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Shriram Ramanathan, Ph.D. - Publications

Affiliations: 
2006 University of Minnesota, Twin Cities, Minneapolis, MN 
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221 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Bohaichuk SM, Pelella MM, Sun Y, Zhang Z, Ramanathan S, Pop E. VO2 Switch for Electrostatic Discharge Protection Ieee Electron Device Letters. 41: 292-295. DOI: 10.1109/Led.2019.2963046  0.369
2020 Zhang H, Panda P, Lin J, Kalcheim Y, Wang K, Freeland JW, Fong DD, Priya S, Schuller IK, Sankaranarayanan SKRS, Roy K, Ramanathan S. Organismic materials for beyond von Neumann machines Applied Physics Reviews. 7: 011309. DOI: 10.1063/1.5113574  0.316
2019 Shahsafi A, Roney P, Zhou Y, Zhang Z, Xiao Y, Wan C, Wambold R, Salman J, Yu Z, Li J, Sadowski JT, Comin R, Ramanathan S, Kats MA. Temperature-independent thermal radiation. Proceedings of the National Academy of Sciences of the United States of America. PMID 31848248 DOI: 10.1073/Pnas.1911244116  0.348
2019 Kotiuga M, Zhang Z, Li J, Rodolakis F, Zhou H, Sutarto R, He F, Wang Q, Sun Y, Wang Y, Aghamiri NA, Hancock SB, Rokhinson LP, Landau DP, Abate Y, ... ... Ramanathan S, et al. Carrier localization in perovskite nickelates from oxygen vacancies. Proceedings of the National Academy of Sciences of the United States of America. PMID 31611403 DOI: 10.1073/Pnas.1910490116  0.371
2019 Huang C, Zhang Z, Ramanathan S, Weinstein D. VO 2 Phase-Transition-Based Vertical MEMS Microactuators Ieee Transactions On Electron Devices. 66: 4380-4386. DOI: 10.1109/Ted.2019.2937683  0.385
2019 Wan C, Zhang Z, Woolf D, Hessel CM, Rensberg J, Hensley JM, Xiao Y, Shahsafi A, Salman J, Richter S, Sun Y, Qazilbash MM, Schmidt‐Grund R, Ronning C, Ramanathan S, et al. On the Optical Properties of Thin‐Film Vanadium Dioxide from the Visible to the Far Infrared Annalen Der Physik. 531: 1900188. DOI: 10.1002/Andp.201900188  0.339
2018 Sun Y, Kotiuga M, Lim D, Narayanan B, Cherukara M, Zhang Z, Dong Y, Kou R, Sun CJ, Lu Q, Waluyo I, Hunt A, Tanaka H, Hattori AN, Gamage S, ... ... Ramanathan S, et al. Strongly correlated perovskite lithium ion shuttles. Proceedings of the National Academy of Sciences of the United States of America. PMID 30104357 DOI: 10.1073/Pnas.1805029115  0.309
2018 Lin J, Ramanathan S, Guha S. Electrically Driven Insulator–Metal Transition-Based Devices—Part II: Transient Characteristics Ieee Transactions On Electron Devices. 65: 3989-3995. DOI: 10.1109/Ted.2018.2859188  0.306
2018 Lin J, Ramanathan S, Guha S. Electrically Driven Insulator–Metal Transition-Based Devices—Part I: The Electrothermal Model and Experimental Analysis for the DC Characteristics Ieee Transactions On Electron Devices. 65: 3982-3988. DOI: 10.1109/Ted.2018.2859180  0.338
2018 Karda K, Mouli C, Ramanathan S, Alam MA. A Self-Consistent, Semiclassical Electrothermal Modeling Framework for Mott Devices Ieee Transactions On Electron Devices. 65: 1672-1678. DOI: 10.1109/Ted.2018.2817604  0.37
2018 Ramadoss K, Zuo F, Sun Y, Zhang Z, Lin J, Bhaskar U, Shin S, Alam MA, Guha S, Weinstein D, Ramanathan S. Proton-Doped Strongly Correlated Perovskite Nickelate Memory Devices Ieee Electron Device Letters. 39: 1500-1503. DOI: 10.1109/Led.2018.2865776  0.332
2018 Bierman DM, Lenert A, Kats MA, Zhou Y, Zhang S, De La Ossa M, Ramanathan S, Capasso F, Wang EN. Radiative Thermal Runaway Due to Negative-Differential Thermal Emission Across a Solid-Solid Phase Transition Physical Review Applied. 10. DOI: 10.1103/Physrevapplied.10.021001  0.311
2018 Sun Y, Narayanachari KVLV, Wan C, Sun X, Wang H, Cooley KA, Mohney SE, White D, Duwel A, Kats MA, Ramanathan S. Thermally tunable VO2-SiO2 nanocomposite thin-film capacitors Journal of Applied Physics. 123: 114103. DOI: 10.1063/1.5011641  0.446
2018 Wan C, Horak EH, King J, Salman J, Zhang Z, Zhou Y, Roney P, Gundlach B, Ramanathan S, Goldsmith RH, Kats MA. Limiting Optical Diodes Enabled by the Phase Transition of Vanadium Dioxide Acs Photonics. 5: 2688-2692. DOI: 10.1021/Acsphotonics.8B00313  0.386
2018 Jiang J, Lim DG, Ramadoss K, Ramanathan S. Ionic conduction and unipolar resistance switching in δ-phase Bi2O3 thin films Solid-State Electronics. 146: 13-20. DOI: 10.1016/J.Sse.2018.04.009  0.432
2017 Zhang Z, Schwanz D, Narayanan B, Kotiuga M, Dura JA, Cherukara M, Zhou H, Freeland JW, Li J, Sutarto R, He F, Wu C, Zhu J, Sun Y, Ramadoss K, ... ... Ramanathan S, et al. Perovskite nickelates as electric-field sensors in salt water. Nature. PMID 29258293 DOI: 10.1038/Nature25008  0.319
2017 Ramanathan S. Condensed-matter physics: Functional materials at the flick of a switch. Nature. 546: 40-41. PMID 28569810 DOI: 10.1038/546040A  0.312
2017 Wan C, Horak EH, Zhou Y, Zhang Z, Salman J, Roney P, Rensberg J, Gundlach B, Ramanathan S, Goldsmith RH, Ronning C, Kats MA. Optical power diodes based on phase-transition materials (Conference Presentation) Proceedings of Spie. 10105. DOI: 10.1117/12.2253143  0.394
2017 Rensberg J, Zhou Y, Richter S, Wan C, Zhang S, Schöppe P, Schmidt-Grund R, Ramanathan S, Capasso F, Kats MA, Ronning C. Epsilon-Near-Zero Substrate Engineering for Ultrathin-Film Perfect Absorbers Physical Review Applied. 8. DOI: 10.1103/Physrevapplied.8.014009  0.388
2017 Fong DD, Ramanathan S. Preface for Special Topic: Ionotronics Apl Materials. 5: 042201. DOI: 10.1063/1.4982238  0.367
2017 Raj R, Ramanathan S. Flash transition as a possible origin for low open circuit voltage in thin film solid oxide fuel cells Journal of Power Sources. 359: 48-51. DOI: 10.1016/J.Jpowsour.2017.05.053  0.488
2016 Li Z, Zhou Y, Qi H, Pan Q, Zhang Z, Shi NN, Lu M, Stein A, Li CY, Ramanathan S, Yu N. Correlated Perovskites as a New Platform for Super-Broadband-Tunable Photonics. Advanced Materials (Deerfield Beach, Fla.). PMID 27573540 DOI: 10.1002/Adma.201601204  0.376
2016 Zhou Y, Guan X, Zhou H, Ramadoss K, Adam S, Liu H, Lee S, Shi J, Tsuchiya M, Fong DD, Ramanathan S. Strongly correlated perovskite fuel cells. Nature. 534: 231-4. PMID 27279218 DOI: 10.1038/Nature17653  0.379
2016 Jiang J, Guan X, Lattimer J, Friend C, Verma A, Tsuchiya M, Ramanathan S. Experimental investigation into tungsten carbide thin films as solid oxide fuel cell anodes Journal of Materials Research. 1-10. DOI: 10.1557/Jmr.2016.312  0.394
2016 Lee S, Guan X, Ramanathan S. Thin Film Oxy-Apatite Anodes for Solid Oxide Fuel Cells Journal of the Electrochemical Society. 163. DOI: 10.1149/2.1361607Jes  0.435
2016 Ramadoss K, Mandal N, Dai X, Wan Z, Zhou Y, Rokhinson L, Chen YP, Hu J, Ramanathan S. Sign reversal of magnetoresistance in a perovskite nickelate by electron doping Physical Review B. 94: 235124. DOI: 10.1103/Physrevb.94.235124  0.306
2016 Jaramillo R, Youssef A, Akey A, Schoofs F, Ramanathan S, Buonassisi T. Using Atom-Probe Tomography to UnderstandZnO∶Al/SiO2/SiSchottky Diodes Physical Review Applied. 6. DOI: 10.1103/Physrevapplied.6.034016  0.378
2016 Guan X, Jiang J, Lattimer J, Tsuchiya M, Friend CM, Ramanathan S. Hydride-Based Solid Oxide Fuel Cell-Battery Hybrid Electrochemical System Energy Technology. 5: 616-622. DOI: 10.1002/Ente.201600406  0.306
2015 Rensberg J, Zhang S, Zhou Y, McLeod AS, Schwarz C, Goldflam M, Liu M, Kerbusch J, Nawrodt R, Ramanathan S, Basov DN, Capasso F, Ronning C, Kats M. Active optical metasurfaces based on defect-engineered phase-transition materials. Nano Letters. PMID 26690855 DOI: 10.1021/Acs.Nanolett.5B04122  0.339
2015 Zhou Y, Park J, Shi J, Chhowalla M, Park H, Weitz DA, Ramanathan S. Control of emergent properties at a correlated oxide interface with graphene. Nano Letters. 15: 1627-34. PMID 25654789 DOI: 10.1021/Nl504170D  0.421
2015 Yang Z, Ramanathan S. Breakthroughs in photonics 2014: Phase change materials for photonics Ieee Photonics Journal. 7. DOI: 10.1109/Jphot.2015.2413594  0.333
2015 Savo S, Zhou Y, Castaldi G, Moccia M, Galdi V, Ramanathan S, Sato Y. Reconfigurable anisotropy and functional transformations with VO2 -based metamaterial electric circuits Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.134105  0.367
2015 Chen J, Zhou Y, Middey S, Jiang J, Chen N, Chen L, Shi X, Döbeli M, Shi J, Chakhalian J, Ramanathan S. Self-limited kinetics of electron doping in correlated oxides Applied Physics Letters. 107. DOI: 10.1063/1.4927322  0.398
2015 Narayanan B, Deshmukh SA, Sankaranarayanan SKRS, Ramanathan S. Strong correlations between structural order and passive state at water-copper oxide interfaces Electrochimica Acta. DOI: 10.1016/J.Electacta.2015.03.221  0.429
2015 Kerman K, Xuza S, Ramanathan S. Free standing yttria-doped zirconia membranes: Geometrical effects on stability Journal of Electroceramics. 34: 91-99. DOI: 10.1007/S10832-014-9917-1  0.366
2014 Shi J, Zhou Y, Ramanathan S. Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping. Nature Communications. 5: 4860. PMID 25181992 DOI: 10.1038/Ncomms5860  0.403
2014 Kerman K, Ramanathan S. Complex oxide nanomembranes for energy conversion and storage: A review Journal of Materials Research. 29: 320-337. DOI: 10.1557/Jmr.2013.301  0.347
2014 Kats MA, Blanchard R, Ramanathan S, Capasso F. Thin-film interference in lossy, ultra-thin layers Optics and Photonics News. 25: 40-47. DOI: 10.1364/Opn.25.1.000040  0.343
2014 Wong FJ, Ramanathan S. Synthesis of epitaxial rutile-type VO2 and VO2(B) polymorph films Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2044055  0.481
2014 Wong FJ, Ramanathan S. Nonisostructural complex oxide heteroepitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4879695  0.442
2014 Ha SD, Zhou Y, Duwel AE, White DW, Ramanathan S. Quick switch: Strongly correlated electronic phase transition systems for cutting-edge microwave devices Ieee Microwave Magazine. 15: 32-44. DOI: 10.1109/Mmm.2014.2332422  0.375
2014 Ha SD, Zhou Y, Fisher CJ, Ramanathan S, Treadway JP. Abrupt insertion loss drop by RF-Triggering of the phase transition in VO2 CPW switches Ieee Microwave and Wireless Components Letters. 24: 575-577. DOI: 10.1109/Lmwc.2014.2323703  0.303
2014 Kats MA, Blanchard R, Zhang S, Genevet P, Ko C, Ramanathan S, Capasso F. Vanadium dioxide as a natural disordered metamaterial: Perfect thermal emission and large broadband negative differential thermal emittance Physical Review X. 3. DOI: 10.1103/Physrevx.3.041004  0.327
2014 Sahoo A, Ha SD, Ramanathan S, Ghosh A. Conductivity noise study of the insulator-metal transition and phase coexistence in epitaxial samarium nickelate thin films Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.085116  0.411
2014 Zhang S, Kats MA, Cui Y, Zhou Y, Yao Y, Ramanathan S, Capasso F. Current-modulated optical properties of vanadium dioxide thin films in the phase transition region Applied Physics Letters. 105. DOI: 10.1063/1.4902924  0.72
2014 Stevanović V, Hartman K, Jaramillo R, Ramanathan S, Buonassisi T, Graf P. Variations of ionization potential and electron affinity as a function of surface orientation: The case of orthorhombic SnS Applied Physics Letters. 104. DOI: 10.1063/1.4879558  0.384
2014 Krishnamoorthy HNS, Zhou Y, Ramanathan S, Narimanov E, Menon VM. Tunable hyperbolic metamaterials utilizing phase change heterostructures Applied Physics Letters. 104. DOI: 10.1063/1.4869297  0.373
2014 Yan F, Schoofs F, Shi J, Ha SD, Jaramillo R, Ramanathan S. Local charge writing in epitaxial SmNiO3 thin films Journal of Materials Chemistry C. 2: 3805-3811. DOI: 10.1039/C4Tc00030G  0.441
2014 Sim JS, Shi J, Ramanathan S. Ultra-thin freestanding ceria membranes: Layer transfer techniques and high temperature conductivity studies Journal of Materials Chemistry A. 2: 19019-19028. DOI: 10.1039/C4Ta02113D  0.406
2014 Jaramillo R, Ha SD, Silevitch DM, Ramanathan S. Origins of bad-metal conductivity and the insulator-metal transition in the rare-earth nickelates Nature Physics. 10: 304-307. DOI: 10.1038/Nphys2907  0.342
2014 Van Overmeere Q, Ramanathan S. Thin film fuel cells with vanadium oxide anodes: Strain and stoichiometry effects Electrochimica Acta. 150: 83-88. DOI: 10.1016/J.Electacta.2014.10.152  0.41
2013 Deshmukh S, Kamath G, Ramanathan S, Sankaranarayanan SK. Chloride ions induce order-disorder transition at water-oxide interfaces. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 88: 062119. PMID 24483398 DOI: 10.1103/Physreve.88.062119  0.306
2013 Kerman K, Van Overmeere Q, Karpelson M, Wood RJ, Ramanathan S. Monolithic integration of nanoscale solid oxide fuel cell membranes onto polymer scaffolds through stress control. Acs Nano. 7: 10895-903. PMID 24256508 DOI: 10.1021/Nn404401C  0.361
2013 Shi J, Ha SD, Zhou Y, Schoofs F, Ramanathan S. A correlated nickelate synaptic transistor. Nature Communications. 4: 2676. PMID 24177330 DOI: 10.1038/Ncomms3676  0.379
2013 Viswanath B, Ramanathan S. Direct in situ observation of structural transition driven actuation in VO2 utilizing electron transparent cantilevers. Nanoscale. 5: 7484-92. PMID 23832192 DOI: 10.1039/C3Nr02210B  0.365
2013 Kats MA, Blanchard R, Genevet P, Yang Z, Qazilbash MM, Basov DN, Ramanathan S, Capasso F. Thermal tuning of mid-infrared plasmonic antenna arrays using a phase change material. Optics Letters. 38: 368-70. PMID 23381440 DOI: 10.1364/Ol.38.000368  0.393
2013 Jeon B, Van Overmeere Q, van Duin AC, Ramanathan S. Nanoscale oxidation and complex oxide growth on single crystal iron surfaces and external electric field effects. Physical Chemistry Chemical Physics : Pccp. 15: 1821-30. PMID 23247653 DOI: 10.1039/C2Cp43490C  0.364
2013 Wong FJ, Ramanathan S. Heteroepitaxy of distorted rutile-structure WO2 and NbO 2 thin films Journal of Materials Research. 28: 2555-2563. DOI: 10.1557/Jmr.2013.247  0.394
2013 Podpirka A, Balakrishnan V, Ramanathan S. Heteroepitaxy and crystallographic orientation transition in La 1.875Sr0.125NiO4 thin films on single crystal SrTiO3 Journal of Materials Research. 28: 1420-1431. DOI: 10.1557/Jmr.2013.121  0.396
2013 Zhou Y, Chen X, Ko C, Yang Z, Mouli C, Ramanathan S. Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches Ieee Electron Device Letters. 34: 220-222. DOI: 10.1109/Led.2012.2229457  0.394
2013 Ha SD, Jaramillo R, Silevitch DM, Schoofs F, Kerman K, Baniecki JD, Ramanathan S. Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.125150  0.449
2013 Subbaraman R, Sankaranarayanan SKRS, Ramanathan S. Electric field assisted annealing effects on microstructure and ionic conductivity in ceria/YSZ oxide heterostructures Philosophical Magazine. 93: 1802-1826. DOI: 10.1080/14786435.2012.758391  0.376
2013 Zhou Y, Ramanathan S. Correlated electron materials and field effect transistors for logic: A review Critical Reviews in Solid State and Materials Sciences. 38: 286-317. DOI: 10.1080/10408436.2012.719131  0.382
2013 Kerman K, Ramanathan S, Baniecki JD, Ishii M, Kotaka Y, Aso H, Kurihara K, Schafranek R, Vailionis A. Thermopower in quantum confined La-doped SrTiO3 epitaxial heterostructures Applied Physics Letters. 103. DOI: 10.1063/1.4826098  0.421
2013 Zhou Y, Ramanathan S. GaN/VO2 heteroepitaxial p-n junctions: Band offset and minority carrier dynamics Journal of Applied Physics. 113. DOI: 10.1063/1.4807922  0.358
2013 Ha SD, Vetter U, Shi J, Ramanathan S. Electrostatic gating of metallic and insulating phases in SmNiO3 ultrathin films Applied Physics Letters. 102. DOI: 10.1063/1.4804142  0.426
2013 Ha SD, Zhou Y, Fisher CJ, Ramanathan S, Treadway JP. Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices Journal of Applied Physics. 113. DOI: 10.1063/1.4803688  0.373
2013 Hyeon Lee S, Kim M, Ha SD, Lee JW, Ramanathan S, Tiwari S. Space charge polarization induced memory in SmNiO3/Si transistors Applied Physics Letters. 102. DOI: 10.1063/1.4790394  0.379
2013 Jaramillo R, Schoofs F, Ha SD, Ramanathan S. High pressure synthesis of SmNiO3 thin films and implications for thermodynamics of the nickelates Journal of Materials Chemistry C. 1: 2455-2462. DOI: 10.1039/C3Tc00844D  0.481
2013 Wong FJ, Sriram TS, Smith BR, Ramanathan S. Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices Solid-State Electronics. 87: 21-26. DOI: 10.1016/J.Sse.2013.04.032  0.433
2013 Takagi Y, Kerman K, Ko C, Ramanathan S. Operational characteristics of thin film solid oxide fuel cells with ruthenium anode in natural gas Journal of Power Sources. 243: 1-9. DOI: 10.1016/J.Jpowsour.2013.06.002  0.392
2013 Kerman K, Tallinen T, Ramanathan S, Mahadevan L. Elastic configurations of self-supported oxide membranes for fuel cells Journal of Power Sources. 222: 359-366. DOI: 10.1016/J.Jpowsour.2012.08.092  0.375
2013 Wong FJ, Zhou Y, Ramanathan S. Epitaxial variants of VO2 thin films on complex oxide single crystal substrates with 3m surface symmetry Journal of Crystal Growth. 364: 74-80. DOI: 10.1016/J.Jcrysgro.2012.11.054  0.444
2012 Sim JS, Zhou Y, Ramanathan S. Suspended sub-50 nm vanadium dioxide membrane transistors: fabrication and ionic liquid gating studies. Nanoscale. 4: 7056-62. PMID 23051929 DOI: 10.1039/C2Nr32049E  0.433
2012 Kerman K, Ko C, Ramanathan S. Orientation dependent oxygen exchange kinetics on single crystal SrTiO3 surfaces. Physical Chemistry Chemical Physics : Pccp. 14: 11953-60. PMID 22850487 DOI: 10.1039/C2Cp41918A  0.33
2012 Van Overmeere Q, Kerman K, Ramanathan S. Energy storage in ultrathin solid oxide fuel cells. Nano Letters. 12: 3756-60. PMID 22712483 DOI: 10.1021/Nl301601Y  0.379
2012 Jeon B, Sankaranarayanan SK, van Duin AC, Ramanathan S. Reactive molecular dynamics study of chloride ion interaction with copper oxide surfaces in aqueous media. Acs Applied Materials & Interfaces. 4: 1225-32. PMID 22373345 DOI: 10.1021/Am201345V  0.354
2012 Sankaranarayanan SK, Subbaraman R, Ramanathan S. Considerations on ultra-high frequency electric field effects on oxygen vacancy concentration in oxide thin films. Physical Chemistry Chemical Physics : Pccp. 14: 3360-8. PMID 22297437 DOI: 10.1039/C2Cp22696K  0.392
2012 Balakrishnan V, Ko C, Ramanathan S. In situ studies on twinning and cracking proximal to insulator-metal transition in self-supported VO 2 /Si 3N 4 membranes Journal of Materials Research. 27: 1476-1481. DOI: 10.1557/Jmr.2012.93  0.369
2012 Podpirka A, Ramanathan S. Heteroepitaxial La 2-xSr xNiO 4-Nb-doped SrTiO 3 junctions: Synthesis and rectification characteristics Journal of the Electrochemical Society. 159. DOI: 10.1149/2.004202Jes  0.433
2012 Abazari M, Sim JS, Viswanath B, Ramanathan S. Fabrication and physical properties of thin TixOy membranes from single crystal TiO2 Journal of Vacuum Science and Technology. 30: 21601. DOI: 10.1116/1.3676197  0.378
2012 Ko C, Zhou Y, Ramanathan S. Probing compositional disorder in vanadium oxide thin films grown on atomic layer deposited hafnia on silicon by capacitance spectroscopy Journal of Vacuum Science and Technology. 30: 11501. DOI: 10.1116/1.3659020  0.511
2012 Abazari M, Tsuchiya M, Ramanathan S. High‐Temperature Electrical Conductivity Measurements on Nanostructured Yttria‐Doped Ceria Thin Films in Ozone Journal of the American Ceramic Society. 95: 312-317. DOI: 10.1111/J.1551-2916.2011.04786.X  0.444
2012 Zhou Y, Yang Z, Ramanathan S. Multi-Resistance States Through Electrically Driven Phase Transitions in $\hbox{VO}_{2}/\hbox{HfO}_{2}/\hbox{VO}_{2}$ Heterostructures on Silicon Ieee Electron Device Letters. 33: 101-103. DOI: 10.1109/Led.2011.2173790  0.391
2012 Podpirka A, Tselev A, Ramanathan S. Synthesis and frequency-dependent dielectric properties of epitaxial La1.875Sr0.125NiO4 thin films Journal of Physics D. 45: 305302. DOI: 10.1088/0022-3727/45/30/305302  0.427
2012 Kats MA, Sharma D, Lin J, Genevet P, Blanchard R, Yang Z, Qazilbash MM, Basov DN, Ramanathan S, Capasso F. Ultra-thin perfect absorber employing a tunable phase change material Applied Physics Letters. 101. DOI: 10.1063/1.4767646  0.378
2012 Sohn A, Kim H, Kim D, Ko C, Ramanathan S, Park J, Seo G, Kim B, Shin J, Kim H. Evolution of local work function in epitaxial VO2 thin films spanning the metal-insulator transition Applied Physics Letters. 101: 191605. DOI: 10.1063/1.4766292  0.431
2012 Zhou Y, Ramanathan S. Heteroepitaxial VO 2 thin films on GaN: Structure and metal-insulator transition characteristics Journal of Applied Physics. 112. DOI: 10.1063/1.4758185  0.523
2012 Ha SD, Viswanath B, Ramanathan S. Electrothermal actuation of metal-insulator transition in SmNiO 3 thin film devices above room temperature Journal of Applied Physics. 111. DOI: 10.1063/1.4729490  0.483
2012 Zhou Y, Ramanathan S. Relaxation dynamics of ionic liquid-VO 2 interfaces and influence in electric double-layer transistors Journal of Applied Physics. 111. DOI: 10.1063/1.4704689  0.394
2012 Yang Z, Zhou Y, Ramanathan S. Studies on room-temperature electric-field effect in ionic-liquid gated VO 2 three-terminal devices Journal of Applied Physics. 111: 14506. DOI: 10.1063/1.3665399  0.424
2012 Jeon B, Ko C, Duin ACTv, Ramanathan S. Chemical stability and surface stoichiometry of vanadium oxide phases studied by reactive molecular dynamics simulations Surface Science. 606: 516-522. DOI: 10.1016/J.Susc.2011.11.021  0.383
2012 Viswanath B, Aydogdu GH, Ha SD, Ramanathan S. In situ stress relaxation and diffraction studies across the metal-insulator transition in epitaxial and polycrystalline SmNiO 3 thin films Scripta Materialia. 66: 463-466. DOI: 10.1016/J.Scriptamat.2011.12.018  0.462
2012 Ha SD, Otaki M, Jaramillo R, Podpirka A, Ramanathan S. Stable metal-insulator transition in epitaxial SmNiO 3 thin films Journal of Solid State Chemistry. 190: 233-237. DOI: 10.1016/J.Jssc.2012.02.047  0.464
2012 Takagi Y, Adam S, Ramanathan S. Nanostructured ruthenium – gadolinia-doped ceria composite anodes for thin film solid oxide fuel cells Journal of Power Sources. 217: 543-553. DOI: 10.1016/J.Jpowsour.2012.06.060  0.497
2012 Ko C, Kerman K, Ramanathan S. Ultra-thin film solid oxide fuel cells utilizing un-doped nanostructured zirconia electrolytes Journal of Power Sources. 213: 343-349. DOI: 10.1016/J.Jpowsour.2012.04.034  0.486
2012 Kerman K, Lai B, Ramanathan S. Free standing oxide alloy electrolytes for low temperature thin film solid oxide fuel cells Journal of Power Sources. 202: 120-125. DOI: 10.1016/J.Jpowsour.2011.11.062  0.43
2012 Cui Y, Wang X, Zhou Y, Gordon R, Ramanathan S. Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics Journal of Crystal Growth. 338: 96-102. DOI: 10.1016/J.Jcrysgro.2011.10.025  0.755
2012 Kerman K, Lai B, Ramanathan S. Nanoscale Compositionally Graded Thin‐Film Electrolyte Membranes for Low‐Temperature Solid Oxide Fuel Cells (Adv. Energy Mater. 6/2012) Advanced Energy Materials. 2: 655-655. DOI: 10.1002/Aenm.201290029  0.303
2012 Kerman K, Lai B, Ramanathan S. Nanoscale Compositionally Graded Thin‐Film Electrolyte Membranes for Low‐Temperature Solid Oxide Fuel Cells Advanced Energy Materials. 2: 656-661. DOI: 10.1002/Aenm.201100751  0.306
2011 Likovich EM, Jaramillo R, Russell KJ, Ramanathan S, Narayanamurti V. High-current-density monolayer CdSe/ZnS quantum dot light-emitting devices with oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 23: 4521-5. PMID 21901762 DOI: 10.1002/Adma.201101782  0.343
2011 Ko C, Yang Z, Ramanathan S. Work function of vanadium dioxide thin films across the metal-insulator transition and the role of surface nonstoichiometry. Acs Applied Materials & Interfaces. 3: 3396-401. PMID 21827179 DOI: 10.1021/Am2006299  0.499
2011 Mandal P, Speck A, Ko C, Ramanathan S. Terahertz spectroscopy studies on epitaxial vanadium dioxide thin films across the metal-insulator transition. Optics Letters. 36: 1927-9. PMID 21593938 DOI: 10.1364/Ol.36.001927  0.484
2011 Tsuchiya M, Lai BK, Ramanathan S. Scalable nanostructured membranes for solid-oxide fuel cells. Nature Nanotechnology. 6: 282-6. PMID 21460827 DOI: 10.1038/Nnano.2011.43  0.343
2011 Sankaranarayanan SK, Ramanathan S. Interface proximity effects on ionic conductivity in nanoscale oxide-ion conducting yttria stabilized zirconia: an atomistic simulation study. The Journal of Chemical Physics. 134: 064703. PMID 21322717 DOI: 10.1063/1.3549891  0.473
2011 Ko C, Karthikeyan A, Ramanathan S. Studies on oxygen chemical surface exchange and electrical conduction in thin film nanostructured titania at high temperatures and varying oxygen pressure. The Journal of Chemical Physics. 134: 014704. PMID 21219017 DOI: 10.1063/1.3524341  0.385
2011 Balakrishnan V, Ko C, Ramanathan S. Size effects on stress relaxation across the metal-insulator transition in VO2 thin films Journal of Materials Research. 26: 1384-1387. DOI: 10.1557/Jmr.2011.134  0.404
2011 Yang Z, Ko C, Ramanathan S. Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions Annual Review of Materials Research. 41: 337-367. DOI: 10.1146/Annurev-Matsci-062910-100347  0.413
2011 Cui Y, Ramanathan S. Substrate effects on metal-insulator transition characteristics of rf-sputtered epitaxial VO2 thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3584817  0.752
2011 Seo G, Kim B, Ko C, Cui Y, Lee YW, Shin J, Ramanathan S, Kim H. Voltage-Pulse-Induced Switching Dynamics in $ \hbox{VO}_{2}$ Thin-Film Devices on Silicon Ieee Electron Device Letters. 32: 1582-1584. DOI: 10.1109/Led.2011.2163922  0.422
2011 Likovich EM, Jaramillo R, Russell KJ, Ramanathan S, Narayanamurti V. Scanning tunneling microscope investigation of local density of states in Al-doped ZnO thin films Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.075430  0.417
2011 Viswanath B, Ko C, Ramanathan S. Thickness-dependent orientation evolution in nickel thin films grown on yttria-stabilized zirconia single crystals Philosophical Magazine. 91: 4311-4323. DOI: 10.1080/14786435.2011.608086  0.43
2011 Jeon B, Sankaranarayanan SKRS, Duin ACTv, Ramanathan S. Influence of surface orientation and defects on early-stage oxidation and ultrathin oxide growth on pure copper Philosophical Magazine. 91: 4073-4088. DOI: 10.1080/14786435.2011.598881  0.354
2011 Cole MW, Toonen RC, Hirsch SG, Ivill M, Ngo E, Hubbard C, Ramanathan S, Podpirka A. An elegant post-growth process science protocol to improve the material properties of complex oxide thin films for tunable device applications Integrated Ferroelectrics. 126: 34-46. DOI: 10.1080/10584587.2011.574982  0.414
2011 Ha SD, Aydogdu GH, Ramanathan S. Examination of insulator regime conduction mechanisms in epitaxial and polycrystalline SmNiO3 thin films Journal of Applied Physics. 110: 94102. DOI: 10.1063/1.3658263  0.504
2011 Likovich EM, Jaramillo R, Russell KJ, Ramanathan S, Narayanamurti V. Narrow band defect luminescence from Al-doped ZnO probed by scanning tunneling cathodoluminescence Applied Physics Letters. 99. DOI: 10.1063/1.3647622  0.322
2011 Ha SD, Ramanathan S. Adaptive oxide electronics: A review Journal of Applied Physics. 110. DOI: 10.1063/1.3640806  0.372
2011 Yang Z, Hart S, Ko C, Yacoby A, Ramanathan S. Studies on electric triggering of the metal-insulator transition in VO2thin films between 77 K and 300 K Journal of Applied Physics. 110: 033725. DOI: 10.1063/1.3619806  0.42
2011 Ha SD, Aydogdu GH, Viswanath B, Ramanathan S. Electrically-driven metal-insulator transition with tunable threshold voltage in a VO2-SmNiO3 heterostructure on silicon Journal of Applied Physics. 110: 26110. DOI: 10.1063/1.3610798  0.415
2011 Aydogdu GH, Ha SD, Viswanath B, Ramanathan S. Epitaxy, strain, and composition effects on metal-insulator transition characteristics of SmNiO3 thin films Journal of Applied Physics. 109: 124110. DOI: 10.1063/1.3598055  0.482
2011 Yang Z, Ramanathan S. Direct measurement of compositional complexity-induced electronic inhomogeneity in VO2 thin films grown on gate dielectrics Applied Physics Letters. 98. DOI: 10.1063/1.3590920  0.485
2011 Viswanath CKB, Yang Z, Ramanathan S. Geometric confinement effects on the metal-insulator transition temperature and stress relaxation in VO2 thin films grown on silicon Journal of Applied Physics. 109: 63512. DOI: 10.1063/1.3556756  0.478
2011 Ha SD, Aydogdu GH, Ramanathan S. Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films Applied Physics Letters. 98: 12105. DOI: 10.1063/1.3536486  0.514
2011 Podpirka A, Ramanathan S. Thin film colossal dielectric constant oxide La2−xSrxNiO4: Synthesis, dielectric relaxation measurements, and electrode effects Journal of Applied Physics. 109: 14106. DOI: 10.1063/1.3528161  0.452
2011 Takagi Y, Lai B, Kerman K, Ramanathan S. Low temperature thin film solid oxide fuel cells with nanoporous ruthenium anodes for direct methane operation Energy and Environmental Science. 4: 3473-3478. DOI: 10.1039/C1Ee01310F  0.434
2011 Jeon B, Sankaranarayanan SKRS, Ramanathan S. Atomistic Modeling of Ultrathin Surface Oxide Growth on a Ternary Alloy: Oxidation of Al−Ni−Fe Journal of Physical Chemistry C. 115: 6571-6580. DOI: 10.1021/Jp1106845  0.344
2011 Abazari M, Xue Q, Chang C, Ramanathan S. Influence of interfaces on impedance response and breakdown of oxide–metal multilayer structures Thin Solid Films. 519: 3196-3202. DOI: 10.1016/J.Tsf.2010.12.169  0.4
2011 Zhang Y, Ramanathan S. Analysis of “on” and “off” times for thermally driven VO2 metal-insulator transition nanoscale switching devices Solid-State Electronics. 62: 161-164. DOI: 10.1016/J.Sse.2011.04.003  0.45
2011 Jaramillo R, Ramanathan S. Kelvin force microscopy studies of work function of transparent conducting ZnO:Al electrodes synthesized under varying oxygen pressures Solar Energy Materials and Solar Cells. 95: 602-605. DOI: 10.1016/J.Solmat.2010.09.025  0.418
2011 Viswanath B, Ko C, Ramanathan S. Thermoelastic switching with controlled actuation in VO2 thin films Scripta Materialia. 64: 490-493. DOI: 10.1016/J.Scriptamat.2010.11.018  0.4
2011 Lai B, Kerman K, Ramanathan S. Methane-fueled thin film micro-solid oxide fuel cells with nanoporous palladium anodes Journal of Power Sources. 196: 6299-6304. DOI: 10.1016/J.Jpowsour.2011.03.093  0.348
2011 Kerman K, Lai B, Ramanathan S. Thin film nanocrystalline Ba0.5Sr0.5Co0.8Fe0.2O3: Synthesis, conductivity, and micro-solid oxide fuel cells Journal of Power Sources. 196: 6214-6218. DOI: 10.1016/J.Jpowsour.2011.03.049  0.406
2011 Kerman K, Lai B, Ramanathan S. Pt/Y0.16Zr0.84O1.92/Pt thin film solid oxide fuel cells: Electrode microstructure and stability considerations Journal of Power Sources. 196: 2608-2614. DOI: 10.1016/J.Jpowsour.2010.10.068  0.39
2011 Lai B, Kerman K, Ramanathan S. Nanostructured La0.6Sr0.4Co0.8Fe0.2O3/Y0.08Zr0.92O1.96/La0.6Sr0.4Co0.8Fe0.2O3 (LSCF/YSZ/LSCF) symmetric thin film solid oxide fuel cells Journal of Power Sources. 196: 1826-1832. DOI: 10.1016/J.Jpowsour.2010.09.066  0.396
2011 Gopalakrishnan G, Ramanathan S. Compositional and metal-insulator transition characteristics of sputtered vanadium oxide thin films on yttria-stabilized zirconia Journal of Materials Science. 46: 5768-5774. DOI: 10.1007/S10853-011-5532-6  0.541
2011 Jaramillo R, Ramanathan S. Electronic granularity and the work function of transparent conducting ZnO:Al thin films Advanced Functional Materials. 21: 4068-4072. DOI: 10.1002/Adfm.201101069  0.391
2010 Deng D, Martin ST, Ramanathan S. Synthesis and characterization of one-dimensional flat ZnO nanotower arrays as high-efficiency adsorbents for the photocatalytic remediation of water pollutants. Nanoscale. 2: 2685-91. PMID 20949200 DOI: 10.1039/C0Nr00537A  0.357
2010 Lai B, Johnson AC, Tsuchiya M, Ramanathan S. Toward wafer-scale fabrication and 3D integration of micro-solid oxide fuel cells for portable energy Proceedings of Spie. 7679: 767916. DOI: 10.1117/12.846916  0.337
2010 Yang Z, Ko C, Balakrishnan V, Gopalakrishnan G, Ramanathan S. Dielectric and carrier transport properties of vanadium dioxide thin films across the phase transition utilizing gated capacitor devices Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.205101  0.499
2010 Chang CL, Sankaranarayanan SKRS, Ruzmetov D, Engelhard MH, Kaxiras E, Ramanathan S. Compositional tuning of ultrathin surface oxides on metal and alloy substrates using photons: Dynamic simulations and experiments Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.085406  0.389
2010 Tsuchiya M, Bojarczuk NA, Guha S, Ramanathan S. Transmission electron microscopy studies on structure and defects in crystalline yttria and lanthanum oxide thin films grown on single crystal sapphire by molecular beam synthesis Philosophical Magazine. 90: 1123-1139. DOI: 10.1080/14786430903292415  0.415
2010 Aydogdu GH, Ruzmetov D, Ramanathan S. Metastable oxygen incorporation into thin film NiO by low temperature active oxidation: Influence on hole conduction Journal of Applied Physics. 108: 113702. DOI: 10.1063/1.3516473  0.473
2010 Yang Z, Ko C, Ramanathan S. Metal-insulator transition characteristics of VO2 thin films grown on Ge(100) single crystals Journal of Applied Physics. 108: 073708. DOI: 10.1063/1.3492716  0.52
2010 Ko C, Shandalov M, McIntyre PC, Ramanathan S. High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure Applied Physics Letters. 97: 82102. DOI: 10.1063/1.3482940  0.463
2010 Podpirka A, Viswanath B, Ramanathan S. Active low temperature oxidation as a route to minimize electrode-oxide interface reactions in nanoscale capacitors Journal of Applied Physics. 108: 24106. DOI: 10.1063/1.3456446  0.464
2010 Kim J, Ko C, Frenzel A, Ramanathan S, Hoffman JE. Nanoscale imaging and control of resistance switching in VO2 at room temperature Applied Physics Letters. 96. DOI: 10.1063/1.3435466  0.403
2010 Ruzmetov D, Gopalakrishnan G, Ko C, Narayanamurti V, Ramanathan S. Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer Journal of Applied Physics. 107. DOI: 10.1063/1.3408899  0.455
2010 Oh DW, Ko C, Ramanathan S, Cahill DG. Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO2 Applied Physics Letters. 96. DOI: 10.1063/1.3394016  0.384
2010 Okimura K, Sakai J, Ramanathan S. In situ x-ray diffraction studies on epitaxial VO2 films grown on c-Al2O3 during thermally induced insulator-metal transition Journal of Applied Physics. 107: 63503. DOI: 10.1063/1.3327422  0.464
2010 Chang C, Engelhard MH, Ramanathan S. Mechanistic Studies on Room Temperature Photoexcitation Effects on Passivity Breakdown of Ultrathin Surface Oxide Films Formed on Ternary Al-5%Cu-5%Ni Alloys Journal of Physical Chemistry C. 114: 17788-17795. DOI: 10.1021/Jp106297C  0.421
2010 Sankaranarayanan SKRS, Ramanathan S. Electric Field Control of Surface Oxygen Dynamics and its Effect on the Atomic Scale Structure and Morphology of a Growing Ultrathin Oxide Film Journal of Physical Chemistry C. 114: 6631-6639. DOI: 10.1021/Jp100533W  0.414
2010 Hormoz S, Ramanathan S. Limits on vanadium oxide Mott metal-insulator transition field-effect transistors Solid-State Electronics. 54: 654-659. DOI: 10.1016/J.Sse.2010.01.006  0.376
2010 Lai B, Kerman K, Ramanathan S. On the role of ultra-thin oxide cathode synthesis on the functionality of micro-solid oxide fuel cells: Structure, stress engineering and in situ observation of fuel cell membranes during operation Journal of Power Sources. 195: 5185-5196. DOI: 10.1016/J.Jpowsour.2010.02.079  0.408
2010 Cain T, Lai BK, Sankaranarayanan S, Ramanathan S. Photo-excitation enhanced high temperature conductivity and crystallization kinetics in ultra-thin La0.6Sr0.4Co0.8Fe0.2O3-δ films Journal of Power Sources. 195: 3145-3148. DOI: 10.1016/J.Jpowsour.2009.11.106  0.397
2010 Tsuchiya M, Lai B, Johnson AC, Ramanathan S. Photon-assisted synthesis of ultra-thin yttria-doped zirconia membranes: Structure, variable temperature conductivity and micro-fuel cell devices Journal of Power Sources. 195: 994-1000. DOI: 10.1016/J.Jpowsour.2009.08.072  0.486
2010 Johnson AC, Baclig A, Harburg DV, Lai B, Ramanathan S. Fabrication and electrochemical performance of thin-film solid oxide fuel cells with large area nanostructured membranes Journal of Power Sources. 195: 1149-1155. DOI: 10.1016/J.Jpowsour.2009.08.066  0.385
2009 Tsuchiya M, Bojarczuk NA, Guha S, Ramanathan S. Microstructural effects on electrical conductivity relaxation in nanoscale ceria thin films. The Journal of Chemical Physics. 130: 174711. PMID 19425802 DOI: 10.1063/1.3126092  0.464
2009 Sankaranarayanan SK, Kaxiras E, Ramanathan S. Atomistic simulation of field enhanced oxidation of Al (100) beyond the mott potential. Physical Review Letters. 102: 095504. PMID 19392533 DOI: 10.1103/Physrevlett.102.095504  0.409
2009 Ramanathan S. Interface-mediated ultrafast carrier conduction in oxide thin films and superlattices for energy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 1126-1134. DOI: 10.1116/1.3186616  0.459
2009 Ramanathan S, Karthikeyan A, Govindarajan SA, Kirsh PD. Erratum: ``Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies'' [J. Vac. Sci. Technol. B 26, L33 (2008)] Journal of Vacuum Science & Technology B. 27: 198-198. DOI: 10.1116/1.3054289  0.396
2009 Podpirka A, Ramanathan S. Transference numbers for in-plane carrier conduction in thin film nanostructured gadolinia-doped ceria under varying oxygen partial pressure Journal of the American Ceramic Society. 92: 2400-2403. DOI: 10.1111/J.1551-2916.2009.03200.X  0.428
2009 Ruzmetov D, Heiman D, Claflin BB, Narayanamurti V, Ramanathan S. Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.153107  0.447
2009 Ruzmetov D, Gopalakrishnan G, Deng J, Narayanamurti V, Ramanathan S. Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions Journal of Applied Physics. 106. DOI: 10.1063/1.3245338  0.459
2009 Ko C, Ramanathan S. Dispersive capacitance and conductance across the phase transition boundary in metal-vanadium oxide-silicon devices Journal of Applied Physics. 106. DOI: 10.1063/1.3186024  0.445
2009 Sankaranarayanan SKRS, Kaxiras E, Ramanathan S. Electric field tuning of oxygen stoichiometry at oxide surfaces: Molecular dynamics simulations studies of zirconia Energy and Environmental Science. 2: 1196-1204. DOI: 10.1039/B913154J  0.442
2009 Chang C, Sankaranarayanan SKRS, Engelhard MH, Shutthanandan V, Ramanathan S. On the Relationship between Nonstoichiometry and Passivity Breakdown in Ultrathin Oxides: Combined Depth-Dependent Spectroscopy, Mott−Schottky Analysis, and Molecular Dynamics Simulation Studies Journal of Physical Chemistry C. 113: 3502-3511. DOI: 10.1021/Jp808424G  0.455
2009 Tsuchiya M, Sankaranarayanan SKRS, Ramanathan S. Photon-assisted oxidation and oxide thin film synthesis: A review Progress in Materials Science. 54: 981-1057. DOI: 10.1016/J.Pmatsci.2009.04.003  0.414
2009 Xiong H, Lai B, Johnson AC, Ramanathan S. Low-temperature electrochemical characterization of dense ultra-thin lanthanum strontium cobalt ferrite (La0.6Sr0.4Co0.8Fe0.2O3) cathodes synthesized by RF-sputtering on nanoporous alumina-supported Y-doped zirconia membranes Journal of Power Sources. 193: 589-592. DOI: 10.1016/J.Jpowsour.2009.04.024  0.423
2009 Johnson AC, Lai B, Xiong H, Ramanathan S. An experimental investigation into micro-fabricated solid oxide fuel cells with ultra-thin La0.6Sr0.4Co0.8Fe0.2O3 cathodes and yttria-doped zirconia electrolyte films Journal of Power Sources. 186: 252-260. DOI: 10.1016/J.Jpowsour.2008.10.021  0.414
2009 Lai B, Johnson AC, Xiong H, Ramanathan S. Ultra-thin nanocrystalline lanthanum strontium cobalt ferrite (La0.6Sr0.4Co0.8Fe0.2O3−δ) films synthesis by RF-sputtering and temperature-dependent conductivity studies Journal of Power Sources. 186: 115-122. DOI: 10.1016/J.Jpowsour.2008.09.094  0.485
2009 Asmatulu R, Karthikeyan A, Bell DC, Ramanathan S, Aziz MJ. Synthesis and variable temperature electrical conductivity studies of highly ordered TiO2 nanotubes Journal of Materials Science. 44: 4613-4616. DOI: 10.1007/S10853-009-3703-5  0.375
2009 Cole MW, Podpirka A, Ramanathan S. A post-growth processing methodology to achieve barium strontium titanate thin films with low dielectric loss and high tunability for reconfigurable tunable devices Journal of Materials Science. 44: 5332-5338. DOI: 10.1007/S10853-009-3538-0  0.43
2009 Gopalakrishnan G, Ruzmetov D, Ramanathan S. On the triggering mechanism for the metal-insulator transition in thin film VO2 devices: Electric field versus thermal effects Journal of Materials Science. 44: 5345-5353. DOI: 10.1007/S10853-009-3442-7  0.438
2009 Lai B‐, Xiong H, Tsuchiya M, Johnson AC, Ramanathan S. Microstructure and Microfabrication Considerations for Self‐Supported On‐Chip Ultra‐Thin Micro‐Solid Oxide Fuel Cell Membranes Fuel Cells. 9: 699-710. DOI: 10.1002/Fuce.200800144  0.44
2008 Ruzmetov D, Zawilski KT, Senanayake SD, Narayanamurti V, Ramanathan S. Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 465204. PMID 21693844 DOI: 10.1088/0953-8984/20/46/465204  0.414
2008 Karthikeyan A, Tsuchiya M, Ramanathan S. Apatite-phase synthesis from interdiffusion in doped CeO 2-SiO2 thin-film superlattices and in situ conductivity studies Electrochemical and Solid-State Letters. 11: K101-K103. DOI: 10.1149/1.2971170  0.468
2008 Ramanathan S, Karthikeyan A, Govindarajan SA, Kirsch PD. Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: L33-L35. DOI: 10.1116/1.2957622  0.476
2008 Sankaranarayanan SKRS, Ramanathan S. Molecular dynamics simulation study of nanoscale passive oxide growth on Ni-Al alloy surfaces at low temperatures Physical Review B. 78: 85420. DOI: 10.1103/Physrevb.78.085420  0.333
2008 Ruzmetov D, Senanayake SD, Narayanamurti V, Ramanathan S. Correlation between metal-insulator transition characteristics and electronic structure changes in vanadium oxide thin films Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.195442  0.466
2008 Tsuchiya M, Ramanathan S. Photon irradiation-induced structural and interfacial phenomena in pure and alio-valently doped zirconia thin films Philosophical Magazine. 88: 2519-2528. DOI: 10.1080/14786430802247189  0.45
2008 Tsuchiya M, Ramanathan S. Enhanced grain growth in yttria-doped zirconia thin film structures synthesized under photon irradiation Philosophical Magazine Letters. 88: 583-590. DOI: 10.1080/09500830802322178  0.435
2008 Tsuchiya M, Shutthanandan V, Engelhard MH, Ramanathan S. Direct measurement of oxygen incorporation into thin film oxides at room temperature upon ultraviolet photon irradiation Applied Physics Letters. 93: 263109. DOI: 10.1063/1.3058691  0.462
2008 Ko C, Ramanathan S. Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry Applied Physics Letters. 93. DOI: 10.1063/1.3050464  0.467
2008 Karthikeyan A, Ramanathan S. Temperature-dependent interfacial carrier transport in low-dimensional oxides using ionic conductor-insulator (YDZ-SiO2) superlattices Journal of Applied Physics. 104. DOI: 10.1063/1.3031220  0.399
2008 Ko C, Ramanathan S. Stability of electrical switching properties in vanadium dioxide thin films under multiple thermal cycles across the phase transition boundary Journal of Applied Physics. 104. DOI: 10.1063/1.3000664  0.499
2008 Chang C, Engelhard MH, Ramanathan S. Superior nanoscale passive oxide layers synthesized under photon irradiation for environmental protection Applied Physics Letters. 92: 263103. DOI: 10.1063/1.2952282  0.391
2008 Karthikeyan A, Ramanathan S. Oxygen surface exchange studies in thin film Gd-doped ceria Applied Physics Letters. 92. DOI: 10.1063/1.2938028  0.439
2008 Podpirka A, Cole MW, Ramanathan S. Effect of photon irradiation on structural, dielectric, and insulating properties of Ba0.60Sr0.40TiO3 thin films Applied Physics Letters. 92. DOI: 10.1063/1.2936305  0.458
2008 Ko C, Ramanathan S. Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide Journal of Applied Physics. 103. DOI: 10.1063/1.2931006  0.487
2008 Tsuchiya M, Ramanathan S. Synthesis and interfacial phenomena in ultra-thin yttria-doped zirconia films grown by alloy oxidation under photon irradiation Applied Physics Letters. 92. DOI: 10.1063/1.2837194  0.484
2008 Sankaranarayanan SKRS, Ramanathan S. On the Low-Temperature Oxidation and Ultrathin Oxide Growth on Zirconium in the Presence of Atomic Oxygen: A Modeling Study Journal of Physical Chemistry C. 112: 17877-17882. DOI: 10.1021/Jp804872U  0.358
2008 Karthikeyan A, Tsuchiya M, Ramanathan S. Studies on structure-electrochemical conduction relationships in doped-zirconia thin films Solid State Ionics. 179: 1234-1237. DOI: 10.1016/J.Ssi.2007.12.081  0.458
2007 Ramanathan S, Morse DC. Simulations of dynamics and viscoelasticity in highly entangled solutions of semiflexible rods. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 76: 010501. PMID 17677401 DOI: 10.1103/Physreve.76.010501  0.422
2007 Ramanathan S, Morse DC. Brownian dynamics algorithm for entangled wormlike threads. The Journal of Chemical Physics. 126: 094906. PMID 17362126 DOI: 10.1063/1.2464104  0.421
2007 Chang CL, Shutthanandan V, Singhal SC, Ramanathan S. In-Situ Studies on Stoichiometry and Structure of Thin Film Yttria-Stabilized Zirconia under Thermal Processing Mrs Proceedings. 1023. DOI: 10.1557/Proc-1023-Jj01-07  0.444
2007 Ginestra CN, Sreenivasan R, Karthikeyan A, Ramanathan S, McIntyre PC. Atomic layer deposition of Y2O3/ZrO2 nanolaminates: A route to ultrathin solid-state electrolyte membranes Electrochemical and Solid-State Letters. 10: B161-B165. DOI: 10.1149/1.2759606  0.407
2007 Chang CL, Ramanathan S. A theoretical approach to investigate low-temperature nanoscale oxidation of metals under UV radiation Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2737347  0.394
2007 Ruzmetov D, Senanayake SD, Ramanathan S. X-ray absorption spectroscopy of vanadium dioxide thin films across the phase-transition boundary Physical Review B. 75. DOI: 10.1103/Physrevb.75.195102  0.403
2007 Tsuchiya M, Minor AM, Ramanathan S. Size-dependent phase transformations in nanoscale pure and Y-doped zirconia thin films Philosophical Magazine. 87: 5673-5684. DOI: 10.1080/14786430701708349  0.447
2007 Tsuchiya M, Ramanathan S. Effect of photon irradiation on structure of yttria-doped zirconia thin films grown on semiconductor substrates Applied Physics Letters. 91. DOI: 10.1063/1.2825567  0.469
2007 Tsuchiya M, Bojarczuk NA, Ramanathan S. Molecular beam synthesis and high temperature electrical properties of crystalline ceria thin films Applied Physics Letters. 91: 223101. DOI: 10.1063/1.2818666  0.439
2007 Ruzmetov D, Zawilski KT, Narayanamurti V, Ramanathan S. Structure-functional property relationships in rf-sputtered vanadium dioxide thin films Journal of Applied Physics. 102. DOI: 10.1063/1.2817818  0.482
2007 Govindarajan S, Böscke TS, Sivasubramani P, Kirsch PD, Lee BH, Tseng HH, Jammy R, Schröder U, Ramanathan S, Gnade BE. Higher permittivity rare earth doped Hf O2 for sub- 45-nm metal-insulator-semiconductor devices Applied Physics Letters. 91. DOI: 10.1063/1.2768002  0.399
2007 Wang H, Ramanathan S. Effect of intrinsic stress from a nanoscale high-dielectric constant gate oxide on strain in a transistor channel Applied Physics Letters. 91. DOI: 10.1063/1.2753732  0.316
2007 Karthikeyan A, Tsuchiya M, Chang CL, Ramanathan S. Tunable electrical conductivity in nanoscale Gd-doped ceria thin films Applied Physics Letters. 90. DOI: 10.1063/1.2752028  0.482
2007 Chang C, Shutthanandan V, Singhal SC, Ramanathan S. In situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs Applied Physics Letters. 90: 203109. DOI: 10.1063/1.2740200  0.326
2007 Karthikeyan A, Ramanathan S. Effect of photon irradiation on conductivity of nanoscale yttria-doped zirconia thin films Applied Physics Letters. 90. DOI: 10.1063/1.2709990  0.444
2006 Mani RG, Ramanathan S, Narayanamurti V. Electrical study of device arrays on thin film vanadium dioxide Materials Research Society Symposium Proceedings. 966: 192-197. DOI: 10.1557/Proc-0966-T10-18  0.4
2006 Shamsa M, Morrow P, Ramanathan S. Theoretical Analysis of Thermal Conductivity in Amorphous Inter-layer Dielectrics Mrs Proceedings. 914. DOI: 10.1557/Proc-0914-F03-01  0.345
2006 Ramanathan S, Chrysler GM. Solid-state refrigeration for cooling microprocessors Ieee Transactions On Components and Packaging Technologies. 29: 179-183. DOI: 10.1109/Tcapt.2006.870392  0.372
2006 Karthikeyan A, Chang CL, Ramanathan S. High temperature conductivity studies on nanoscale yttria-doped zirconia thin films and size effects Applied Physics Letters. 89. DOI: 10.1063/1.2385211  0.468
2005 Ramanathan S, Hu C, Pickett E, Morrow P, Liu Y, Dias R. Non-destructive high-resolution characterization of buried interfaces for advanced interconnect and packaging architectures: Experiments and modeling Microelectronic Engineering. 82: 84-91. DOI: 10.1016/J.Mee.2005.06.005  0.328
2004 Ramanathan S, McIntyre PC, Guha S, Gusev E. Charge trapping studies on ultrathin ZrO2 and HfO2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation Applied Physics Letters. 84: 389-391. DOI: 10.1063/1.1636532  0.349
2002 Chui CO, Ramanathan S, Triplett BB, McIntyre PC, Saraswat KC. Germanium MOS capacitors incorporating ultrathin high-κ gate dielectric Ieee Electron Device Letters. 23: 473-475. DOI: 10.1109/Led.2002.801319  0.404
2002 Ramanathan S, McIntyre PC, Luning J, Pianetta P, Muller DA. Structural studies of ultrathin zirconia dielectrics Philosophical Magazine Letters. 82: 519-528. DOI: 10.1080/09500830210157108  0.433
2002 Ramanathan S, McIntyre PC. Ultrathin zirconia/SiO2 dielectric stacks grown by ultraviolet-ozone oxidation Applied Physics Letters. 80: 3793-3795. DOI: 10.1063/1.1481241  0.481
2002 Ramanathan S, Park C, McIntyre PC. Electrical properties of thin film zirconia grown by ultraviolet ozone oxidation Journal of Applied Physics. 91: 4521-4527. DOI: 10.1063/1.1459103  0.496
2001 Ramanathan S, Clemens BM, McIntyre PC, Dahmen U. Microstructural study of epitaxial platinum and permalloy/platinum films grown on (0001) sapphire Philosophical Magazine. 81: 2073-2094. DOI: 10.1080/01418610010028981  0.383
2001 Ramanathan S, Muller DA, Wilk GD, Park CM, McIntyre PC. Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics Applied Physics Letters. 79: 3311-3313. DOI: 10.1063/1.1418266  0.379
2001 Ramanathan S, Wilk GD, Muller DA, Park C, McIntyre PC. Growth and characterization of ultrathin zirconia dielectrics grown by ultraviolet ozone oxidation Applied Physics Letters. 79: 2621-2623. DOI: 10.1063/1.1410871  0.469
2000 Ramanathan S, Clemens BM, Mclntyre PC, Dahmen U. Epitaxial Platinum Films on (0001) Sapphire: a Microstructural Study Microscopy and Microanalysis. 6: 436-437. DOI: 10.1017/S143192760003467X  0.426
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