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Barbaros Aslan, Ph.D. - Publications

Affiliations: 
2010 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Aslan B, Eastman LF. A THz-range planar NDR device utilizing ballistic electron acceleration in GaN Solid-State Electronics. 64: 57-62. DOI: 10.1016/J.Sse.2011.06.044  0.533
2009 Aslan B, Eastman LF, Diduck Q. Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation International Journal of High Speed Electronics and Systems. 19: 1-6. DOI: 10.1142/S0129156409006035  0.489
2007 Aslan B, Eastman LF, Schaff WJ, Chen X, Spencer MG, Cha HOY, Dyson A, Ridley BK. Ballistic electron acceleration negative-differantial-conductivity devices International Journal of High Speed Electronics and Systems. 17: 173-176. DOI: 10.1142/S012915640600376X  0.52
2007 Dyson A, Ridley BK, Aslan B, Cha HY, Chen X, Schaff WJ, Spencer MG, Eastman LF. GaN ballistic negative-differential-conductivity diode for potential THz applications Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 528-530. DOI: 10.1002/pssc.200673213  0.519
2007 Dyson A, Ridley BK, Aslan B, Cha HY, Chen X, Schaff WJ, Spencer MG, Eastman LF. GaN ballistic negative-differential-conductivity diode for potential THz applications Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 528-530. DOI: 10.1002/Pssc.200673213  0.545
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