Krishna C. Saraswat - Publications

Affiliations: 
Electrical Engineering Stanford University, Palo Alto, CA 

95 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Kim SG, Kim SH, Park J, Kim GS, Park JH, Saraswat KC, Kim J, Yu HY. Infrared Detectable MoS Phototransistor and Its Application to Artificial Multi-Level Optic-Neural Synapse. Acs Nano. PMID 31469532 DOI: 10.1021/acsnano.9b03683  0.72
2017 Xue M, Islam R, Meng AC, Lyu Z, Lu CY, Tae C, Braun MR, Zang K, McIntyre PC, Kamins TI, Saraswat KC, Harris JS. Contact Selectivity Engineering in 2 μm Thick Ultrathin c-Si Solar Cell using Transition Metal Oxides Achieving Efficiency of 10.8. Acs Applied Materials & Interfaces. PMID 29124928 DOI: 10.1021/acsami.7b12886  0.68
2017 El Atab N, Ulusoy Ghobadi G, Ghobadi A, Suh J, Islam R, Okyay AK, Saraswat KC, Nayfeh A. Cubic-phase zirconia nano-islands growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices. Nanotechnology. PMID 28832335 DOI: 10.1088/1361-6528/aa87e5  0.68
2017 Islam R, Chen G, Ramesh P, Suh J, Fuchigami N, Lee D, Littau KA, Weiner K, Collins RT, Saraswat KC. Investigation of the Changes in Electronic Properties of Nickel Oxide (NiOx) due to UV/Ozone Treatment. Acs Applied Materials & Interfaces. PMID 28447776 DOI: 10.1021/acsami.7b01629  0.64
2016 Petykiewicz J, Nam D, Sukhdeo DS, Gupta S, Buckley SM, Piggott AY, Vuckovic J, Saraswat KC. Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High-Q Nanophotonic Cavities. Nano Letters. PMID 26907359 DOI: 10.1021/acs.nanolett.5b03976  0.76
2015 Sukhdeo DS, Petykiewicz J, Gupta S, Kim D, Woo S, Kim Y, Vučković J, Saraswat KC, Nam D. Ge microdisk with lithographically-tunable strain using CMOS-compatible process. Optics Express. 23: 33249-54. PMID 26831991  0.76
2015 Nam JH, Afshinmanesh F, Nam D, Jung WS, Kamins TI, Brongersma ML, Saraswat KC. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon. Optics Express. 23: 15816-23. PMID 26193560  0.72
2015 Sukhdeo DS, Nam D, Kang JH, Brongersma ML, Saraswat KC. Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics. Optics Express. 23: 16740-9. PMID 26191686 DOI: 10.1364/OE.23.016740  0.76
2015 Shang CK, Chen R, Gupta S, Huang YC, Huo Y, Sanchez E, Kim Y, Kamins TI, Saraswat KC, Harris JS. Strained germanium-tin multiple quantum well microdisk resonators towards a light source on silicon Proceedings of Spie - the International Society For Optical Engineering. 9367. DOI: 10.1117/12.2080146  0.76
2015 Kim GS, Kim SH, Kim JK, Shin C, Park JH, Saraswat KC, Cho BJ, Yu HY. Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET Ieee Electron Device Letters. 36: 745-747. DOI: 10.1109/LED.2015.2440434  0.76
2014 Nam D, Kang JH, Brongersma ML, Saraswat KC. Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence. Optics Letters. 39: 6205-8. PMID 25361315 DOI: 10.1364/OL.39.006205  0.76
2014 Chen R, Gupta S, Huang YC, Huo Y, Rudy CW, Sanchez E, Kim Y, Kamins TI, Saraswat KC, Harris JS. Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics. Nano Letters. 14: 37-43. PMID 24299070 DOI: 10.1021/nl402815v  0.36
2014 Gupta S, Gong X, Zhang R, Yeo YC, Takagi S, Saraswat KC. New materials for post-Si computing: Ge and GeSn devices Mrs Bulletin. 39: 678-686. DOI: 10.1557/mrs.2014.163  0.36
2014 Sukhdeo DS, Nam D, Kang JH, Brongersma ML, Saraswat KC. Direct bandgap germanium-on-silicon inferred from 5.7% (100) uniaxial tensile strain 〈Invited〉 Photonics Research. 2: A8-A13. DOI: 10.1364/PRJ.2.0000A8  0.76
2014 Nam D, Sukhdeo DS, Dutt BR, Saraswat KC. Light emission from highly-strained germanium for on-chip optical interconnects Ecs Transactions. 64: 371-381. DOI: 10.1149/06406.0371ecst  0.76
2014 Gupta S, Moroz V, Lee S, Lu Q, Saraswat KC. 7-nm FinFET CMOS design enabled by stress engineering using Si, Ge, and Sn Ieee Transactions On Electron Devices. 61: 1222-1230. DOI: 10.1109/TED.2014.2311129  0.76
2014 Shine G, Manipatruni S, Chaudhry A, Saraswat KC, Nikonov DE, Young IA. Extended Hückel theory for quantum transport in magnetic tunnel junctions International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 301-304. DOI: 10.1109/SISPAD.2014.6931623  0.76
2014 Islam R, Saraswat KC. Metal/insulator/semiconductor carrier selective contacts for photovoltaic cells 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 285-289. DOI: 10.1109/PVSC.2014.6924915  0.76
2014 Kim JK, Kim GS, Nam H, Shin C, Park JH, Cho BJ, Saraswat KC, Yu HY. The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances Ieee Electron Device Letters. 35: 1185-1187. DOI: 10.1109/LED.2014.2364574  0.72
2014 Kim GS, Kim JK, Kim SH, Jo J, Shin C, Park JH, Saraswat KC, Yu HY. Specific contact resistivity reduction through Ar plasma-treated TiO2-x interfacial layer to metal/Ge contact Ieee Electron Device Letters. 35: 1076-1078. DOI: 10.1109/LED.2014.2354679  0.72
2014 Kim JK, Kim GS, Shin C, Park JH, Saraswat KC, Yu HY. Analytical study of interfacial layer doping effect on contact resistivity in metal-interfacial layer-Ge structure Ieee Electron Device Letters. 35: 705-707. DOI: 10.1109/LED.2014.2323256  0.72
2014 English CD, Shine G, Dorgan VE, Saraswat KC, Pop E. Improving contact resistance in MoS2 field effect transistors Device Research Conference - Conference Digest, Drc. 193-194. DOI: 10.1109/DRC.2014.6872363  0.76
2014 Islam R, Shine G, Saraswat KC. Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts Applied Physics Letters. 105. DOI: 10.1063/1.4901193  0.64
2014 Sukhdeo DS, Nam D, Kang JH, Petykiewicz J, Lee JH, Jung WS, Vučković J, Brongersma ML, Saraswat KC. Mimicking heterostructure behavior within a single material at room temperature using strain Optics Infobase Conference Papers 0.76
2013 Gupta S, Chen R, Huang YC, Kim Y, Sanchez E, Harris JS, Saraswat KC. Highly selective dry etching of germanium over germanium-tin (Ge(1-x)Sn(x)): a novel route for Ge(1-x)Sn(x) nanostructure fabrication. Nano Letters. 13: 3783-90. PMID 23834495 DOI: 10.1021/nl4017286  0.36
2013 Nam D, Sukhdeo DS, Kang JH, Petykiewicz J, Lee JH, Jung WS, Vučković J, Brongersma ML, Saraswat KC. Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles. Nano Letters. 13: 3118-23. PMID 23758608 DOI: 10.1021/nl401042n  0.76
2013 Pal A, Nainani A, Ye Z, Bao X, Sanchez E, Saraswat KC. Electrical characterization of GaP-silicon interface for memory and transistor applications Ieee Transactions On Electron Devices. 60: 2238-2245. DOI: 10.1109/TED.2013.2264495  0.48
2013 Pal A, Nainani A, Saraswat KC. Addressing key challenges in 1T-DRAM: Retention time, scaling and variability - Using a novel design with GaP source-drain International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 376-379. DOI: 10.1109/SISPAD.2013.6650653  0.48
2013 Pal A, Nainani A, Ye Z, Bao X, Sanchez E, Saraswat KC. GaP source-drain SOI 1T-DRAM: Solving the key technological challenges 2013 Ieee Soi-3d-Subthreshold Microelectronics Technology Unified Conference, S3s 2013. DOI: 10.1109/S3S.2013.6716573  0.48
2013 Nam JH, Jung WS, Shim J, Ito T, Nishi Y, Park JH, Saraswat KC. Germanium on insulator (GOI) structure locally grown on silicon using hetero epitaxial lateral overgrowth 2013 Ieee Soi-3d-Subthreshold Microelectronics Technology Unified Conference, S3s 2013. DOI: 10.1109/S3S.2013.6716571  0.72
2013 Sukhdeo DS, Lin H, Nam D, Yuan Z, Vulovic BM, Gupta S, Harris JS, Dutt B, Saraswat KC. Approaches for a viable Germanium laser: Tensile strain, GeSn alloys, and n-type doping 2013 Optical Interconnects Conference, Oi 2013. 112-113. DOI: 10.1109/OIC.2013.6552949  0.76
2013 Yuan Z, Kumar A, Chen CY, Nainani A, Bennett BR, Boos JB, Saraswat KC. Antimonide-based heterostructure p-channel MOSFETs with Ni-alloy source/drain Ieee Electron Device Letters. 34: 1367-1369. DOI: 10.1109/LED.2013.2280615  0.76
2013 Gupta S, Huang YC, Kim Y, Sanchez E, Saraswat KC. Hole mobility enhancement in compressively strained Ge0.93 Sn0.07 pMOSFETs Ieee Electron Device Letters. 34: 831-833. DOI: 10.1109/LED.2013.2259573  0.36
2013 Shim J, Song I, Jung WS, Nam J, Leem JW, Yu JS, Kim DE, Cho WJ, Kim YS, Jun DH, Heo J, Park W, Park JH, Saraswat KC. Effects of thermal annealing on in situ phosphorus-doped germanium n +p junction Ieee Electron Device Letters. 34: 15-17. DOI: 10.1109/LED.2012.2226016  0.72
2013 Dutt B, Lin H, Sukhdeo DS, Vulovic BM, Gupta S, Nam D, Saraswat KC, Harris JS. Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/JSTQE.2013.2241397  0.76
2013 Pal A, Saraswat KC, Nainani A, Ye Z, Bao X, Sanchez E. GaP source-drain vertical transistor on bulk silicon for 1-transistor DRAM application 2013 5th Ieee International Memory Workshop, Imw 2013. 192-195. DOI: 10.1109/IMW.2013.6582132  0.48
2013 Gupta S, Moroz V, Smith L, Lu Q, Saraswat KC. A group IV solution for 7 nm FinFET CMOS: Stress engineering using Si, Ge and Sn Technical Digest - International Electron Devices Meeting, Iedm. 26.3.1-26.3.4. DOI: 10.1109/IEDM.2013.6724696  0.76
2013 Sukhdeo DS, Nam D, Kang JH, Petykiewicz J, Lee JH, Jung WS, Vučković J, Brongersma ML, Saraswat KC. Direct bandgap germanium nanowires inferred from 5.0% uniaxial tensile strain Ieee International Conference On Group Iv Photonics Gfp. 73-74. DOI: 10.1109/Group4.2013.6644432  0.76
2013 Yuan Z, Chen CY, Kumar A, Nainani A, Bennett BR, Boos JB, Saraswat KC. Effects of oxidant dosing on GaSb (100) prior to atomic layer deposition and high-performance antimonide-based P-channel MOSFETs with Ni-alloy S/D Device Research Conference - Conference Digest, Drc. 25-26. DOI: 10.1109/DRC.2013.6633777  0.76
2013 Gupta S, Chen R, Harris JS, Saraswat KC. Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment Applied Physics Letters. 103. DOI: 10.1063/1.4850518  0.36
2013 Gupta S, Magyari-Köpe B, Nishi Y, Saraswat KC. Achieving direct band gap in germanium through integration of Sn alloying and external strain Journal of Applied Physics. 113. DOI: 10.1063/1.4792649  0.44
2013 Chen R, Huang YC, Gupta S, Lin AC, Sanchez E, Kim Y, Saraswat KC, Kamins TI, Harris JS. Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing Journal of Crystal Growth. 365: 29-34. DOI: 10.1016/j.jcrysgro.2012.12.014  0.36
2013 Yu HY, Battal E, Okyay AK, Shim J, Park JH, Baek JW, Saraswat KC. Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers Current Applied Physics. 13: 1060-1063. DOI: 10.1016/j.cap.2013.02.021  0.76
2013 Sukhdeo DS, Nam D, Yuan Z, Dutt BR, Saraswat KC. Toward an efficient germanium-on-silicon laser: Ultimate limits of tensile strain and n-type doping Cleo: Science and Innovations, Cleo_si 2013. JTh2A.109.  0.44
2013 Yuan Z, Kumar A, Chen CY, Nainani A, Griffin P, Wang A, Wang W, Wong MH, Droopad R, Contreras-Guerrero R, Kirsch P, Jammy R, Plummer J, Saraswat KC. Optimal device architecture and hetero-integration scheme for III-V CMOS Digest of Technical Papers - Symposium On Vlsi Technology. T54-T55.  0.48
2012 Nam JH, Fuse T, Nishi Y, Saraswat KC. Germanium on insulator (GOI) structure using hetero-epitaxial lateral overgrowth on silicon Ecs Transactions. 45: 203-208. DOI: 10.1149/1.3700469  0.44
2012 Nainani A, Yuan Z, Kumar A, Bennett BR, Boos JB, Saraswat KC. III-Sb MOSFETs: Opportunities and challenges Ecs Transactions. 45: 91-96. DOI: 10.1149/1.3700457  0.76
2012 Gupta S, Chen R, Vincent B, Lin D, Magyari-Köpe B, Caymax M, Dekoster J, Harris JS, Nishi Y, Saraswat KC. GeSn channel n and p MOSFETs Ecs Transactions. 50: 937-941. DOI: 10.1149/05009.0937ecst  0.76
2012 Yuan Z, Nainani A, Kumar A, Guan X, Bennett BR, Boos JB, Ancona MG, Saraswat KC. InGaSb: Single channel solution for realizing III-V CMOS Digest of Technical Papers - Symposium On Vlsi Technology. 185-186. DOI: 10.1109/VLSIT.2012.6242523  0.76
2012 Gupta S, Vincent B, Lin DHC, Gunji M, Firrincieli A, Gencarelli F, Magyari-Köpe B, Yang B, Douhard B, Delmotte J, Franquet A, Caymax M, Dekoster J, Nishi Y, Saraswat KC. GeSn channel nMOSFETs: Material potential and technological outlook Digest of Technical Papers - Symposium On Vlsi Technology. 95-96. DOI: 10.1109/VLSIT.2012.6242478  0.76
2012 Jung WS, Park JH, Lin JYJ, Wong S, Saraswat KC. Characterization of geometric leakage current of GeO2 isolation and effect of forming gas annealing in germanium p-n junctions Ieee Electron Device Letters. 33: 1520-1522. DOI: 10.1109/LED.2012.2211856  0.72
2012 Yu HY, Park JH, Okyay AK, Saraswat KC. Selective-area high-quality germanium growth for monolithic integrated optoelectronics Ieee Electron Device Letters. 33: 579-581. DOI: 10.1109/LED.2011.2181814  0.76
2012 Pal A, Nainani A, Gupta S, Saraswat KC. Performance improvement of one-transistor DRAM by band engineering Ieee Electron Device Letters. 33: 29-31. DOI: 10.1109/LED.2011.2171912  0.48
2012 Dutt B, Sukhdeo DS, Nam D, Vulovic BM, Yuan Z, Saraswat KC. Roadmap to an efficient germanium-on-silicon laser: Strain vs. n-type doping Ieee Photonics Journal. 4: 2002-2009. DOI: 10.1109/JPHOT.2012.2221692  0.76
2012 Lin JYJ, Roy AM, Sun Y, Saraswat KC. Metal-insulator-semiconductor contacts on Ge: Physics and applications 2012 International Silicon-Germanium Technology and Device Meeting, Istdm 2012 - Proceedings. 92-93. DOI: 10.1109/ISTDM.2012.6222473  0.48
2012 Jung WS, Nam JH, Lin JYJ, Ryu S, Nainani A, Saraswat KC. Enhancement of phosphorus dopant activation and diffusion suppression by fluorine co-implant in epitaxially grown germanium 2012 International Silicon-Germanium Technology and Device Meeting, Istdm 2012 - Proceedings. 18-19. DOI: 10.1109/ISTDM.2012.6222434  0.72
2012 Lin D, Alian A, Gupta S, Yang B, Bury E, Sioncke S, Degraeve R, Toledano ML, Krom R, Favia P, Bender H, Caymax M, Saraswat KC, Collaert N, Thean A. Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. 28.3.1-28.3.4. DOI: 10.1109/IEDM.2012.6479121  0.36
2012 Gupta S, Vincent B, Yang B, Lin D, Gencarelli F, Lin JYJ, Chen R, Richard O, Bender H, Magyari-Kope B, Caymax M, Dekoster J, Nishi Y, Saraswat KC. Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method Technical Digest - International Electron Devices Meeting, Iedm. 16.2.1-16.2.4. DOI: 10.1109/IEDM.2012.6479052  0.76
2012 Jung WS, Park JH, Jung HW, Saraswat KC. Characteristics of metal-induced crystallization/dopant activation and its application to junction diodes on single-crystalline silicon Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/24/245104  0.76
2012 Giubertoni D, Demenev E, Gupta S, Jestin Y, Meirer F, Gennaro S, Iacob E, Pepponi G, Pucker G, Gwilliam RM, Jeynes C, Colaux JL, Saraswat KC, Bersani M. Solid phase epitaxial re-growth of Sn ion implanted germanium thin films Aip Conference Proceedings. 1496: 103-106. DOI: 10.1063/1.4766500  0.36
2012 Jung WS, Park JH, Nainani A, Nam D, Saraswat KC. Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application Applied Physics Letters. 101. DOI: 10.1063/1.4746389  0.72
2012 Nainani A, Bennett BR, Brad Boos J, Ancona MG, Saraswat KC. Enhancing hole mobility in III-V semiconductors Journal of Applied Physics. 111. DOI: 10.1063/1.4718381  0.76
2012 Yuan Z, Nainani A, Bennett BR, Brad Boos J, Ancona MG, Saraswat KC. Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 100. DOI: 10.1063/1.3699226  0.76
2011 Nainani A, Irisawa T, Yuan Z, Bennett BR, Boos JB, Nishi Y, Saraswat KC. Optimization of the Al2O3/GaSb interface and a high-mobility GaSb pMOSFET Ieee Transactions On Electron Devices. 58: 3407-3415. DOI: 10.1109/TED.2011.2162732  0.76
2011 Park JH, Kuzum D, Yu HY, Saraswat KC. Optimization of germanium (Ge) n+/p and p+/n junction diodes and sub 380 °c Ge CMOS technology for monolithic three-dimensional integration Ieee Transactions On Electron Devices. 58: 2394-2400. DOI: 10.1109/TED.2011.2148199  0.72
2011 Kuzum D, Park JH, Krishnamohan T, Wong HSP, Saraswat KC. The effect of donor/acceptor nature of interface traps on Ge MOSFET characteristics Ieee Transactions On Electron Devices. 58: 1015-1022. DOI: 10.1109/TED.2011.2120613  0.76
2011 Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta PA, Wong HSP, Saraswat KC. High-mobility Ge N-MOSFETs and mobility degradation mechanisms Ieee Transactions On Electron Devices. 58: 59-66. DOI: 10.1109/TED.2010.2088124  0.76
2011 Guan X, Kim D, Saraswat KC, Wong HSP. Analytical approximation of complex band structures for band-to-band tunneling models International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 267-270. DOI: 10.1109/SISPAD.2011.6035076  0.76
2011 Yuan Z, Nainani A, Guan X, Wong HSP, Saraswat KC. Tight-binding study of Γ-L bandstructure engineering for ballistic III-V nMOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 71-74. DOI: 10.1109/SISPAD.2011.6035052  0.56
2011 Guan X, Kim D, Saraswat KC, Wong HSP. Complex band structures: From parabolic to elliptic approximation Ieee Electron Device Letters. 32: 1296-1298. DOI: 10.1109/LED.2011.2160143  0.76
2011 Yu HY, Kobayashi M, Park JH, Nishi Y, Saraswat KC. Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration Ieee Electron Device Letters. 32: 446-448. DOI: 10.1109/LED.2011.2106756  0.72
2011 Park JH, Kuzum D, Jung WS, Saraswat KC. N-channel germanium MOSFET fabricated below 360°C by cobalt-induced dopant activation for monolithic three-dimensional-ICs Ieee Electron Device Letters. 32: 234-236. DOI: 10.1109/LED.2010.2095827  0.72
2011 Yuan Z, Nainani A, Bennett BR, Boos JB, Ancona MG, Saraswat KC. Heterostructure design and demonstration of InGaSb channel III-V CMOS transistors 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135272  0.76
2011 Gupta S, Chen R, Magyari-Kope B, Lin H, Yang B, Nainani A, Nishi Y, Harris JS, Saraswat KC. GeSn technology: Extending the Ge electronics roadmap Technical Digest - International Electron Devices Meeting, Iedm. 16.6.1-16.6.4. DOI: 10.1109/IEDM.2011.6131568  0.48
2011 Yuan Z, Nainani A, Lin JY, Bennett BR, Boos JB, Ancona MG, Saraswat KC. Fermi-level pinning at metal/antimonides interface and demonstration of antimonides-based metal S/D Schottky pMOSFETs Device Research Conference - Conference Digest, Drc. 143-144. DOI: 10.1109/DRC.2011.5994457  0.76
2011 Hu J, Nainani A, Sun Y, Saraswat KC, Philip Wong HS. Impact of fixed charge on metal-insulator-semiconductor barrier height reduction Applied Physics Letters. 99. DOI: 10.1063/1.3669414  0.56
2011 Hu J, Saraswat KC, Philip Wong HS. Metal/III-V effective barrier height tuning using atomic layer deposition of high-κ/high-κ bilayer interfaces Applied Physics Letters. 99. DOI: 10.1063/1.3633118  0.56
2011 Nainani A, Yuan Z, Krishnamohan T, Bennett BR, Boos JB, Reason M, Ancona MG, Nishi Y, Saraswat KC. InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design Journal of Applied Physics. 110. DOI: 10.1063/1.3600220  0.76
2011 Nainani A, Sun Y, Irisawa T, Yuan Z, Kobayashi M, Pianetta P, Bennett BR, Brad Boos J, Saraswat KC. Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning Journal of Applied Physics. 109. DOI: 10.1063/1.3590167  0.76
2011 Yuan Z, Nainani A, Sun Y, Lin JYJ, Pianetta P, Saraswat KC. Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance Applied Physics Letters. 98. DOI: 10.1063/1.3584862  0.76
2011 Lin JYJ, Roy AM, Nainani A, Sun Y, Saraswat KC. Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height Applied Physics Letters. 98. DOI: 10.1063/1.3562305  0.48
2011 Hu J, Saraswat KC, Wong HSP. Experimental demonstration of In0.53 Ga0.47 As field effect transistors with scalable nonalloyed source/drain contacts Applied Physics Letters. 98. DOI: 10.1063/1.3553192  0.56
2011 Kim EJ, Shandalov M, Saraswat KC, McIntyre PC. Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics Applied Physics Letters. 98. DOI: 10.1063/1.3527977  0.68
2011 Nainani A, Irisawa T, Bennett BR, Brad Boos J, Ancona MG, Saraswat KC. Study of Shubnikov-de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1-XSb quantum wells Solid-State Electronics. 62: 138-141. DOI: 10.1016/j.sse.2011.04.005  0.76
2011 Kuzum D, Park JH, Krishnamohan T, Saraswat KC. Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics Microelectronic Engineering. 88: 3428-3431. DOI: 10.1016/j.mee.2010.04.011  0.76
2011 Koo KH, Saraswat KC. Study of performances of low-k Cu, CNTs, and optical interconnects Nanoelectronic Circuit Design. 377-407. DOI: 10.1007/978-1-4419-7609-3_11  0.6
2011 Nam D, Roy AM, Huang KCY, Brongersma ML, Saraswat KC. Strained germanium membrane using thin film stressor for high efficiency laser Optics Infobase Conference Papers 0.76
2011 Na Y, Ly-Gagnon D, Miller DAB, Saraswat KC. A novel optoelectronic device complimentary to photodetector Optics Infobase Conference Papers 0.6
2011 Nam D, Roy AM, Huang KCY, Brongersma ML, Saraswat KC. Strained germanium membrane using thin film stressor for high efficiency laser Optics Infobase Conference Papers 0.76
2010 Jung WS, Park JH, Kuzum D, Kim W, Wong S, Saraswat KC. Leakage current analysis of lateral p+/n Ge based diode activated at low temperature for three-dimensional integrated circuit (3D-ICs) Ecs Transactions. 33: 35-39. DOI: 10.1149/1.3501032  0.72
2010 Nainani A, Irisawa T, Yuan Z, Sun Y, Krishnamohan T, Reason M, Bennett BR, Boos JB, Ancona MG, Nishi Y, Saraswat KC. Development of high-k dielectric for antimonides and a sub 350°C III-V pMOSFET outperforming Germanium Technical Digest - International Electron Devices Meeting, Iedm. 6.4.1-6.4.4. DOI: 10.1109/IEDM.2010.5703309  0.76
2010 Krishnamohan T, Kim D, Saraswat KC. Properties and trade-offs of compound semiconductor MOSFETs Fundamentals of Iii-V Semiconductor Mosfets. 7-30. DOI: 10.1007/978-1-4419-1547-4_2  0.76
2007 Okyay AK, Pethe AJ, Kuzum D, Latif S, Miller DA, Saraswat KC. SiGe optoelectronic metal-oxide semiconductor field-effect transistor. Optics Letters. 32: 2022-4. PMID 17632630 DOI: 10.1364/OL.32.002022  0.76
2006 Okyay AK, Nayfeh AM, Saraswat KC, Yonehara T, Marshall A, McIntyre PC. High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si. Optics Letters. 31: 2565-7. PMID 16902620 DOI: 10.1364/OL.31.002565  0.76
2006 Tang L, Miller DA, Okyay AK, Matteo JA, Yuen Y, Saraswat KC, Hesselink L. C-shaped nanoaperture-enhanced germanium photodetector. Optics Letters. 31: 1519-21. PMID 16642158 DOI: 10.1364/OL.31.001519  0.76
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