James W. Mayer - Publications

Affiliations: 
1980-1992 Cornell University, Ithaca, NY, United States 
 1992- Arizona State University, Tempe, AZ, United States 
Area:
Materials Engineering
Website:
https://www.nap.edu/read/24773/chapter/41

158 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Mudenda S, Streib KL, Adams D, Mayer JW, Nemutudi R, Alford TL. Effect of substrate patterning on hydroxyapatite sol-gel thin film growth Thin Solid Films. 519: 5603-5608. DOI: 10.1016/j.tsf.2011.02.067  0.76
2009 Alford TL, Thompson DC, Mayer JW, Theodore ND. Dopant activation in ion implanted silicon by microwave annealing Journal of Applied Physics. 106. DOI: 10.1063/1.3260245  0.76
2009 Alford TL, Misra E, Bhagat SK, Mayer JW. Influence of Joule heating during electromigration evaluation of silver lines Thin Solid Films. 517: 1833-1836. DOI: 10.1016/j.tsf.2008.08.196  0.76
2008 Thompson DC, Alford TL, Mayer JW. Spectroscopic study of microwave-enhanced silicon exfoliation Applied Physics Letters. 92. DOI: 10.1063/1.2842420  0.76
2008 Alford TL, Shetty PK, Theodore ND, Tile N, Adams D, Mayer JW. Nanocrystalline Si formation in the a-Si/Al system on polyimide and silicon dioxide substrates Thin Solid Films. 516: 3940-3947. DOI: 10.1016/j.tsf.2007.07.204  0.76
2008 Alford TL, Tang T, Thompson DC, Bhagat S, Mayer JW. Influence of microwave annealing on direct bonded silicon wafers Thin Solid Films. 516: 2158-2161. DOI: 10.1016/j.tsf.2007.06.118  0.76
2008 Beeson S, Mayer JW. Patterns of light: Chasing the spectrum from aristotle to LEDs Patterns of Light: Chasing the Spectrum From Aristotle to Leds. 1-195. DOI: 10.1007/978-0-387-75107-8  0.76
2007 Han H, Zoo Y, Mayer JW, Alford TL. Improved surface morphology and texture of Ag films on indium tin oxide via Cu additions Journal of Applied Physics. 102. DOI: 10.1063/1.2761822  0.76
2007 Thompson DC, Alford TL, Mayer JW, Höchbauer T, Lee JK, Nastasi M, Lau SS, Theodore ND, Chu PK. Microwave enhanced ion-cut silicon layer transfer Journal of Applied Physics. 101. DOI: 10.1063/1.2737387  0.76
2007 Alford TL, Feldman LC, Mayer JW. Fundamentals of nanoscale film analysis Fundamentals of Nanoscale Film Analysis. 1-338. DOI: 10.1007/978-0-387-29261-8  0.76
2007 Han H, Zoo Y, Mayer JW, Alford TL. Potential of Ag interconnect and contact metallization for various applications via Cu additions Materials Research Society Symposium Proceedings. 990: 191-196.  0.76
2007 Thompson DC, Decker J, Alford TL, Mayer JW, Theodore ND. Microwave activation of dopants & solid phase epitaxy in silicon Materials Research Society Symposium Proceedings. 989: 145-150.  0.76
2007 Thompson DC, Alford TL, Mayer JW, Hochbauer T, Lee JK, Nastasi M, David Theodore N. Microwave activation of exfoliation in ion-cut silicon layer transfer Materials Research Society Symposium Proceedings. 994: 137-142.  0.76
2006 Han H, Mayer JW, Alford TL. Band gap shift in the indium-tin-oxide films on polyethylene napthalate after thermal annealing in air Journal of Applied Physics. 100. DOI: 10.1063/1.2357647  0.76
2006 Han H, Mayer JW, Alford TL. Effect of various annealing environments on electrical and optical properties of indium tin oxide on polyethylene napthalate Journal of Applied Physics. 99. DOI: 10.1063/1.2204815  0.76
2006 Shao L, Lee JK, Wang YQ, Nastasi M, Thompson PE, Theodore ND, Alford TL, Mayer JW, Chen P, Lau SS. Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy Journal of Applied Physics. 99. DOI: 10.1063/1.2204330  0.76
2006 Di Z, Chu PK, Zhu M, Fu RKY, Luo S, Shao L, Nastasi M, Chen P, Alford TL, Mayer JW, Zhang M, Liu W, Song Z, Lin C. Fabrication of silicon-on-SiO 2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects Applied Physics Letters. 88. DOI: 10.1063/1.2192981  0.76
2006 Shao L, Lin Y, Swadener JG, Lee JK, Jia QX, Wang YQ, Nastasi M, Thompson PE, Theodore ND, Alford TL, Mayer JW, Chen P, Lau SS. H-induced platelet and crack formation in hydrogenated epitaxial Si/Si 0.98B 0.02/Si structures Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2163992  0.76
2006 Zoo Y, Adams D, Mayer JW, Alford TL. Investigation of coefficient of thermal expansion of silver thin film on different substrates using X-ray diffraction Thin Solid Films. 513: 170-174. DOI: 10.1016/j.tsf.2006.02.005  0.76
2006 Shao L, Wang YQ, Nastasi M, Mayer JW. A technique to study the lattice location of light elements in silicon by channeling elastic recoil detection analysis Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 249: 230-233. DOI: 10.1016/j.nimb.2006.04.004  0.76
2006 Streib KL, Alford TL, Mayer JW. Experimental verification of theoretical cross sections for FIB-PIXE Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 249: 92-94. DOI: 10.1016/j.nimb.2006.03.087  0.76
2006 Shao L, Wang YQ, Nastasi M, Mayer JW. Measurements of the stopping powers of He ions incident along the different channel axes and channel planes of Si Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 249: 51-54. DOI: 10.1016/j.nimb.2006.03.021  0.76
2006 Höchbauer T, Misra A, Nastasi M, Mayer JW, Ensinger W. Formation of hydrogen complexes in proton implanted silicon and their influence on the crystal damage Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 242: 623-626. DOI: 10.1016/j.nimb.2005.08.141  0.76
2006 Misra E, Theodore ND, Mayer JW, Alford TL. Failure mechanisms of pure silver, pure aluminum and silver-aluminum alloy under high current stress Microelectronics Reliability. 46: 2096-2103. DOI: 10.1016/j.microrel.2006.01.011  0.76
2006 Shetty PK, Theodore ND, Mayer JW, Alford TL. Kinetics of amorphous silicon dissolution into aluminum layers Materials Letters. 60: 490-493. DOI: 10.1016/j.matlet.2005.09.022  0.76
2006 Adams D, Malgas GF, Smith RD, Massia SP, Alford TL, Mayer JW. Microwave annealing for preparation of crystalline hydroxyapatite thin films Journal of Materials Science. 41: 7150-7158. DOI: 10.1007/s10853-006-0925-7  0.76
2006 Nastasi M, Mayer JW. Ion implantation and synthesis of materials Ion Implantation and Synthesis of Materials. 1-263. DOI: 10.1007/978-3-540-45298-0  0.76
2005 Shao L, Lin Y, Swadener JG, Lee JK, Jia QX, Wang YQ, Nastasi M, Thompson PE, Theodore ND, Alford TL, Mayer JW, Chen P, Lau SS. Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2146211  0.76
2005 Thompson DC, Alford TL, Mayer JW, Hochbauer T, Nastasi M, Lau SS, Theodore ND, Henttinen K, Suni L, Chu PK. Microwave-cut silicon layer transfer Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2135395  0.76
2005 Han H, Adams D, Mayer JW, Alford TL. Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate Journal of Applied Physics. 98. DOI: 10.1063/1.2106013  0.76
2005 Shao L, Wang Y, Lee JK, Nastasi M, Thompson PE, Theodore ND, Mayer JW. A technique to study the lattice location of hydrogen atoms in silicon by channeling elastic recoil detection analysis Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2058200  0.76
2005 Chen P, Lau SS, Chu PK, Henttinen K, Suni T, Suni I, Theodore ND, Alford TL, Mayer JW, Shao L, Nastasi M. Silicon layer transfer using plasma hydrogenation Applied Physics Letters. 87. DOI: 10.1063/1.2048811  0.76
2005 Shao L, Lin Y, Lee JK, Jia QX, Wang Y, Nastasi M, Thompson PE, Theodore ND, Chu PK, Alford TL, Mayer JW, Chen P, Lau SS. Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation Applied Physics Letters. 87. DOI: 10.1063/1.2032602  0.76
2005 Shao L, Wang YQ, Zhang X, Wetteland CJ, Nastasi M, Thompson PE, Mayer JW. Optimized energy window of He beams for accurate determination of depth in channeling Rutherford backscattering spectrometry Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1941454  0.76
2005 Chen P, Chu PK, Höchbauer T, Lee JK, Nastasi M, Buca D, Mantl S, Loo R, Caymax M, Alford T, Mayer JW, Theodore ND, Cai M, Schmidt B, Lau SS. Investigation of plasma hydrogenation and trapping mechanism for layer transfer Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1852087  0.76
2005 Shetty PK, Theodore ND, Ren J, Menendez J, Kim HC, Misra E, Mayer JW, Alford TL. Formation and characterization of silicon films on flexible polymer substrates Materials Letters. 59: 872-875. DOI: 10.1016/j.matlet.2004.11.034  0.76
2005 Adams D, Smith RD, Malgas GF, Massia SP, Alford TL, Mayer JW. The influence of geometrically configured sol-gel derived hydroxyapatite substrates on osteoblast response Key Engineering Materials. 284: 569-572.  0.76
2004 Mitan MM, Kim HC, Alford TL, Malgas GF, Adams D. Ag metallization on suicides with nitride barriers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2804-2810. DOI: 10.1116/1.1815312  0.6
2004 Adams D, Malgas GF, David Theodore N, Gregory R, Kim HC, Misra E, Alford TL, Mayer JW. Effectiveness of reactive sputter-deposited Ta-N films as diffusion barriers for Ag metallization Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2345-2352. DOI: 10.1116/1.1787521  0.76
2004 Chen P, Chu PK, Höchbauer T, Nastasi M, Buca D, Mantl S, Theodore ND, Alford TL, Mayer JW, Loo R, Caymax M, Cai M, Lau SS. Plasma hydrogenation of strain-relaxed SiGeSi heterostructure for layer transfer Applied Physics Letters. 85: 4944-4946. DOI: 10.1063/1.1824171  0.76
2004 Lee JK, Nastasi M, Theodore ND, Smalley A, Alford TL, Mayer JW, Cai M, Lau SS. Effects of hydrogen implantation temperature on ion-cut of silicon Journal of Applied Physics. 96: 280-288. DOI: 10.1063/1.1755851  0.76
2004 Julies BA, Adams D, Mayer JW. The effect of Au thickness and annealing conditions on SiO2 formation in the Au/Si system Thin Solid Films. 469: 282-289. DOI: 10.1016/j.tsf.2004.08.127  0.76
2004 Malgas GF, Adams D, Alford TL, Mayer JW. A study of the factors influencing the kinetics in Ag/Al bilayer systems Thin Solid Films. 467: 267-274. DOI: 10.1016/j.tsf.2004.04.025  0.76
2004 Kim HC, Theodore ND, Gadre KS, Mayer JW, Alford TL. Investigation of thermal stability, phase formation, electrical, and microstructural properties of sputter-deposited titanium aluminide thin films Thin Solid Films. 460: 17-24. DOI: 10.1016/j.tsf.2004.01.048  0.76
2004 Thompson DC, Kim HC, Alford TL, Mayer JW. Ion beam analysis applied to new and innovative technologies Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 968-972. DOI: 10.1016/j.nimb.2004.01.198  0.76
2004 Alford TL, Mitan MM, Govindasamy R, Mayer JW. Ion beam analysis of silver thin films on cobalt silicides Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 897-901. DOI: 10.1016/j.nimb.2004.01.184  0.76
2004 Nastasi M, Höchbauer T, Verda RD, Misra A, Lee JK, Mayer JW, Lau SS. Using ion beam analysis in determining the mechanisms of cleavage in hydrogen ion implanted Si Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 604-610. DOI: 10.1016/j.nimb.2004.01.128  0.76
2004 Kim HC, David Theodore N, Mayer JW, Alford TL. Thermal stability and electrical properties of Ag(Al) metallization Materials Research Society Symposium Proceedings. 812: 209-214.  0.76
2004 Theodore ND, Kim HC, Gadre KS, Mayer JW, Alford TL. Morphology of Ti37Al63 thin-films deposited by magnetron sputtering Materials Research Society Symposium Proceedings. 812: 215-220.  0.76
2003 Kim J, Simon AW, Ripoche V, Mayer JW, Wilkens B. Proton-induced x-ray emission analysis of turquoise artefacts from Salado platform Mound sites in the Tonto Basin of central Arizona Measurement Science and Technology. 14: 1579-1589. DOI: 10.1088/0957-0233/14/9/309  0.76
2003 Thompson DC, Kim HC, Alford TL, Mayer JW. Formation of silicides in a cavity applicator microwave system Applied Physics Letters. 83: 3918-3920. DOI: 10.1063/1.1625430  0.76
2003 Adams D, Julies BA, Mayer JW, Alford TL. The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems Applied Surface Science. 216: 163-168. DOI: 10.1016/S0169-4332(03)00513-0  0.76
2003 Mitan MM, Alford TL, Mayer JW. Stability of silver thin films on cobalt and nickel silicides Thin Solid Films. 434: 258-263. DOI: 10.1016/S0040-6090(03)00451-6  0.76
2003 Dwikusuma F, Mayer J, Kuech TF. Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy Journal of Crystal Growth. 258: 65-74. DOI: 10.1016/S0022-0248(03)01506-9  0.76
2002 Alford TL, Mitan M, Mayer JW. Nanometer-scale silicide structures formed by focused ion-beam implantation Proceedings of the International Conference On Ion Implantation Technology. 22: 677-681. DOI: 10.1109/IIT.2002.1258096  0.68
2002 Höchbauer T, Misra A, Nastasi M, Mayer JW. Physical mechanisms behind the ion-cut in hydrogen implanted silicon Journal of Applied Physics. 92: 2335-2342. DOI: 10.1063/1.1494844  0.76
2002 Cai M, Qiao D, Yu LS, Lau SS, Li CP, Hung LS, Haynes TE, Henttinen K, Suni I, Poon VMC, Marek T, Mayer JW. Single crystal Si layers on glass formed by ion cutting Journal of Applied Physics. 92: 3388-3392. DOI: 10.1063/1.1492017  0.76
2002 Höchbauer T, Nastasi M, Verda RD, Misra A, Henttinen K, Suni I, Lau SS, Mayer JW. The use of ion channeling and elastic recoil detection in determining the mechanism of cleavage in the ion-cut process Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 190: 592-597. DOI: 10.1016/S0168-583X(01)01306-4  0.76
2002 Milan MM, Pivin DP, Alford TL, Mayer JW. Patterning of nanometer-scale suicide structures on silicon by 'direct writing focus ion-beam implantation' Thin Solid Films. 411: 219-224. DOI: 10.1016/S0040-6090(02)00282-1  0.76
2001 Laursen T, Chandrasekhar D, Hervig RL, Mayer JW, Smith DJ, Jasper C. Fabrication and characterization of C implantation standards for Si1-x-yGexCy alloys Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 2879-2883. DOI: 10.1116/1.1412652  0.76
2001 Mitan MM, Pivin DP, Alford TL, Mayer JW. Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2525-2528. DOI: 10.1116/1.1408953  0.76
2001 Gadre KS, Alford TL, Mayer JW. Use of TiN(O)Ti as an effective intermediate stress buffer and diffusion barrier for Cu/parylene-n interconnects Applied Physics Letters. 79: 3260-3262. DOI: 10.1063/1.1416156  0.76
2001 Malgas GF, Adams D, Nguyen P, Wang Y, Alford TL, Mayer JW. Investigation of the effects of different annealing ambients on Ag/Al bilayers: Electrical properties and morphology Journal of Applied Physics. 90: 5591-5596. DOI: 10.1063/1.1415051  0.76
2001 Mitan MM, Pivin DP, Alford TL, Mayer JW. Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer Applied Physics Letters. 78: 2727-2729. DOI: 10.1063/1.1369608  0.76
2001 Höchbauer T, Misra A, Nastasi M, Mayer JW. Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation Journal of Applied Physics. 89: 5980-5990. DOI: 10.1063/1.1353561  0.76
2001 Zheng Y, Lau SS, Höchbauer T, Misra A, Verda R, He XM, Nastasi M, Mayer JW. Orientation dependence of blistering in H-implanted Si Journal of Applied Physics. 89: 2972-2978. DOI: 10.1063/1.1334921  0.76
2001 Höchbauer T, Misra A, Verda R, Zheng Y, Lau SS, Mayer JW, Nastasi M. The influence of ion-implantation damage on hydrogen-induced ion-cut Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 175: 169-175. DOI: 10.1016/S0168-583X(00)00540-1  0.76
2001 Alford TL, Zeng Y, Nguyen P, Chen L, Mayer JW. Self-encapsulation effects on the electromigration resistance of silver lines Microelectronic Engineering. 55: 389-395. DOI: 10.1016/S0167-9317(00)00472-X  0.76
2001 Alford TL, Nguyen P, Zeng Y, Mayer JW. Advanced silver-based metallization patterning for ULSI applications Microelectronic Engineering. 55: 383-388. DOI: 10.1016/S0167-9317(00)00471-8  0.76
2000 Höchbauer T, Misra A, Verda R, Nastasi M, Mayer JW, Zheng Y, Lau SS. Hydrogen-implantation induced silicon surface layer exfoliation Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 80: 1921-1931. DOI: 10.1080/01418630050179654  0.76
2000 Wang Y, Alford TL, Mayer JW. Kinetics model for the self-encapsulation of Ag/Al bilayers Materials Research Society Symposium - Proceedings. 612: D971-D976.  0.76
1999 Höchbauer T, Nastasi M, Mayer JW. Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon Applied Physics Letters. 75: 3938-3940.  0.76
1999 Höchbauer T, Nastasi M, Lau SS, Zheng Y, Mayer JW. The influence of damage and dopant on the blister formation in hydrogen implanted silicon Materials Research Society Symposium - Proceedings. 568: 109-114.  0.76
1999 Wang Y, Alford TL, Mayer JW. Kinetics of Ag/Al bilayer self-encapsulation Journal of Applied Physics. 86: 5407-5412.  0.76
1999 Pretorius R, Theron CC, Vantomme A, Mayer JW. Compound phase formation in thin film structures Critical Reviews in Solid State and Materials Sciences. 24: 1-62.  0.76
1999 Elkin B, Mayer J, Schindler B, Vohrer U. Wettability, chemical and morphological data of hydrophobic layers by plasma polymerization on smooth substrates Surface and Coatings Technology. 116: 836-840.  0.76
1998 Stein BL, Yu ET, Croke ET, Hunter AT, Laursen T, Mayer JW, Ahn CC. Deep-level transient spectroscopy of Si/Si1-x-yGexCy heterostructures Applied Physics Letters. 73: 647-649. DOI: 10.1063/1.121935  0.76
1998 Adams D, Julies BA, Mayer JW, Alford TL. Corrosion of titanium-nitride encapsulated silver films exposed to a H2S ambient Thin Solid Films. 332: 235-239.  0.76
1998 Croke ET, Vajo JJ, Hunter AT, Ahn CC, Chandrasekhar D, Laursen T, Smith DJ, Mayer JW. Stabilizing the surface morphology of Si1-x-yGexCy/Si heterostructures grown by molecular beam epitaxy through the use of a silicon-carbide source Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1937-1942.  0.76
1998 Stein BL, Yu ET, Croke ET, Hunter AT, Laursen T, Mayer JW, Ahn CC. Electronic properties of Si/Si1-x-yGexCy heterojunctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1639-1643.  0.76
1998 Gosser DC, Ohnersorgen MA, Simon AW, Mayer JW. PIXE analysis of Salado polychrome ceramics of the American Southwest Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 136: 880-887.  0.76
1998 Kouvetakis J, Mayer J. Synthesis and analysis of SiGeC International Conference On Solid-State and Integrated Circuit Technology Proceedings. 2-5.  0.76
1997 Amali AI, Mayer JW, Zeng Y, Zou YL, Alford TL, Deng F, Lau SS. TEM observations of Ag-Ti bilayers after thermal aging treatment in a reducing ambient Materials Research Society Symposium - Proceedings. 472: 197-202.  0.76
1997 Zou YL, Alford TL, Mayer JW. Physical characterization of photosensitive polyimide Materials Research Society Symposium - Proceedings. 476: 255-260.  0.76
1997 Laursen T, Chandrasekhar D, Smith DJ, Mayer JW, Croke ET, Hunter AT. Materials characterization of Si1-x-yGexCy/Si superlattice structures Thin Solid Films. 308: 358-362.  0.76
1997 Adams D, Laursen T, Alford TL, Mayer JW. Titanium-nitride self-encapsulation of Cu and Ag films on silicon dioxide Thin Solid Films. 308: 448-454.  0.76
1997 Laursen T, Chandrasekhar D, Smith DJ, Mayer JW, Huffman J, Westhoff R, Robinson M. Crystalline-to-amorphous transition in chemical vapor deposition of pseudomorphic Si 1-x-yGe xC y films Applied Physics Letters. 71: 1634-1636.  0.76
1997 Stein BL, Yu ET, Croke ET, Hunter AT, Laursen T, Bair AE, Mayer JW, Ahn CC. Measurement of band offsets in Si/Si1-xGex and Si/Si1-x-yGexCy heterojunctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1108-1111.  0.76
1997 Stein BL, Yu ET, Croke ET, Hunter AT, Laursen T, Bair AE, Mayer JW, Ahn CC. Band offsets in Si/Si1-x-yGexCy heterojunctions measured by admittance spectroscopy Applied Physics Letters. 70: 3413-3415.  0.76
1997 Chason E, Picraux ST, Poate JM, Borland JO, Current MI, Diaz De La Rubia T, Eaglesham DJ, Holland OW, Law ME, Magee CW, Mayer JW, Melngailis J, Tasch AF. Ion beams in silicon processing and characterization Journal of Applied Physics. 81: 6513-6561.  0.76
1997 Croke ET, Hunter AT, Ahn CC, Laursen T, Chandrasekhar D, Bair AE, Smith DJ, Mayer JW. Control of composition and crystallinity in the molecular beam epitaxy of strain-compensated Si1 -x-yGexCy alloys on Si Journal of Crystal Growth. 175: 486-492.  0.76
1997 Pretorius R, Mayer JW. Silicide formation by concentration controlled phase selection Journal of Applied Physics. 81: 2448-2450.  0.76
1997 Cvetkovska M, Wilkens B, Mayer J. Accelerator ion beam analysis of poly(vinyl chloride) Journal of the Serbian Chemical Society. 62: 459-471.  0.76
1996 Russell SW, Alford TL, Luptak KA, Pizziconi VB, Mayer JW. The application of ion beam analysis to calcium phosphate-based biomaterials. Journal of Biomedical Materials Research. 30: 165-74. PMID 9019480 DOI: 10.1002/(SICI)1097-4636(199602)30:2<165::AID-JBM5>3.0.CO;2-P  0.76
1996 Adams D, Alford TL, Rafalski SA, Rack MJ, Russell SW, Kim MJ, Mayer JW. Formation of passivation and adhesion layers for Cu via nitridation of Cu-Ti in an ammonia ambient Materials Chemistry and Physics. 43: 145-152. DOI: 10.1016/0254-0584(95)01610-7  0.76
1996 Bair AE, Alford TL, Atzmon Z, Marcus SD, Doller DC, Morton R, Lau SS, Mayer JW. Cobalt and titanium metallization of SiGeC for shallow contacts Materials Research Society Symposium - Proceedings. 427: 529-533.  0.76
1996 Orner BA, Olowolafe J, Roe K, Kolodzey J, Laursen T, Mayer JW, Spear J. Band gap of Ge rich Si1-x-yGexCy alloys Applied Physics Letters. 69: 2557-2559.  0.76
1996 Yu N, Levine TE, Sickafus KE, Nastasi M, Mitchell JN, Maggiore CJ, Evans CR, Hollander MG, Tesmer JR, Weber WJ, Mayer JW. In situ MeV ion beam analysis of ceramic surfaces modified by 100-400 keV ion irradiation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 118: 766-771.  0.76
1996 Bair AE, Atzmon Z, Russell SW, Barbour JC, Alford TL, Mayer JW. Comparison of elastic resonance and elastic recoil detection in the quantification of carbon in SiGeC Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 118: 274-277.  0.76
1996 Morton R, Deng F, Lau SS, Xin S, Furdyna JK, Hutchins JW, Skromme BJ, Mayer JW. Ion beam mixing in ZnSe/CdZnSe strained layer structures Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 118: 704-708.  0.76
1996 Eyal A, Brener R, Beserman R, Eizenberg M, Atzmon Z, Smith DJ, Mayer JW. The effect of carbon on strain relaxation and phase formation in the Ti/Si1-x-yGexCy/Si contact system Applied Physics Letters. 69: 64-66.  0.76
1996 Yu N, Mcintyre PC, Levine TE, Giannelis EP, Mayer JW, Nastasi M. Ion-beam-induced epitaxial crystallization of sol-gel zirconia thin films on yttria-stabilized zirconia Philosophical Magazine Letters. 73: 359-368.  0.76
1996 Strane JW, Lee SR, Stein HJ, Picraux ST, Watanabe JK, Mayer JW. Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy Journal of Applied Physics. 79: 637-646.  0.76
1996 Jasper C, Morton R, Lau SS, Haynes TE, Mayer JW, Jones KS. Dose-rate effects in silicon-implanted gallium arsenide from low to high doses Journal of Electronic Materials. 25: 107-111.  0.76
1996 Picraux ST, Chason E, Poate JM, Borland JO, Current MI, Diaz de la Rubia T, Eaglesham DJ, Holland OW, Law ME, Magee CW, Mayer JW, Melngailis J, Tasch AF. Energetic ion beams in semiconductor processing: summary of a doe panel study Materials Research Society Symposium - Proceedings. 396: 859-868.  0.76
1996 Adams D, Alford TL, Laursen T, Mayer JW, Zou L. Passivation of Ag on SiO2by annealing Ag-Ti alloys in an ammonia ambient European Solid-State Device Research Conference. 31-38.  0.76
1996 Atzmon Z, Bair AE, Alford TL, Chandrasekhar D, Smith DJ, Mayer JW. Heteroepitaxial Si1-x-yGexCy layer growth on (100)Si by atmospheric pressure chemical vapor deposition Materials Research Society Symposium - Proceedings. 399: 117-122.  0.76
1995 Soave RJ, Tasker GW, Then AM, Mayer JW, Shacham-Diamand Y. A novel technique for characterizing the surface coverage of thin-film chemical vapor deposition in ultra-high-aspect-ratio microstructures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1027-1031. DOI: 10.1116/1.579578  0.76
1995 Wang SQ, Hong S, White A, Hoener C, Mayer JW. Interfacial reactions in the SiO2/Ru and SiO2/Ru/Al- Si structures Journal of Applied Physics. 77: 5751-5762. DOI: 10.1063/1.359220  0.76
1995 Soave RJ, Ganguli S, Gill WN, Shacham-Diamand Y, Mayer JW. Thickness profiles of SiO2 films deposited from tetraethoxysilane/O3 precursors in ultra-high-aspect-ratio capillaries Applied Physics Letters. 67: 3286. DOI: 10.1063/1.115222  0.76
1995 Mayer JW, Sigmon TW. Low power electronics and pulsed laser processing Materials Chemistry & Physics. 42: 129-133. DOI: 10.1016/0254-0584(95)01545-0  0.76
1995 Levine TE, Yu N, Kodali P, Walter KC, Nastasi M, Tesmer JR, Maggiore CJ, Mayer JW. In situ ion-beam analysis and modification of sol-gel zirconia thin films Nuclear Inst. and Methods in Physics Research, B. 106: 597-601. DOI: 10.1016/0168-583X(95)00816-0  0.76
1995 Bair AE, Atzmon Z, Russell SW, Alford TL, Mayer JW, Barbour JC. Quantification of carbon in Si1-x-yGexCy with uniform profiles Nuclear Inst. and Methods in Physics Research, B. 103: 339-346. DOI: 10.1016/0168-583X(95)00614-1  0.76
1995 Jasper C, Morton R, Lau SS, Haynes TE, Garcia R, Mayer JW. Inversion of dose rate effects in ion implanted gallium arsenide in the low dose regime Nuclear Inst. and Methods in Physics Research, B. 96: 294-297. DOI: 10.1016/0168-583X(94)00503-6  0.76
1995 Martin BC, Tracy CJ, Mayer JW, Hendrickson LE. A comparative study of Hillock formation in aluminum films Thin Solid Films. 271: 64-68. DOI: 10.1016/0040-6090(95)06941-0  0.76
1995 Adams D, Alford TL, Theodore ND, Russell SW, Spreitzera RL, Mayer JW. Passivation of Cu via refractory metal nitridation in an ammonia ambient Thin Solid Films. 262: 199-208. DOI: 10.1016/0040-6090(94)05805-9  0.76
1995 Atzmon Z, Bair AE, Alford TL, Chandrasekhar D, Smith DJ, Mayer JW. Wet oxidation of amorphous and crystalline Si1-x-yGexCy alloys grown on (100)Si substrates Applied Physics Letters. 2241.  0.76
1995 Alford TL, Russell SW, Pizziconi VB, Mayer JW, Levine TE, Nastasi M, Cotell CM, Auyeung RCY. Ion mixing of pulsed laser deposited hydroxylapatite (HA) Materials Research Society Symposium - Proceedings. 354: 15-20.  0.76
1995 Alford TL, Jian L, Mayer JW, Shi-Qing W. Copper-based metallization and interconnects for ultra-large-scale integration applications Thin Solid Films. 262: vii,viii.  0.76
1994 Strane JW, Stein HJ, Lee SR, Picraux ST, Watanabe JK, Mayer JW. Precipitation and relaxation in strained Si1-yCy/Si heterostructures Journal of Applied Physics. 76: 3656-3668. DOI: 10.1063/1.357429  0.76
1994 Russell SW, Strane JW, Mayer JW, Wang SQ. Reaction kinetics in the Ti/SiO2 system and Ti thickness dependence on reaction rate Journal of Applied Physics. 76: 257-263. DOI: 10.1063/1.357137  0.76
1994 Atzmon Z, Eizenberg M, Shacham-Diamand Y, Mayer JW, Schäffler F. Low-dose implantation of Sb in Si1-xGex epitaxial layers: Correlation between electrical properties and radiation damage Journal of Applied Physics. 75: 377-381. DOI: 10.1063/1.356991  0.76
1994 Hong SQ, Hong QZ, Li J, Mayer JW. Interdiffusion and reaction in Cu/PtSi/Si(100) systems Journal of Applied Physics. 75: 3959-3963. DOI: 10.1063/1.356016  0.76
1994 Atzmon Z, Eizenberg M, Shacham-Diamand Y, Mayer JW, Schäffler F. Solid-phase epitaxial regrowth of Sb-implanted Si1-xGe x strained layers: Kinetics and electrical properties Journal of Applied Physics. 75: 3936-3943. DOI: 10.1063/1.356013  0.76
1994 Atzmon Z, Bair AE, Jaquez EJ, Mayer JW, Chandrasekhar D, Smith DJ, Hervig RL, Robinson M. Chemical vapor deposition of heteroepitaxial Si1-x-yGe xCy films on (100)Si substrates Applied Physics Letters. 65: 2559-2561. DOI: 10.1063/1.112635  0.76
1994 Nastasi M, Mayer JW. Ion beam mixing in metallic and semiconductor materials Materials Science and Engineering R. 12: 1-52. DOI: 10.1016/0927-796X(94)90005-1  0.76
1994 Adams D, Spreitzer RL, Russell SW, Theodore ND, Alford TL, Mayer JW. Effectiveness of nitride diffusion barriers in a self-encapsulated copper-based metallization Materials Research Society Symposium - Proceedings. 337: 231-236.  0.76
1994 Atzmon Z, Sharma R, Russell SW, Mayer JW. Kinetics of copper grain growth during nitridation of Cu-Cr and Cu-Ti thin films by in situ TEM Materials Research Society Symposium - Proceedings. 337: 625-630.  0.76
1994 Rafalski SA, Spreitzer RL, Russell SW, Alford TL, Li J, Moinpour M, Moghadam F, Mayer JW. Enhanced adhesion of copper films to SiO2, PSG and BPSG by refractory metal additions Materials Research Society Symposium - Proceedings. 337: 613-618.  0.76
1994 Spreitzer RL, Rafalski SA, Adams D, Russell SW, Atzmon Z, Li J, Alford TL, Mayer JW. Interfacial reactions of copper/refractory alloy and bilayer films on SiO2 Materials Research Society Symposium - Proceedings. 337: 631-636.  0.76
1994 Xu M, Atzmon Z, Schroer A, Wilkens B, Mayer JW. Visualization of ion channeling of (100)Si and Si1-xGex epitaxial grown layers on silicon Materials Research Society Symposium Proceedings. 316: 679-684.  0.76
1994 Atzmon Z, Sharma R, Mayer JW, Hong SQ. In situ transmission electron microscopy study during NH3 ambient annealing of Cu-Cr thin films Materials Research Society Symposium Proceedings. 317: 245-250.  0.76
1993 Strane JW, Stein HJ, Lee SR, Doyle BL, Picraux ST, Mayer JW. Metastable SiGeC formation by solid phase epitaxy Applied Physics Letters. 63: 2786-2788. DOI: 10.1063/1.110334  0.76
1992 Li J, Mayer JW, Tu KN. Nucleation and growth of Cu2O in the reduction of CuO thin films. Physical Review. B, Condensed Matter. 45: 5683-5686. PMID 10000291  0.52
1990 Schwarz SA, Marshall ED, Allen LH, Palmstrøm CJ, Han CC, Mayer JW, Schwartz CL, Lau SS, Sands T, Shantharama LG, Harbison JP, Florez LT. Backside secondary ion mass spectrometry investigation of ohmic and Schottky contacts on GaAs Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2079-2083. DOI: 10.1116/1.577006  0.44
1989 Li J, Wang SQ, Mayer JW, Tu KN. Oxygen-diffusion-induced phase boundary migration in copper oxide thin films. Physical Review. B, Condensed Matter. 39: 12367-12370. PMID 9948095  0.52
1989 Yu AJ, Mayer JW, Eaglesham DJ, Poate JM. Ion beam induced epitaxy of deposited amorphous Si and Si-Ge films Applied Physics Letters. 54: 2342-2344. DOI: 10.1063/1.101523  0.76
1988 Nastasi M, Okamoto PR, Averback RS, Hung LS, Barbour JC, Mayer JW. Irradiation stability of Pd2Si Journal of the Less-Common Metals. 140: 277-286. DOI: 10.1016/0022-5088(88)90388-8  0.76
1986 Batson PE, Kavanagh KL, Woodall JM, Mayer JW. Electron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interface. Physical Review Letters. 57: 2729-2732. PMID 10033846 DOI: 10.1103/PhysRevLett.57.2729  0.4
1986 Composto RJ, Mayer JW, Kramer EJ, White DM. Fast mutual diffusion in polymer blends. Physical Review Letters. 57: 1312-1315. PMID 10033413 DOI: 10.1103/PhysRevLett.57.1312  0.76
1986 Lilienfeld DA, Nastasi M, Johnson HH, Ast DG, Mayer JW. Quasicrystalline transformation by ion irradiation. Physical Review. B, Condensed Matter. 34: 2985-2987. PMID 9940020 DOI: 10.1103/PhysRevB.34.2985  0.76
1986 Sinke W, Saris FW, Barbour JC, Mayer JW. SOLID-PHASE EPITAXIAL REGROWTH OF FINE-GRAIN POLYCRYSTALLINE SILICON. Journal of Materials Research. 1: 155-161. DOI: 10.1557/JMR.1986.0155  0.76
1986 Hung LS, Saris FW, Wang SQ, Mayer JW. Interactions of amorphous alloys with Si substrates and Al overlayers Journal of Applied Physics. 59: 2416-2421. DOI: 10.1063/1.336343  0.76
1985 Lilienfeld DA, Nastasi M, Johnson HH, Ast DG, Mayer JW. Amorphous-to-quasicrystalline transformation in the solid state. Physical Review Letters. 55: 1587-1590. PMID 10031863 DOI: 10.1103/PhysRevLett.55.1587  0.76
1985 Barbour JC, Saris FW, Nastasi M, Mayer JW. Amorphous Ni-Zr alloys as barriers for self-diffusion. Physical Review. B, Condensed Matter. 32: 1363-1365. PMID 9937165 DOI: 10.1103/PhysRevB.32.1363  0.76
1985 Saris FW, Hung LS, Nastasi M, Mayer JW, Whitehead B. Failure temperature of amorphous Cu-Ta alloys as diffusion barriers in Al-Si contacts Applied Physics Letters. 46: 646-648. DOI: 10.1063/1.95515  0.76
1985 Brat T, Eizenberg M, Fastow R, Palmstrom CJ, Mayer JW. Pulsed proton-beam annealing of Ir and IrxV100-x thin films on silicon Journal of Applied Physics. 57: 264-269. DOI: 10.1063/1.334798  0.76
1984 Grunes LA, Barbour JC, Hung LS, Mayer JW, Ritsko JJ. Electron energy loss spectroscopy of ion irradiated ni-al alloys Journal of Applied Physics. 56: 168-176. DOI: 10.1063/1.333748  0.76
1984 Chen SH, Zheng LR, Barbour JC, Zingu EC, Hung LS, Carter CB, Mayer JW. Lateral-diffusion couples studied by transmission electron microscopy Materials Letters. 2: 469-476. DOI: 10.1016/0167-577X(84)90075-2  0.76
1983 Thompson MO, Mayer JW, Cullis AG, Webber HC, Chew NG, Poate JM, Jacobson DC. Silicon melt, regrowth, and amorphization velocities during pulsed laser irradiation Physical Review Letters. 50: 896-899. DOI: 10.1103/PhysRevLett.50.896  0.76
1979 Chapman GE, Lau SS, Matteson S, Mayer JW. Silicide formation by high-dose Si+-ion implantation of Pd Journal of Applied Physics. 50: 6321-6327. DOI: 10.1063/1.325773  0.76
1979 Golecki I, Kennedy EF, Lau SS, Mayer JW, Tseng WF, Eckardt RC, Wagner RJ. Heteroepitaxy of a deposited amorphous germanium layer on a silicon substrate by laser annealing Thin Solid Films. 57: L13-L15. DOI: 10.1016/0040-6090(79)90435-8  0.76
1978 Csepregi L, Kennedy EF, Mayer JW, Sigmon TW. Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si Journal of Applied Physics. 49: 3906-3911. DOI: 10.1063/1.325397  0.76
1977 Kennedy EF, Csepregi L, Mayer JW, Sigmon TW. Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layers Journal of Applied Physics. 48: 4241-4246. DOI: 10.1063/1.323409  0.76
1977 Csepregi L, Kennedy EF, Gallagher TJ, Mayer JW, Sigmon TW. Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions Journal of Applied Physics. 48: 4234-4240. DOI: 10.1063/1.323408  0.76
1976 Csepregi L, Kennedy EF, Lau SS, Mayer JW, Sigmon TW. Disorder produced by high-dose implantation in Si Applied Physics Letters. 29: 645-648. DOI: 10.1063/1.88886  0.76
1972 Harris JS, Eisen FH, Welch B, Haskell JD, Pashley RD, Mayer JW. Influence of implantation temperature and surface protection on tellurium implantation in GaAs Applied Physics Letters. 21: 601-603. DOI: 10.1063/1.1654271  0.76
1971 Mitchell IV, Mayer JW, Kung JK, Spitzer WG. Investigation of te-doped GaAs annealing effects by optical- and channeling-effect measurements Journal of Applied Physics. 42: 3982-3987. DOI: 10.1063/1.1659714  0.76
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