| Year |
Citation |
Score |
| 2011 |
Mudenda S, Streib KL, Adams D, Mayer JW, Nemutudi R, Alford TL. Effect of substrate patterning on hydroxyapatite sol-gel thin film growth Thin Solid Films. 519: 5603-5608. DOI: 10.1016/J.Tsf.2011.02.067 |
0.57 |
|
| 2009 |
Alford TL, Thompson DC, Mayer JW, Theodore ND. Dopant activation in ion implanted silicon by microwave annealing Journal of Applied Physics. 106. DOI: 10.1063/1.3260245 |
0.6 |
|
| 2009 |
Alford TL, Misra E, Bhagat SK, Mayer JW. Influence of Joule heating during electromigration evaluation of silver lines Thin Solid Films. 517: 1833-1836. DOI: 10.1016/J.Tsf.2008.08.196 |
0.503 |
|
| 2008 |
Thompson DC, Alford TL, Mayer JW. Spectroscopic study of microwave-enhanced silicon exfoliation Applied Physics Letters. 92. DOI: 10.1063/1.2842420 |
0.583 |
|
| 2008 |
Alford TL, Shetty PK, Theodore ND, Tile N, Adams D, Mayer JW. Nanocrystalline Si formation in the a-Si/Al system on polyimide and silicon dioxide substrates Thin Solid Films. 516: 3940-3947. DOI: 10.1016/J.Tsf.2007.07.204 |
0.649 |
|
| 2008 |
Alford TL, Tang T, Thompson DC, Bhagat S, Mayer JW. Influence of microwave annealing on direct bonded silicon wafers Thin Solid Films. 516: 2158-2161. DOI: 10.1016/J.Tsf.2007.06.118 |
0.541 |
|
| 2007 |
Thompson DC, Alford TL, Mayer JW, Hochbauer T, Lee JK, Nastasi M, David Theodore N. Microwave activation of exfoliation in ion-cut silicon layer transfer Materials Research Society Symposium Proceedings. 994: 137-142. DOI: 10.1557/Proc-0994-F11-07 |
0.6 |
|
| 2007 |
Han H, Zoo Y, Mayer JW, Alford TL. Potential of Ag interconnect and contact metallization for various applications via Cu additions Materials Research Society Symposium Proceedings. 990: 191-196. DOI: 10.1557/Proc-0990-B08-24 |
0.553 |
|
| 2007 |
Thompson DC, Decker J, Alford TL, Mayer JW, Theodore ND. Microwave activation of dopants & solid phase epitaxy in silicon Materials Research Society Symposium Proceedings. 989: 145-150. DOI: 10.1557/Proc-0989-A06-18 |
0.604 |
|
| 2007 |
Han H, Zoo Y, Mayer JW, Alford TL. Improved surface morphology and texture of Ag films on indium tin oxide via Cu additions Journal of Applied Physics. 102. DOI: 10.1063/1.2761822 |
0.562 |
|
| 2007 |
Thompson DC, Alford TL, Mayer JW, Höchbauer T, Lee JK, Nastasi M, Lau SS, Theodore ND, Chu PK. Microwave enhanced ion-cut silicon layer transfer Journal of Applied Physics. 101. DOI: 10.1063/1.2737387 |
0.586 |
|
| 2007 |
Alford TL, Feldman LC, Mayer JW. Fundamentals of nanoscale film analysis Fundamentals of Nanoscale Film Analysis. 1-338. DOI: 10.1007/978-0-387-29261-8 |
0.475 |
|
| 2006 |
Han H, Mayer JW, Alford TL. Band gap shift in the indium-tin-oxide films on polyethylene napthalate after thermal annealing in air Journal of Applied Physics. 100. DOI: 10.1063/1.2357647 |
0.558 |
|
| 2006 |
Han H, Mayer JW, Alford TL. Effect of various annealing environments on electrical and optical properties of indium tin oxide on polyethylene napthalate Journal of Applied Physics. 99. DOI: 10.1063/1.2204815 |
0.566 |
|
| 2006 |
Shao L, Lee JK, Wang YQ, Nastasi M, Thompson PE, Theodore ND, Alford TL, Mayer JW, Chen P, Lau SS. Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy Journal of Applied Physics. 99. DOI: 10.1063/1.2204330 |
0.605 |
|
| 2006 |
Di Z, Chu PK, Zhu M, Fu RKY, Luo S, Shao L, Nastasi M, Chen P, Alford TL, Mayer JW, Zhang M, Liu W, Song Z, Lin C. Fabrication of silicon-on-SiO 2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects Applied Physics Letters. 88. DOI: 10.1063/1.2192981 |
0.625 |
|
| 2006 |
Shao L, Lin Y, Swadener JG, Lee JK, Jia QX, Wang YQ, Nastasi M, Thompson PE, Theodore ND, Alford TL, Mayer JW, Chen P, Lau SS. H-induced platelet and crack formation in hydrogenated epitaxial Si/Si 0.98B 0.02/Si structures Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2163992 |
0.585 |
|
| 2006 |
Zoo Y, Adams D, Mayer JW, Alford TL. Investigation of coefficient of thermal expansion of silver thin film on different substrates using X-ray diffraction Thin Solid Films. 513: 170-174. DOI: 10.1016/J.Tsf.2006.02.005 |
0.582 |
|
| 2006 |
Shao L, Wang YQ, Nastasi M, Mayer JW. A technique to study the lattice location of light elements in silicon by channeling elastic recoil detection analysis Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 249: 230-233. DOI: 10.1016/J.Nimb.2006.04.004 |
0.341 |
|
| 2006 |
Streib KL, Alford TL, Mayer JW. Experimental verification of theoretical cross sections for FIB-PIXE Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 249: 92-94. DOI: 10.1016/J.Nimb.2006.03.087 |
0.51 |
|
| 2006 |
Höchbauer T, Misra A, Nastasi M, Mayer JW, Ensinger W. Formation of hydrogen complexes in proton implanted silicon and their influence on the crystal damage Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 242: 623-626. DOI: 10.1016/J.Nimb.2005.08.141 |
0.373 |
|
| 2006 |
Misra E, Theodore ND, Mayer JW, Alford TL. Failure mechanisms of pure silver, pure aluminum and silver-aluminum alloy under high current stress Microelectronics Reliability. 46: 2096-2103. DOI: 10.1016/J.Microrel.2006.01.011 |
0.534 |
|
| 2006 |
Shetty PK, Theodore ND, Mayer JW, Alford TL. Kinetics of amorphous silicon dissolution into aluminum layers Materials Letters. 60: 490-493. DOI: 10.1016/J.Matlet.2005.09.022 |
0.648 |
|
| 2006 |
Adams D, Malgas GF, Smith RD, Massia SP, Alford TL, Mayer JW. Microwave annealing for preparation of crystalline hydroxyapatite thin films Journal of Materials Science. 41: 7150-7158. DOI: 10.1007/S10853-006-0925-7 |
0.596 |
|
| 2005 |
Adams D, Smith RD, Malgas GF, Massia SP, Alford TL, Mayer JW. The influence of geometrically configured sol-gel derived hydroxyapatite substrates on osteoblast response Key Engineering Materials. 284: 569-572. DOI: 10.4028/Www.Scientific.Net/Kem.284-286.569 |
0.532 |
|
| 2005 |
Shao L, Lin Y, Swadener JG, Lee JK, Jia QX, Wang YQ, Nastasi M, Thompson PE, Theodore ND, Alford TL, Mayer JW, Chen P, Lau SS. Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2146211 |
0.58 |
|
| 2005 |
Thompson DC, Alford TL, Mayer JW, Hochbauer T, Nastasi M, Lau SS, Theodore ND, Henttinen K, Suni L, Chu PK. Microwave-cut silicon layer transfer Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2135395 |
0.594 |
|
| 2005 |
Han H, Adams D, Mayer JW, Alford TL. Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate Journal of Applied Physics. 98. DOI: 10.1063/1.2106013 |
0.569 |
|
| 2005 |
Chen P, Lau SS, Chu PK, Henttinen K, Suni T, Suni I, Theodore ND, Alford TL, Mayer JW, Shao L, Nastasi M. Silicon layer transfer using plasma hydrogenation Applied Physics Letters. 87. DOI: 10.1063/1.2048811 |
0.589 |
|
| 2005 |
Shao L, Lin Y, Lee JK, Jia QX, Wang Y, Nastasi M, Thompson PE, Theodore ND, Chu PK, Alford TL, Mayer JW, Chen P, Lau SS. Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation Applied Physics Letters. 87. DOI: 10.1063/1.2032602 |
0.6 |
|
| 2005 |
Shao L, Wang YQ, Zhang X, Wetteland CJ, Nastasi M, Thompson PE, Mayer JW. Optimized energy window of He beams for accurate determination of depth in channeling Rutherford backscattering spectrometry Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1941454 |
0.341 |
|
| 2005 |
Chen P, Chu PK, Höchbauer T, Lee JK, Nastasi M, Buca D, Mantl S, Loo R, Caymax M, Alford T, Mayer JW, Theodore ND, Cai M, Schmidt B, Lau SS. Investigation of plasma hydrogenation and trapping mechanism for layer transfer Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1852087 |
0.595 |
|
| 2005 |
Shetty PK, Theodore ND, Ren J, Menendez J, Kim HC, Misra E, Mayer JW, Alford TL. Formation and characterization of silicon films on flexible polymer substrates Materials Letters. 59: 872-875. DOI: 10.1016/J.Matlet.2004.11.034 |
0.633 |
|
| 2004 |
Theodore ND, Kim HC, Gadre KS, Mayer JW, Alford TL. Morphology of Ti37Al63 thin-films deposited by magnetron sputtering Materials Research Society Symposium Proceedings. 812: 215-220. DOI: 10.1557/Proc-812-F3.25 |
0.766 |
|
| 2004 |
Kim HC, David Theodore N, Mayer JW, Alford TL. Thermal stability and electrical properties of Ag(Al) metallization Materials Research Society Symposium Proceedings. 812: 209-214. DOI: 10.1557/Proc-812-F3.24 |
0.589 |
|
| 2004 |
Adams D, Malgas GF, David Theodore N, Gregory R, Kim HC, Misra E, Alford TL, Mayer JW. Effectiveness of reactive sputter-deposited Ta-N films as diffusion barriers for Ag metallization Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2345-2352. DOI: 10.1116/1.1787521 |
0.591 |
|
| 2004 |
Chen P, Chu PK, Höchbauer T, Nastasi M, Buca D, Mantl S, Theodore ND, Alford TL, Mayer JW, Loo R, Caymax M, Cai M, Lau SS. Plasma hydrogenation of strain-relaxed SiGeSi heterostructure for layer transfer Applied Physics Letters. 85: 4944-4946. DOI: 10.1063/1.1824171 |
0.558 |
|
| 2004 |
Lee JK, Nastasi M, Theodore ND, Smalley A, Alford TL, Mayer JW, Cai M, Lau SS. Effects of hydrogen implantation temperature on ion-cut of silicon Journal of Applied Physics. 96: 280-288. DOI: 10.1063/1.1755851 |
0.618 |
|
| 2004 |
Julies BA, Adams D, Mayer JW. The effect of Au thickness and annealing conditions on SiO2 formation in the Au/Si system Thin Solid Films. 469: 282-289. DOI: 10.1016/J.Tsf.2004.08.127 |
0.457 |
|
| 2004 |
Malgas GF, Adams D, Alford TL, Mayer JW. A study of the factors influencing the kinetics in Ag/Al bilayer systems Thin Solid Films. 467: 267-274. DOI: 10.1016/J.Tsf.2004.04.025 |
0.543 |
|
| 2004 |
Kim HC, Theodore ND, Gadre KS, Mayer JW, Alford TL. Investigation of thermal stability, phase formation, electrical, and microstructural properties of sputter-deposited titanium aluminide thin films Thin Solid Films. 460: 17-24. DOI: 10.1016/J.Tsf.2004.01.048 |
0.771 |
|
| 2004 |
Thompson DC, Kim HC, Alford TL, Mayer JW. Ion beam analysis applied to new and innovative technologies Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 968-972. DOI: 10.1016/J.Nimb.2004.01.198 |
0.569 |
|
| 2004 |
Alford TL, Mitan MM, Govindasamy R, Mayer JW. Ion beam analysis of silver thin films on cobalt silicides Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 897-901. DOI: 10.1016/J.Nimb.2004.01.184 |
0.62 |
|
| 2004 |
Nastasi M, Höchbauer T, Verda RD, Misra A, Lee JK, Mayer JW, Lau SS. Using ion beam analysis in determining the mechanisms of cleavage in hydrogen ion implanted Si Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 604-610. DOI: 10.1016/J.Nimb.2004.01.128 |
0.408 |
|
| 2003 |
Thompson DC, Kim HC, Alford TL, Mayer JW. Formation of silicides in a cavity applicator microwave system Applied Physics Letters. 83: 3918-3920. DOI: 10.1063/1.1625430 |
0.529 |
|
| 2003 |
Nastasi M, Mayer J, Hirvonen JK. Ion Beam Assisted Deposition Mrs Proceedings. 792: 363-407. DOI: 10.1017/Cbo9780511565007.014 |
0.378 |
|
| 2003 |
Adams D, Julies BA, Mayer JW, Alford TL. The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems Applied Surface Science. 216: 163-168. DOI: 10.1016/S0169-4332(03)00513-0 |
0.607 |
|
| 2003 |
Mitan MM, Alford TL, Mayer JW. Stability of silver thin films on cobalt and nickel silicides Thin Solid Films. 434: 258-263. DOI: 10.1016/S0040-6090(03)00451-6 |
0.605 |
|
| 2002 |
Alford TL, Mitan M, Mayer JW. Nanometer-scale silicide structures formed by focused ion-beam implantation Proceedings of the International Conference On Ion Implantation Technology. 22: 677-681. DOI: 10.1109/IIT.2002.1258096 |
0.585 |
|
| 2002 |
Höchbauer T, Misra A, Nastasi M, Mayer JW. Physical mechanisms behind the ion-cut in hydrogen implanted silicon Journal of Applied Physics. 92: 2335-2342. DOI: 10.1063/1.1494844 |
0.435 |
|
| 2002 |
Cai M, Qiao D, Yu LS, Lau SS, Li CP, Hung LS, Haynes TE, Henttinen K, Suni I, Poon VMC, Marek T, Mayer JW. Single crystal Si layers on glass formed by ion cutting Journal of Applied Physics. 92: 3388-3392. DOI: 10.1063/1.1492017 |
0.479 |
|
| 2002 |
Höchbauer T, Nastasi M, Verda RD, Misra A, Henttinen K, Suni I, Lau SS, Mayer JW. The use of ion channeling and elastic recoil detection in determining the mechanism of cleavage in the ion-cut process Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 190: 592-597. DOI: 10.1016/S0168-583X(01)01306-4 |
0.416 |
|
| 2002 |
Milan MM, Pivin DP, Alford TL, Mayer JW. Patterning of nanometer-scale suicide structures on silicon by 'direct writing focus ion-beam implantation' Thin Solid Films. 411: 219-224. DOI: 10.1016/S0040-6090(02)00282-1 |
0.623 |
|
| 2001 |
Laursen T, Chandrasekhar D, Hervig RL, Mayer JW, Smith DJ, Jasper C. Fabrication and characterization of C implantation standards for Si1-x-yGexCy alloys Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 2879-2883. DOI: 10.1116/1.1412652 |
0.429 |
|
| 2001 |
Mitan MM, Pivin DP, Alford TL, Mayer JW. Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2525-2528. DOI: 10.1116/1.1408953 |
0.562 |
|
| 2001 |
Gadre KS, Alford TL, Mayer JW. Use of TiN(O)Ti as an effective intermediate stress buffer and diffusion barrier for Cu/parylene-n interconnects Applied Physics Letters. 79: 3260-3262. DOI: 10.1063/1.1416156 |
0.743 |
|
| 2001 |
Malgas GF, Adams D, Nguyen P, Wang Y, Alford TL, Mayer JW. Investigation of the effects of different annealing ambients on Ag/Al bilayers: Electrical properties and morphology Journal of Applied Physics. 90: 5591-5596. DOI: 10.1063/1.1415051 |
0.59 |
|
| 2001 |
Mitan MM, Pivin DP, Alford TL, Mayer JW. Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer Applied Physics Letters. 78: 2727-2729. DOI: 10.1063/1.1369608 |
0.574 |
|
| 2001 |
Höchbauer T, Misra A, Nastasi M, Mayer JW. Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation Journal of Applied Physics. 89: 5980-5990. DOI: 10.1063/1.1353561 |
0.423 |
|
| 2001 |
Zheng Y, Lau SS, Höchbauer T, Misra A, Verda R, He XM, Nastasi M, Mayer JW. Orientation dependence of blistering in H-implanted Si Journal of Applied Physics. 89: 2972-2978. DOI: 10.1063/1.1334921 |
0.421 |
|
| 2001 |
Höchbauer T, Misra A, Verda R, Zheng Y, Lau SS, Mayer JW, Nastasi M. The influence of ion-implantation damage on hydrogen-induced ion-cut Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 175: 169-175. DOI: 10.1016/S0168-583X(00)00540-1 |
0.408 |
|
| 2001 |
Alford TL, Zeng Y, Nguyen P, Chen L, Mayer JW. Self-encapsulation effects on the electromigration resistance of silver lines Microelectronic Engineering. 55: 389-395. DOI: 10.1016/S0167-9317(00)00472-X |
0.565 |
|
| 2001 |
Alford TL, Nguyen P, Zeng Y, Mayer JW. Advanced silver-based metallization patterning for ULSI applications Microelectronic Engineering. 55: 383-388. DOI: 10.1016/S0167-9317(00)00471-8 |
0.55 |
|
| 2000 |
Wang Y, Alford T, Mayer JW. Kinetics model for the self-encapsulation of Ag/Al bilayers Mrs Proceedings. 612. DOI: 10.1557/Proc-612-D9.7.1 |
0.468 |
|
| 2000 |
Höchbauer T, Misra A, Verda R, Nastasi M, Mayer JW, Zheng Y, Lau SS. Hydrogen-implantation induced silicon surface layer exfoliation Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 80: 1921-1931. DOI: 10.1080/13642810008216514 |
0.399 |
|
| 1999 |
Höchbauer T, Nastasi M, Lau SS, Zheng Y, Mayer JW. The influence of damage and dopant on the blister formation in hydrogen implanted silicon Materials Research Society Symposium - Proceedings. 568: 109-114. DOI: 10.1557/Proc-568-109 |
0.4 |
|
| 1999 |
Wang Y, Alford T, Mayer JW. Kinetics of Ag/Al bilayer self-encapsulation Journal of Applied Physics. 86: 5407-5412. DOI: 10.1063/1.371538 |
0.545 |
|
| 1999 |
Höchbauer T, Nastasi M, Mayer JW. Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon Applied Physics Letters. 75: 3938-3940. DOI: 10.1063/1.125500 |
0.397 |
|
| 1998 |
Croke ET, Vajo JJ, Hunter AT, Ahn CC, Chandrasekhar D, Laursen T, Smith DJ, Mayer JW. Stabilizing the surface morphology of Si1-x-yGexCy/Si heterostructures grown by molecular beam epitaxy through the use of a silicon-carbide source Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1937-1942. DOI: 10.1116/1.590111 |
0.419 |
|
| 1998 |
Stein BL, Yu ET, Croke ET, Hunter AT, Laursen T, Mayer JW, Ahn CC. Electronic properties of Si/Si1−x−yGexCy heterojunctions Journal of Vacuum Science & Technology B. 16: 1639-1643. DOI: 10.1116/1.589847 |
0.329 |
|
| 1998 |
Stein BL, Yu ET, Croke ET, Hunter AT, Laursen T, Mayer JW, Ahn CC. Deep-level transient spectroscopy of Si/Si1-x-yGexCy heterostructures Applied Physics Letters. 73: 647-649. DOI: 10.1063/1.121935 |
0.373 |
|
| 1998 |
Adams D, Julies BA, Mayer JW, Alford T. Corrosion of titanium-nitride encapsulated silver films exposed to a H2S ambient Thin Solid Films. 332: 235-239. DOI: 10.1016/S0040-6090(98)01094-3 |
0.623 |
|
| 1998 |
Adams D, Julies BA, Mayer JW, Alford TL. Corrosion of titanium-nitride encapsulated silver films exposed to a H2S ambient Thin Solid Films. 332: 235-239. |
0.341 |
|
| 1997 |
Zou YL, Alford T, Mayer JW. Physical Characterization of Photosensitive Polyimide Mrs Proceedings. 476: 255-260. DOI: 10.1557/Proc-476-255 |
0.454 |
|
| 1997 |
Amali AI, Mayer JW, Zeng Y, Zou YL, Alford T, Deng F, Lau SS. Tem Observations of AG-TI Bilayers After Thermal Aging Treatment in a Reducing Ambient Mrs Proceedings. 472: 197-202. DOI: 10.1557/Proc-472-197 |
0.612 |
|
| 1997 |
Stein BL, Yu ET, Croke ET, Hunter AT, Laursen T, Bair AE, Mayer JW, Ahn CC. Measurement of band offsets in Si/Si1−xGex and Si/Si1−x−yGexCy heterojunctions Journal of Vacuum Science & Technology B. 15: 1108-1111. DOI: 10.1116/1.589422 |
0.362 |
|
| 1997 |
Laursen T, Chandrasekhar D, Smith DJ, Mayer JW, Huffman J, Westhoff R, Robinson M. Crystalline-to-amorphous transition in chemical vapor deposition of pseudomorphic Si 1-x-yGe xC y films Applied Physics Letters. 71: 1634-1636. DOI: 10.1063/1.120001 |
0.441 |
|
| 1997 |
Stein BL, Yu ET, Croke ET, Hunter AT, Laursen T, Bair AE, Mayer JW, Ahn CC. Band offsets in Si/Si1-x-yGexCy heterojunctions measured by admittance spectroscopy Applied Physics Letters. 70: 3413-3415. DOI: 10.1063/1.119188 |
0.375 |
|
| 1997 |
Laursen T, Chandrasekhar D, Smith DJ, Mayer JW, Croke ET, Hunter AT. Materials characterization of Si1−x−yGexCy/Si superlattice structures Thin Solid Films. 308: 358-362. DOI: 10.1016/S0040-6090(97)00578-6 |
0.462 |
|
| 1997 |
Adams D, Laursen T, Alford T, Mayer JW. Titanium-nitride self-encapsulation of Cu and Ag films on silicon dioxide Thin Solid Films. 308: 448-454. DOI: 10.1016/S0040-6090(97)00502-6 |
0.599 |
|
| 1997 |
Croke ET, Hunter AT, Ahn CC, Laursen T, Chandrasekhar D, Bair AE, Smith DJ, Mayer JW. Control of composition and crystallinity in the molecular beam epitaxy of strain-compensated Si1 − x − yGexCy alloys on Si Journal of Crystal Growth. 486-492. DOI: 10.1016/S0022-0248(96)00860-3 |
0.394 |
|
| 1997 |
Amali AI, Mayer JW, Zeng Y, Zou YL, Alford TL, Deng F, Lau SS. TEM observations of Ag-Ti bilayers after thermal aging treatment in a reducing ambient Materials Research Society Symposium - Proceedings. 472: 197-202. |
0.328 |
|
| 1997 |
Laursen T, Chandrasekhar D, Smith DJ, Mayer JW, Croke ET, Hunter AT. Materials characterization of Si1-x-yGexCy/Si superlattice structures Thin Solid Films. 308: 358-362. |
0.362 |
|
| 1997 |
Croke ET, Hunter AT, Ahn CC, Laursen T, Chandrasekhar D, Bair AE, Smith DJ, Mayer JW. Control of composition and crystallinity in the molecular beam epitaxy of strain-compensated Si1 -x-yGexCy alloys on Si Journal of Crystal Growth. 175: 486-492. |
0.309 |
|
| 1996 |
Russell SW, Alford TL, Luptak KA, Pizziconi VB, Mayer JW. The application of ion beam analysis to calcium phosphate-based biomaterials. Journal of Biomedical Materials Research. 30: 165-74. PMID 9019480 DOI: 10.1002/(Sici)1097-4636(199602)30:2<165::Aid-Jbm5>3.0.Co;2-P |
0.564 |
|
| 1996 |
Bair AE, Alford T, Atzmon Z, Marcus SD, Doller DC, Morton R, Lau SS, Mayer JW. Cobalt and Titanium Metallization of SiGeC for Shallow Contacts Mrs Proceedings. 427: 529-533. DOI: 10.1557/Proc-427-529 |
0.624 |
|
| 1996 |
Eyal A, Brener R, Beserman R, Eizenberg M, Atzmon Z, Smith DJ, Mayer JW. The effect of carbon on strain relaxation and phase formation in the Ti/Si1-x-yGexCy/Si contact system Applied Physics Letters. 69: 64-66. DOI: 10.1063/1.118120 |
0.417 |
|
| 1996 |
Orner BA, Olowolafe J, Roe K, Kolodzey J, Laursen T, Mayer JW, Spear J. Band gap of Ge rich Si1−x−yGexCy alloys Applied Physics Letters. 69: 2557-2559. DOI: 10.1063/1.117738 |
0.343 |
|
| 1996 |
Adams D, Alford TL, Rafalski SA, Rack MJ, Russell SW, Kim MJ, Mayer JW. Formation of passivation and adhesion layers for Cu via nitridation of Cu-Ti in an ammonia ambient Materials Chemistry and Physics. 43: 145-152. DOI: 10.1016/0254-0584(95)01610-7 |
0.573 |
|
| 1996 |
Morton R, Deng F, Lau SS, Xin S, Furdyna JK, Hutchins JW, Skromme BJ, Mayer JW. Ion beam mixing in ZnSe/CdZnSe strained layer structures Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 118: 704-708. DOI: 10.1016/0168-583X(96)00330-8 |
0.384 |
|
| 1996 |
Bair AE, Atzmon Z, Russell SW, Barbour JC, Alford T, Mayer JW. Comparison of elastic resonance and elastic recoil detection in the quantification of carbon in SiGeC Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 118: 274-277. DOI: 10.1016/0168-583X(95)01468-3 |
0.562 |
|
| 1996 |
Yu N, Levine TE, Sickafus KE, Nastasi M, Mitchell JN, Maggiore CJ, Evans CR, Hollander MG, Tesmer JR, Weber WJ, Mayer JW. In situ MeV ion beam analysis of ceramic surfaces modified by 100-400 keV ion irradiation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 118: 766-771. DOI: 10.1016/0168-583X(95)01204-4 |
0.329 |
|
| 1996 |
Bair AE, Alford TL, Atzmon Z, Marcus SD, Doller DC, Morton R, Lau SS, Mayer JW. Cobalt and titanium metallization of SiGeC for shallow contacts Materials Research Society Symposium - Proceedings. 427: 529-533. |
0.349 |
|
| 1996 |
Yu N, Mcintyre PC, Levine TE, Giannelis EP, Mayer JW, Nastasi M. Ion-beam-induced epitaxial crystallization of sol-gel zirconia thin films on yttria-stabilized zirconia Philosophical Magazine Letters. 73: 359-368. |
0.345 |
|
| 1996 |
Strane JW, Lee SR, Stein HJ, Picraux ST, Watanabe JK, Mayer JW. Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy Journal of Applied Physics. 79: 637-646. |
0.354 |
|
| 1996 |
Atzmon Z, Bair AE, Alford TL, Chandrasekhar D, Smith DJ, Mayer JW. Heteroepitaxial Si1-x-yGexCy layer growth on (100)Si by atmospheric pressure chemical vapor deposition Materials Research Society Symposium - Proceedings. 399: 117-122. |
0.374 |
|
| 1995 |
Atzmon Z, Bair AE, Alford TL, Chandrasekhar D, Smith DJ, Mayer JW. Heteroepitaxial Si 1-x-yGe xC y layer growth on (100)Si by atmospheric pressure chemical vapor deposition Mrs Proceedings. 399: 117-122. DOI: 10.1557/Proc-399-117 |
0.586 |
|
| 1995 |
Soave RJ, Tasker GW, Then AM, Mayer JW, Shacham-Diamand Y. A novel technique for characterizing the surface coverage of thin-film chemical vapor deposition in ultra-high-aspect-ratio microstructures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1027-1031. DOI: 10.1116/1.579578 |
0.394 |
|
| 1995 |
Wang SQ, Hong S, White A, Hoener C, Mayer JW. Interfacial reactions in the SiO2/Ru and SiO2/Ru/Al- Si structures Journal of Applied Physics. 77: 5751-5762. DOI: 10.1063/1.359220 |
0.335 |
|
| 1995 |
Atzmon Z, Bair AE, Alford TL, Chandrasekhar D, Smith DJ, Mayer JW. Wet oxidation of amorphous and crystalline Si1-x-yGexCy alloys grown on (100)Si substrates Applied Physics Letters. 66: 2244-2246. DOI: 10.1063/1.113180 |
0.602 |
|
| 1995 |
Mayer JW, Sigmon TW. Low power electronics and pulsed laser processing Materials Chemistry & Physics. 42: 129-133. DOI: 10.1016/0254-0584(95)01545-0 |
0.34 |
|
| 1995 |
Levine TE, Yu N, Kodali P, Walter KC, Nastasi M, Tesmer JR, Maggiore CJ, Mayer JW. In situ ion-beam analysis and modification of sol-gel zirconia thin films Nuclear Inst. and Methods in Physics Research, B. 106: 597-601. DOI: 10.1016/0168-583X(95)00816-0 |
0.351 |
|
| 1995 |
Bair AE, Atzmon Z, Russell SW, Alford TL, Mayer JW, Barbour JC. Quantification of carbon in Si1-x-yGexCy with uniform profiles Nuclear Inst. and Methods in Physics Research, B. 103: 339-346. DOI: 10.1016/0168-583X(95)00614-1 |
0.536 |
|
| 1995 |
Jasper C, Morton R, Lau SS, Haynes TE, Garcia R, Mayer JW. Inversion of dose rate effects in ion implanted gallium arsenide in the low dose regime Nuclear Inst. and Methods in Physics Research, B. 96: 294-297. DOI: 10.1016/0168-583X(94)00503-6 |
0.34 |
|
| 1995 |
Martin BC, Tracy CJ, Mayer JW, Hendrickson LE. A comparative study of Hillock formation in aluminum films Thin Solid Films. 271: 64-68. DOI: 10.1016/0040-6090(95)06941-0 |
0.41 |
|
| 1995 |
Alford TL, Jian L, Mayer JW, Shi-Qing W. Copper-based metallization and interconnects for ultra-large-scale integration applications Thin Solid Films. 262. DOI: 10.1016/0040-6090(95)06624-1 |
0.458 |
|
| 1995 |
Adams D, Alford TL, Theodore ND, Russell SW, Spreitzera RL, Mayer JW. Passivation of Cu via refractory metal nitridation in an ammonia ambient Thin Solid Films. 262: 199-208. DOI: 10.1016/0040-6090(94)05805-9 |
0.58 |
|
| 1995 |
Atzmon Z, Bair AE, Alford TL, Chandrasekhar D, Smith DJ, Mayer JW. Wet oxidation of amorphous and crystalline Si1-x-yGexCy alloys grown on (100)Si substrates Applied Physics Letters. 2241. |
0.318 |
|
| 1994 |
Levine TE, Nastasi M, Alford TL, Suchicital C, Russell S, Luptak K, Pizziconi V, Mayer JW. Ion Beam Mixing of Titanium Overlayers with Hydroxyapatite Substrates Mrs Proceedings. 356. DOI: 10.1557/Proc-356-791 |
0.595 |
|
| 1994 |
Alford T, Russell SW, Pizziconi V, Mayer JW, Levine TE, Nastasi M, Cotell CM, Auyeung RCY. Ion Mixing of Pulsed Laser Deposited Hydroxylapatite (HA) Mrs Proceedings. 354: 15-20. DOI: 10.1557/Proc-354-15 |
0.558 |
|
| 1994 |
Spreitzer RL, Rafalski SA, Adams D, Russell SW, Atzmon Z, Li J, Alford T, Mayer JW. Interfacial Reactions of Copper/Refractory Alloy and Bilayer Films on Si0 2 Mrs Proceedings. 337: 631-636. DOI: 10.1557/Proc-337-631 |
0.612 |
|
| 1994 |
Atzmon Z, Sharma R, Russell SW, Mayer JW. Kinetics of copper grain growth during nitridation of Cu-Cr and Cu-Ti thin films by in situ TEM Materials Research Society Symposium - Proceedings. 337: 625-630. DOI: 10.1557/Proc-337-625 |
0.32 |
|
| 1994 |
Rafalski SA, Spreitzer RL, Russell SW, Alford T, Li J, Moinpour M, Moghadam F, Mayer JW. Enhanced Adhesion of Copper Films to SiO 2 , PSG and BPSG by Refractory Metal Additions Mrs Proceedings. 337: 613-618. DOI: 10.1557/Proc-337-613 |
0.538 |
|
| 1994 |
Adams D, Spreitzer RL, Russell SW, Theodore ND, Alford T, Mayer JW. Effectiveness of nitride diffusion barriers in a self-encapsulated copper-based metallization Mrs Proceedings. 337: 231-236. DOI: 10.1557/Proc-337-231 |
0.484 |
|
| 1994 |
Atzmon Z, Sharma R, Mayer JW, Hong SQ. In situ transmission electron microscopy study during NH3 ambient annealing of Cu-Cr thin films Materials Research Society Symposium Proceedings. 317: 245-250. DOI: 10.1557/Proc-317-245 |
0.367 |
|
| 1994 |
Xu M, Atzmon Z, Schroer A, Wilkens B, Mayer JW. Visualization of ion channeling of (100)Si and Si1-xGex epitaxial grown layers on silicon Materials Research Society Symposium Proceedings. 316: 679-684. DOI: 10.1557/Proc-316-679 |
0.452 |
|
| 1994 |
Strane JW, Stein HJ, Lee SR, Picraux ST, Watanabe JK, Mayer JW. Precipitation and relaxation in strained Si1-yCy/Si heterostructures Journal of Applied Physics. 76: 3656-3668. DOI: 10.1063/1.357429 |
0.398 |
|
| 1994 |
Atzmon Z, Eizenberg M, Shacham-Diamand Y, Mayer JW, Schäffler F. Low-dose implantation of Sb in Si1-xGex epitaxial layers: Correlation between electrical properties and radiation damage Journal of Applied Physics. 75: 377-381. DOI: 10.1063/1.356991 |
0.378 |
|
| 1994 |
Atzmon Z, Eizenberg M, Shacham-Diamand Y, Mayer JW, Schäffler F. Solid-phase epitaxial regrowth of Sb-implanted Si1-xGe x strained layers: Kinetics and electrical properties Journal of Applied Physics. 75: 3936-3943. DOI: 10.1063/1.356013 |
0.362 |
|
| 1994 |
Atzmon Z, Bair AE, Jaquez EJ, Mayer JW, Chandrasekhar D, Smith DJ, Hervig RL, Robinson M. Chemical vapor deposition of heteroepitaxial Si1-x-yGe xCy films on (100)Si substrates Applied Physics Letters. 65: 2559-2561. DOI: 10.1063/1.112635 |
0.423 |
|
| 1994 |
Nastasi M, Mayer JW. Ion beam mixing in metallic and semiconductor materials Materials Science and Engineering R. 12: 1-52. DOI: 10.1016/0927-796X(94)90005-1 |
0.351 |
|
| 1994 |
Adams D, Spreitzer RL, Russell SW, Theodore ND, Alford TL, Mayer JW. Effectiveness of nitride diffusion barriers in a self-encapsulated copper-based metallization Materials Research Society Symposium - Proceedings. 337: 231-236. |
0.324 |
|
| 1994 |
Spreitzer RL, Rafalski SA, Adams D, Russell SW, Atzmon Z, Li J, Alford TL, Mayer JW. Interfacial reactions of copper/refractory alloy and bilayer films on SiO2 Materials Research Society Symposium - Proceedings. 337: 631-636. |
0.309 |
|
| 1994 |
Strane JW, Picraux ST, Stein HJ, Lee SR, Candelaria J, Theodore D, Mayer JW. Stability and precipitation kinetics in Si1-yCy/Si and Si1-x-yGexCy/Si heterostructures prepared by solid phase epitaxy Materials Research Society Symposium Proceedings. 321: 467-472. |
0.307 |
|
| 1993 |
Strane JW, Picraux ST, Stein HJ, Lee SR, Candelaria J, Theodore D, Mayer JW. Stability And Precipitation Kinetics In Si 1-y C y /Si and Si 1-x-y Ge x C/Si Heterostructures Prepared by Solid Phase Epitaxy Mrs Proceedings. 321: 467. DOI: 10.1557/Proc-321-467 |
0.376 |
|
| 1993 |
Sharma R, Atzmon Z, Mayer J, Hong SQ. In Situ Studies of Nitridation of Cu/Ti Thin Films Using Environmental Cell in Transmission Electron Microscopy Mrs Proceedings. 317. DOI: 10.1557/Proc-317-251 |
0.325 |
|
| 1993 |
Levine TE, Giannelis EP, Kodali P, Tesmer J, Nastasi M, Mayer JW. Ion-Irradiation-Induced Densification of Zirconia Sol -Gel Thin Films Mrs Proceedings. 316. DOI: 10.1557/Proc-316-99 |
0.394 |
|
| 1993 |
Levine TE, Revesz P, Mayer JW, Giannelis EP. Tribomechanical Properties of Ion-Beam-Densified Sol-Gel Zirconia Thin Films on Cubic Zirconia Mrs Proceedings. 308. DOI: 10.1557/Proc-308-635 |
0.392 |
|
| 1993 |
Strane JW, Edwards WJ, Mayer JW, Stein HS, Lee R, Doyle BL, Picraux ST. Metastable SiC and SiGeC alloys by carbon implantation and solid phase epitaxy Materials Research Society Symposium Proceedings. 280: 609-612. DOI: 10.1557/Proc-280-609 |
0.411 |
|
| 1993 |
Zaleski MA, Jervis TR, Mayer JW. Tribology and Hardness of Excimer-Laser-Processed Titanium Layers on Cubic Zirconia Journal of the American Ceramic Society. 76: 356-361. DOI: 10.1111/J.1151-2916.1993.Tb03792.X |
0.354 |
|
| 1993 |
Levine TE, Keddie JL, Revesz P, Mayer JW, Giannelis EP. Ion-Beam-Induced Densification of Zirconia Sol-Gel Thin Films Journal of the American Ceramic Society. 76: 1369-1372. DOI: 10.1111/J.1151-2916.1993.Tb03769.X |
0.41 |
|
| 1993 |
Strane JW, Stein HJ, Lee SR, Doyle BL, Picraux ST, Mayer JW. Metastable SiGeC formation by solid phase epitaxy Applied Physics Letters. 63: 2786-2788. DOI: 10.1063/1.110334 |
0.428 |
|
| 1992 |
Purser RG, Strane JW, Mayer JW. Electrical Contacts to Metastable Ge x Si 1−x Using Pd 2 Si as a Transport Layer Mrs Proceedings. 281. DOI: 10.1557/Proc-281-635 |
0.411 |
|
| 1992 |
Russell SW, Li J, Strane JW, Mayer JW. The Effect of Copper on the Titanium-Silicon Dioxide Reaction and the Implications for Self-Encapsulating, Self-Adhering Metallization Lines Mrs Proceedings. 265: 205. DOI: 10.1557/Proc-265-205 |
0.439 |
|
| 1992 |
Hong SQ, Hong QZ, Mayer JW. Regrowth rates and dopant activation of Sb+‐implanted Si‐Ge alloys Journal of Applied Physics. 72: 3821-3823. DOI: 10.1063/1.352282 |
0.431 |
|
| 1992 |
Yoshitaka T, Jian L, Russell SW, Mayer JW. Thermal and ion beam induced thin film reactions in Cu-Al bilayers Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 64: 130-133. DOI: 10.1016/0168-583X(92)95451-V |
0.37 |
|
| 1992 |
Theodore ND, Alford TL, Barbour JC, Carter CB, Mayer JW. TEM characterization of yttrium silicide layers synthesized by ion implantation Applied Physics a Solids and Surfaces. 54: 527-532. DOI: 10.1007/Bf00324334 |
0.422 |
|
| 1992 |
Theodore ND, Alford TL, Carter CB, Mayer JW, Cheung NW. TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon Applied Physics a Solids and Surfaces. 54: 124-131. DOI: 10.1007/BF00323898 |
0.479 |
|
| 1991 |
Atzmon Z, Eizenberg M, Revesz P, Mayer JW, Schäffler F. Sb Implantation in Si1–xGex/Si(100) Structures Mrs Proceedings. 235. DOI: 10.1557/Proc-235-247 |
0.464 |
|
| 1991 |
Norton MG, Kotula PG, Li J, Mckernan S, Cracknell KPB, Carter CB, Mayer JW. Growth and Microstructure of Aluminum Nitride Thin Films Mrs Proceedings. 226: 209. DOI: 10.1557/Proc-226-209 |
0.364 |
|
| 1991 |
Norton MG, Scarfone C, Li J, Carter CB, Mayer JW. Epitaxy of barium titanate thin films grown on MgO by pulsed-laser ablation Journal of Materials Research. 6: 2022-2025. DOI: 10.1557/Jmr.1991.2022 |
0.3 |
|
| 1991 |
Fleischer EL, Norton MG, Zaleski MA, Hertl W, Carter CB, Mayer JW. Microstructure of hardened and softened zirconia after xenon implantation Journal of Materials Research. 6: 1905-1912. DOI: 10.1557/Jmr.1991.1905 |
0.34 |
|
| 1991 |
Keddie JL, Li J, Mayer JW, Giannelis EP. Effect of Nitridation Rate on the Composition and Conductivity of Titanium Nitride Films Prepared from Sol-Gel Titania Journal of the American Ceramic Society. 74: 2937-2940. DOI: 10.1111/J.1151-2916.1991.Tb06869.X |
0.339 |
|
| 1991 |
Hong SQ, Comrie CM, Russell SW, Mayer JW. Phase formation in Cu‐Si and Cu‐Ge Journal of Applied Physics. 70: 3655-3660. DOI: 10.1063/1.349213 |
0.315 |
|
| 1991 |
Norton MG, Fleischer EL, Hertl W, Carter CB, Mayer JW. Transmission-electron microscopy study of ion-beam implanted single-crystal ceramics Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 59: 1215-1218. DOI: 10.1016/0168-583X(91)95796-G |
0.375 |
|
| 1990 |
Allen LH, Mayer JW, Tu KN, Feldman LC. Kinetic study of Si recrystallization in the reaction between Au and polycrystalline-Si films. Physical Review. B, Condensed Matter. 41: 8213-8220. PMID 9993144 DOI: 10.1103/Physrevb.41.8213 |
0.317 |
|
| 1990 |
Phillips JR, Revesz P, Olowolafe JO, Mayer JW. Thermal Stability of CoSi2 on Single Crystal and Polycrystalline Silicon Mrs Proceedings. 181. DOI: 10.1557/PROC-181-159 |
0.376 |
|
| 1990 |
Fleischer EL, Hertl W, Alford TL, Børgesen P, Mayer JW. The effect of ion induced damage on the hardness, wear, and friction of zirconia Journal of Materials Research. 5: 385-391. DOI: 10.1557/Jmr.1990.0385 |
0.513 |
|
| 1990 |
Alford TL, Bo/rgesen P, Mayer JW, Lilienfeld DA. Low‐temperature ion mixing of yttrium and silicon Journal of Applied Physics. 67: 1288-1292. DOI: 10.1063/1.345678 |
0.507 |
|
| 1990 |
Alford TL, Theodore ND, Fleischer EL, Mayer JW, Carter CB, Bo/rgesen P, Ullrich BM, Cheung NW, Wong H. Observation of multiple precipitate layers in MeV Au++‐implanted silicon Applied Physics Letters. 56: 1796-1798. DOI: 10.1063/1.103103 |
0.578 |
|
| 1989 |
Kobayashi N, Kumashiro Y, Revesz P, Li J, Mayer JW. Thermal and Ion Bean Induced Reactions in Ni on BP Mrs Proceedings. 162: 595. DOI: 10.1557/Proc-162-595 |
0.38 |
|
| 1989 |
Fleischer EL, Herd W, Alford TL, Børgesen P, Revesz P, Mayer JW. The Effect of Ion Induced Damage on the Mechanical Properties of Zirconia Mrs Proceedings. 157. DOI: 10.1557/PROC-157-537 |
0.498 |
|
| 1989 |
Yu AJ, Mayer JW, Eaglesham DJ, Poate JM. Ion beam induced epitaxy of deposited amorphous Si and Si-Ge films Applied Physics Letters. 54: 2342-2344. DOI: 10.1063/1.101523 |
0.354 |
|
| 1988 |
Liu JC, Mayer JW. Ion Irradiation Induced Grain Growth in Metal Thin Films Mrs Proceedings. 100. DOI: 10.1557/Proc-100-357 |
0.348 |
|
| 1988 |
Comrie CM, Liu JC, Hung LS, Mayer JW. Reordering of polycrystalline Pd2Si on epitaxial Pd2Si Journal of Applied Physics. 63: 2402-2405. DOI: 10.1063/1.341059 |
0.315 |
|
| 1987 |
Fleischer EL, Mayer JW, Hirvonen J. Ion Beam Mixing of Au-Ti Mrs Proceedings. 93. DOI: 10.1557/Proc-93-227 |
0.395 |
|
| 1987 |
Phillips JR, Zheng L, Mayer JW. Degradation of Micron-Sized Silicide Lines on Polycrystalline Silicon Mrs Proceedings. 106. DOI: 10.1557/Proc-106-155 |
0.366 |
|
| 1987 |
Feldman LC, Mayer JW, Grasserbauer M. Fundamentals of surface and thin film analysis : North Holland, Amsterdam, 1986 (ISBN 0-444-00989-2). xviii + 352 pp. Price Dfl. 125.00. Analytica Chimica Acta. 199: 288. DOI: 10.1016/S0003-2670(00)82855-X |
0.3 |
|
| 1986 |
Batson PE, Kavanagh KL, Woodall JM, Mayer JW. Electron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interface. Physical Review Letters. 57: 2729-2732. PMID 10033846 DOI: 10.1103/Physrevlett.57.2729 |
0.512 |
|
| 1986 |
Romanelli JF, Mayer JW, Kramer EJ, Russell TP. Rutherford backscattering spectrometry studies of iodine diffusion in polyimide Journal of Polymer Science Part B: Polymer Physics. 24: 263-277. DOI: 10.1002/Polb.1986.090240205 |
0.31 |
|
| 1986 |
KAVANAGH KL, MAYER JW, MAGEE CW, SHEETS J, TONG J, KIRCHNER PD, WOODALL JM, HALLER I. ChemInform Abstract: The Polycrystalline-Si Contact to GaAs. Chemischer Informationsdienst. 17. DOI: 10.1002/Chin.198640331 |
0.591 |
|
| 1985 |
Saris FW, Hung LS, Nastasi M, Mayer JW. Stability Of Thin Film Amorphous Metal Alloys Mrs Proceedings. 54. DOI: 10.1557/Proc-54-81 |
0.411 |
|
| 1985 |
Barbour JC, Batson PE, Mayer JW. High Spatial-Resolution Analysis of Lateral Suicide Formation Mrs Proceedings. 54. DOI: 10.1557/Proc-54-29 |
0.409 |
|
| 1985 |
Hung LS, Mayer JW. Ion-Beam Induced Silicide Formation: Markers and Moving Species Mrs Proceedings. 54: 197. DOI: 10.1557/Proc-54-197 |
0.421 |
|
| 1985 |
Hung LS, Wang SQ, Mayer JW, Saris FW. Reaction Of Amorphous And Crystalline Alloys With Silicon Mrs Proceedings. 54. DOI: 10.1557/Proc-54-159 |
0.403 |
|
| 1985 |
Colgan EG, Mayer JW. Sequence Of Phase Formation In Ni/Ai Contrasted With Ni/Si Mrs Proceedings. 54: 121. DOI: 10.1557/Proc-54-121 |
0.329 |
|
| 1985 |
Mayer JW. Regrowth of Implanted-Amorphous Si: Furnace to Laser Annealing Mrs Proceedings. 45. DOI: 10.1557/Proc-45-5 |
0.41 |
|
| 1985 |
Chen SH, Zheng LR, Carter CB, Mayer JW. Transmission electron microscopy studies on the lateral growth of nickel silicides Journal of Applied Physics. 57: 258-263. DOI: 10.1063/1.335482 |
0.441 |
|
| 1985 |
Brat T, Eizenberg M, Fastow R, Palmstrom CJ, Mayer JW. Pulsed proton-beam annealing of Ir and IrxV100-x thin films on silicon Journal of Applied Physics. 57: 264-269. DOI: 10.1063/1.334798 |
0.366 |
|
| 1985 |
Chen SH, Elgat Z, Barbour JC, Zheng LR, Mayer JW, Carter CB. High-resolution electron microscopy studies of Ni silicides formed in lateral diffusion couples Ultramicroscopy. 18: 297-303. DOI: 10.1016/0304-3991(85)90147-0 |
0.337 |
|
| 1985 |
Nastasi M, Fastow R, Gyulai J, Mayer JW, Plimpton SJ, Wolf ED, Ullrich BM. Ion induced reactions in Fe/Al bilayers by pulsed-beam ion irradiation and Xe implantation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 7: 585-590. DOI: 10.1016/0168-583X(85)90438-0 |
0.346 |
|
| 1984 |
Palmrøm CJ, Kavanagh KL, Hollis MJ, Mukherjee SD, Mayer JW. Improved Uniformity of Reacted GaAs Contacts by Interface Mixing Mrs Proceedings. 37. DOI: 10.1557/Proc-37-473 |
0.577 |
|
| 1984 |
Yamada I, Palmstrøm CJ, Kennedy E, Mayer JW, Inokawa H, Takagi T. Epitaxy of Aluminium Films on Semiconductors by Ionized Cluster Beam Mrs Proceedings. 37. DOI: 10.1557/Proc-37-401 |
0.467 |
|
| 1984 |
Hung LS, Chen SH, Mayer JW. Low Temperature Reordering of Implanted Amorphous Si with Al Surface Layers Mrs Proceedings. 37: 337. DOI: 10.1557/Proc-37-337 |
0.422 |
|
| 1984 |
Thompson MO, Galvin GJ, Mayer JW, Peercy PS, Poate JM, Jacobson DC, Cullis AG, Chew NG. Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation Physical Review Letters. 52: 2360-2363. DOI: 10.1103/Physrevlett.52.2360 |
0.406 |
|
| 1984 |
Grunes LA, Barbour JC, Hung LS, Mayer JW, Ritsko JJ. Electron energy loss spectroscopy of ion irradiated ni-al alloys Journal of Applied Physics. 56: 168-176. DOI: 10.1063/1.333748 |
0.369 |
|
| 1984 |
Chen SH, Zheng LR, Barbour JC, Zingu EC, Hung LS, Carter CB, Mayer JW. Lateral-diffusion couples studied by transmission electron microscopy Materials Letters. 2: 469-476. DOI: 10.1016/0167-577X(84)90075-2 |
0.301 |
|
| 1984 |
Hewett CA, Lac SS, Fastow R, Mayer JW. Pulsed ion beam annealing of TiAu alloys Physica Status Solidi (a). 84: 49-54. DOI: 10.1002/Pssa.2210840106 |
0.36 |
|
| 1983 |
Zheng LR, Zingu E, Mayer JW. Lateral Silicide Growth Mrs Proceedings. 25: 75. DOI: 10.1557/Proc-25-75 |
0.44 |
|
| 1983 |
Zingu EC, Mayer JW. Grain boundary Diffusion of Ni through Pd 2 Si Mrs Proceedings. 25: 45. DOI: 10.1557/Proc-25-45 |
0.359 |
|
| 1983 |
Hung LS, Chen SH, Mayer JW. Interaction of Al Films on Single Crystal Si Substrates Induced by Ion Irradiation and Post-Anneal Mrs Proceedings. 25: 253. DOI: 10.1557/Proc-25-253 |
0.439 |
|
| 1983 |
Barbour J, Grunes L, Mayer J. A Comparison of Electron Energy Loss Spectroscopy and Electron Diffraction for Polycrystalline and Xe+ Irradiated Nickel Silicides Mrs Proceedings. 25. DOI: 10.1557/Proc-25-235 |
0.353 |
|
| 1983 |
Grunest LA, Barbour JC, Hung LS, Mayer JW, Ritsko JJ. Electron Energy Loss Spectroscopy of Polycrystalline and Ion Irradiated Ni-Al Alloys Mrs Proceedings. 25: 229. DOI: 10.1557/Proc-25-229 |
0.365 |
|
| 1983 |
Galvin GJ, Hung LS, Mayer JW, Nastasi M. Applications of Energy Beams in Material and Device Processing Mrs Proceedings. 23: 25. DOI: 10.1557/Proc-23-25 |
0.407 |
|
| 1983 |
Palmström CJ, Gyulai J, Mayer JW. Phase separation in interactions of tantalum–chromium alloy on Si Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 1: 452-454. DOI: 10.1116/1.571945 |
0.316 |
|
| 1983 |
Woodall JM, Pettit GD, Jackson TN, Lanza C, Kavanagh KL, Mayer JW. Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces Physical Review Letters. 51: 1783-1786. DOI: 10.1103/Physrevlett.51.1783 |
0.521 |
|
| 1983 |
Hung LS, Nastasi M, Gyulai J, Mayer JW. Ion‐induced amorphous and crystalline phase formation in Al/Ni, Al/Pd, and Al/Pt thin films Applied Physics Letters. 42: 672-674. DOI: 10.1063/1.94068 |
0.364 |
|
| 1983 |
Hung LS, Gyulai J, Mayer JW, Lau SS, Nicolet MA. Kinetics of TiSi2 formation by thin Ti films on Si Journal of Applied Physics. 54: 5076-5080. DOI: 10.1063/1.332781 |
0.462 |
|
| 1983 |
Ottaviani G, Tu K, Thompson RD, Mayer JW, Lau SS. Interaction of Pd–Er alloys with silicon Journal of Applied Physics. 54: 4614-4622. DOI: 10.1063/1.332617 |
0.392 |
|
| 1983 |
Hung LS, Gyulai J, Mayer JW. Ion‐induced reaction of Ni–Au bilayers both on Si and on SiO2 Journal of Applied Physics. 54: 5750-5754. DOI: 10.1063/1.331798 |
0.443 |
|
| 1983 |
Peercy P, Calvin G, Thompson M, Mayer J, Hammond R. Measurements of the melt dynamics in laser annealed semiconductors Physica B+C. 116: 558-563. DOI: 10.1016/0378-4363(83)90307-8 |
0.349 |
|
| 1982 |
Zheng LR, Hung LS, Mayer JW. Lateral Diffusion of Platinum Through Pt 2 Si in Pt/Si Couples Mrs Proceedings. 18: 207. DOI: 10.1557/Proc-18-207 |
0.344 |
|
| 1982 |
Chen LJ, Hung LS, Mayer JW, Baglin JEE. Pulsed Proton Beam Annealing of Co-Si Thin Film Systems Mrs Proceedings. 13: 709. DOI: 10.1557/Proc-13-709 |
0.398 |
|
| 1982 |
Fastow RM, Gyulai J, Mayer JW. Transient Conductivity Measurements in Pulsed Ion Beam Melted Silicon Mrs Proceedings. 13: 69. DOI: 10.1557/Proc-13-69 |
0.308 |
|
| 1982 |
Gyulai J, Fastow R, Kavanagh K, Thompson MO, Palmstrom CJ, Hewett CA, Mayer JW. Crystallization of Amorphous Silicon Films by Pulsed Ion Beam Annealing Mrs Proceedings. 13. DOI: 10.1557/PROC-13-455 |
0.623 |
|
| 1982 |
Galvin GJ, Thompson MO, Mayer JW, Hammond RB, Paulter N, Peercy PS. Measurement of the Velocity of the Crystal-Liquid Interface in Pulsed Laser Annealing of Si Physical Review Letters. 48: 33-36. DOI: 10.1103/Physrevlett.48.33 |
0.349 |
|
| 1982 |
Ottaviani G, Tu KN, Chu WK, Hung LS, Mayer JW. NiSi formation at the silicide/Si interface on the NiPt/Si system Journal of Applied Physics. 53: 4903-4906. DOI: 10.1063/1.331323 |
0.438 |
|
| 1982 |
Chen LJ, Hung LS, Mayer JW. Transmission electron microscope study of ion beam induced interfacial reactions in molybdenum thin films on silicon Applications of Surface Science. 202-208. DOI: 10.1016/0378-5963(82)90067-8 |
0.448 |
|
| 1982 |
Chen LJ, Mayer JW, Tu KN, Sheng TT. Lattice imaging of silicide-silicon interfaces Thin Solid Films. 93: 91-97. DOI: 10.1016/0040-6090(82)90094-3 |
0.414 |
|
| 1982 |
Mäenpää M, Hung LS, Tsaur BY, Mayer JW, Nicolet MA, Lau SS, Sadana DK, Tseng WF. Crystallization investigation of NiSi2 thin films Journal of Electronic Materials. 11: 289-301. DOI: 10.1007/Bf02654673 |
0.46 |
|
| 1981 |
Thompson MO, Galvin GJ, Mayer JW, Hammond RB, Paulter N, Peercy PS. Transient Conductance Measurements During Pulsed Laser Annealing Mrs Proceedings. 4. DOI: 10.1557/Proc-4-209 |
0.383 |
|
| 1981 |
Chen LJ, Mayer JW, Tu KN, Sheng TT. Lattice Imaging of Silicide-Silicon Interfaces Mrs Proceedings. 10: 93. DOI: 10.1557/Proc-10-93 |
0.413 |
|
| 1981 |
Ottaviani G, Tu K, Mayer JW. Barrier heights and silicide formation for Ni, Pd, and Pt on silicon Physical Review B. 24: 3354-3359. DOI: 10.1103/Physrevb.24.3354 |
0.403 |
|
| 1981 |
Tsaur BY, Lau SS, Mayer JW. Ion-beam-induced metastable phases in the Au-Co system Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 44: 95-108. DOI: 10.1080/01418638108222370 |
0.414 |
|
| 1981 |
Mäenpää M, Hung LS, Grimaldi MG, Suni I, Mayer JW, Nicolet M-, Lau SS. GeSi heterostructures by crystallization of amorphous layers Thin Solid Films. 82: 347-356. DOI: 10.1016/0040-6090(81)90478-8 |
0.404 |
|
| 1981 |
Lau SS, Tsaur BY, Allmen Mv, Mayer JW, Stritzker B, White CW, Appleton B. Ion-beam mixing of metal-semiconductor eutectic systems Nuclear Instruments and Methods. 97-105. DOI: 10.1016/0029-554X(81)90676-5 |
0.401 |
|
| 1981 |
Tsaur BY, Lau SS, Hung LS, Mayer JW. Microalloying by ion-beam mixing Nuclear Instruments and Methods. 182: 67-77. DOI: 10.1016/0029-554X(81)90672-8 |
0.34 |
|
| 1980 |
Lau SS, Mäenpää M, Mayer JW. Beam Induced Reactions in Metal-Film Systems Mrs Proceedings. 1: 547. DOI: 10.1557/Proc-1-547 |
0.308 |
|
| 1980 |
Hung LS, Lau SS, Allmen Mv, Mayer JW, Ullrich BM, Baker JE, Williams P, Tseng WF. Epitaxial growth of Si deposited on (100) Si Applied Physics Letters. 37: 909-911. DOI: 10.1063/1.91855 |
0.441 |
|
| 1980 |
Tsaur BY, Mayer JW, Graczyk JF, Tu K. Ion-beam-induced metastable Pt2Si3 phase. II. Kinetics and morphology Journal of Applied Physics. 51: 5334-5341. DOI: 10.1063/1.327447 |
0.366 |
|
| 1980 |
Tsaur BY, Mayer JW, Tu K. Ion‐beam induced metastable Pt2Si3 phase. I. Formation, structure, and properties Journal of Applied Physics. 51: 5326-5333. DOI: 10.1063/1.327446 |
0.394 |
|
| 1980 |
Mayer JW, Tsaur BY, Lau SS, Hung LS. ION-BEAM-INDUCED REACTIONS IN METAL-SEMICONDUCTOR AND METAL-METAL THIN FILM STRUCTURES Nuclear Instruments and Methods. 182: 1-13. DOI: 10.1016/0029-554X(81)90666-2 |
0.443 |
|
| 1979 |
Wittmer M, Roth J, Mayer JW. The Influence of Noble Gas Atoms on the Epitaxial Growth of Implanted and Sputtered Amorphous Silicon Journal of the Electrochemical Society. 126: 1247-1252. DOI: 10.1149/1.2129250 |
0.361 |
|
| 1979 |
Koji T, Tseng WF, Mayer JW, Suganuma T. Effects of CVD oxide on phosphorus-diffused emitters in silicon Ieee Transactions On Electron Devices. 26: 1310-1312. DOI: 10.1109/T-Ed.1979.19599 |
0.311 |
|
| 1979 |
Kennedy EF, Lau SS, Golecki I, Mayer JW, Tseng W, Minnucci JA, Kirkpatrick AR. Pulsed electron beam annealing of ion implanted Si layers Radiation Effects. 43: 31-36. DOI: 10.1080/00337577908226420 |
0.455 |
|
| 1979 |
Allmen Mv, Lau SS, Mayer JW, Tseng WF. Solid‐state epitaxial growth of deposited Si films Applied Physics Letters. 35: 280-282. DOI: 10.1063/1.91071 |
0.465 |
|
| 1979 |
Lau SS, Matteson S, Mayer JW, Revesz P, Gyulai J, Roth J, Sigmon TW, Cass T. Improvement of crystalline quality of epitaxial Si layers by ion‐implantation techniques Applied Physics Letters. 34: 76-78. DOI: 10.1063/1.90564 |
0.468 |
|
| 1979 |
Chapman GE, Lau SS, Matteson S, Mayer JW. Silicide formation by high-dose Si+-ion implantation of Pd Journal of Applied Physics. 50: 6321-6327. DOI: 10.1063/1.325773 |
0.467 |
|
| 1979 |
Tsaur BY, Liau ZL, Mayer JW. Formation of Si-enriched metastable compounds in the Pt-Si system using ion bombardment and post annealing Physics Letters A. 71: 270-272. DOI: 10.1016/0375-9601(79)90184-1 |
0.45 |
|
| 1979 |
Golecki I, Chapman G, Lau S, Tsaur B, Mayer J. Ion-beam induced epitaxy of silicon Physics Letters A. 71: 267-269. DOI: 10.1016/0375-9601(79)90183-X |
0.459 |
|
| 1979 |
Golecki I, Kennedy EF, Lau SS, Mayer JW, Tseng WF, Eckardt RC, Wagner RJ. Heteroepitaxy of a deposited amorphous germanium layer on a silicon substrate by laser annealing Thin Solid Films. 57: L13-L15. DOI: 10.1016/0040-6090(79)90435-8 |
0.41 |
|
| 1979 |
Tsaur BY, Lau SS, Liau ZL, Mayer JW. Ion-beam-induced intermixing of surface layers☆ Thin Solid Films. 63: 31-36. DOI: 10.1016/0040-6090(79)90095-6 |
0.439 |
|
| 1979 |
Koji T, Tseng WF, Mayer JW, Suganuma T. Double-step annealing and ambient effects on phosphorus implanted emitters in silicon Solid-State Electronics. 22: 335-342. DOI: 10.1016/0038-1101(79)90043-1 |
0.412 |
|
| 1979 |
Revesz P, Mayer JW. Regrowth Behaviour of Ge Implanted Si Physica Status Solidi (a). 54: 513-516. DOI: 10.1002/Pssa.2210540210 |
0.455 |
|
| 1979 |
WITTMER M, ROTH J, MAYER JW. ChemInform Abstract: THE INFLUENCE OF NOBLE GAS ATOMS ON THE EPITAXIAL GROWTH OF IMPLANTED AND SPUTTERED AMORPHOUS SILICON Chemischer Informationsdienst. 10. DOI: 10.1002/Chin.197943003 |
0.362 |
|
| 1978 |
Tseng WF, Mayer JW, Campisano SU, Foti G, Rimini E. Grain size dependence in a self‐implanted silicon layer on laser irradiation energy density Applied Physics Letters. 32: 824-826. DOI: 10.1063/1.89938 |
0.32 |
|
| 1978 |
Csepregi L, Kennedy EF, Mayer JW, Sigmon TW. Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si Journal of Applied Physics. 49: 3906-3911. DOI: 10.1063/1.325397 |
0.45 |
|
| 1978 |
Lau SS, Mayer JW, Tu KN. Interactions in the Co/Si thin-film system. I. Kinetics Journal of Applied Physics. 49: 4005-4010. DOI: 10.1063/1.325359 |
0.406 |
|
| 1978 |
Liau ZL, Mayer JW, Brown WL, Poate JM. Sputtering of PtSi Journal of Applied Physics. 49: 5295-5305. DOI: 10.1063/1.324431 |
0.38 |
|
| 1978 |
Wittmer M, Roth J, Revesz P, Mayer JW. Epitaxial regrowth of Ne‐ and Kr‐implanted amorphous silicon Journal of Applied Physics. 49: 5207-5212. DOI: 10.1063/1.324416 |
0.415 |
|
| 1978 |
Revesz P, Wittmer M, Roth J, Mayer JW. Epitaxial regrowth of Ar‐implanted amorphous silicon Journal of Applied Physics. 49: 5199-5206. DOI: 10.1063/1.324415 |
0.442 |
|
| 1978 |
Tseng WF, Lau SS, Mayer JW. Formation of stacking faults and dislocations in phosphorus diffused silicon Physics Letters A. 68: 93-94. DOI: 10.1016/0375-9601(78)90768-5 |
0.349 |
|
| 1978 |
Finstad TG, Mayer JW, Nicolet M-. The formation of NiSi from Ni2Si studied with a platinum marker Thin Solid Films. 51: 391-394. DOI: 10.1016/0040-6090(78)90303-6 |
0.456 |
|
| 1978 |
Liau ZL, Lau SS, Nicolet MA, Mayer JW, Blattner RJ, Williams P, Evans CA. Kinetic aspects of solid-phase epitaxial growth of amorphous Si Nuclear Instruments and Methods. 149: 623-627. DOI: 10.1016/0029-554X(78)90940-0 |
0.462 |
|
| 1978 |
Tseng W, Gyulai J, Koji T, Lau S, Roth J, Mayer J. Investigation of dislocations by backscattering spectrometry and transmission electron microscopy Nuclear Instruments and Methods. 149: 615-617. DOI: 10.1016/0029-554X(78)90938-2 |
0.358 |
|
| 1978 |
Foti G, Csepregi L, Kennedy EF, Mayer JW, Pronko PP, Rechtin MD. The effect of twins on dechanneling a charged particle beam Nuclear Instruments and Methods. 149: 381-385. DOI: 10.1016/0029-554X(78)90892-3 |
0.347 |
|
| 1978 |
Foti G, Rimini E, Tseng WS, Mayer JW. Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples Applied Physics. 15: 365-369. DOI: 10.1007/Bf00886154 |
0.368 |
|
| 1977 |
Gamo K, Inada T, Mayer JW, Eisen FH, Rhodes CG. Reordering of implanted amorphous layers in gaas Radiation Effects. 33: 85-89. DOI: 10.1080/00337577708237472 |
0.469 |
|
| 1977 |
Kennedy EF, Csepregi L, Mayer JW, Sigmon TW. Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layers Journal of Applied Physics. 48: 4241-4246. DOI: 10.1063/1.323409 |
0.345 |
|
| 1977 |
Csepregi L, Kennedy EF, Gallagher TJ, Mayer JW, Sigmon TW. Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions Journal of Applied Physics. 48: 4234-4240. DOI: 10.1063/1.323408 |
0.452 |
|
| 1977 |
Foti G, Csepregi L, Kennedy E, Pronko P, Mayer JW. Dechanneling by twins Physics Letters A. 64: 265-267. DOI: 10.1016/0375-9601(77)90738-1 |
0.351 |
|
| 1977 |
Liau ZL, Lau SS, Nicolet M-, Mayer JW. Repetitive growth stages in the solid phase epitaxy of silicon Thin Solid Films. 44: 149-153. DOI: 10.1016/0040-6090(77)90449-7 |
0.432 |
|
| 1977 |
Tseng WF, Liau ZL, Lau SS, Nicolet M-, Mayer JW. The crystalline qualities of silicon layers formed by solid phase epitaxial growth Thin Solid Films. 46: 99-107. DOI: 10.1016/0040-6090(77)90345-5 |
0.399 |
|
| 1977 |
Liau ZL, Lau SS, Nicolet M-, Mayer JW. Effects of temperature on the solid phase epitaxy of silicon Thin Solid Films. 46: 93-98. DOI: 10.1016/0040-6090(77)90344-3 |
0.48 |
|
| 1977 |
Eisen F, Welch B, Müller H, Gamo K, Inada T, Mayer J. Tellurium implantation in GaAs Solid-State Electronics. 20: 219-223. DOI: 10.1016/0038-1101(77)90187-3 |
0.384 |
|
| 1977 |
Olowolafe JO, Nicolet M, Mayer JW. Chromium thin film as a barrier to the interaction of Pd2Si with Al Solid-State Electronics. 20: 413-415. DOI: 10.1016/0038-1101(77)90132-0 |
0.356 |
|
| 1977 |
Csepregi L, Küllen R, Mayer J, Sigmon T. Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals Solid State Communications. 21: 1019-1021. DOI: 10.1016/0038-1098(77)90009-6 |
0.439 |
|
| 1976 |
Hammond RB, McGill TC, Mayer JW. Temperature dependence of the electron-hole-liquid luminescence in Si Physical Review B. 13: 3566-3575. DOI: 10.1103/Physrevb.13.3566 |
0.342 |
|
| 1976 |
Csepregi L, Chu WK, Muller H, Mayer JW, Sigmon TW. Influence of thermal history on the residual disorder in implanted <111> silicon Radiation Effects. 28: 227-233. DOI: 10.1080/00337577608237443 |
0.316 |
|
| 1976 |
Csepregi L, Mayer JW, Sigmon TW. Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon Applied Physics Letters. 29: 92-93. DOI: 10.1063/1.88980 |
0.438 |
|
| 1976 |
Csepregi L, Kennedy EF, Lau SS, Mayer JW, Sigmon TW. Disorder produced by high-dose implantation in Si Applied Physics Letters. 29: 645-648. DOI: 10.1063/1.88886 |
0.403 |
|
| 1976 |
Nakamura K, Olowolafe JO, Lau SS, Nicolet MA, Mayer JW, Shima R. Interaction of metal layers with polycrystalline Si Journal of Applied Physics. 47: 1278-1283. DOI: 10.1063/1.322826 |
0.456 |
|
| 1976 |
Olowolafe JO, Nicolet M-, Mayer JW. Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer Journal of Applied Physics. 47: 5182-5186. DOI: 10.1063/1.322591 |
0.446 |
|
| 1976 |
Mayer JW, Csepregi L, Gyulai J, Nagy T, Mezey G, Revesz P, Kotai E. MeV He backscattering analysis of ion-implanted Si: Drive-in diffusion and epitaxial regrowth Thin Solid Films. 32: 303-306. DOI: 10.1016/0040-6090(76)90318-7 |
0.423 |
|
| 1976 |
Olowolafe JO, Nicolet M-, Mayer JW. Influence of the nature of the Si substrate on nickel silicide formed from thin Ni films Thin Solid Films. 38: 143-150. DOI: 10.1016/0040-6090(76)90221-2 |
0.471 |
|
| 1976 |
Poate J, Brown W, Homer R, Augustyniak W, Mayer J, Tu K, van der Weg W. The sputtering of PtSi and NiSi Nuclear Instruments and Methods. 132: 345-349. DOI: 10.1016/0029-554X(76)90756-4 |
0.435 |
|
| 1976 |
Hammond RB, McGill TC, Mayer JW. Properties of the electron–hole liquid luminescence in si double injection diodes Physica Status Solidi (a). 33: 59-66. DOI: 10.1002/Pssa.2210330104 |
0.366 |
|
| 1975 |
Müller H, Gyulai J, Chu WK, Mayer JW, Sigmon TW. Influence of an Oxidizing Annealing Ambient on the Distribution of As, Sb, and Ga Implanted into Silicon Journal of the Electrochemical Society. 122: 1234-1238. DOI: 10.1149/1.2134432 |
0.339 |
|
| 1975 |
Liau ZL, Campisano SU, Canali C, Lau SS, Mayer JW. Kinetics of the Initial Stage of Si Transport Through Pd‐Silicide for Epitaxial Growth Journal of the Electrochemical Society. 122: 1696-1699. DOI: 10.1149/1.2134112 |
0.328 |
|
| 1975 |
Mayer JW, Poate JM, Tu K. Thin Films and Solid-Phase Reactions Science. 190: 228-234. DOI: 10.1126/Science.190.4211.228 |
0.327 |
|
| 1975 |
Müller H, Chu WK, Gyulai J, Mayer JW, Sigmon TW, Cass TR. Crystal orientation dependence of residual disorder in As-implanted Si Applied Physics Letters. 26: 292-294. DOI: 10.1063/1.88161 |
0.388 |
|
| 1975 |
Canali C, Campisano SU, Lau SS, Liau ZL, Mayer JW. Solid‐phase epitaxial growth of Si through palladium silicide layers Journal of Applied Physics. 46: 2831-2836. DOI: 10.1063/1.322026 |
0.42 |
|
| 1975 |
Lee TF, Pashley RD, McGill TC, Mayer JW. Investigation of tellurium-implanted silicon Journal of Applied Physics. 46: 381-388. DOI: 10.1063/1.321347 |
0.367 |
|
| 1975 |
Csepregi L, Mayer J, Sigmon T. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si Physics Letters A. 54: 157-158. DOI: 10.1016/0375-9601(75)90847-6 |
0.446 |
|
| 1975 |
Tu KN, Chu WK, Mayer JW. Structure and growth kinetics of Ni2Si on silicon Thin Solid Films. 25: 403-413. DOI: 10.1016/0040-6090(75)90058-9 |
0.457 |
|
| 1975 |
Chu WK, Lau SS, Mayer JW, Müller H, Tu K. Implanted noble gas atoms as diffusion markers in silicide formation Thin Solid Films. 25: 393-402. DOI: 10.1016/0040-6090(75)90057-7 |
0.443 |
|
| 1975 |
Akutagawa W, Turnbull D, Chu WK, Mayer JW. Solubility and lattice location of Au in CdTe by backscattering techniques Journal of Physics and Chemistry of Solids. 36: 521-528. DOI: 10.1016/0022-3697(75)90136-5 |
0.326 |
|
| 1975 |
Sigmon TW, Chu WK, Müller H, Mayer JW. Analysis of arsenic range distributions in silicon Applied Physics. 5: 347-350. DOI: 10.1007/Bf00928023 |
0.337 |
|
| 1975 |
Mueller H, Gyulai J, Chu WK, Mayer JW, Sigmon TW. Influence Of An Oxidizing Annealing Ambient On The Distribution Of As, Sb, And Ga Implanted Into Silicon Cheminform. 6. DOI: 10.1002/Chin.197548045 |
0.339 |
|
| 1974 |
Turos A, van der Weg WF, Sigurd D, Mayer JW. Change of surface composition of SiO2 layers during sputtering Journal of Applied Physics. 45: 2777-2779. DOI: 10.1063/1.1663667 |
0.362 |
|
| 1974 |
Ottaviani G, Sigurd D, Marrello V, Mayer JW, McCaldin JO. Crystallization of Ge and Si in metal films. I Journal of Applied Physics. 45: 1730-1739. DOI: 10.1063/1.1663483 |
0.481 |
|
| 1974 |
Chu WK, Müller H, Mayer JW, Sigmon TW. Residual disorder in Si from oxygen recoils in annealed ``through‐oxide'' arsenic implants Applied Physics Letters. 25: 297-299. DOI: 10.1063/1.1655480 |
0.389 |
|
| 1974 |
Canali C, Mayer JW, Ottaviani G, Sigurd D, van der Weg W. Solid‐phase transport and epitaxial growth of Ge and Si Applied Physics Letters. 25: 3-5. DOI: 10.1063/1.1655265 |
0.44 |
|
| 1974 |
Sigmon TW, Chu WK, Lugujjo E, Mayer JW. Stoichiometry of thin silicon oxide layers on silicon Applied Physics Letters. 24: 105-107. DOI: 10.1063/1.1655112 |
0.418 |
|
| 1974 |
Chu WK, Nicolet MA, Mayer JW, Evans CA. Comparison of backscattering spectrometry and secondary ion mass spectrometry by analysis of tantalum pentoxide layers Analytical Chemistry. 46: 2136-2141. DOI: 10.1021/Ac60350A039 |
0.309 |
|
| 1974 |
Lau SS, Chu WK, Mayer JW, Tu KN. Evaluation of glancing angle X-ray diffraction and MeV 4He backscattering analyses of silicide formation☆ Thin Solid Films. 23: 205-213. DOI: 10.1016/0040-6090(74)90241-7 |
0.323 |
|
| 1974 |
Akutagawa W, Turnbull D, Chu WK, Mayer JW. Channeling and electrical investigations of Au doped CdTe Solid State Communications. 15: 1919-1922. DOI: 10.1016/0038-1098(74)90117-3 |
0.327 |
|
| 1973 |
Ottaviani G, Sigurd D, Marrello V, McCaldin JO, Mayer JW. Crystal growth of silicon and germanium in metal films. Science (New York, N.Y.). 180: 948-9. PMID 17735921 DOI: 10.1126/Science.180.4089.948 |
0.373 |
|
| 1973 |
Chu WK, Crowder BL, Mayer JW, Ziegler JF. Range distribution of implanted ions in SiO2, Si 3N4, and Al2O3 Applied Physics Letters. 22: 490-492. DOI: 10.1063/1.1654480 |
0.365 |
|
| 1973 |
Chu WK, Lugujjo E, Mayer JW, Sigmon TW. Line-shape extraction analysis of silicon oxide layers on silicon by channelling effect measurements☆ Thin Solid Films. 19: 329-337. DOI: 10.1016/0040-6090(73)90069-2 |
0.417 |
|
| 1973 |
Sigurd D, Bower RW, Weg WFVD, Mayer JW. Characterization of polycrystalline layers by channelling measurements Thin Solid Films. 19: 319-328. DOI: 10.1016/0040-6090(73)90068-0 |
0.38 |
|
| 1973 |
Feng JS-, Chu WK, Nicolet M-, Mayer JW. Relative measurements of stopping cross section factors by back-scattering Thin Solid Films. 19: 195-204. DOI: 10.1016/0040-6090(73)90055-2 |
0.341 |
|
| 1973 |
Mayer JW, Turos A. Comparison of surface layer analysis techniques Thin Solid Films. 19: 1-10. DOI: 10.1016/0040-6090(73)90020-5 |
0.349 |
|
| 1973 |
Chu WK, Mayer JW, Nicolet M, Buck TM, Amsel G, Eisen F. Principles and applications of ion beam techniques for the analysis of solids and thin films Thin Solid Films. 17: 1-41. DOI: 10.1016/0040-6090(73)90002-3 |
0.342 |
|
| 1972 |
Rimini E, Lugujjo E, Mayer JW. CHANNELING IN Si OVERLAID WITH Al AND Au FILMS. Physical Review B. 6: 718-728. DOI: 10.1103/Physrevb.6.718 |
0.388 |
|
| 1972 |
Hiraki A, Lugujjo E, Mayer JW. Formation of silicon oxide over gold layers on silicon substrates Journal of Applied Physics. 43: 3643-3649. DOI: 10.1063/1.1661782 |
0.372 |
|
| 1972 |
Haskell J, Rimini E, Mayer JW. Channeling measurements in As‐doped Si Journal of Applied Physics. 43: 3425-3431. DOI: 10.1063/1.1661732 |
0.343 |
|
| 1972 |
Kamoshida M, Mitchell IV, Mayer JW. Influence of Heat Treatment on Aluminum Oxide Films on Silicon Journal of Applied Physics. 43: 1717-1724. DOI: 10.1063/1.1661386 |
0.395 |
|
| 1972 |
Harris JS, Eisen FH, Welch B, Haskell JD, Pashley RD, Mayer JW. Influence of implantation temperature and surface protection on tellurium implantation in GaAs Applied Physics Letters. 21: 601-603. DOI: 10.1063/1.1654271 |
0.403 |
|
| 1972 |
Ottaviani G, Marrello V, Mayer JW, Nicolet M, Caywood JM. Formation of Injecting and Blocking Contacts on High‐Resistivity Germanium Applied Physics Letters. 20: 323-325. DOI: 10.1063/1.1654169 |
0.352 |
|
| 1972 |
Rimini E, Haskell J, Mayer JW. Beam Effects in the Analysis of As‐Doped Silicon by Channeling Measurements Applied Physics Letters. 20: 237-239. DOI: 10.1063/1.1654126 |
0.35 |
|
| 1972 |
Marrello V, Caywood JM, Mayer JW, Nicolet M‐. Solid‐phase epitaxial growth of Ge layers Physica Status Solidi (a). 13: 531-536. DOI: 10.1002/Pssa.2210130223 |
0.42 |
|
| 1971 |
Gyulai J, Meyer O, Pashley RD, Mayer JW. Lattice location and dopant behavior of group II and VI elements implanted in silicon Radiation Effects and Defects in Solids. 7: 17-24. DOI: 10.1080/00337577108232560 |
0.385 |
|
| 1971 |
Gyulai J, Mayer JW, Rodriguez V, Yu AYC, Gopen HJ. Alloying Behavior of Au and Au–Ge on GaAs Journal of Applied Physics. 42: 3578-3585. DOI: 10.1063/1.1660773 |
0.352 |
|
| 1971 |
Mitchell IV, Kamoshida M, Mayer JW. Channeling‐Effect Analysis of Thin Films on Silicon: Aluminum Oxide Journal of Applied Physics. 42: 4378-4389. DOI: 10.1063/1.1659783 |
0.413 |
|
| 1971 |
Gyulai J, Meyer O, Mayer JW, Rodriguez V. Evaluation of Silicon Nitride Layers of Various Composition by Backscattering and Channeling‐Effect Measurements Journal of Applied Physics. 42: 451-456. DOI: 10.1063/1.1659622 |
0.408 |
|
| 1971 |
Kamoshida M, Mitchell IV, Mayer JW. Influence Of Deposition Temperature On Properties Of Hydrolytically Grown Aluminum Oxide Films Applied Physics Letters. 18: 292-294. DOI: 10.1063/1.1653670 |
0.43 |
|
| 1971 |
Hiraki A, Nicolet M, Mayer JW. Low‐Temperature Migration Of Silicon In Thin Layers Of Gold And Platinum Applied Physics Letters. 18: 178-181. DOI: 10.1063/1.1653615 |
0.427 |
|
| 1971 |
Rimini E, Lugujjo E, Mayer JW. Influence of scattering on MeV He+ channeling in Si overlaid by amorphous films Physics Letters A. 37: 157-158. DOI: 10.1016/0375-9601(71)90104-6 |
0.366 |
|
| 1971 |
Mitchell IV, Kamoshida M, Mayer JW. Lineshape extraction from MeV He + backscattering energy spectra: Aluminum oxide on silicon Physics Letters A. 35: 21-22. DOI: 10.1016/0375-9601(71)90013-2 |
0.366 |
|
| 1971 |
Hiraki A, Lugujjo E, Nicolet M-, Mayer JW. Low‐temperature migration of silicon through metal films importance of silicon‐;metal interface Physica Status Solidi (a). 7: 401-406. DOI: 10.1002/Pssa.2210070212 |
0.467 |
|
| 1970 |
Mayer JW, Martini M, Zanio KR, Fowler IL. Influence of Trapping and Detrapping Effects in Si(Li), Ge(Li) and CdTe Detectors Ieee Transactions On Nuclear Science. 17: 221-234. DOI: 10.1109/Tns.1970.4325694 |
0.347 |
|
| 1970 |
Gyulai J, Mayer JW, Mitchell IV, Rodriguez V. Outdiffusion Through Silicon Oxide And Silicon Nitride Layers On Gallium Arsenide Applied Physics Letters. 17: 332-334. DOI: 10.1063/1.1653422 |
0.423 |
|
| 1970 |
Gyulai J, Meyer O, Mayer JW, Rodriguez V. Analysis of Silicon Nitride Layers on Silicon by Backscattering and Channeling Effect Measurements Applied Physics Letters. 16: 232-234. DOI: 10.1063/1.1653174 |
0.43 |
|
| 1970 |
Meyer O, Gyulai J, Mayer JW. Analysis of amorphous layers on silicon by backscattering and channeling effect measurements Surface Science. 22: 263-276. DOI: 10.1016/0039-6028(70)90081-6 |
0.404 |
|
| 1970 |
Meyer O, Johansson NGE, Picraux ST, Mayer JW. Lattice location and dopant behavior of group II and VI elements implanted in silicon Solid State Communications. 8: 529-531. DOI: 10.1016/0038-1098(70)90297-8 |
0.32 |
|
| 1969 |
Eriksson L, Davies JA, Mayer JW. Ion implantation studies in silicon. Science (New York, N.Y.). 163: 627-33. PMID 17742728 DOI: 10.1126/Science.163.3868.627 |
0.369 |
|
| 1969 |
Eriksson L, Davies JA, Johansson NGE, Mayer JW. Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique Journal of Applied Physics. 40: 842-854. DOI: 10.1063/1.1657473 |
0.346 |
|
| 1969 |
Westmoreland JE, Mayer JW, Eisen FH, Welch B. PRODUCTION AND ANNEALING OF LATTICE DISORDER IN SILICON BY 200‐keV BORON IONS Applied Physics Letters. 15: 308-310. DOI: 10.1063/1.1653010 |
0.378 |
|
| 1969 |
Picraux ST, Westmoreland JE, Mayer JW, Hart RR, Marsh OJ. TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS Applied Physics Letters. 14: 7-9. DOI: 10.1063/1.1652655 |
0.395 |
|
| 1968 |
Mayer JW, Eriksson L, Picraux ST, Davies JA. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering Canadian Journal of Physics. 46: 663-673. DOI: 10.1139/P68-082 |
0.427 |
|
| 1968 |
Mayer JW. Ion Implantation in Semiconductors: Lattice Disorder and Electrical Effects Ieee Transactions On Nuclear Science. 15: 10-21. DOI: 10.1109/Tns.1968.4325025 |
0.405 |
|
| 1968 |
Davies JA, Eriksson L, Mayer JW. EXPERIMENTAL EVIDENCE FOR INTERSTITIAL In AND Tl IN ION‐IMPLANTED SILICON Applied Physics Letters. 12: 255-256. DOI: 10.1063/1.1651980 |
0.387 |
|
| 1968 |
Mayer J. Use of ion implantation techniques to fabricate semiconductor nuclear particle detectors Nuclear Instruments and Methods. 63: 141-151. DOI: 10.1016/0029-554X(68)90319-4 |
0.354 |
|
| 1967 |
Davies JA, Denhartog J, Eriksson L, Mayer JW. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING Canadian Journal of Physics. 45: 4053-4071. DOI: 10.1139/P67-339 |
0.397 |
|
| 1967 |
Eriksson L, Davies JA, Denhartog J, Mayer JW, Marsh OJ, Markarious R. ANALYSIS OF Sb‐IMPLANTED SILICON BY (p, p) SCATTERING AND HALL MEASUREMENTS Applied Physics Letters. 11: 110-110. DOI: 10.1063/1.1754830 |
0.393 |
|
| 1967 |
Mayer JW, Davies JA, Eriksson L. A COMPARISON OF THE HOT IMPLANTATION BEHAVIOR OF SEVERAL GROUP-III AND -V ELEMENTS IN Si AND Ge. Applied Physics Letters. 11: 365-367. DOI: 10.1063/1.1728214 |
0.395 |
|
| Show low-probability matches. |
