David Erik Aspnes - Publications

Affiliations: 
1967-1983 Bell Laboratories, Murray Hill, NJ, United States 
 1992- Physics North Carolina State University, Raleigh, NC 
Area:
Electronic Materials, Optics
Website:
https://www.physics.ncsu.edu/people/faculty_aspnes.php

197 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Yu Y, Yu Y, Cai Y, Li W, Gurarslan A, Peelaers H, Aspnes DE, Van de Walle CG, Nguyen NV, Zhang YW, Cao L. Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films. Scientific Reports. 5: 16996. PMID 26598075 DOI: 10.1038/srep16996  0.44
2015 Aspnes DE. Bond models in linear and nonlinear optics Proceedings of Spie - the International Society For Optical Engineering. 9584. DOI: 10.1117/12.2188400  1
2014 Aspnes DE. Spectroscopic ellipsometry - Past, present, and future Thin Solid Films. 571: 334-344. DOI: 10.1016/j.tsf.2014.03.056  1
2014 Aspnes DE, Choi SG. Combined direct- and reciprocal-space approach for converting spectra to energy scales with negligible loss of information Thin Solid Films. 571: 506-508. DOI: 10.1016/j.tsf.2013.11.028  1
2014 Kim TJ, Hwang SY, Byun JS, Aspnes DE, Lee EH, Song JD, Liang CT, Chang YC, Park HG, Choi J, Kim JY, Kang YR, Park JC, Kim YD. Dielectric functions and interband transitions of InxAl 1 - XP alloys Current Applied Physics. 14: 1273-1276. DOI: 10.1016/j.cap.2014.06.026  1
2014 Kim TJ, Byun JS, Hwang SY, Park HG, Kang YR, Park JC, Kim YD, Aspnes DE. Parameterization of the dielectric functions of InGaSb alloys Current Applied Physics. 14: 768-771. DOI: 10.1016/j.cap.2014.03.010  1
2013 Aspnes DE. Spectroscopic ellipsometry - A perspective Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4809747  1
2013 Reynolds JG, Reynolds CL, Mohanta A, Muth JF, Rowe JE, Everitt HO, Aspnes DE. Shallow acceptor complexes in p-type ZnO Applied Physics Letters. 102. DOI: 10.1063/1.4802753  1
2013 Kim TJ, Yoon JJ, Byun JS, Hwang SY, Aspnes DE, Shin SH, Song JD, Liang CT, Chang YC, Barange NS, Kim JY, Kim YD. Interband transitions and dielectric functions of InGaSb alloys Applied Physics Letters. 102. DOI: 10.1063/1.4795622  1
2013 Hwang SY, Kim TJ, Byun JS, Barange NS, Diware MS, Kim YD, Aspnes DE, Yoon JJ, Song JD. Analytic representation of the dielectric functions of InAs xSb1 - X alloys in the parametric model Thin Solid Films. 547: 276-279. DOI: 10.1016/j.tsf.2012.11.088  1
2012 Gokce B, Gundogdu K, Aspnes DE. Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: A second-harmonic-generation investigation Journal of the Korean Physical Society. 60: 1685-1689. DOI: 10.3938/jkps.60.1685  1
2012 Nelson F, Sandin A, Dougherty DB, Aspnes DE, Rowe JE, Diebold AC. Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)-Si by spectroscopic ellipsometry, Auger spectroscopy, and STM Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4726199  1
2012 Aspnes DE. The accurate determination of optical properties by ellipsometry Handbook of Optical Constants of Solids. 1: 89-112. DOI: 10.1016/B978-0-08-054721-3.50010-1  1
2011 Gokce B, Gundogdu K, Adles EJ, Aspnes DE. Back-reflection second-harmonic generation of (111)Si: Theory and experiment Journal of the Korean Physical Society. 58: 1237-1243. DOI: 10.3938/jkps.58.1237  1
2011 Choi SG, Van Schilfgaarde M, Aspnes DE, Norman AG, Olson JM, Peshek TJ, Levi DH. Above-band-gap dielectric functions of ZnGeAs2: Ellipsometric measurements and quasiparticle self-consistent GW calculations Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/PhysRevB.83.235210  1
2011 Ghong TH, Han SH, Chung JM, Byun JS, Aspnes DE, Kim YD. Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry Aip Conference Proceedings. 1399: 533-534. DOI: 10.1063/1.3666489  1
2011 Gokce B, Adles EJ, Aspnes DE, Gundogdu K. Measurement and control of in-plane surface chemistry during oxidation of H-terminated (111)Si Aip Conference Proceedings. 1399: 193-194. DOI: 10.1063/1.3666321  1
2011 Gokce B, Aspnes DE, Gundogdu K. Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si Applied Physics Letters. 98. DOI: 10.1063/1.3567528  1
2011 Gokce B, Aspnes DE, Lucovsky G, Gundogdu K. Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping Applied Physics Letters. 98. DOI: 10.1063/1.3537809  1
2011 Aspnes DE. Plasmonics and effective-medium theories Thin Solid Films. 519: 2571-2574. DOI: 10.1016/j.tsf.2010.12.081  1
2010 Gokce B, Adles EJ, Aspnes DE, Gundogdu K. Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si. Proceedings of the National Academy of Sciences of the United States of America. 107: 17503-8. PMID 20876145 DOI: 10.1073/pnas.1011295107  1
2010 Ghong TH, Han SH, Chung JM, Byun JS, Kim TJ, Aspnes DE, Kim YD, Park IH, Kim YW. Nondestructive analysis of coated periodic nanostructures from optical data. Optics Letters. 35: 733-5. PMID 20195335 DOI: 10.1364/OL.35.000733  1
2010 Liu X, Aspnes DE. Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 583-589. DOI: 10.1116/1.3442805  1
2010 Adles EJ, Aspnes DE. Chemical-etch-assisted growth of epitaxial zinc oxide Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 689-692. DOI: 10.1116/1.3305814  1
2010 Yoon JJ, Kim TJ, Jung YW, Aspnes DE, Kim YD, Kim HJ, Chang YC, Shin SH, Song JD. Dielectric functions and interband transitions of In1-xAl x Sb alloys Applied Physics Letters. 97. DOI: 10.1063/1.3488827  1
2010 Choi SG, Aspnes DE, Fuchser AL, Martinez-Tomas C, Sanjoś VM, Levi DH. Ellipsometric study of single-crystal γ-InSe from 1.5 to 9.2 eV Applied Physics Letters. 96. DOI: 10.1063/1.3420080  1
2009 Franzen S, Rhodes C, Cerruti M, Gerber RW, Losego M, Maria JP, Aspnes DE. Plasmonic phenomena in indium tin oxide and ITO-Au hybrid films. Optics Letters. 34: 2867-9. PMID 19756132 DOI: 10.1364/OL.34.002867  1
2009 Kim TJ, Yoon JJ, Hwang SY, Aspnes DE, Kim YD, Kim HJ, Chang YC, Song JD. Interband transitions of InAsx Sb1-x alloy films Applied Physics Letters. 95. DOI: 10.1063/1.3216056  1
2009 Liu X, Aspnes DE. Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition Applied Physics Letters. 94. DOI: 10.1063/1.3157266  1
2009 Arwin H, Aspnes DE. Follow the light: Ellipsometry and polarimetry Physics Today. 62: 70-71. DOI: 10.1063/1.3141950  1
2008 Liu X, Aspnes DE. Thickness inhomogenities in the organometallic chemical vapor deposition of GaP Applied Physics Letters. 93. DOI: 10.1063/1.3029742  1
2008 Jung YW, Kim TJ, Yoon JJ, Kim YD, Aspnes DE. Model dielectric functions for Alx Ga1-xAs alloys of arbitrary compositions Journal of Applied Physics. 104. DOI: 10.1063/1.2952536  1
2008 Yoon JJ, Ghong TH, Byun JS, Kim YD, Aspnes DE, Kim HJ, Chang YC, Song JD. Optical properties of Inx Al1-x As alloy films Applied Physics Letters. 92. DOI: 10.1063/1.2909546  1
2008 Rhodes C, Cerruti M, Efremenko A, Losego M, Aspnes DE, Maria JP, Franzen S. Dependence of plasmon polaritons on the thickness of indium tin oxide thin films Journal of Applied Physics. 103. DOI: 10.1063/1.2908862  1
2008 Ghong TH, Kim TJ, Jung YW, Kim YD, Aspnes DE. Overlayer effects in the critical-point analysis of ellipsometric spectra: Application to Inx Ga1-x As alloys Journal of Applied Physics. 103. DOI: 10.1063/1.2902502  1
2008 Kim TJ, Yoon JJ, Kim YD, Aspnes DE, Klein MV, Ko DS, Kim YW, Elarde VC, Coleman JJ. Analysis of interface layers by spectroscopic ellipsometry Applied Surface Science. 255: 640-642. DOI: 10.1016/j.apsusc.2008.07.005  1
2008 Liu X, Kim IK, Aspnes DE. Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real-time spectroscopic polarimetry Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1312-1315. DOI: 10.1002/pssc.200777896  1
2008 Asar M, Aspnes DE. The nearly aligned rotating-monoplate compensator Physica Status Solidi (a) Applications and Materials Science. 205: 739-742. DOI: 10.1002/pssa.200777871  1
2008 Choi SG, Aspnes DE, Stoute NA, Kim YD, Kim HJ, Chang YC, Palmstrøm CJ. Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters Physica Status Solidi (a) Applications and Materials Science. 205: 884-887. DOI: 10.1002/pssa.200777848  1
2008 Adles EJ, Aspnes DE. The anisotropic bond model of nonlinear optics Physica Status Solidi (a) Applications and Materials Science. 205: 728-731. DOI: 10.1002/pssa.200777846  1
2007 Liu X, Kim IK, Aspnes DE. Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1448-1452. DOI: 10.1116/1.2750345  1
2007 Jung YW, Ghong TH, Kim YD, Aspnes DE. Effect of overlayers on critical-point parameters in the analysis of ellipsometric spectra Applied Physics Letters. 91. DOI: 10.1063/1.2784187  1
2007 Kim TJ, Ghong TH, Kim YD, Aspnes DE, Klein MV, Ko DS, Kim YW, Elarde VC, Coleman JJ. Investigation of effective-medium approximation, alloy, average-composition, and graded-composition models for interface analysis by spectroscopic ellipsometry Journal of Applied Physics. 102. DOI: 10.1063/1.2781519  1
2007 Choi SG, Palmstrøm CJ, Kim YD, Aspnes DE, Kim HJ, Chang YC. Dielectric functions and electronic structure of InAs xP 1-x films on InP Applied Physics Letters. 91. DOI: 10.1063/1.2766682  1
2007 Aspnes DE. Electrodynamic properties of nanoscopically inhomogeneous materials Aip Conference Proceedings. 885: 225-239. DOI: 10.1063/1.2563196  1
2007 Kim IK, Aspnes DE. Analytic determination of n, κ, and d of an absorbing film from polarimetric data in the thin-film limit Journal of Applied Physics. 101. DOI: 10.1063/1.2434004  1
2007 Lucovsky G, Fulton CC, Ju BS, Stoute NA, Seo H, Aspnes DE, Lüning J. Corrigendum to: "Suppression of Jahn-Teller term-split band edge states in the X-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3". [Radiat. Phys. Chem. 75 (2006) 1591-1595] (DOI:10.1016/j.radphyschem.2006.05.004) Radiation Physics and Chemistry. 76: 907. DOI: 10.1016/j.radphyschem.2007.01.001  1
2006 Lucovsky G, Fleetwood DM, Lee S, Seo H, Schrimpf RD, Felix JA, Lüning J, Fleming LB, Ulrich M, Aspnes DE. Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates Ieee Transactions On Nuclear Science. 53: 3644-3648. DOI: 10.1109/TNS.2006.886211  1
2006 Brinkley MK, Powell GD, Aspnes DE. Systematic approach for analyzing reflectance-difference spectra: Application to silicon-dielectric interfaces Applied Physics Letters. 88. DOI: 10.1063/1.2204844  1
2006 Kim IK, Aspnes DE. Toward nκd spectroscopy: Analytic solution of the three-phase model of polarimetry in the thin-film limit Applied Physics Letters. 88. DOI: 10.1063/1.2203967  1
2006 Lucovsky G, Fulton CC, Ju BS, Stoute NA, Tao S, Aspnes DE, Lüning J. Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 Radiation Physics and Chemistry. 75: 1591-1595. DOI: 10.1016/j.radphyschem.2006.05.004  1
2006 Ghong TH, Kim YD, Aspnes DE, Klein MV, Ko DS, Kim YW, Elarde V, Coleman J. Interface analysis of an AlGaAs multilayer system by using spectroscopic ellipsometry Journal of the Korean Physical Society. 48: 1601-1605.  1
2005 Choi SG, Srivastava SK, Palmstrøm CJ, Kim YD, Cooper SL, Aspnes DE. Optical properties of (GaSb) 3n(AlSb) n (1≤n≤5) superlattices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1149-1153. DOI: 10.1116/1.1881552  1
2005 Peng HJ, Adles EJ, Wang JFT, Aspnes DE. Relative bulk and interface contributions to optical second-harmonic generation in silicon Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/PhysRevB.72.205203  1
2005 Choi SG, Palmstrøm CJ, Kim YD, Cooper SL, Aspnes DE. Dielectric functions of Al x Ga 1-x Sb (0.00≤x≤0.39) alloys from 1.5 to 6.0 eV Journal of Applied Physics. 98. DOI: 10.1063/1.2134890  1
2005 Peng HJ, Aspnes DE. Dipole-radiation model for terahertz radiation from semiconductors Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1937992  1
2005 Lucovsky G, Hong JG, Fulton CC, Stoute NA, Zou Y, Nemanich RJ, Aspnes DE, Ade H, Schlom DG. Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra Microelectronics Reliability. 45: 827-830. DOI: 10.1016/j.microrel.2004.11.038  1
2005 Aspnes DE. Real-time diagnostics for metalorganic vapor phase epitaxy Physica Status Solidi (B) Basic Research. 242: 2551-2560. DOI: 10.1002/pssb.200541109  1
2005 Aspnes DE. Recent advances in optical characterization of thin films by spectroscopic ellipsometry Proceedings, Annual Technical Conference - Society of Vacuum Coaters. 337-340.  1
2004 Aspnes DE. Optimizing precision of rotating-analyzer and rotating-compensator ellipsometers. Journal of the Optical Society of America. a, Optics, Image Science, and Vision. 21: 403-10. PMID 15005405  1
2004 Kim S, Flock KL, Asar M, Kim IK, Aspnes DE. Real-time characterization of GaSb homo- and heteroepitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2233-2239. DOI: 10.1116/1.1771669  1
2004 Peng HJ, Aspnes DE. Calculation of bulk third-harmonic generation from crystalline Si with the simplified bond hyperpolarizability model [60] Physical Review B - Condensed Matter and Materials Physics. 70: 1-8. DOI: 10.1103/PhysRevB.70.165312  1
2004 Ghong TH, Kim TJ, Kim YD, Aspnes DE. Spectroscopic ellipsometric analysis of interfaces: Comparison of alloy and effective-medium-approximation approaches to a CdMgTe multilayer system Applied Physics Letters. 85: 946-948. DOI: 10.1063/1.1779965  1
2004 Ihn YS, Kim TJ, Kim YD, Aspnes DE, Kossut J. Optical properties of Cd 1-xMg xTe (x=0.00, 0.23, 0.31, and 0.43) alloy films Applied Physics Letters. 84: 693-695. DOI: 10.1063/1.1639506  1
2004 Flock K, Kim SJ, Asar M, Kim IK, Aspnes DE. Integrated rotating-compensator polarimeter for real-time measurements and analysis of organometallic chemical vapor deposition Thin Solid Films. 455: 639-644. DOI: 10.1016/j.tsf.2004.01.069  1
2004 Ebert K, Aspnes DE. Biplate artifacts in rotating-compensator ellipsometers Thin Solid Films. 455: 779-783. DOI: 10.1016/j.tsf.2004.01.033  1
2004 Ihn YS, Kim TJ, Ghong TH, Kim YD, Aspnes DE, Kossut J. Parametric modeling of the dielectric functions of Cd1-xMg xTe alloy films Thin Solid Films. 455: 222-227. DOI: 10.1016/j.tsf.2004.01.015  1
2004 Asar M, Aspnes DE. Optical anisotropy relevant to rotating-compensator polarimeters: Application to the monoplate retarder Thin Solid Films. 455: 50-53. DOI: 10.1016/j.tsf.2003.12.044  1
2004 Aspnes DE. Expanding horizons: New developments in ellipsometry and polarimetry Thin Solid Films. 455: 3-13. DOI: 10.1016/j.tsf.2003.12.038  1
2004 Mori T, Aspnes DE. Comparison of the capabilities of rotating-analyzer and rotating-compensator ellipsometers by measurements on a single system Thin Solid Films. 455: 33-38. DOI: 10.1016/j.tsf.2003.12.037  1
2003 Aspnes DE, Hansen JK, Peng HJ, Powell GD, Wang JFT. Simplified bond-hyperpolarizability model of second- and fourth-harmonic generation: Application to Si-SiO2 interfaces Physica Status Solidi (B) Basic Research. 240: 509-517. DOI: 10.1002/pssb.200303825  1
2003 Ihn YS, Kim TJ, Kim YD, Aspnes DE, Kossut J. Dielectric Functions of Cd1-xMgxTe Alloy Films by Using Spectroscopic Ellipsometry Journal of the Korean Physical Society. 43: 634-637.  1
2003 Kim TJ, Ghong TH, Kim YD, Kim SJ, Aspnes DE, Mori T, Yao T, Koo BH. Dielectric functions of InxGa1-xAs alloys Physical Review B - Condensed Matter and Materials Physics. 68: 1153231-11532310.  1
2003 Hansen JK, Peng HJ, Aspnes DE. Application of the simplified bond-hyperpolarizability model to fourth-harmonic generation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1798-1803.  1
2003 Dow JD, Aspnes DE. Journal of Vaccum Science and Technology B: Microelectronics and Nanometer Structures: Preface Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1744.  1
2003 Ihn YS, Ghong TH, Kim YD, Kim SJ, Aspnes DE, Yao T, Koo BH. Optical properties of InGaAs alloy films in the E2 region by spectroscopic ellipsometry Journal of the Korean Physical Society. 42: S242-S245.  1
2003 Ghong TH, Kim TJ, Kim YD, Kim SJ, Aspnes DE, Choi YD, Yu YM. Study of the dielectric function of ZnS by spectroscopic ellipsometry Journal of the Korean Physical Society. 42: S238-S241.  1
2002 Wang JFT, Powell GD, Johnson RS, Lucovsky G, Aspnes DE. Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1699-1705. DOI: 10.1116/1.1493783  1
2002 Kim TJ, Ihn YS, Kim YD, Kim SJ, Aspnes DE, Yao T, Shim K, Koo BH. Pseudodielectric functions of InGaAs alloy films grown on InP Applied Physics Letters. 81: 2367-2369. DOI: 10.1063/1.1509093  1
2002 Blickle V, Flock K, Dietz N, Aspnes DE. Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV Applied Physics Letters. 81: 628-630. DOI: 10.1063/1.1492022  1
2002 Yu ET, Aspnes DE. Preface Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1581.  1
2002 Edwards NV, Lindquist OPA, Madsen LD, Zollner S, Järrehdahl K, Cobet C, Peters S, Esser N, Konkar A, Aspnes DE. Determination and critical assessment of the optical properties of common substrate materials used in III-V nitride heterostructures with vacuum ultraviolet spectroscopic ellipsometry Materials Research Society Symposium - Proceedings. 693: 509-514.  1
2001 Li SF, Opsal J, Chu H, Aspnes DE. Detection and analysis of depolarization artifacts in rotating-compensator polarimeters. Journal of the Optical Society of America. a, Optics, Image Science, and Vision. 18: 426-34. PMID 11205990  1
2001 Ebert M, Aspnes DE. Investigation of noise in a spectrometer system using a short-arc source Review of Scientific Instruments. 72: 3477-3479. DOI: 10.1063/1.1384423  1
2001 Lindquist OPA, Järrendahl K, Peters S, Zettler JT, Cobet C, Esser N, Aspnes DE, Henry A, Edwards NV. Ordinary and extraordinary dielectric functions of 4H- and 6H-SiC from 3.5 to 9.0 eV Applied Physics Letters. 78: 2715-2717. DOI: 10.1063/1.1369617  1
2001 Yoo SD, Aspnes DE. Elimination of endpoint-discontinuity artifacts in the analysis of spectra in reciprocal space Journal of Applied Physics. 89: 8183-8192. DOI: 10.1063/1.1368391  1
2001 Hyun J, Aspnes DE, Cuomo JJ. Nondestructive measurement of a glass transition temperature at spin-cast semicrystalline polymer surfaces [1] Macromolecules. 34: 2395-2397. DOI: 10.1021/ma0012797  1
2001 Ebert M, Bell KA, Flock K, Aspnes DE. Investigation and control of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy Physica Status Solidi (a) Applied Research. 184: 79-87. DOI: 10.1002/1521-396X(200103)184:1<79::AID-PSSA79>3.0.CO;2-B  1
2001 Seong GY, Bang CY, Kim YD, Wang J, Aspnes DE, Koo BH, Yao T. Spectroscopic ellipsometry study of InGaAs alloy films grown on InP Journal of the Korean Physical Society. 39: S389-S392.  1
2001 Aspnes DE. Linear and nonlinear optical spectroscopy of surfaces and interfaces Physica Status Solidi (a) Applied Research. 188: 1353-1360.  1
2001 Kim TJ, Koo MS, Lee MS, Kim YD, Aspnes DE, Jonker BT. Spectroscopic ellipsometric study of the dielectric function of ZnSe and its overlayer Journal of the Korean Physical Society. 39: S372-S375.  1
2001 Bang CY, Lee MS, Kim TJ, Kim YD, Aspnes DE, Yu YM, O BS, Choi YD. Above bandgap optical properties of ZnS and ZnS1-xTex alloys grown by using hot-wall epitaxy Journal of the Korean Physical Society. 39: 462-465.  1
2001 Lindquist OPA, Järrendahl K, Arwin H, Peters S, Zettler JT, Cobet C, Esser N, Aspnes DE, Henry A, Edwards NV. Ordinary and extra-ordinary dielectric function of 4H- and 6H-SiC in the 0.7 to 9.0 eV photon energy range Materials Research Society Symposium - Proceedings. 640: H5.24.1-H5.24.6.  1
2000 Edwards NV, Madsen LD, Robbie K, Powell GD, Järrendahl K, Cobet C, Esser N, Richter W, Aspnes DE. Real-time assessment of overlayer removal on 4H-SiC surfaces: Techniques and relevance to contact formation Materials Science Forum. 338: 1033-1036. DOI: 10.4028/www.scientific.net/MSF.338-342.1033  1
2000 Leng J, Li S, Opsal J, Aspnes D, Lee BH, Lee J. Rotating compensator spectroscopic ellipsometry (RCSE) and its application to high-k dielectric film HfO2 Proceedings of Spie - the International Society For Optical Engineering. 4099: 228-234. DOI: 10.1117/12.405823  1
2000 Bell KA, Ebert M, Yoo SD, Flock K, Aspnes DE. Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 1184-1189. DOI: 10.1116/1.582323  1
2000 Ebert M, Bell KA, Yoo SD, Flock K, Aspnes DE. In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy Thin Solid Films. 364: 22-27. DOI: 10.1016/S0040-6090(99)00920-7  1
2000 Edwards NV, Bremser MD, Batchelor AD, Buyanova IA, Madsen LD, Yoo SD, Wethkamp T, Wilmers K, Cobet C, Esser N, Davis RF, Aspnes DE, Monemar B. Optical characterization of wide bandgap semiconductors Thin Solid Films. 364: 98-106. DOI: 10.1016/S0040-6090(99)00903-7  1
2000 Edwards NV, Järrendahl K, Aspnes DE, Robbie K, Powell GD, Cobet C, Esser N, Richter W, Madsen LD. Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry Surface Science. 464: L703-L707. DOI: 10.1016/S0039-6028(00)00689-0  1
2000 Hyun J, Barletta P, Koh K, Yoo S, Oh J, Aspnes DE, Cuomo JJ. Effect of Ar+ ion beam in the process of plasma surface modification of PET films Journal of Applied Polymer Science. 77: 1679-1683. DOI: 10.1002/1097-4628(20000822)77:8<1679::AID-APP4>3.0.CO;2-F  1
2000 Rossow U, Aspnes DE. Characterization of AlxGa1-xN-compound layers by reflectance difference spectroscopy Physica Status Solidi (a) Applied Research. 177: 157-163. DOI: 10.1002/(SICI)1521-396X(200001)177:1<157::AID-PSSA157>3.0.CO;2-P  1
2000 Lastras-Martínez LF, Ruf T, Konuma M, Cardona M, Aspnes DE. Isotopic effects on the dielectric response of Si around the E1 gap Physical Review B - Condensed Matter and Materials Physics. 61: 12946-12951.  1
2000 Rossow U, Mantese L, Aspnes DE. Surface-induced optical anisotropy of Si and Ge Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2229-2231.  1
2000 Lee H, Kim IY, Powell J, Aspnes DE, Lee S, Peiris F, Furdyna JK. Dielectric function and bowing parameter of Zn1-xMgxSe and Zn1-xBexSe alloys Journal of the Korean Physical Society. 37: 1012-1016.  1
2000 Koo MS, Kim TJ, Lee MS, Oh MS, Kim YD, Yoo SD, Aspnes DE, Jonker BT. Dielectric function of epitaxial ZnSe films Applied Physics Letters. 77: 3364-3366.  1
2000 Lee H, Kim IY, Powell J, Aspnes DE, Lee S, Peiris F, Furdyna JK. Visible-near ultraviolet ellipsometric study of Zn1-xMgxSe and Zn1-xBexSe alloys Journal of Applied Physics. 88: 878-882.  1
2000 Aspnes DE, Mantese L, Bell KA, Rossow U. Coherence effects and time dependences of the optical response of surfaces and interfaces of optically absorbing materials Physica Status Solidi (B) Basic Research. 220: 709-715.  1
2000 Yoo SD, Aspnes DE, Lastras-Martínez LF, Ruf T, Konuma M, Cardona M. High-resolution spectroscopy with reciprocal-space analysis: Application to isotopically pure Si Physica Status Solidi (B) Basic Research. 220: 117-125.  1
2000 Choi SG, Kim YD, Yoo SD, Aspnes DE, Woo DH, Kim SH. Optical properties of AlxGa1 - XP (0 ≤ x ≤ 0.52) alloys Journal of Applied Physics. 87: 1287-1290.  1
2000 Bell KA, Ebert M, Yoo SD, Flock K, Aspnes DE. Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor Journal of Electronic Materials. 29: 106-111.  1
2000 Aspnes DE. Real-time monitoring of epitaxial growth Leos Summer Topical Meeting. 25-26.  1
1999 Edwards NV, Batchelor AD, Buyanova IA, Madsen LD, Bremser MD, Davis RF, Aspnes DE, Monemar B. Relaxation phenomena in GaN/ AIN/ 6H-SIC heterostructures Materials Research Society Symposium - Proceedings. 537: G3.78.  1
1999 Edwards NV, Batchelor AD, Buyanova IA, Madsen LD, Bremser MD, Davis RF, Aspnes DE, Monemar B. Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures Mrs Internet Journal of Nitride Semiconductor Research. 4.  1
1999 Kim TJ, Kim YD, Yoo SD, Aspnes DE, Kossut J. Dielectric function of Cd0.57Mg0.43Te alloy film studied by ellipsometry Journal of the Korean Physical Society. 34: S496-S498.  1
1999 Rossow U, Aspnes DE, Ambacher O, Cimalla V, Edwards NV, Bremser M, Davis RF, Schaefer JA, Stutzmann M. Reflectance difference spectroscopy characterization of AlxGa1 xN-compound layers Physica Status Solidi (B) Basic Research. 216: 215-220.  1
1999 Rossow U, Mantese L, Aspnes DE, Bell KA, Ebert M. Linear optical properties of Si surfaces and nanostructures Physica Status Solidi (B) Basic Research. 215: 725-729.  1
1999 Mantese L, Xue QK, Sakurai T, Aspnes DE. Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 1652-1656.  1
1999 Mantese L, Bell KA, Aspnes DE, Rossow U. Photon-induced localization in optically absorbing materials Physics Letters, Section a: General, Atomic and Solid State Physics. 253: 93-97.  1
1999 Leng JM, Opsal J, Aspnes DE. Combined beam profile reflectometry, beam profile ellipsometry and ultraviolet-visible spectrophotometry for the characterization of ultrathin oxide-nitride-oxide films on silicon Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 380-384.  1
1998 Leng J, Opsal J, Chu H, Senko M, Aspnes DE. Analytic representations of the dielectric functions of crystalline and amorphous Si and crystalline Ge for very large scale integrated device and structural modeling Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1654-1657. DOI: 10.1116/1.581137  1
1998 Edwards NV, Bremser MD, Davis RF, Batchelor AD, Yoo SD, Karan CF, Aspnes DE. Trends in residual stress for GaN/AlN/6H-SiC heterostructures Applied Physics Letters. 73: 2808-2810. DOI: 10.1063/1.122597  1
1998 Aspnes DE, Dietz N. Optical approaches for controlling epitaxial growth Applied Surface Science. 130: 367-376. DOI: 10.1016/S0169-4332(98)00085-3  1
1998 Aspnes DE, Mantese L, Bell KA, Rossow U. Many-body and correlation effects in surface and interface spectra of optically absorbing materials Physica Status Solidi (a) Applied Research. 170: 199-210.  1
1998 Woo DH, Han IK, Choi WJ, Lee S, Kim HJ, Lee JI, Kim SH, Kang KN, Choi SG, Kim YD, Yoo SD, Aspnes DE, Rhee SJ, Woo JC. Optical characterization of GaAs/AlAs short period superlattices Microelectronic Engineering. 43: 265-270.  1
1998 Rossow U, Lindner K, Lübbe M, Aspnes DE, Zahn DRT. Reflectance difference spectroscopy spectra of clean (3×2), (2×1), and c(2×2) 3C-SiC(001) surfaces: New evidence for surface state contributions to optical anisotropy spectra Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2355-2357.  1
1998 Aspnes DE, Mantese L, Bell KA, Rossow U. Photon-induced localization and final-state correlation effects in optically absorbing materials Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2367-2372.  1
1998 Edwards NV, Yoo SD, Bremser MD, Horton MN, Perkins NR, Weeks TW, Liu H, Stall RA, Kuech TF, Davis RF, Aspnes DE. Spectroscopic ellipsometry and low-temperature reflectance: Complementary analysis of GaN thin films Thin Solid Films. 313: 187-192.  1
1998 Bell KA, Mantese L, Rossow U, Aspnes DE. Systematic differences among nominal reference dielectric function spectra for crystalline Si as determined by spectroscopic ellipsometry Thin Solid Films. 313: 161-166.  1
1998 Mantese L, Bell KA, Rossow U, Aspnes DE. Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states Thin Solid Films. 313: 557-560.  1
1998 Yoo SD, Edwards NV, Aspnes DE. Analysis of optical spectra by Fourier methods Thin Solid Films. 313: 143-148.  1
1998 Opsal J, Fanton J, Chen J, Leng J, Wei L, Uhrich C, Senko M, Zaiser C, Aspnes DE. Broadband spectral operation of a rotating-compensator ellipsometer Thin Solid Films. 313: 58-61.  1
1998 Leng J, Opsal J, Chu H, Senko M, Aspnes DE. Analytic representations of the dielectric functions of materials for device and structural modeling Thin Solid Films. 313: 132-136.  1
1998 Rossow U, Mantese L, Aspnes DE. Lineshapes of surface induced optical anisotropy spectra measured by RDS/RAS Applied Surface Science. 123: 237-242.  1
1997 Edwards NV, Yoo SD, Bremser MD, Zheleva T, Horton MN, Perkins NR, Weeks TW, Liu H, Stall RA, Kuech TF, Davis RF, Aspnes DE. Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films Materials Science and Engineering B. 50: 134-141.  1
1997 Choi SG, Kim YD, Klein MV, Yoo SD, Aspnes DE, Xin SH, Furdyna JK. Spectroscopic ellipsometric study of Zn 1-xMn xTe films grown on GaAs Journal of the Korean Physical Society. 31: 202-205.  1
1997 Kim YD, Ko YD, Choi SG, Yoo SD, Aspnes DE, Jonker BT. Above bandgap dielectric function of epitaxial ZnSe layers Journal of the Korean Physical Society. 31: L553-L555.  1
1997 Choi SG, Kim YD, Yoo SD, Aspnes DE, Rhee SJ, Woo JC, Woo DH, Kim SH, Kang KN. Spectroscopic ellipsometry study of GaAs/AIAs superlattices and Al 0.5Ga 0.5As alloy Journal of the Korean Physical Society. 30: S108-S112.  1
1997 Choi SG, Kim YD, Yoo SD, Aspnes DE, Miotkowski I, Ramdas AK. Ellipsometric studies of Cd1-xMgxTe (0≤x≤0.5) alloys Applied Physics Letters. 71: 249-251.  1
1997 Mantese L, Bell KA, Rossow U, Aspnes DE. Evidence of near-surface localization of excited electronic states in crystalline Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1196-1200.  1
1997 Bell KA, Mantese L, Rossow U, Aspnes DE. Surface and interface effects on ellipsometric spectra of crystalline Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1205-1211.  1
1997 Edwards NV, Yoo SD, Bremser MD, Weeks TW, Nam OH, Davis RF, Liu H, Stall RA, Horton MN, Perkins NR, Kuech TF, Aspnes DE. Variation of GaN valence bands with biaxial stress and quantification of residual stress Applied Physics Letters. 70: 2001-2003.  1
1997 Bremser MD, Perry WG, Zheleva T, Edwards NV, Nam OH, Parikh N, Aspnes DE, Davis RF. Growth, doping and characterization of AlxGa1 - XN thin film alloys on 6H-SiC(0001) substrates Diamond and Related Materials. 6: 196-201.  1
1997 Bachmann KJ, Höpfner C, Sukidi N, Miller AE, Harris C, Aspnes DE, Dietz NA, Tran HT, Beeler S, Ito K, Banks HT, Rossow U. Molecular layer epitaxy by real-time optical process monitoring Applied Surface Science. 112: 38-47.  1
1997 Kim YD, Choi SG, Klein MV, Yoo SD, Aspnes DE, Xin SH, Furdyna JK. Spectroscopic ellipsometric characterization of undoped ZnTe films grown on GaAs Applied Physics Letters. 70: 610-612.  1
1997 Aspnes DE. Real-time optical analysis and control of semiconductor epitaxy: Progress and opportunity Solid State Communications. 101: 85-92.  1
1997 Edwards NV, Yoo SD, Bremser MD, Horton MN, Perkins NR, Weeks TW, Liu H, Stall RA, Kuech TF, Davis RF, Aspnes DE. Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters Materials Research Society Symposium - Proceedings. 449: 781-786.  1
1997 Aspnes DE, Dietz N, Rossow U, Bachmann KJ. Multilevel approaches toward monitoring and control of semiconductor epitaxy Materials Research Society Symposium - Proceedings. 448: 451-462.  1
1997 Hinds BJ, Aspnes DE, Lucovsky G. Low pH chemical etch route for smooth H-terminated Si(100) and study of subsequent chemical stability Materials Research Society Symposium - Proceedings. 477: 191-196.  1
1997 Rossow U, Edwards NV, Bremser MD, Kern RS, Liu H, Davis RF, Aspnes DE. In-plane optical anisotropies of AlxGa1-xN films in their regions of transparency Materials Research Society Symposium - Proceedings. 449: 835-840.  1
1996 Yoo SD, Aspnes DE, Rhee SJ, Woo JC. Reciprocal-space analysis of photoluminescence and photoluminescence excitation spectra Applied Physics Letters. 68: 3230-3232. DOI: 10.1063/1.116446  1
1996 Mantese L, Rossow U, Aspnes DE. Surface-induced optical anisotropy of oxidized, clean, and hydrogenated vicinal Si(001) surfaces Applied Surface Science. 107: 35-41. DOI: 10.1016/S0169-4332(96)00479-5  1
1996 Rossow U, Frotscher U, Pietryga C, Aspnes DE, Richter W. Porous silicon layers as a model system for nanostructures Applied Surface Science. 104: 552-556. DOI: 10.1016/S0169-4332(96)00201-2  1
1996 Rossow U, Mantese L, Yasuda T, Aspnes DE. Hydrogenated and oxidized vicinal Si(001) surfaces investigated by reflectance-difference spectroscopy Applied Surface Science. 104: 137-140. DOI: 10.1016/S0169-4332(96)00134-1  1
1996 Rossow U, Frotscher U, Pietryga C, Richter W, Aspnes DE. Interpretation of the dielectric function of porous silicon layers Applied Surface Science. 102: 413-416. DOI: 10.1016/0169-4332(96)00089-X  1
1996 Dietz N, Rossow U, Aspnes DE, Bachmann KJ. Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions Applied Surface Science. 102: 47-51. DOI: 10.1016/0169-4332(96)00017-7  1
1996 Mantese L, Aspnes DE. Interpretation of surface-induced optical anisotropy of clean, hydrogenated, and oxidized vicinal silicon surfaces investigated by reflectance-difference spectroscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3070-3074.  1
1996 Schmidt D, Niimi H, Hinds BJ, Aspnes DE, Lucovsky G. New approach to preparing smooth Si(100) surfaces: Characterization by spectroellipsometry and validation of Si/SiO2 interfaces properties in metal-oxide-semiconductor devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 2812-2816.  1
1996 Dietz N, Bachmann KJ, Aspnes DE. Optical investigations of surface processes in GaP heteroepitaxy on silicon under pulsed chemical beam epitaxy conditions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3040-3046.  1
1996 Bremser MD, Perry WG, Zheleva T, Edwards NV, Nam OH, Parikh N, Aspnes DE, Davis RF. Growth, doping and characterization of Al xGa 1-x N thin film alloys on 6H-SiC(0001) substrates Mrs Internet Journal of Nitride Semiconductor Research. 1: 13d.  1
1996 Edwards NV, Bremser MD, Weeks TW, Kern RS, Davis RF, Aspnes DE. Real-time assessment of overlayer removal on GaN, AIN, and AIGaN surfaces using spectroscopic ellipsometry Applied Physics Letters. 69: 2065-2067.  1
1996 Dietz N, Rossow U, Aspnes DE, Bachmann KJ. Real-time optical monitoring of GaxIn1-xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions Journal of Crystal Growth. 164: 34-39.  1
1996 Aspnes DE. Optical approaches to determine near-surface compositions during epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 960-966.  1
1996 Kamiya I, Mantese L, Aspnes DE, Kisker DW, Fuoss PH, Stephenson GB, Brennan S. Optical characterization of surfaces during epitaxial growth using RDS and GIXS Journal of Crystal Growth. 163: 67-77.  1
1996 Dietz N, Rossow U, Aspnes DE, Sukidi N, Bachmann KJ. Real-time optical monitoring of GaxIn1-xGaP heterostructures on silicon Materials Research Society Symposium - Proceedings. 406: 127-132.  1
1996 Rossow U, Mantese L, Frotscher U, Aspnes DE, Richter W. In-situ and ex-situ studies of silicon interfaces and nanostructures by ellipsometry and RDS Materials Research Society Symposium - Proceedings. 406: 371-376.  1
1996 Rossow U, Frotscher U, Aspnes DE, Richter W. Towards a microscopic interpretation of the dielectric function of porous silicon Materials Research Society Symposium - Proceedings. 405: 209-214.  1
1996 Bremser MD, Perry WG, Edwards NV, Zheleva T, Parikh N, Aspnes DE, Davis RF. Growth and doping of AlxGa1-xN deposited directly on α(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 395: 195-200.  1
1996 Edwards NV, Bremser MD, Weeks TW, Kern RS, Liu H, Stall RA, Wickenden AE, Doverspike K, Gaskill DK, Freitas JA, Rossow U, Davis RF, Aspnes DE. Analysis of strain in GaN on Al2O3 and 6H-SiC: near-bandedge phenomena Materials Research Society Symposium - Proceedings. 395: 405-410.  1
1996 Lin JL, Jaloviar SG, Mantese L, Aspnes DE, McCaughan L, Lagally MG. Comparative study of the reflectance difference spectrum from Si(001) using reflectance difference spectroscopy/low-energy electron diffraction/ scanning tunneling microscopy Materials Research Society Symposium - Proceedings. 406: 401-405.  1
1995 Philips BA, Kamiya I, Hingerl K, Florez LT, Aspnes DE, Mahajan S, Harbison JP. Real-time observation of atomic ordering in (001) In0.53Ga0.47As epitaxial layers. Physical Review Letters. 74: 3640-3643. PMID 10058256 DOI: 10.1103/PhysRevLett.74.3640  1
1995 Yasuda T, Mantese L, Rossow U, Aspnes DE. Surface-Induced Optical Anisotropies of Single-Domain (2 x 1) Reconstructed (001) Si and Ge Surfaces. Physical Review Letters. 74: 3431-3434. PMID 10058199 DOI: 10.1103/PhysRevLett.74.3431  1
1995 Lee H, Klein MV, Fu LP, Gilliland GD, Hjalmarson HP, Aspnes DE, Hsieh KC, Kim J, Yu JG, Craford MG. Observation of quasidirect transitions in In1-xGaxP/graded GaP (0.58 <= x <= 0.75) alloys near the Gamma -X1 crossover. Physical Review. B, Condensed Matter. 51: 4186-4192. PMID 9979257  0.72
1995 Aspnes DE. Optical Approaches to the Determination of Composition of Semiconductor Alloys during Epitaxy Ieee Journal On Selected Topics in Quantum Electronics. 1: 1054-1063. DOI: 10.1109/2944.488682  1
1995 Lee H, Klein MV, Fu LP, Gilliland GD, Hjalmarson HP, Aspnes DE, Hsieh KC, Kim J, Yu JG, Craford MG. Observation of quasidirect transitions in In1-xGaxP/graded GaP (0.58≤x≤0.75) alloys near the Γ-X1 crossover Physical Review B. 51: 4186-4192. DOI: 10.1103/PhysRevB.51.4186  1
1995 Gilmore W, Aspnes DE. Performance capabilities of reflectometers and ellipsometers for compositional analysis during AlxGa1-xAs epitaxy Applied Physics Letters. 66: 1617-1619. DOI: 10.1063/1.113870  1
1995 Aspnes DE. Observation and analysis of epitaxial growth with reflectance-difference spectroscopy Materials Science and Engineering B. 30: 109-119. DOI: 10.1016/0921-5107(94)09005-X  1
1995 Edwards NV, Bremser MD, Weeks TW, Kern RS, Davis RF, Aspnes DE. Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry Applied Physics Letters. 2065.  1
1995 Kisker DW, Stephenson GB, Kamiya I, Fuoss PH, Aspnes DE, Mantese L, Brennan S. Investigation of the relationship between reflectance difference spectroscopy and surface structure using grazing incidence x-ray scattering Physica Status Solidi (a) Applied Research. 152: 9-21.  1
1994 Yasuda T, Aspnes DE. Optical-standard surfaces of single-crystal silicon for calibrating ellipsometers and reflectometers. Applied Optics. 33: 7435-8. PMID 20941306  1
1994 Yasuda T, Aspnes DE, Lee DR, Biorkman CH, Lucovskv G. Optical anisotropy of singular and vicinal Si-SiO2 interfaces and H-terminated Si surfaces interfaces and H-terminated Si surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1152-1157. DOI: 10.1116/1.579183  0.6
1994 Lee H, Biswas D, Klein MV, Morkoç H, Aspnes DE, Choe BD, Kim J, Griffiths CO. Study of strain and disorder of InxGa1-xP/(GaAs, graded GaP) (0.25≤x≤0.8) using spectroscopic ellipsometry and Raman spectroscopy Journal of Applied Physics. 75: 5040-5051. DOI: 10.1063/1.355746  1
1994 Aspnes DE, Tamargo MC, Brasil MJSP, Nahory RE, Schwarz SA. As capture and the growth of ultrathin InAs layers on InP Applied Physics Letters. 64: 3279-3281. DOI: 10.1063/1.111309  1
1994 Aspnes DE. Fourier critical point analysis: extension to Gaussian lineshapes Solar Energy Materials and Solar Cells. 32: 413-419. DOI: 10.1016/0927-0248(94)90104-X  1
1994 Aspnes DE. Real-time optical diagnostics for epitaxial growth Surface Science. 307: 1017-1027. DOI: 10.1016/0039-6028(94)91533-4  1
1994 Bennett BR, del Alamo JA, Sinn MT, Peiró F, Cornet A, Aspnes DE. Origin of optical anisotropy in strained InxGa1-xAs/InP and InyAl1-yAs/InP heterostructures Journal of Electronic Materials. 23: 423-429. DOI: 10.1007/BF02671224  1
1994 Aspnes DE. Optical diagnostics for epitaxial growth and processing Ieee Leos Annual Meeting - Proceedings. 2: 27-28.  1
1994 Aspnes DE. Real-time surface and near-surface optical diagnostics for epitaxial growth Materials Research Society Symposium Proceedings. 324: 3-14.  1
1994 Aspnes DE. Optical feedback control of epitaxial growth Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 292-295.  1
1993 Lee H, Klein MV, Aspnes DE, Kuo CP, Peanasky M, Craford MG. Optical study of (AlxGa1-x)0.5In 0.5P/GaAs semiconductor alloys by spectroscopic ellipsometry Journal of Applied Physics. 73: 400-406. DOI: 10.1063/1.354046  1
1993 Kamiya I, Tanaka H, Aspnes DE, Koza M, Bhat R. Structure of (001) GaAs surfaces during epitaxial growth by organometallic chemical vapor deposition Applied Physics Letters. 63: 3206-3208. DOI: 10.1063/1.110200  1
1993 Hingerl K, Aspnes DE, Kamiya I, Florez LT. Relationship among reflectance-difference spectroscopy, surface photoabsorption, and spectroellipsometry Applied Physics Letters. 63: 885-887. DOI: 10.1063/1.109890  1
1993 Aspnes DE. Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements Applied Physics Letters. 62: 343-345. DOI: 10.1063/1.108952  1
1993 Aspnes DE. New developments in spectroellipsometry: the challenge of surfaces Thin Solid Films. 233: 1-8. DOI: 10.1016/0040-6090(93)90050-Y  1
1992 Weber WH, Remillard JT, McBride JR, Aspnes DE. Optical dielectric response of PdO. Physical Review. B, Condensed Matter. 46: 15085-15091. PMID 10003622 DOI: 10.1103/PhysRevB.46.15085  1
1990 Aspnes DE, Chang YC, Studna AA, Florez LT, Farrell HH, Harbison JP. Direct optical measurement of surface dielectric responses: Interrupted growth on (001) GaAs. Physical Review Letters. 64: 192-195. PMID 10041673 DOI: 10.1103/PhysRevLett.64.192  0.8
1990 Chang YC, Aspnes DE. Theory of dielectric-function anisotropies of (001) GaAs (2 x 1) surfaces. Physical Review. B, Condensed Matter. 41: 12002-12012. PMID 9993651  0.8
1986 Aspnes DE, Ihm J. Biatomic steps on (001) silicon surfaces. Physical Review Letters. 57: 3054-3057. PMID 10033942 DOI: 10.1103/PhysRevLett.57.3054  1
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