Year |
Citation |
Score |
2021 |
Li Z, Cordovilla Leon DF, Lee W, Datta K, Lyu Z, Hou J, Taniguchi T, Watanabe K, Kioupakis E, Deotare PB. Dielectric Engineering for Manipulating Exciton Transport in Semiconductor Monolayers. Nano Letters. PMID 34591493 DOI: 10.1021/acs.nanolett.1c02990 |
0.635 |
|
2020 |
Chae S, Paik H, Vu NM, Kioupakis E, Heron JT. Epitaxial stabilization of rutile germanium oxide thin film by molecular beam epitaxy Applied Physics Letters. 117: 72105. DOI: 10.1063/5.0018031 |
0.336 |
|
2020 |
Chae S, Mengle KA, Lu R, Olvera A, Sanders N, Lee J, Poudeu PFP, Heron JT, Kioupakis E. Thermal conductivity of rutile germanium dioxide Applied Physics Letters. 117: 102106. DOI: 10.1063/5.0011358 |
0.354 |
|
2020 |
McMahon JM, Tanner DSP, Kioupakis E, Schulz S. Atomistic analysis of radiative recombination rate, Stokes shift, and density of states in c-plane InGaN/GaN quantum wells Applied Physics Letters. 116: 181104. DOI: 10.1063/5.0006128 |
0.43 |
|
2020 |
Song B, Chen K, Bushick K, Mengle KA, Tian F, Gamage GAGU, Ren Z, Kioupakis E, Chen G. Optical properties of cubic boron arsenide Applied Physics Letters. 116: 141903. DOI: 10.1063/5.0004666 |
0.365 |
|
2020 |
Wen Q, Wu Y, Wang P, Laleyan D, Bayerl D, Kioupakis E, Mi Z, Kira M. Hyperspectral absorption of semiconductor monolayer crystals Applied Physics Letters. 116: 181103. DOI: 10.1063/5.0004119 |
0.384 |
|
2020 |
Wu Y, Liu X, Wang P, Laleyan DA, Sun K, Sun Y, Ahn C, Kira M, Kioupakis E, Mi Z. Monolayer GaN excitonic deep ultraviolet light emitting diodes Applied Physics Letters. 116: 013101. DOI: 10.1063/1.5124828 |
0.441 |
|
2020 |
Wu Y, Laleyan DA, Deng Z, Ahn C, Aiello AF, Pandey A, Liu X, Wang P, Sun K, Ahmadi E, Sun Y, Kira M, Bhattacharya PK, Kioupakis E, Mi Z. Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors Advanced Electronic Materials. 2000337. DOI: 10.1002/Aelm.202000337 |
0.313 |
|
2019 |
Aiello A, Wu Y, Pandey A, Wang P, Lee W, Bayerl D, Sanders N, Deng Z, Gim J, Sun K, Hovden R, Kioupakis E, Mi Z, Bhattacharya P. Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures. Nano Letters. PMID 31573819 DOI: 10.1021/Acs.Nanolett.9B02847 |
0.461 |
|
2019 |
Makin RA, York K, Durbin SM, Senabulya N, Mathis J, Clarke R, Feldberg N, Miska P, Jones CM, Deng Z, Williams L, Kioupakis E, Reeves RJ. Alloy-Free Band Gap Tuning across the Visible Spectrum. Physical Review Letters. 122: 256403. PMID 31347908 DOI: 10.1103/Physrevlett.122.256403 |
0.433 |
|
2019 |
Lee J, Schell W, Zhu X, Kioupakis E, Lu WD. Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-based RRAM. Acs Applied Materials & Interfaces. PMID 30816044 DOI: 10.1021/Acsami.8B18386 |
0.323 |
|
2019 |
Williams L, Kioupakis E. BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs Applied Physics Letters. 115: 231103. DOI: 10.1063/1.5129387 |
0.463 |
|
2019 |
Bayerl D, Kioupakis E. Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells Applied Physics Letters. 115: 131101. DOI: 10.1063/1.5111546 |
0.443 |
|
2019 |
Mengle KA, Chae S, Kioupakis E. Quasiparticle band structure and optical properties of rutile GeO2, an ultra-wide-band-gap semiconductor Journal of Applied Physics. 126: 85703. DOI: 10.1063/1.5111318 |
0.412 |
|
2019 |
Peelaers H, Kioupakis E, Walle CGVd. Limitations of In2O3 as a transparent conducting oxide Applied Physics Letters. 115: 82105. DOI: 10.1063/1.5109569 |
0.438 |
|
2019 |
Greenman K, Williams L, Kioupakis E. Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys Journal of Applied Physics. 126: 55702. DOI: 10.1063/1.5108731 |
0.721 |
|
2019 |
Chae S, Lee J, Mengle KA, Heron JT, Kioupakis E. Rutile GeO2: An ultrawide-band-gap semiconductor with ambipolar doping Applied Physics Letters. 114: 102104. DOI: 10.1063/1.5088370 |
0.454 |
|
2019 |
Mengle KA, Kioupakis E. Impact of the stacking sequence on the bandgap and luminescence properties of bulk, bilayer, and monolayer hexagonal boron nitride Apl Materials. 7: 21106. DOI: 10.1063/1.5087836 |
0.46 |
|
2019 |
Bushick K, Mengle K, Sanders N, Kioupakis E. Band structure and carrier effective masses of boron arsenide: Effects of quasiparticle and spin-orbit coupling corrections Applied Physics Letters. 114: 22101. DOI: 10.1063/1.5062845 |
0.492 |
|
2019 |
Mengle KA, Kioupakis E. Vibrational and electron-phonon coupling properties of β-Ga2O3 from first-principles calculations: Impact on the mobility and breakdown field Aip Advances. 9: 15313. DOI: 10.1063/1.5055238 |
0.428 |
|
2019 |
Waters MJ, Hashemi D, Shi G, Kioupakis E, Kieffer J. Predictive Simulations for Tuning Electronic and Optical Properties of SubPc Derivatives Journal of Electronic Materials. 48: 2962-2970. DOI: 10.1007/S11664-019-06961-W |
0.397 |
|
2018 |
Laleyan DA, Mengle K, Zhao S, Wang Y, Kioupakis E, Mi Z. Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy. Optics Express. 26: 23031-23039. PMID 30184959 DOI: 10.1364/Oe.26.023031 |
0.371 |
|
2018 |
Chen EM, Williams L, Olvera A, Zhang C, Zhang M, Shi G, Heron JT, Qi L, Guo LJ, Kioupakis E, Poudeu PFP. Sustainable p-type copper selenide solar material with ultra-large absorption coefficient. Chemical Science. 9: 5405-5414. PMID 30009012 DOI: 10.1039/C8Sc00873F |
0.404 |
|
2018 |
Moroz NA, Bauer C, Williams L, Olvera A, Casamento J, Page AA, Bailey TP, Weiland A, Stoyko SS, Kioupakis E, Uher C, Aitken JA, Poudeu PFP. Insights on the Synthesis, Crystal and Electronic Structures, and Optical and Thermoelectric Properties of SrSb HfSe Orthorhombic Perovskite. Inorganic Chemistry. PMID 29863367 DOI: 10.1021/Acs.Inorgchem.8B01038 |
0.417 |
|
2018 |
Chae S, Mengle K, Heron JT, Kioupakis E. Point defects and dopants of boron arsenide from first-principles calculations: Donor compensation and doping asymmetry Applied Physics Letters. 113: 212101. DOI: 10.1063/1.5062267 |
0.401 |
|
2018 |
McAllister A, Bayerl D, Kioupakis E. Radiative and Auger recombination processes in indium nitride Applied Physics Letters. 112: 251108. DOI: 10.1063/1.5038106 |
0.433 |
|
2018 |
Shi G, Kioupakis E. Relativistic quasiparticle band structures of Mg2Si, Mg2Ge, and Mg2Sn: Consistent parameterization and prediction of Seebeck coefficients Journal of Applied Physics. 123: 85114. DOI: 10.1063/1.5018186 |
0.438 |
|
2018 |
Das S, Shi G, Sanders N, Kioupakis E. Electronic and Optical Properties of Two-Dimensional α-PbO from First Principles Chemistry of Materials. 30: 7124-7129. DOI: 10.1021/Acs.Chemmater.8B02956 |
0.504 |
|
2017 |
Sanders N, Bayerl D, Shi G, Mengle KA, Kioupakis E. Electronic and optical properties of two-dimensional GaN from first principles. Nano Letters. PMID 29068214 DOI: 10.1021/Acs.Nanolett.7B03003 |
0.477 |
|
2017 |
Xie L, Li L, Heikes CA, Zhang Y, Hong Z, Gao P, Nelson CT, Xue F, Kioupakis E, Chen L, Schlom DG, Wang P, Pan X. Giant Ferroelectric Polarization in Ultrathin Ferroelectrics via Boundary-Condition Engineering. Advanced Materials (Deerfield Beach, Fla.). PMID 28585347 DOI: 10.1002/Adma.201701475 |
0.373 |
|
2017 |
Jones CM, Teng CH, Yan Q, Ku PC, Kioupakis E. Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations Applied Physics Letters. 111: 113501. DOI: 10.1063/1.5002104 |
0.679 |
|
2017 |
Williams L, Kioupakis E. BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs Applied Physics Letters. 111: 211107. DOI: 10.1063/1.4997601 |
0.469 |
|
2017 |
Jones CM, Kioupakis E. Effect of strain on band alignment of GaAsSb/GaAs quantum wells Journal of Applied Physics. 122: 45703. DOI: 10.1063/1.4994305 |
0.37 |
|
2017 |
Thompson T, Yu S, Williams L, Schmidt RD, Garcia-Mendez R, Wolfenstine J, Allen JL, Kioupakis E, Siegel DJ, Sakamoto J. Electrochemical Window of the Li-Ion Solid Electrolyte Li7La3Zr2O12 Acs Energy Letters. 2: 462-468. DOI: 10.1021/Acsenergylett.6B00593 |
0.384 |
|
2016 |
Lee J, Lu WD, Kioupakis E. Electronic and optical properties of oxygen vacancies in amorphous Ta2O5 from first principles. Nanoscale. PMID 28009928 DOI: 10.1039/C6Nr07892C |
0.407 |
|
2016 |
Lee J, Du C, Sun K, Kioupakis E, Lu WD. Tuning Ionic Transport in Memristive Devices by Graphene with Engineered Nanopores. Acs Nano. PMID 26954948 DOI: 10.1021/Acsnano.5B07943 |
0.318 |
|
2016 |
Man MK, Deckoff-Jones S, Winchester A, Shi G, Gupta G, Mohite AD, Kar S, Kioupakis E, Talapatra S, Dani KM. Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer. Scientific Reports. 6: 20890. PMID 26869269 DOI: 10.1038/Srep20890 |
0.349 |
|
2016 |
Bayerl D, Islam S, Jones CM, Protasenko V, Jena D, Kioupakis E. Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures Applied Physics Letters. 109: 241102. DOI: 10.1063/1.4971968 |
0.483 |
|
2016 |
Mengle KA, Shi G, Bayerl D, Kioupakis E. First-principles calculations of the near-edge optical properties of β-Ga2O3 Applied Physics Letters. 109: 212104. DOI: 10.1063/1.4968822 |
0.466 |
|
2015 |
Chung K, McAllister A, Bilby D, Kim BG, Kwon MS, Kioupakis E, Kim J. Designing interchain and intrachain properties of conjugated polymers for latent optical information encoding. Chemical Science. 6: 6980-6985. PMID 29861936 DOI: 10.1039/C5Sc02403J |
0.301 |
|
2015 |
Shi G, Kioupakis E. Anisotropic spin transport and strong visible-light absorbance in few-layer SnSe and GeSe. Nano Letters. PMID 26393677 DOI: 10.1021/Acs.Nanolett.5B02861 |
0.369 |
|
2015 |
Olvera A, Shi G, Djieutedjeu H, Page A, Uher C, Kioupakis E, Poudeu PF. Pb7Bi4Se13: a lillianite homologue with promising thermoelectric properties. Inorganic Chemistry. 54: 746-55. PMID 25089857 DOI: 10.1021/Ic501327U |
0.353 |
|
2015 |
Rondinelli JM, Kioupakis E. Predicting and Designing Optical Properties of Inorganic Materials Annual Review of Materials Research. 45: 491-518. DOI: 10.1146/Annurev-Matsci-070214-021150 |
0.335 |
|
2015 |
Peelaers H, Kioupakis E, Walle CGVd. Free-carrier absorption in transparent conducting oxides: Phonon and impurity scattering in SnO 2 Physical Review B. 92: 235201. DOI: 10.1103/Physrevb.92.235201 |
0.397 |
|
2015 |
Kioupakis E, Steiauf D, Rinke P, Delaney KT, Van de Walle CG. First-principles calculations of indirect Auger recombination in nitride semiconductors Physical Review B. 92. DOI: 10.1103/Physrevb.92.035207 |
0.449 |
|
2015 |
Toulouse AS, Isaacoff BP, Shi G, Matuchová M, Kioupakis E, Merlin R. Frenkel-like Wannier-Mott excitons in few-layer Pb I2 Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.165308 |
0.423 |
|
2015 |
McAllister A, Åberg D, Schleife A, Kioupakis E. Auger Recombination in Sodium-Iodide scintillators From First Principles Applied Physics Letters. 106: 141901. DOI: 10.1063/1.4914500 |
0.388 |
|
2015 |
Shi G, Kioupakis E. Quasiparticle band structures and thermoelectric transport properties of p-type SnSe Journal of Applied Physics. 117: 65103. DOI: 10.1063/1.4907805 |
0.451 |
|
2015 |
Shi G, Kioupakis E. Electronic and Optical Properties of Nanoporous Silicon for Solar-Cell Applications Acs Photonics. 2: 208-215. DOI: 10.1021/Ph5002999 |
0.415 |
|
2015 |
Jokisaari JR, Bayerl D, Zhang K, Xie L, Nie Y, Schlom DG, Kioupakis E, Graham GW, Pan X. Polarization-Dependent Raman Spectroscopy of Epitaxial TiO2(B) Thin Films Chemistry of Materials. 27: 7896-7902. DOI: 10.1021/Acs.Chemmater.5B02806 |
0.369 |
|
2014 |
Bayerl D, Kioupakis E. Visible-wavelength polarized-light emission with small-diameter InN nanowires. Nano Letters. 14: 3709-3714. PMID 24527880 DOI: 10.1021/Nl404414R |
0.476 |
|
2014 |
Bayerl D, Kioupakis E. Indium nitride nanowires for efficient light emitters Spie Newsroom. DOI: 10.1117/2.1201406.005512 |
0.332 |
|
2014 |
Yan Q, Kioupakis E, Jena D, Van De Walle CG. First-principles study of high-field-related electronic behavior of group-III nitrides Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.121201 |
0.692 |
|
2014 |
Chi H, Kim H, Thomas JC, Shi G, Sun K, Abeykoon M, Bozin ES, Shi X, Li Q, Kioupakis E, Van Der Ven A, Kaviany M, Uher C. Low-temperature structural and transport anomalies in Cu2 Se Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.195209 |
0.34 |
|
2014 |
Lee J, Lu W, Kioupakis E. Electronic properties of tantalum pentoxide polymorphs from first-principles calculations Applied Physics Letters. 105: 202108. DOI: 10.1063/1.4901939 |
0.471 |
|
2014 |
Steiauf D, Kioupakis E, Walle CGVd. Auger Recombination in GaAs from First Principles Acs Photonics. 1: 643-646. DOI: 10.1021/Ph500119Q |
0.397 |
|
2013 |
Kioupakis E, Yan Q, Steiauf D, Walle CGVd. Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices New Journal of Physics. 15: 125006. DOI: 10.1088/1367-2630/15/12/125006 |
0.691 |
|
2013 |
Emly A, Kioupakis E, Van Der Ven A. Phase stability and transport mechanisms in antiperovskite Li 3OCl and Li3OBr superionic conductors Chemistry of Materials. 25: 4663-4670. DOI: 10.1021/Cm4016222 |
0.317 |
|
2012 |
Noffsinger J, Kioupakis E, Van de Walle CG, Louie SG, Cohen ML. Phonon-assisted optical absorption in silicon from first principles. Physical Review Letters. 108: 167402. PMID 22680754 DOI: 10.1103/Physrevlett.108.167402 |
0.741 |
|
2012 |
Rinke P, Schleife A, Kioupakis E, Janotti A, Rödl C, Bechstedt F, Scheffler M, Van de Walle CG. First-principles optical spectra for F centers in MgO. Physical Review Letters. 108: 126404. PMID 22540604 DOI: 10.1103/Physrevlett.108.126404 |
0.69 |
|
2012 |
Yazyev OV, Kioupakis E, Moore JE, Louie SG. Quasiparticle effects in the bulk and surface-state bands of Bi 2Se 3 and Bi 2Te 3 topological insulators Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.161101 |
0.527 |
|
2012 |
Kioupakis E, Yan Q, Walle CGVd. Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes Applied Physics Letters. 101: 231107. DOI: 10.1063/1.4769374 |
0.673 |
|
2012 |
Peelaers H, Kioupakis E, Walle CGVd. Fundamental limits on optical transparency of transparent conducting oxides: Free-carrier absorption in SnO2 Applied Physics Letters. 100: 11914. DOI: 10.1063/1.3671162 |
0.408 |
|
2011 |
Kioupakis E, Rinke P, Delaney KT, Van de Walle CG. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes Applied Physics Letters. 98: 161107. DOI: 10.1063/1.3570656 |
0.427 |
|
2010 |
Kioupakis E, Rinke P, Van de Walle CG. Determination of Internal Loss in Nitride Lasers from First Principles Applied Physics Express. 3: 082101. DOI: 10.1143/Apex.3.082101 |
0.335 |
|
2010 |
Kioupakis E, Tiago ML, Louie SG. Quasiparticle electronic structure of bismuth telluride in the GW approximation Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.245203 |
0.716 |
|
2010 |
Kioupakis E, Rinke P, Schleife A, Bechstedt F, Walle CGVd. Free-carrier absorption in nitrides from first principles Physical Review B. 81: 241201. DOI: 10.1103/Physrevb.81.241201 |
0.469 |
|
2008 |
Wang Y, Kioupakis E, Lu X, Wegner D, Yamachika R, Dahl JE, Carlson RM, Louie SG, Crommie MF. Spatially resolved electronic and vibronic properties of single diamondoid molecules. Nature Materials. 7: 38-42. PMID 18037893 DOI: 10.1038/Nmat2066 |
0.522 |
|
2008 |
Kioupakis E, Zhang P, Cohen ML, Louie SG. GW quasiparticle corrections to the LDA+U GGA+U electronic structure of bcc hydrogen Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.155114 |
0.6 |
|
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