breakdown Via Laser-Induced Solute Segregation Advanced Functional Materials. 25: 4642-4649. DOI: 10.1002/adfm.201501450  0.52
2014 Mailoa JP, Akey AJ, Simmons CB, Hutchinson D, Mathews J, Sullivan JT, Recht D, Winkler MT, Williams JS, Warrender JM, Persans PD, Aziz MJ, Buonassisi T. Room-temperature sub-band gap optoelectronic response of hyperdoped silicon. Nature Communications. 5: 3011. PMID 24385050 DOI: 10.1038/ncomms4011  0.52
2014 Mailoa JP, Akey AJ, Simmons CB, Hutchinson D, Mathews J, Sullivan JT, Recht D, Winkler MT, Williams JS, Warrender JM, Persans PD, Aziz MJ, Buonassisi T. Hyperdoped silicon sub-band gap photoresponse for an intermediate band solar cell in silicon 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 1073-1076. DOI: 10.1109/PVSC.2014.6925099  0.52
2014 Sher MJ, Simmons CB, Krich JJ, Akey AJ, Winkler MT, Recht D, Buonassisi T, Aziz MJ, Lindenberg AM. Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon Applied Physics Letters. 105. DOI: 10.1063/1.4892357  0.52
2014 Warrender JM, Mathews J, Recht D, Smith M, Gradečak S, Aziz MJ. Morphological stability during solidification of silicon incorporating metallic impurities Journal of Applied Physics. 115. DOI: 10.1063/1.4871809  0.52
2014 Mathews J, Akey AJ, Recht D, Malladi G, Efstathiadis H, Aziz MJ, Warrender JM. On the limits to Ti incorporation into Si using pulsed laser melting Applied Physics Letters. 104. DOI: 10.1063/1.4868724  0.52
2014 Simmons CB, Akey AJ, Mailoa JP, Recht D, Aziz MJ, Buonassisi T. Enhancing the infrared photoresponse of silicon by controlling the fermi level location within an impurity band Advanced Functional Materials. 24: 2852-2858. DOI: 10.1002/adfm.201303820  0.52
2013 Lu C, Recht D, Arnold C. Generalized model for photoinduced surface structure in amorphous thin films. Physical Review Letters. 111: 105503. PMID 25166680 DOI: 10.1103/PhysRevLett.111.105503  0.52
2013 Simmons CB, Akey AJ, Krich JJ, Sullivan JT, Recht D, Aziz MJ, Buonassisi T. Deactivation of metastable single-crystal silicon hyperdoped with sulfur Journal of Applied Physics. 114. DOI: 10.1063/1.4854835  0.52
2013 Recht D, Smith MJ, Charnvanichborikarn S, Sullivan JT, Winkler MT, Mathews J, Warrender JM, Buonassisi T, Williams JS, Gradečak S, Aziz MJ. Supersaturating silicon with transition metals by ion implantation and pulsed laser melting Journal of Applied Physics. 114. DOI: 10.1063/1.4821240  0.52
2013 Sullivan JT, Simmons CB, Krich JJ, Akey AJ, Recht D, Aziz MJ, Buonassisi T. Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon Journal of Applied Physics. 114. DOI: 10.1063/1.4820454  0.52
2013 Fabbri F, Smith MJ, Recht D, Aziz MJ, Gradečak S, Salviati G. Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur Applied Physics Letters. 102. DOI: 10.1063/1.4788743  0.52
2013 Jensen KE, Pennachio D, Recht D, Weitz DA, Spaepen F. Rapid growth of large, defect-free colloidal crystals Soft Matter. 9: 320-328. DOI: 10.1039/c2sm26792f  0.52
2012 Ertekin E, Winkler MT, Recht D, Said AJ, Aziz MJ, Buonassisi T, Grossman JC. Insulator-to-metal transition in selenium-hyperdoped silicon: observation and origin. Physical Review Letters. 108: 026401. PMID 22324699 DOI: 10.1103/PhysRevLett.108.026401  0.52
2012 Persans PD, Berry NE, Recht D, Hutchinson D, Said AJ, Warrender JM, Peterson H, DiFranzo A, McGahan C, Clark J, Cunningham W, Aziz MJ. Photocarrier excitation and transport in hyperdoped planar silicon devices Materials Research Society Symposium Proceedings. 1321: 291-296. DOI: 10.1557/opl.2011.1150  0.52
2012 Recht D, Hutchinson D, Cruson T, DiFranzo A, McAllister A, Said AJ, Warrender JM, Persans PD, Aziz MJ. Contactless microwave measurements of photoconductivity in silicon hyperdoped with chalcogens Applied Physics Express. 5. DOI: 10.1143/APEX.5.041301  0.52
2012 Persans PD, Berry NE, Recht D, Hutchinson D, Peterson H, Clark J, Charnvanichborikarn S, Williams JS, Difranzo A, Aziz MJ, Warrender JM. Photocarrier lifetime and transport in silicon supersaturated with sulfur Applied Physics Letters. 101. DOI: 10.1063/1.4746752  0.52
2012 Recht D, Sullivan JT, Reedy R, Buonassisi T, Aziz MJ. Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting Applied Physics Letters. 100. DOI: 10.1063/1.3695171  0.52
2011 Winkler MT, Recht D, Sher MJ, Said AJ, Mazur E, Aziz MJ. Insulator-to-metal transition in sulfur-doped silicon. Physical Review Letters. 106: 178701. PMID 21635068 DOI: 10.1103/PhysRevLett.106.178701  0.52
2011 Sullivan JT, Wilks RG, Winkler MT, Weinhardt L, Recht D, Said AJ, Newman BK, Zhang Y, Blum M, Krause S, Yang WL, Heske C, Aziz MJ, Br M, Buonassisi T. Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur Applied Physics Letters. 99. DOI: 10.1063/1.3643050  0.52
2011 Said AJ, Recht D, Sullivan JT, Warrender JM, Buonassisi T, Persans PD, Aziz MJ. Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes Applied Physics Letters. 99. DOI: 10.1063/1.3609871  0.52
2011 Dolph MC, Kim T, Yin W, Recht D, Fan W, Yu J, Aziz MJ, Lu J, Wolf SA. Magnetic properties of ion implanted Ge1-xMnx thin films solidified through pulsed laser melting Journal of Applied Physics. 109. DOI: 10.1063/1.3590137  0.52
2011 Pan SH, Recht D, Charnvanichborikarn S, Williams JS, Aziz MJ. Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens Applied Physics Letters. 98. DOI: 10.1063/1.3567759  0.52
2011 Hartman K, Johnson JL, Bertoni MI, Recht D, Aziz MJ, Scarpulla MA, Buonassisi T. SnS thin-films by RF sputtering at room temperature Thin Solid Films. 519: 7421-7424. DOI: 10.1016/j.tsf.2010.12.186  0.52
2011 Recht D. The average thickness of a growing thin film undergoing a phase change Scripta Materialia. 64: 300-302. DOI: 10.1016/j.scriptamat.2010.08.041  0.52
2009 Recht D, Capasso F, Aziz MJ. On the temperature dependence of point-defect-mediated luminescence in silicon Applied Physics Letters. 94. DOI: 10.1063/1.3157277  0.52
2007 Recht D, Nan Y. Ion beam implantation of surface layers Focused Ion Beam Systems: Basics and Applications. 318-336. DOI: 10.1017/CBO9780511600302.013  0.52
2005 Recht DL, Liu Z, Rahman KR, Gmachl CF, Arnold CB. Quantum cascade lasers tuned by amorphous As2S3 claddings Proceedings of Spie - the International Society For Optical Engineering. 5713: 293-300. DOI: 10.1117/12.599080  0.52
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