Jonathan C. Denyszyn, Ph.D. - Publications

Affiliations: 
2000-2006 Electrial Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
 2006-2016 Advanced Micro Devices (AMD ), Inc. 
 2016- Novati 
Area:
Solid State Physics, Batteries, Fuel Cells, Superconductivity, Magnetism
Website:
https://www.linkedin.com/in/jonathan-denyszyn-b15b799

7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Huang YH, Dass RI, Denyszyn JC, Goodenough JB. Synthesis and characterization of Sr2MgMoO6-δ Journal of the Electrochemical Society. 153: A1266-A1272. DOI: 10.1149/1.2195882  0.376
2006 Zhou HD, Janik JA, Vogt BW, Jo YJ, Balicas L, Case MJ, Wiebe CR, Denyszyn JC, Goodenough JB, Cheng JG. Specific heat of geometrically frustrated and multiferroic R Mn1-x Gax O3 (R=Ho,Y) Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.094426  0.358
2005 Zhou HD, Denyszyn JC, Goodenough JB. Effect of Ga doping on the multiferroic properties of RMn1-xGaxO3 (R=Ho,Y) Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.224401  0.38
2003 Chowdhury U, Wong MM, Collins CJ, Yang B, Denyszyn JC, Campbell JC, Dupuis RD. High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer Journal of Crystal Growth. 248: 552-555. DOI: 10.1016/S0022-0248(02)01877-8  0.303
2001 Wong MM, Denyszyn JC, Collins CJ, Chowdhury U, Zhu TG, Kim KS, Dupuis RD. AlGaN/AlGaN double-heterojunction ultraviolet light-emitting diodes grown by metal organic chemical vapour deposition Electronics Letters. 37: 1188-1190. DOI: 10.1049/El:20010779  0.323
2001 Wong MM, Chowdhury U, Collins CJ, Yang B, Denyszyn JC, Kim KS, Campbell JC, Dopuis RD. High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition Physica Status Solidi (a) Applied Research. 188: 333-336. DOI: 10.1002/1521-396X(200111)188:1<333::Aid-Pssa333>3.0.Co;2-X  0.323
2001 Zhu TG, Chowdhury U, Wong MM, Kim KS, Denyszyn JC, Dupuis RD. GaN and AlxGa1-xN p-i-n High-Voltage Rectifiers Grown by Metalorganic Chemical Vapor Deposition Physica Status Solidi (a) Applied Research. 188: 301-305. DOI: 10.1002/1521-396X(200111)188:1<301::Aid-Pssa301>3.0.Co;2-G  0.314
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