Kyoung H. Kim, Ph.D. - Publications
Affiliations: | 2007 | Harvard University, Cambridge, MA, United States |
Area:
applied mathematics, quantum mechanics, spectroscopy, intermolecular forces, solid state and materials scienceYear | Citation | Score | |||
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2008 | Leu PW, Adhikari H, Koto M, Kim KH, Rouffignac Pd, Marshall AF, Gordon RG, Chidsey CE, McIntyre PC. Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties. Nanotechnology. 19: 485705. PMID 21836312 DOI: 10.1088/0957-4484/19/48/485705 | 0.445 | |||
2007 | Kim KH, Gordon RG, Ritenour A, Antoniadis DA. Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks Applied Physics Letters. 90: 212104. DOI: 10.1063/1.2741609 | 0.539 | |||
2006 | De Rouffignac P, Yousef AP, Kim KH, Gordon RG. ALD of scandium oxide from scandium tris (N, N′ - diisopropylacetamidinate) and water Electrochemical and Solid-State Letters. 9: F45-F48. DOI: 10.1149/1.2191131 | 0.586 | |||
2006 | Kim KH, Farmer DB, Lehn JSM, Venkateswara Rao P, Gordon RG. Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current Applied Physics Letters. 89. DOI: 10.1063/1.2354423 | 0.641 | |||
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