| Year |
Citation |
Score |
| 2019 |
Strnad NA, Potrepka DM, Pulskamp JS, Liu Y, Jones JL, Phaneuf RJ, Polcawich RG. Texture and phase variation of ALD PbTiO3 films crystallized by rapid thermal anneal Journal of Vacuum Science and Technology. 37: 20917. DOI: 10.1116/1.5080226 |
0.308 |
|
| 2017 |
Cezza M, Qualters CS, Phaneuf RJ. Assembly of PCBM and tn-ZnPc Molecular Domains and Phase Separation of Molecular Mixtures from Liquid Solution on Si(111). Langmuir : the Acs Journal of Surfaces and Colloids. PMID 29110487 DOI: 10.1021/Acs.Langmuir.7B03233 |
0.702 |
|
| 2015 |
Tsai SJ, Ballarotto M, Kan HC, Phaneuf RJ. Effect of extended extinction from gold nanopillar arrays on the absorbance spectrum of a bulk heterojunction organic solar cell Energies. 8: 1547-1560. DOI: 10.3390/En8031547 |
0.579 |
|
| 2014 |
Lin CF, Kan HC, Kanakaraju S, Richardson C, Phaneuf R. Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth. Nanomaterials (Basel, Switzerland). 4: 344-354. PMID 28344227 DOI: 10.3390/Nano4020344 |
0.6 |
|
| 2014 |
Guo SH, Sushkov AB, Park DH, Drew HD, Kolb PW, Herman WN, Phaneuf RJ. Impact of interface roughness on the performance of broadband blackbody absorber based on dielectric-metal film multilayers. Optics Express. 22: 1952-62. PMID 24515204 DOI: 10.1364/Oe.22.001952 |
0.469 |
|
| 2014 |
Guo SH, Sushkov AB, Park DH, Drew HD, Kolb PW, Herman WN, Phaneuf RJ. Impact of interface roughness on the performance of broadband blackbody absorber based on dielectric-metal film multilayers Optics Express. 22: 1952-1962. DOI: 10.1364/OE.22.001952 |
0.347 |
|
| 2014 |
Marquardt AE, Breitung EM, Drayman-Weisser T, Gates G, Rubloff GW, Vicenzi E, Phaneuf RJ. Investigation of atomic layer deposited metal oxide layers for conservation of metal cultural heritage objects Microscopy and Microanalysis. 20: 2002-2003. DOI: 10.1017/S143192761401174X |
0.484 |
|
| 2013 |
Marquardt A, Breitung EM, Drayman-Weisser T, Gates G, Rubloff GW, Phaneuf RJ. Characterization of atomic layer deposited films as diffusion barriers for silver art objects Ecs Transactions. 58: 277-286. DOI: 10.1149/05810.0277ecst |
0.453 |
|
| 2013 |
Lin CF, Kan HC, Kanakaraju S, Richardson CJ, Phaneuf RJ. Evidence for a large, thermal-activated characteristic length scale in unstable homoepitaxial growth on GaAs(001) Journal of Crystal Growth. 381: 83-86. DOI: 10.1016/J.Jcrysgro.2013.06.032 |
0.608 |
|
| 2012 |
Corrigan TD, Park DH, Drew HD, Guo SH, Kolb PW, Herman WN, Phaneuf RJ. Broadband and mid-infrared absorber based on dielectric-thin metal film multilayers. Applied Optics. 51: 1109-14. PMID 22410990 DOI: 10.1364/Ao.51.001109 |
0.431 |
|
| 2012 |
Corrigan TD, Park DH, Drew HD, Guo SH, Kolb PW, Herman WN, Phaneuf RJ. Broadband and mid-infrared absorber based on dielectric-thin metal film multilayers Applied Optics. 51: 1109-1114. DOI: 10.1364/AO.51.001109 |
0.327 |
|
| 2012 |
Lin CF, Hammouda ABH, Kan HC, Bartelt NC, Phaneuf RJ. Directing self-assembly of nanostructures kinetically: Patterning and the Ehrlich-Schwoebel barrier Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.085421 |
0.532 |
|
| 2012 |
Lin TC, Bruce RL, Oehrlein GS, Phaneuf RJ, Kan HC. Direct and quantitative evidence for buckling instability as a mechanism for roughening of polymer during plasma etching Applied Physics Letters. 100. DOI: 10.1063/1.4718940 |
0.303 |
|
| 2011 |
Bruce RL, Weilnboeck F, Lin T, Phaneuf RJ, Oehrlein GS, Long BK, Willson CG, Alizadeh A. On the absence of post-plasma etch surface and line edge roughness in vinylpyridine resists Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3607604 |
0.301 |
|
| 2011 |
Oehrlein GS, Phaneuf RJ, Graves DB. Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29: 0108011-01080135. DOI: 10.1116/1.3532949 |
0.324 |
|
| 2010 |
Tsai SJ, Ballarotto M, Romero DB, Herman WN, Kan HC, Phaneuf RJ. Effect of gold nanopillar arrays on the absorption spectrum of a bulk heterojunction organic solar cell. Optics Express. 18: A528-35. PMID 21165085 DOI: 10.1364/Oe.18.00A528 |
0.589 |
|
| 2010 |
Bruce RL, Weilnboeck F, Lin T, Phaneuf RJ, Oehrlein GS, Long BK, Willson CG, Vegh JJ, Nest D, Graves DB. Relationship between nanoscale roughness and ion-damaged layer in argon plasma exposed polystyrene films Journal of Applied Physics. 107. DOI: 10.1063/1.3373587 |
0.339 |
|
| 2009 |
Guo SH, Britti DG, Heetderks JJ, Kan HC, Phaneuf RJ. Spacer layer effect in fluorescence enhancement from silver nanowires over a silver film; switching of optimum polarization. Nano Letters. 9: 2666-70. PMID 19505080 DOI: 10.1021/Nl901112H |
0.464 |
|
| 2009 |
Engelmann S, Bruce RL, Weilnboeck F, Sumiya M, Kwon T, Phaneuf R, Oehrlein GS, Andes C, Graves D, Nest D, Hudson EA. Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C4 F 8 - And CF4 -based discharges Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 27: 1165-1179. DOI: 10.1116/1.3137012 |
0.375 |
|
| 2009 |
Engelmann S, Bruce RL, Sumiya M, Kwon T, Phaneuf R, Oehrlein GS, Andes C, Graves D, Nest D, Hudson EA. Plasma-surface interactions of advanced photoresists with C4 F8 Ar discharges: Plasma parameter dependencies Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 92-106. DOI: 10.1116/1.3054342 |
0.356 |
|
| 2009 |
Pal AR, Bruce RL, Weilnboeck F, Engelmann S, Lin T, Kuo MS, Phaneuf R, Oehrlein GS. Real-time studies of surface roughness development and reticulation mechanism of advanced photoresist materials during plasma processing Journal of Applied Physics. 105. DOI: 10.1063/1.3055268 |
0.368 |
|
| 2008 |
Guo SH, Heetderks JJ, Kan HC, Phaneuf RJ. Enhanced fluorescence and near-field intensity for Ag nanowire/nanocolumn arrays: evidence for the role of surface plasmon standing waves. Optics Express. 16: 18417-25. PMID 18958120 DOI: 10.1364/Oe.16.018417 |
0.492 |
|
| 2008 |
Tsai DH, Hawa T, Kan HC, Phaneuf RJ, Zachariah MR. Electrostatic-directed deposition of nanoparticles on a field generating substrate Materials Research Society Symposium Proceedings. 1059: 67-72. DOI: 10.1557/Proc-1059-Kk12-03 |
0.302 |
|
| 2008 |
Kan HC, Kwon T, Phaneuf RJ. Effect of length scales in directing step bunch self-organization during annealing of patterned vicinal Si(111) surfaces: Comparison with a simple near-equilibrium model Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.205401 |
0.546 |
|
| 2008 |
Hamouda AB, Pimpinelli A, Phaneuf RJ. Anomalous scaling in epitaxial growth on vicinal surfaces: meandering and mounding instabilities in a linear growth equation with spatiotemporally correlated noise Surface Science. 602: 2819-2827. DOI: 10.1016/J.Susc.2008.07.031 |
0.356 |
|
| 2008 |
Guo SH, Tsai SJ, Kan HC, Tsai DH, Zachariah MR, Phaneuf RJ. The effect of an active substrate on nanoparticle-enhanced fluorescence Advanced Materials. 20: 1424-1428. DOI: 10.1002/Adma.200701126 |
0.623 |
|
| 2007 |
Engelmann S, Bruce RL, Kwon T, Phaneuf R, Oehrlein GS, Bae YC, Andes C, Graves D, Nest D, Hudson EA, Lazzeri P, Iacob E, Anderle M. Plasma-surface interactions of model polymers for advanced photoresists using C4 F8 Ar discharges and energetic ion beams Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1353-1364. DOI: 10.1116/1.2759935 |
0.333 |
|
| 2007 |
Kwon T, Kan HC, Oehrlein GS, Phaneuf RJ. Transient roughening behaviour and spontaneous pattern formation during plasma etching of nanoporous silica Nanotechnology. 18. DOI: 10.1088/0957-4484/18/5/055305 |
0.511 |
|
| 2007 |
Tsai DH, Hawa T, Kan HC, Phaneuf RJ, Zachariah MR. Spatial and size-resolved electrostatic-directed deposition of nanoparticles on a field-generating substrate: Theoretical and experimental analysis Nanotechnology. 18. DOI: 10.1088/0957-4484/18/36/365201 |
0.314 |
|
| 2007 |
V́gh JJ, Nest D, Graves DB, Bruce R, Engelmann S, Kwon T, Phaneuf RJ, Oehrlein GS, Long BK, Willson CG. Near-surface modification of polystyrene by Ar+: Molecular dynamics simulations and experimental validation Applied Physics Letters. 91. DOI: 10.1063/1.2821226 |
0.484 |
|
| 2006 |
Tadayyon-Eslami T, Kan HC, Calhoun LC, Phaneuf RJ. Temperature-driven change in the unstable growth mode on patterned GaAs(001). Physical Review Letters. 97: 126101. PMID 17025980 DOI: 10.1103/PhysRevLett.97.126101 |
0.726 |
|
| 2006 |
Tsai D, Guo S, Phaneuf RJ, Zachariah MR. Electrostatically Directed Assembly of Silver Nanoparticles for Application to Metal Enhanced Fluorescence Biosensing Mrs Proceedings. 951. DOI: 10.1557/Proc-0951-E12-02 |
0.442 |
|
| 2006 |
Kan HC, Ankam R, Shah S, Micholsky KM, Tadayyon-Eslami T, Calhoun L, Phaneuf RJ. Evolution of patterned GaAs(001) during homoepitaxial growth: Size versus spacing Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.195410 |
0.733 |
|
| 2006 |
Corrigan TD, Guo SH, Szmacinski H, Phaneuf RJ. Systematic study of the size and spacing dependence of Ag nanoparticle enhanced fluorescence using electron-beam lithography Applied Physics Letters. 88. DOI: 10.1063/1.2176862 |
0.471 |
|
| 2006 |
Kwon T, Phaneuf RJ, Kan HC. Length-scale dependence of the step bunch self-organization on patterned vicinal Si(111) surfaces Applied Physics Letters. 88. DOI: 10.1063/1.2175501 |
0.398 |
|
| 2005 |
Corrigan TD, Guo S, Phaneuf RJ, Szmacinski H. Enhanced fluorescence from periodic arrays of silver nanoparticles. Journal of Fluorescence. 15: 777-84. PMID 16341797 DOI: 10.1007/S10895-005-2987-3 |
0.447 |
|
| 2005 |
Szmacinski H, Pugh VJ, Moore WE, Corrigan TC, Guo SH, Phaneuf R. Enhanced fluorescence using silver nanoparticles patterned by e-Beam lithography Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5703: 25-34. DOI: 10.1117/12.592470 |
0.462 |
|
| 2004 |
Kan HC, Shah S, Tadyyon-Eslami T, Phaneuf RJ. Transient evolution of surface roughness on patterned GaAs(001) during homoepitaxial growth. Physical Review Letters. 92: 146101. PMID 15089557 DOI: 10.1103/Physrevlett.92.146101 |
0.436 |
|
| 2004 |
Ballestad A, Tiedje T, Schmid JH, Kan HC, Tadyyon-Eslami T, Phaneuf RJ. Comment on "transient evolution of surface roughness on patterned GaAs(001) during homoepitaxial growth" Physical Review Letters. 93: 159601-1-159602-1. DOI: 10.1103/PhysRevLett.93.159601 |
0.312 |
|
| 2003 |
Park JY, Phaneuf RJ. Conductance imaging of thermally desorbed silicon oxide Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1254-1257. DOI: 10.1116/1.1574050 |
0.313 |
|
| 2003 |
Shah S, Garrett TJ, Limpaphayom K, Tadayyon-Eslami T, Kan HC, Phaneuf RJ. Patterning-based investigation of the length-scale dependence of the surface evolution during multilayer epitaxial growth Applied Physics Letters. 83: 4330-4332. DOI: 10.1063/1.1630170 |
0.734 |
|
| 2003 |
Park JY, Phaneuf RJ. Investigation of the direct electromigration term for Al nanodots within the depletion zone of a pn junction Journal of Applied Physics. 94: 6883-6886. DOI: 10.1063/1.1619193 |
0.316 |
|
| 2003 |
Phaneuf RJ, Schmid AK. Low-energy electron microscopy: Imaging surface dynamics Physics Today. 56: 50-55. DOI: 10.1063/1.1570772 |
0.334 |
|
| 2002 |
Ballarotto VW, Siegrist K, Phaneuf RJ, Williams ED. Model for doping-induced contrast in photoelectron emission microscopy Journal of Applied Physics. 91: 469-475. DOI: 10.1063/1.1423399 |
0.332 |
|
| 2001 |
Park JY, Phaneuf RJ, Williams ED. Scanning tunneling spectroscopy of field-induced Au nanodots on ultrathin oxides on Si(100) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 523-526. DOI: 10.1116/1.1358883 |
0.337 |
|
| 2001 |
Kan HC, Phaneuf RJ. A quick estimation of the LEED pattern size formed by an electrostatic objective lens in LEEM Optik (Jena). 112: 511-514. DOI: 10.1078/0030-4026-00096 |
0.325 |
|
| 2001 |
Ballarotto VW, Siegrist K, Phaneuf RJ, Williams ED. PEEM imaging and modeling of dopant-concentration variation in Si devices Characterization and Metrology For Ulsi Technology. 550: 307-311. DOI: 10.1063/1.1354416 |
0.315 |
|
| 2000 |
Phaneuf RJ, Kan HC, Marsi M, Gregoratti L, Günther S, Kiskinova M. Imaging the variation in band bending across a silicon pn junction surface using spectromicroscopy Journal of Applied Physics. 88: 863-868. DOI: 10.1063/1.373748 |
0.341 |
|
| 2000 |
Ballarotto VW, Siegrist K, Phaneuf RJ, Williams ED, Mogren S. PEEM imaging of dopant contrast in Si(001) Surface Science. 461. DOI: 10.1016/S0039-6028(00)00619-1 |
0.306 |
|
| 1999 |
Lengel G, Phaneuf RJ, Williams ED, Sarma SD, Beard W, Johnson FG. Nonuniversality In Mound Formation During Semiconductor Growth Physical Review B. 60. DOI: 10.1103/Physrevb.60.R8469 |
0.347 |
|
| 1999 |
Gregoratti L, Günther S, Kovaĉ J, Marsi M, Phaneuf RJ, Kiskinova M. Ni/Si(111) system: Formation and evolution of two- and three-dimensional phases studied by spectromicroscopy Physical Review B - Condensed Matter and Materials Physics. 59: 2018-2024. DOI: 10.1103/Physrevb.59.2018 |
0.347 |
|
| 1999 |
Phaneuf RJ, Hong Y, Horch S, Bennett PA. Observations of reversible and irreversible structural transitions of cobalt on Si (1 1 1) with LEEM Micron. 30: 13-20. DOI: 10.1016/S0968-4328(98)00040-7 |
0.338 |
|
| 1999 |
Phaneuf RJ, Bennett PA, Marsi M, Günther S, Gregoratti L, Casalis L, Kiskinova M. Equilibration of ring-cluster surface phases and suicide islands for Co adsorbed on Si(111) Surface Science. 431: 232-241. DOI: 10.1016/S0039-6028(99)00359-3 |
0.331 |
|
| 1998 |
Phaneuf RJ, Bennett PA. Leem studies of phase separations and surface depletion of Co and Ni on Si(111) Surface Review and Letters. 5: 1179-1188. DOI: 10.1142/S0218625X98001511 |
0.343 |
|
| 1998 |
Hildner ML, Phaneuf RJ, Williams ED. Imaging the depletion zone in a Si lateral pn junction with scanning tunneling microscopy Applied Physics Letters. 72: 3314-3316. DOI: 10.1063/1.121635 |
0.331 |
|
| 1998 |
Giesen M, Phaneuf RJ, Williams ED, Einstein TL. Photoemission electron microscopy of Schottky contacts Surface Science. 396: 411-421. DOI: 10.1016/S0039-6028(97)00696-1 |
0.393 |
|
| 1997 |
Giesen M, Phaneuf RJ, Williams ED, Einstein TL, Ibach H. Characterization of p-n junctions and surface-states on silicon devices by photoemission electron microscopy Applied Physics A. 64: 423-430. DOI: 10.1007/S003390050500 |
0.319 |
|
| 1995 |
Bennett PA, Wurm K, Phaneuf RJ, Lee MY, Parikh SA. Surface phase transformations in the Ni/Si(111) system observed in real time using low-energy electron microscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1728-1732. DOI: 10.1116/1.579759 |
0.33 |
|
| 1994 |
Jung TM, Phaneuf RJ, Williams ED. Sublimation and phase transitions on singular and vicinal Si(111) surfaces Surface Science. 301: 129-135. DOI: 10.1016/0039-6028(94)91294-7 |
0.35 |
|
| 1993 |
Phaneuf RJ, Bartelt NC, Williams ED, Swiech W, Bauer E. Crossover from metastable to unstable facet growth on Si(111). Physical Review Letters. 71: 2284-2287. PMID 10054634 DOI: 10.1103/Physrevlett.71.2284 |
0.397 |
|
| 1993 |
Williams ED, Phaneuf RJ, Wei J, Bartelt NC, Einstein TL. Thermodynamics and statistical mechanics of the faceting of stepped Si(111) Surface Science. 294: 219-242. DOI: 10.1016/0167-2584(93)91093-4 |
0.353 |
|
| 1992 |
Phaneuf RJ, Bartelt NC, Williams ED, Świȩch W, Bauer E. LEEM investigations of the domain growth of the (7×7) reconstruction on Si(111) Surface Science. 268: 227-237. DOI: 10.1016/0039-6028(92)90965-9 |
0.317 |
|
| 1991 |
Williams ED, Phaneuf RJ, Bartelt NC, Świe¸ch W, Bauer E. The Role of Surface Stress in the Faceting of Stepped Si(111) Surfaces Mrs Proceedings. 238: 219. DOI: 10.1557/Proc-238-219 |
0.411 |
|
| 1991 |
Jung TM, Phaneuf RJ, Williams ED. Step structure and surface reconstruction on vicinal Ge(111) surfaces Surface Science. 254: 235-250. DOI: 10.1016/0039-6028(91)90656-D |
0.364 |
|
| 1989 |
Bartelt NC, Williams ED, Phaneuf RJ, Yang Y, Sarma SD. Orientational stability of silicon surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 1898-1905. DOI: 10.1116/1.576025 |
0.36 |
|
| 1988 |
Phaneuf RJ, Williams ED, Bartelt NC. Temperature dependence of vicinal Si(111) surfaces. Physical Review. B, Condensed Matter. 38: 1984-1993. PMID 9946485 DOI: 10.1103/Physrevb.38.1984 |
0.346 |
|
| 1988 |
Phaneuf RJ, Williams ED. Summary Abstract: Surface phase separation of vicinal Si(111) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 657. DOI: 10.1116/1.575146 |
0.328 |
|
| 1988 |
Phaneuf RJ, Williams ED. Metastable structures of Si(111) formed by laser-quenching Surface Science. 195: 330-340. DOI: 10.1016/0039-6028(88)90799-6 |
0.351 |
|
| 1987 |
Phaneuf RJ, Williams ED. Surface phase separation of vicinal Si(111). Physical Review Letters. 58: 2563-2566. PMID 10034784 DOI: 10.1103/Physrevlett.58.2563 |
0.329 |
|
| 1986 |
Webb MB, Phaneuf RJ, Packard WE. Summary Abstract: Low energy electron diffraction and physisorption studies of the ge(111) surface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 1522-1523. DOI: 10.1116/1.573560 |
0.6 |
|
| 1985 |
Phaneuf RJ, Webb MB. A LEED study of Ge(111); a high-temperature incommensurate structure Surface Science. 164: 167-195. DOI: 10.1016/0039-6028(85)90706-X |
0.626 |
|
| 1870 |
Wang X-, Phaneuf RJ, Williams ED. Comparison of LEED and STM measurements of vicinal Si(111) Journal of Microscopy. 152: 473-480. DOI: 10.1111/J.1365-2818.1988.Tb01410.X |
0.36 |
|
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