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Kenneth K. Chu, Ph.D. - Publications

Affiliations: 
2000 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Chao PC, Chu K, Creamer C, Diaz J, Yurovchak T, Shur M, Kallaher R, McGray C, Via GD, Blevins JD. Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2480756  0.378
2000 Green BM, Chu KK, Smart JA, Tilak V, Kim H, Shealy JR, Eastman LF. Cascode connected AlGaN/GaN HEMTs on SiC substrates Ieee Microwave and Guided Wave Letters. 10: 316-318. DOI: 10.1109/75.862226  0.704
2000 Green BM, Lee S, Chu K, Webb KJ, Eastman LF. High efficiency monolithic gallium nitride distributed amplifier Ieee Microwave and Wireless Components Letters. 10: 270-272. DOI: 10.1109/75.856985  0.6
2000 Green BM, Chu KK, Chumbes EM, Smart JA, Shealy JR, Eastman LF. Effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's Ieee Electron Device Letters. 21: 268-270. DOI: 10.1109/55.843146  0.717
2000 Ambacher O, Foutz B, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Sierakowski AJ, Schaff WJ, Eastman LF, Dimitrov R, Mitchell A, Stutzmann M. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures Journal of Applied Physics. 87: 334-344. DOI: 10.1063/1.371866  0.7
1999 Murphy MJ, Foutz BE, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Dimitrov R, Stutzmann M, Rieger W. Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4: 840-845. DOI: 10.1557/S1092578300003501  0.642
1999 Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Smart J, Shealy JR, Eastman LF, Eustis TJ. Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures Journal of Vacuum Science & Technology B. 17: 1252-1254. DOI: 10.1116/1.590733  0.731
1999 Ambacher O, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Schaff WJ, Eastman LF, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures Journal of Applied Physics. 85: 3222-3233. DOI: 10.1063/1.369664  0.709
1999 Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Silcox J, Dimitrov R, Stutzmann M. High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 75: 3653-3655. DOI: 10.1063/1.125418  0.708
1999 Ambacher O, Dimitrov R, Stutzmann M, Foutz BE, Murphy MJ, Smart JA, Shealy JR, Weimann NG, Chu K, Chumbes M, Green B, Sierakowski AJ, Schaff WJ, Eastman LF. Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices Physica Status Solidi B-Basic Solid State Physics. 216: 381-389. DOI: 10.1002/(Sici)1521-3951(199911)216:1<381::Aid-Pssb381>3.0.Co;2-O  0.723
1998 Murphy MJ, Foutz BE, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Dimitrov R, Stutzmann M, Rieger W. Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G8.4  0.642
1998 Eastman LF, chu K, smart J, Shealy JR. GaN Materials for High Power Microwave Amplifiers Mrs Proceedings. 512. DOI: 10.1557/Proc-512-3  0.588
1997 Eastman L, Chu K, Schaff W, Murphy M, Weimann NG, Eustis T. High Frequency AlGaN/GaN MODFET's Mrs Internet Journal of Nitride Semiconductor Research. 2. DOI: 10.1557/S1092578300001435  0.571
1997 Burm J, Chu K, Schaff WJ, Eastman LF, Khan MA, Chen Q, Yang JW, Shur MS. 0.12-μm gate III-V nitride HFET's with high contact resistances Ieee Electron Device Letters. 18: 141-143. DOI: 10.1109/55.563309  0.523
1997 Burm J, Chu K, Davis WA, Schaff WJ, Eastman LF, Eustis TJ. Ultra-low resistive ohmic contacts on n-GaN using Si implantation Applied Physics Letters. 70: 464-466. DOI: 10.1063/1.118182  0.481
1996 Eastman L, Burm J, Schaff W, Murphy M, Chu K, Amano H, Akasaki I. Research on GaN MODFET's Mrs Internet Journal of Nitride Semiconductor Research. 1. DOI: 10.1557/S1092578300001769  0.536
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