Hailing Bao, Ph.D. - Publications
Affiliations: | 2005 | Cornell University, Ithaca, NY, United States |
Area:
surface chemistry at the atomic scale using scanned probe microscopyYear | Citation | Score | |||
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2004 | Garcia SP, Bao H, Hines MA. Etchant anisotropy controls the step bunching instability in KOH etching of silicon. Physical Review Letters. 93: 166102. PMID 15525007 DOI: 10.1103/Physrevlett.93.166102 | 0.644 | |||
2004 | Garcia SP, Bao H, Hines MA. Effects of diffusional processes on crystal etching: Kinematic theory extended to two dimensions Journal of Physical Chemistry B. 108: 6062-6071. DOI: 10.1021/Jp036856I | 0.61 | |||
2003 | Garcia SP, Bao H, Hines MA. Understanding the pH dependence of silicon etching: The importance of dissolved oxygen in buffered HF etchants Surface Science. 541: 252-261. DOI: 10.1016/S0039-6028(03)00952-X | 0.642 | |||
2002 | Garcia SP, Bao H, Manimaran M, Hines MA. Measuring the site-specific reactivity of impurities: The pronounced effect of dissolved oxygen on silicon etching Journal of Physical Chemistry B. 106: 8258-8264. DOI: 10.1021/Jp0207073 | 0.648 | |||
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