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Damon B. Farmer, Ph.D. - Publications

Affiliations: 
2007 Harvard University, Cambridge, MA, United States 
Area:
applied mathematics, quantum mechanics, spectroscopy, intermolecular forces, solid state and materials science
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68 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Ho PH, Farmer DB, Tulevski GS, Han SJ, Bishop DM, Gignac LM, Bucchignano J, Avouris P, Falk AL. Intrinsically ultrastrong plasmon-exciton interactions in crystallized films of carbon nanotubes. Proceedings of the National Academy of Sciences of the United States of America. PMID 30459274 DOI: 10.1073/Pnas.1816251115  0.36
2018 Engel M, Farmer DB, Azpiroz JT, Seo JT, Kang J, Avouris P, Hersam MC, Krupke R, Steiner M. Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration. Nature Communications. 9: 4095. PMID 30291247 DOI: 10.1038/S41467-018-06604-4  0.459
2018 Demuru S, Nela L, Marchack N, Holmes SJ, Farmer DB, Tulevski GS, Lin Q, Deligianni H. Scalable Nanostructured Carbon Electrode Arrays for Enhanced Dopamine Detection. Acs Sensors. PMID 29480715 DOI: 10.1021/Acssensors.8B00043  0.313
2018 Antunez PD, Li S, Bishop DM, Farmer DB, Gershon TS, Baxter JB, Haight R. Passivation and thickness control of highly efficient kesterite solar cells Applied Physics Letters. 113: 033903. DOI: 10.1063/1.5037093  0.422
2017 Chiu KC, Falk AL, Ho PH, Farmer DB, Tulevski GS, Lee YH, Avouris P, Han SJ. Strong and broadly tunable plasmon resonances in thick films of aligned carbon nanotubes. Nano Letters. PMID 28763225 DOI: 10.1021/Acs.Nanolett.7B02522  0.395
2017 Falk AL, Chiu KC, Farmer DB, Cao Q, Tersoff J, Lee YH, Avouris P, Han SJ. Coherent Plasmon and Phonon-Plasmon Resonances in Carbon Nanotubes. Physical Review Letters. 118: 257401. PMID 28696746 DOI: 10.1103/Physrevlett.118.257401  0.386
2017 Han SJ, Tang J, Kumar B, Falk A, Farmer D, Tulevski G, Jenkins K, Afzali A, Oida S, Ott J, Hannon J, Haensch W. High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes. Nature Nanotechnology. PMID 28674460 DOI: 10.1038/Nnano.2017.115  0.371
2017 Cao Q, Tersoff J, Farmer DB, Zhu Y, Han SJ. Carbon nanotube transistors scaled to a 40-nanometer footprint. Science (New York, N.Y.). 356: 1369-1372. PMID 28663497 DOI: 10.1126/Science.Aan2476  0.441
2017 Price KM, Schauble KE, McGuire FA, Farmer DB, Franklin AD. Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition. Acs Applied Materials & Interfaces. PMID 28653822 DOI: 10.1021/Acsami.7B00538  0.45
2017 Tang J, Cao Q, Farmer DB, Tulevski G, Han S. High-Performance Carbon Nanotube Complementary Logic With End-Bonded Contacts Ieee Transactions On Electron Devices. 64: 2744-2750. DOI: 10.1109/Ted.2017.2692526  0.374
2016 Deng B, Guo Q, Li C, Wang H, Ling X, Farmer DB, Han SJ, Kong J, Xia F. Coupling-Enhanced Broadband Mid-infrared Light Absorption in Graphene Plasmonic Nanostructures. Acs Nano. 10: 11172-11178. PMID 28024379 DOI: 10.1021/Acsnano.6B06203  0.407
2016 Guo Q, Pospischil A, Bhuiyan M, Jiang H, Tian H, Farmer DB, Deng B, Li C, Han SJ, Wang H, Xia Q, Ma TP, Mueller T, Xia F. Black Phosphorus Mid-Infrared Photodetectors with High Gain. Nano Letters. PMID 27332146 DOI: 10.1021/Acs.Nanolett.6B01977  0.344
2016 Li L, Engel M, Farmer DB, Han SJ, Wong HP. High Performance P-type Black Phosphorus Transistor with Scandium Contact. Acs Nano. PMID 27023751 DOI: 10.1021/Acsnano.6B01008  0.393
2016 Jagtiani AV, Miyazoe H, Chang J, Farmer DB, Engel M, Neumayer D, Han SJ, Engelmann SU, Boris DR, Hernández SC, Lock EH, Walton SG, Joseph EA. Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4936622  0.397
2016 Rodrigo D, Low T, Farmer DB, Altug H, Avouris P. Plasmon coupling in extended structures: Graphene superlattice nanoribbon arrays Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.125407  0.39
2016 Farmer DB, Avouris P, Li Y, Heinz TF, Han SJ. Ultrasensitive Plasmonic Detection of Molecules with Graphene Acs Photonics. 3: 553-557. DOI: 10.1021/Acsphotonics.6B00143  0.361
2015 Farmer DB, Rodrigo D, Low T, Avouris P. Plasmon-plasmon hybridization and bandwidth enhancement in nanostructured graphene. Nano Letters. 15: 2582-7. PMID 25749426 DOI: 10.1021/Acs.Nanolett.5B00148  0.386
2014 Franklin AD, Farmer DB, Haensch W. Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors. Acs Nano. 8: 7333-9. PMID 24999536 DOI: 10.1021/Nn5024363  0.359
2014 Li Y, Yan H, Farmer DB, Meng X, Zhu W, Osgood RM, Heinz TF, Avouris P. Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers. Nano Letters. 14: 1573-7. PMID 24528250 DOI: 10.1021/Nl404824W  0.331
2014 Zhu W, Low T, Lee YH, Wang H, Farmer DB, Kong J, Xia F, Avouris P. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nature Communications. 5: 3087. PMID 24435154 DOI: 10.1038/Ncomms4087  0.43
2014 Avouris P, Farmer DB, Freitag M, Li Y, Low T, Yan H, Wang H. Graphene plasmons: Properties and applications Proceedings of Spie - the International Society For Optical Engineering. 9162. DOI: 10.1117/12.2060587  0.401
2014 Majumdar A, Sun Y, Cheng CW, Kim YH, Rana U, Martin RM, Bruce RL, Shiu KT, Zhu Y, Farmer DB, Hopstaken M, Joseph EA, De Souza JP, Frank MM, Cheng SL, et al. CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm Ieee Transactions On Electron Devices. 61: 3399-3404. DOI: 10.1109/Ted.2014.2335747  0.361
2013 Franklin AD, Koswatta SO, Farmer DB, Smith JT, Gignac L, Breslin CM, Han SJ, Tulevski GS, Miyazoe H, Haensch W, Tersoff J. Carbon nanotube complementary wrap-gate transistors. Nano Letters. 13: 2490-5. PMID 23638708 DOI: 10.1021/Nl400544Q  0.425
2013 Smith JT, Franklin AD, Farmer DB, Dimitrakopoulos CD. Reducing contact resistance in graphene devices through contact area patterning. Acs Nano. 7: 3661-7. PMID 23473291 DOI: 10.1021/Nn400671Z  0.443
2013 Franklin AD, Oida S, Farmer DB, Smith JT, Han SJ, Breslin CM, Gignac L. Stacking graphene channels in parallel for enhanced performance with the same footprint Ieee Electron Device Letters. 34: 556-558. DOI: 10.1109/Led.2013.2242428  0.468
2013 Jenkins KA, Farmer DB, Han SJ, Dimitrakopoulos C, Oida S, Valdes-Garcia A. Linearity of graphene field-effect transistors Applied Physics Letters. 103. DOI: 10.1063/1.4826932  0.447
2013 Zhu W, Low T, Farmer DB, Jenkins K, Ek B, Avouris P. Effect of dual gate control on the alternating current performance of graphene radio frequency device Journal of Applied Physics. 114. DOI: 10.1063/1.4816443  0.457
2013 Zhu W, Farmer DB, Jenkins KA, Ek B, Oida S, Li X, Bucchignano J, Dawes S, Duch EA, Avouris P. Graphene radio frequency devices on flexible substrate Applied Physics Letters. 102. DOI: 10.1063/1.4810008  0.449
2012 Liu G, Wu Y, Lin YM, Farmer DB, Ott JA, Bruley J, Grill A, Avouris P, Pfeiffer D, Balandin AA, Dimitrakopoulos C. Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography. Acs Nano. 6: 6786-92. PMID 22780305 DOI: 10.1021/Nn301515A  0.432
2012 Wu Y, Jenkins KA, Valdes-Garcia A, Farmer DB, Zhu Y, Bol AA, Dimitrakopoulos C, Zhu W, Xia F, Avouris P, Lin YM. State-of-the-art graphene high-frequency electronics. Nano Letters. 12: 3062-7. PMID 22563820 DOI: 10.1021/Nl300904K  0.443
2012 Wu Y, Farmer DB, Zhu W, Han SJ, Dimitrakopoulos CD, Bol AA, Avouris P, Lin YM. Three-terminal graphene negative differential resistance devices. Acs Nano. 6: 2610-6. PMID 22324780 DOI: 10.1021/Nn205106Z  0.44
2012 Abel J, Matsubayashi A, Murray T, Dimitrakopoulos C, Farmer DB, Afzali A, Grill A, Sung CY, Labella VP. Fabrication of an electrical spin transport device utilizing a diazonium salt/hafnium oxide interface layer on epitaxial graphene grown on 6 H-SiC(0001) Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4732460  0.436
2012 Farmer DB, Valdes-Garcia A, Dimitrakopoulos C, Avouris P. Impact of gate resistance in graphene radio frequency transistors Applied Physics Letters. 101. DOI: 10.1063/1.4757422  0.414
2012 Steiner M, Engel M, Lin YM, Wu Y, Jenkins K, Farmer DB, Humes JJ, Yoder NL, Seo JWT, Green AA, Hersam MC, Krupke R, Avouris P. High-frequency performance of scaled carbon nanotube array field-effect transistors Applied Physics Letters. 101. DOI: 10.1063/1.4742325  0.392
2011 Lin YM, Valdes-Garcia A, Han SJ, Farmer DB, Meric I, Sun Y, Wu Y, Dimitrakopoulos C, Grill A, Avouris P, Jenkins KA. Wafer-scale graphene integrated circuit. Science (New York, N.Y.). 332: 1294-7. PMID 21659599 DOI: 10.1126/Science.1204428  0.415
2011 Wu Y, Lin YM, Bol AA, Jenkins KA, Xia F, Farmer DB, Zhu Y, Avouris P. High-frequency, scaled graphene transistors on diamond-like carbon. Nature. 472: 74-8. PMID 21475197 DOI: 10.1038/Nature09979  0.455
2011 Lin YM, Jenkins KA, Ott J, Dimitrakopoulos C, Farmer DB, Wu Y, Grill A, Avouris P. Electrical characterization of wafer-scale epitaxial graphene and its RF applications Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2011.5972909  0.316
2011 Lin YM, Farmer DB, Jenkins KA, Wu Y, Tedesco JL, Myers-Ward RL, Eddy CR, Gaskill DK, Dimitrakopoulos C, Avouris P. Enhanced performance in epitaxial graphene FETs with optimized channel morphology Ieee Electron Device Letters. 32: 1343-1345. DOI: 10.1109/Led.2011.2162934  0.44
2011 Wu YQ, Farmer DB, Valdes-Garcia A, Zhu WJ, Jenkins KA, Dimitrakopoulos C, Avouris P, Lin YM. Record high RF performance for epitaxial graphene transistors Technical Digest - International Electron Devices Meeting, Iedm. 23.8.1-23.8.3. DOI: 10.1109/IEDM.2011.6131601  0.319
2011 Farmer DB, Perebeinos V, Lin YM, Dimitrakopoulos C, Avouris P. Charge trapping and scattering in epitaxial graphene Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.205417  0.372
2010 Lin YM, Dimitrakopoulos C, Jenkins KA, Farmer DB, Chiu HY, Grill A, Avouris P. 100-GHz transistors from wafer-scale epitaxial graphene. Science (New York, N.Y.). 327: 662. PMID 20133565 DOI: 10.1126/Science.1184289  0.475
2010 Xia F, Farmer DB, Lin YM, Avouris P. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. Nano Letters. 10: 715-8. PMID 20092332 DOI: 10.1021/Nl9039636  0.452
2010 Mueller T, Kinoshita M, Steiner M, Perebeinos V, Bol AA, Farmer DB, Avouris P. Efficient narrow-band light emission from a single carbon nanotube p-n diode. Nature Nanotechnology. 5: 27-31. PMID 19915571 DOI: 10.1038/Nnano.2009.319  0.349
2010 Jenkins KA, Lin YM, Farmer D, Dimitrakopoulos C, Chiu HY, Valdes-Garcia A, Avouris P, Grill A. Graphene RF transistor performance Ecs Transactions. 28: 3-13. DOI: 10.1149/1.3367931  0.344
2010 Lei B, Ryu K, De-Arco LG, Han S, Badmaev A, Farmer D, Kim K, Gordon R, Wang KL, Zhou C. Raman characterization and polarity tuning of aligned single-walled carbon nanotubes on quartz Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.02Bc02  0.594
2010 Dimitrakopoulos C, Lin YM, Grill A, Farmer DB, Freitag M, Sun Y, Han SJ, Chen Z, Jenkins KA, Zhu Y, Liu Z, McArdle TJ, Ott JA, Wisnieff R, Avouris P. Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 985-992. DOI: 10.1116/1.3480961  0.463
2010 Lin YM, Chiu HY, Jenkins KA, Farmer DB, Avouris P, Valdes-Garcia A. Dual-gate graphene FETs with fT of 50 GHz Ieee Electron Device Letters. 31: 68-70. DOI: 10.1109/Led.2009.2034876  0.464
2010 Oida S, McFeely FR, Hannon JB, Tromp RM, Copel M, Chen Z, Sun Y, Farmer DB, Yurkas J. Decoupling graphene from SiC(0001) via oxidation Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.041411  0.454
2010 Lin YM, Dimitrakopoulos C, Farmer DB, Han SJ, Wu Y, Zhu W, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Grill A, Avouris P. Multicarrier transport in epitaxial multilayer graphene Applied Physics Letters. 97. DOI: 10.1063/1.3485671  0.435
2010 Farmer DB, Lin YM, Avouris P. Graphene field-effect transistors with self-aligned gates Applied Physics Letters. 97. DOI: 10.1063/1.3459972  0.497
2009 Farmer DB, Chiu HY, Lin YM, Jenkins KA, Xia F, Avouris P. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors. Nano Letters. 9: 4474-8. PMID 19883119 DOI: 10.1021/Nl902788U  0.459
2009 Farmer DB, Golizadeh-Mojarad R, Perebeinos V, Lin YM, Tulevski GS, Tsang JC, Avouris P. Chemical doping and electron-hole conduction asymmetry in graphene devices. Nano Letters. 9: 388-92. PMID 19102701 DOI: 10.1021/Nl803214A  0.442
2009 Lin YM, Jenkins KA, Valdes-Garcia A, Small JP, Farmer DB, Avouris P. Operation of graphene transistors at gigahertz frequencies. Nano Letters. 9: 422-6. PMID 19099364 DOI: 10.1021/Nl803316H  0.39
2009 Farmer DB, Lin YM, Afzali-Ardakani A, Avouris P. Behavior of a chemically doped graphene junction Applied Physics Letters. 94. DOI: 10.1063/1.3142865  0.443
2008 Chen Z, Farmer D, Xu S, Gordon R, Avouris P, Appenzeller J. Externally assembled gate-all-around carbon nanotube field-effect transistor Ieee Electron Device Letters. 29: 183-185. DOI: 10.1109/Led.2007.914069  0.603
2008 Lin YM, Farmer DB, Tulevski GS, Xu S, Gordon RG, Avouris P. Chemical doping of graphene nanoribbon field-effect devices Device Research Conference - Conference Digest, Drc. 27-28. DOI: 10.1109/DRC.2008.4800721  0.329
2007 Li H, Farmer DB, Gordon RG, Lin Y, Vlassak J. Vapor deposition of ruthenium from an amidinate precursor Journal of the Electrochemical Society. 154: D642-D647. DOI: 10.1149/1.2789294  0.524
2007 Farmer DB, Gordon RG. High density Ru nanocrystal deposition for nonvolatile memory applications Journal of Applied Physics. 101. DOI: 10.1063/1.2740351  0.535
2006 Farmer DB, Gordon RG. Atomic layer deposition on suspended single-walled carbon nanotubes via gas-phase noncovalent functionalization. Nano Letters. 6: 699-703. PMID 16608267 DOI: 10.1021/Nl052453D  0.567
2006 Kim KH, Farmer DB, Lehn JSM, Venkateswara Rao P, Gordon RG. Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current Applied Physics Letters. 89. DOI: 10.1063/1.2354423  0.616
2005 Javey A, Tu R, Farmer DB, Guo J, Gordon RG, Dai H. High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. Nano Letters. 5: 345-8. PMID 15794623 DOI: 10.1021/Nl047931J  0.601
2005 Li Z, Gordon RG, Farmer DB, Lin Y, Vlassak J. Nucleation and adhesion of ALD copper on cobalt adhesion layers and tungsten nitride diffusion barriers Electrochemical and Solid-State Letters. 8: G182-G185. DOI: 10.1149/1.1924929  0.592
2005 Farmer DB, Gordon RG. ALD of high-κ Dielectrics on suspended functionalized SWNTs Electrochemical and Solid-State Letters. 8: G89-G91. DOI: 10.1149/1.1862474  0.576
2004 Chen P, Mitsui T, Farmer DB, Golovchenko J, Gordon RG, Branton D. Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores. Nano Letters. 4: 1333-1337. PMID 24991194 DOI: 10.1021/Nl0494001  0.552
2004 Wang D, Chang YL, Wang Q, Cao J, Farmer DB, Gordon RG, Dai H. Surface chemistry and electrical properties of germanium nanowires. Journal of the American Chemical Society. 126: 11602-11. PMID 15366907 DOI: 10.1021/Ja047435X  0.555
2004 Brewer JC, Walters RJ, Bell LD, Farmer DB, Gordon RG, Atwater HA. Determination of energy barrier profiles for high-k dielectric materials utilizing bias-dependent internal photoemission Applied Physics Letters. 85: 4133-4135. DOI: 10.1063/1.1812831  0.526
2004 Javey A, Guo J, Farmer DB, Wang Q, Yenilmez E, Gordon RG, Lundstrom M, Dai H. Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays Nano Letters. 4: 1319-1322. DOI: 10.1021/Nl049222B  0.599
2004 Javey A, Guo J, Farmer DB, Wang Q, Wang D, Gordon RG, Lundstrom M, Dai H. Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics Nano Letters. 4: 447-450. DOI: 10.1021/Nl035185X  0.608
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