Damon B. Farmer, Ph.D. - Publications

2007 Harvard University, Cambridge, MA, United States 
applied mathematics, quantum mechanics, spectroscopy, intermolecular forces, solid state and materials science

61 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Ho PH, Farmer DB, Tulevski GS, Han SJ, Bishop DM, Gignac LM, Bucchignano J, Avouris P, Falk AL. Intrinsically ultrastrong plasmon-exciton interactions in crystallized films of carbon nanotubes. Proceedings of the National Academy of Sciences of the United States of America. PMID 30459274 DOI: 10.1073/pnas.1816251115  0.36
2018 Engel M, Farmer DB, Azpiroz JT, Seo JT, Kang J, Avouris P, Hersam MC, Krupke R, Steiner M. Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration. Nature Communications. 9: 4095. PMID 30291247 DOI: 10.1038/s41467-018-06604-4  0.36
2018 Demuru S, Nela L, Marchack N, Holmes SJ, Farmer DB, Tulevski GS, Lin Q, Deligianni H. Scalable Nanostructured Carbon Electrode Arrays for Enhanced Dopamine Detection. Acs Sensors. PMID 29480715 DOI: 10.1021/acssensors.8b00043  0.36
2017 Chiu KC, Falk AL, Ho PH, Farmer DB, Tulevski GS, Lee YH, Avouris P, Han SJ. Strong and broadly tunable plasmon resonances in thick films of aligned carbon nanotubes. Nano Letters. PMID 28763225 DOI: 10.1021/acs.nanolett.7b02522  0.36
2017 Falk AL, Chiu KC, Farmer DB, Cao Q, Tersoff J, Lee YH, Avouris P, Han SJ. Coherent Plasmon and Phonon-Plasmon Resonances in Carbon Nanotubes. Physical Review Letters. 118: 257401. PMID 28696746 DOI: 10.1103/PhysRevLett.118.257401  0.36
2016 Guo Q, Pospischil A, Bhuiyan M, Jiang H, Tian H, Farmer DB, Deng B, Li C, Han SJ, Wang H, Xia Q, Ma TP, Mueller T, Xia F. Black Phosphorus Mid-Infrared Photodetectors with High Gain. Nano Letters. PMID 27332146 DOI: 10.1021/acs.nanolett.6b01977  0.76
2016 Li L, Engel M, Farmer DB, Han SJ, Wong HP. High Performance P-type Black Phosphorus Transistor with Scandium Contact. Acs Nano. PMID 27023751 DOI: 10.1021/acsnano.6b01008  0.76
2016 Jagtiani AV, Miyazoe H, Chang J, Farmer DB, Engel M, Neumayer D, Han SJ, Engelmann SU, Boris DR, Hernández SC, Lock EH, Walton SG, Joseph EA. Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4936622  0.76
2015 Farmer DB, Rodrigo D, Low T, Avouris P. Plasmon-plasmon hybridization and bandwidth enhancement in nanostructured graphene. Nano Letters. 15: 2582-7. PMID 25749426 DOI: 10.1021/acs.nanolett.5b00148  0.76
2015 Sun Y, Majumdar A, Cheng CW, Martin RM, Bruce RL, Yau JB, Farmer DB, Zhu Y, Hopstaken M, Frank MM, Ando T, Lee KT, Rozen J, Basu A, Shiu KT, et al. High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v Technical Digest - International Electron Devices Meeting, Iedm. 2015: 25.3.1-25.3.4. DOI: 10.1109/IEDM.2014.7047106  0.76
2014 Franklin AD, Farmer DB, Haensch W. Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors. Acs Nano. 8: 7333-9. PMID 24999536 DOI: 10.1021/nn5024363  0.76
2014 Li Y, Yan H, Farmer DB, Meng X, Zhu W, Osgood RM, Heinz TF, Avouris P. Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers. Nano Letters. 14: 1573-7. PMID 24528250 DOI: 10.1021/nl404824w  0.36
2014 Zhu W, Low T, Lee YH, Wang H, Farmer DB, Kong J, Xia F, Avouris P. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nature Communications. 5: 3087. PMID 24435154 DOI: 10.1038/ncomms4087  0.76
2014 Avouris P, Farmer DB, Freitag M, Li Y, Low T, Yan H, Wang H. Graphene plasmons: Properties and applications Proceedings of Spie - the International Society For Optical Engineering. 9162. DOI: 10.1117/12.2060587  0.76
2014 Majumdar A, Sun Y, Cheng CW, Kim YH, Rana U, Martin RM, Bruce RL, Shiu KT, Zhu Y, Farmer DB, Hopstaken M, Joseph EA, De Souza JP, Frank MM, Cheng SL, et al. CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm Ieee Transactions On Electron Devices. 61: 3399-3404. DOI: 10.1109/TED.2014.2335747  0.76
2014 Li Y, Yan H, Farmer DB, Meng X, Zhu W, Osgood RM, Heinz TF, Avouris P. Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers Nano Letters. 14: 1573-1577. DOI: 10.1021/nl404824w  0.76
2013 Franklin AD, Koswatta SO, Farmer DB, Smith JT, Gignac L, Breslin CM, Han SJ, Tulevski GS, Miyazoe H, Haensch W, Tersoff J. Carbon nanotube complementary wrap-gate transistors. Nano Letters. 13: 2490-5. PMID 23638708 DOI: 10.1021/nl400544q  0.76
2013 Valdes-Garcia A, Xia F, Han SJ, Farmer DB, Dimitrakopoulos C, Oida S, Yan H, Wu Y, Hedges CM, Jenkins KA, Pfeiffer D, Grill A, Avouris P, Haensch W. Graphene technology for RF and THz applications Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697638  0.76
2013 Franklin AD, Oida S, Farmer DB, Smith JT, Han SJ, Breslin CM, Gignac L. Stacking graphene channels in parallel for enhanced performance with the same footprint Ieee Electron Device Letters. 34: 556-558. DOI: 10.1109/LED.2013.2242428  0.76
2013 Wu Y, Farmer DB, Xia F, Avouris P. Graphene electronics: Materials, devices, and circuits Proceedings of the Ieee. 101: 1620-1637. DOI: 10.1109/JPROC.2013.2260311  0.36
2013 Jenkins KA, Farmer DB, Han SJ, Dimitrakopoulos C, Oida S, Valdes-Garcia A. Linearity of graphene field-effect transistors Applied Physics Letters. 103. DOI: 10.1063/1.4826932  0.76
2013 Zhu W, Low T, Farmer DB, Jenkins K, Ek B, Avouris P. Effect of dual gate control on the alternating current performance of graphene radio frequency device Journal of Applied Physics. 114. DOI: 10.1063/1.4816443  0.76
2013 Zhu W, Farmer DB, Jenkins KA, Ek B, Oida S, Li X, Bucchignano J, Dawes S, Duch EA, Avouris P. Graphene radio frequency devices on flexible substrate Applied Physics Letters. 102. DOI: 10.1063/1.4810008  0.76
2012 Liu G, Wu Y, Lin YM, Farmer DB, Ott JA, Bruley J, Grill A, Avouris P, Pfeiffer D, Balandin AA, Dimitrakopoulos C. Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography. Acs Nano. 6: 6786-92. PMID 22780305 DOI: 10.1021/nn301515a  0.36
2012 Wu Y, Jenkins KA, Valdes-Garcia A, Farmer DB, Zhu Y, Bol AA, Dimitrakopoulos C, Zhu W, Xia F, Avouris P, Lin YM. State-of-the-art graphene high-frequency electronics. Nano Letters. 12: 3062-7. PMID 22563820 DOI: 10.1021/nl300904k  0.76
2012 Wu Y, Farmer DB, Zhu W, Han SJ, Dimitrakopoulos CD, Bol AA, Avouris P, Lin YM. Three-terminal graphene negative differential resistance devices. Acs Nano. 6: 2610-6. PMID 22324780 DOI: 10.1021/nn205106z  0.76
2012 Abel J, Matsubayashi A, Murray T, Dimitrakopoulos C, Farmer DB, Afzali A, Grill A, Sung CY, Labella VP. Fabrication of an electrical spin transport device utilizing a diazonium salt/hafnium oxide interface layer on epitaxial graphene grown on 6 H-SiC(0001) Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4732460  0.76
2012 Farmer DB, Valdes-Garcia A, Dimitrakopoulos C, Avouris P. Impact of gate resistance in graphene radio frequency transistors Applied Physics Letters. 101. DOI: 10.1063/1.4757422  0.36
2012 Steiner M, Engel M, Lin YM, Wu Y, Jenkins K, Farmer DB, Humes JJ, Yoder NL, Seo JWT, Green AA, Hersam MC, Krupke R, Avouris P. High-frequency performance of scaled carbon nanotube array field-effect transistors Applied Physics Letters. 101. DOI: 10.1063/1.4742325  0.76
2011 Lin YM, Valdes-Garcia A, Han SJ, Farmer DB, Meric I, Sun Y, Wu Y, Dimitrakopoulos C, Grill A, Avouris P, Jenkins KA. Wafer-scale graphene integrated circuit. Science (New York, N.Y.). 332: 1294-7. PMID 21659599 DOI: 10.1126/science.1204428  0.76
2011 Wu Y, Lin YM, Bol AA, Jenkins KA, Xia F, Farmer DB, Zhu Y, Avouris P. High-frequency, scaled graphene transistors on diamond-like carbon. Nature. 472: 74-8. PMID 21475197 DOI: 10.1038/nature09979  0.76
2011 Lin YM, Jenkins KA, Ott J, Dimitrakopoulos C, Farmer DB, Wu Y, Grill A, Avouris P. Electrical characterization of wafer-scale epitaxial graphene and its RF applications Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2011.5972909  0.76
2011 Lin YM, Farmer DB, Jenkins KA, Wu Y, Tedesco JL, Myers-Ward RL, Eddy CR, Gaskill DK, Dimitrakopoulos C, Avouris P. Enhanced performance in epitaxial graphene FETs with optimized channel morphology Ieee Electron Device Letters. 32: 1343-1345. DOI: 10.1109/LED.2011.2162934  0.76
2011 Wu YQ, Farmer DB, Valdes-Garcia A, Zhu WJ, Jenkins KA, Dimitrakopoulos C, Avouris P, Lin YM. Record high RF performance for epitaxial graphene transistors Technical Digest - International Electron Devices Meeting, Iedm. 23.8.1-23.8.3. DOI: 10.1109/IEDM.2011.6131601  0.76
2011 Farmer DB, Perebeinos V, Lin YM, Dimitrakopoulos C, Avouris P. Charge trapping and scattering in epitaxial graphene Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/PhysRevB.84.205417  0.76
2010 Lin YM, Dimitrakopoulos C, Jenkins KA, Farmer DB, Chiu HY, Grill A, Avouris P. 100-GHz transistors from wafer-scale epitaxial graphene. Science (New York, N.Y.). 327: 662. PMID 20133565 DOI: 10.1126/science.1184289  0.76
2010 Xia F, Farmer DB, Lin YM, Avouris P. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. Nano Letters. 10: 715-8. PMID 20092332 DOI: 10.1021/nl9039636  0.36
2010 Mueller T, Kinoshita M, Steiner M, Perebeinos V, Bol AA, Farmer DB, Avouris P. Efficient narrow-band light emission from a single carbon nanotube p-n diode. Nature Nanotechnology. 5: 27-31. PMID 19915571 DOI: 10.1038/nnano.2009.319  0.76
2010 Dimitrakopoulos C, Lin YM, Grill A, Farmer DB, Freitag M, Sun Y, Han SJ, Chen Z, Jenkins KA, Zhu Y, Liu Z, McArdle TJ, Ott JA, Wisnieff R, Avouris P. Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 985-992. DOI: 10.1116/1.3480961  0.76
2010 Lin YM, Chiu HY, Jenkins KA, Farmer DB, Avouris P, Valdes-Garcia A. Dual-gate graphene FETs with fT of 50 GHz Ieee Electron Device Letters. 31: 68-70. DOI: 10.1109/LED.2009.2034876  0.76
2010 Avouris P, Lin YM, Xia F, Farmer DB, Wu Y, Mueller T, Jenkins K, Dimitrakopoulos C, Grill A. Graphene-based fast electronics and optoelectronics Technical Digest - International Electron Devices Meeting, Iedm. 23.1.1-23.1.4. DOI: 10.1109/IEDM.2010.5703418  0.36
2010 Wu YQ, Lin YM, Jenkins KA, Ott JA, Dimitrakopoulos C, Farmer DB, Xia F, Grill A, Antoniadis DA, Avouris P. RF performance of short channel graphene field-effect transistor Technical Digest - International Electron Devices Meeting, Iedm. 9.6.1-9.6.3. DOI: 10.1109/IEDM.2010.5703331  0.76
2010 Lin YM, Dimitrakopoulos C, Farmer DB, Han SJ, Wu Y, Zhu W, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Grill A, Avouris P. Multicarrier transport in epitaxial multilayer graphene Applied Physics Letters. 97. DOI: 10.1063/1.3485671  0.76
2010 Farmer DB, Lin YM, Avouris P. Graphene field-effect transistors with self-aligned gates Applied Physics Letters. 97. DOI: 10.1063/1.3459972  0.36
2009 Farmer DB, Chiu HY, Lin YM, Jenkins KA, Xia F, Avouris P. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors. Nano Letters. 9: 4474-8. PMID 19883119 DOI: 10.1021/nl902788u  0.76
2009 Farmer DB, Golizadeh-Mojarad R, Perebeinos V, Lin YM, Tulevski GS, Tsang JC, Avouris P. Chemical doping and electron-hole conduction asymmetry in graphene devices. Nano Letters. 9: 388-92. PMID 19102701 DOI: 10.1021/nl803214a  0.76
2009 Lin YM, Jenkins KA, Valdes-Garcia A, Small JP, Farmer DB, Avouris P. Operation of graphene transistors at gigahertz frequencies. Nano Letters. 9: 422-6. PMID 19099364 DOI: 10.1021/nl803316h  0.76
2009 Farmer DB, Lin YM, Afzali-Ardakani A, Avouris P. Behavior of a chemically doped graphene junction Applied Physics Letters. 94. DOI: 10.1063/1.3142865  0.36
2008 Lin YM, Farmer DB, Tulevski GS, Xu S, Gordon RG, Avouris P. Chemical doping of graphene nanoribbon field-effect devices Device Research Conference - Conference Digest, Drc. 27-28. DOI: 10.1109/DRC.2008.4800721  0.96
2007 Li H, Farmer DB, Gordon RG, Lin Y, Vlassak J. Vapor deposition of ruthenium from an amidinate precursor Journal of the Electrochemical Society. 154: D642-D647. DOI: 10.1149/1.2789294  0.96
2007 Farmer DB, Gordon RG. High density Ru nanocrystal deposition for nonvolatile memory applications Journal of Applied Physics. 101. DOI: 10.1063/1.2740351  0.96
2006 Farmer DB, Gordon RG. Atomic layer deposition on suspended single-walled carbon nanotubes via gas-phase noncovalent functionalization. Nano Letters. 6: 699-703. PMID 16608267 DOI: 10.1021/nl052453d  0.96
2006 Kim KH, Farmer DB, Lehn JSM, Venkateswara Rao P, Gordon RG. Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current Applied Physics Letters. 89. DOI: 10.1063/1.2354423  0.76
2005 Javey A, Tu R, Farmer DB, Guo J, Gordon RG, Dai H. High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. Nano Letters. 5: 345-8. PMID 15794623 DOI: 10.1021/nl047931j  0.96
2005 Li Z, Gordon RG, Farmer DB, Lin Y, Vlassak J. Nucleation and adhesion of ALD copper on cobalt adhesion layers and tungsten nitride diffusion barriers Electrochemical and Solid-State Letters. 8: G182-G185. DOI: 10.1149/1.1924929  0.96
2005 Farmer DB, Gordon RG. ALD of high-κ Dielectrics on suspended functionalized SWNTs Electrochemical and Solid-State Letters. 8: G89-G91. DOI: 10.1149/1.1862474  0.96
2004 Chen P, Mitsui T, Farmer DB, Golovchenko J, Gordon RG, Branton D. Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores. Nano Letters. 4: 1333-1337. PMID 24991194 DOI: 10.1021/nl0494001  0.76
2004 Wang D, Chang YL, Wang Q, Cao J, Farmer DB, Gordon RG, Dai H. Surface chemistry and electrical properties of germanium nanowires. Journal of the American Chemical Society. 126: 11602-11. PMID 15366907 DOI: 10.1021/ja047435x  0.96
2004 Brewer JC, Walters RJ, Bell LD, Farmer DB, Gordon RG, Atwater HA. Determination of energy barrier profiles for high-k dielectric materials utilizing bias-dependent internal photoemission Applied Physics Letters. 85: 4133-4135. DOI: 10.1063/1.1812831  0.76
2004 Javey A, Guo J, Farmer DB, Wang Q, Yenilmez E, Gordon RG, Lundstrom M, Dai H. Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays Nano Letters. 4: 1319-1322. DOI: 10.1021/nl049222b  0.96
2004 Javey A, Guo J, Farmer DB, Wang Q, Wang D, Gordon RG, Lundstrom M, Dai H. Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics Nano Letters. 4: 447-450. DOI: 10.1021/nl035185x  0.96
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