Yuriy V. Shusterman, Ph.D. - Publications

Affiliations: 
2001 Rensselaer Polytechnic Institute, Troy, NY, United States 

20 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2003 Shusterman YV, Yakovlev NL, Dovidenko K, Schowalter LJ. Growth and structure of epitaxial Al and Cu films on CaF2 Thin Solid Films. 443: 23-27. DOI: 10.1016/S0040-6090(03)00927-1  0.72
2002 Schujman SB, Vajtai R, Shusterman Y, Biswas S, Dewhirst B, Schowalter LJ, Wei BQ, Ajayan PM. AFM-based surface potential measurements on carbon nanotubes Materials Research Society Symposium - Proceedings. 706: 377-382.  0.72
2001 Shusterman YV, Yakovlev NL, Schowalter LJ. Ultra-thin epitaxial Al and Cu films on CaF2/Si(1 1 1) Applied Surface Science. 175: 27-32. DOI: 10.1016/S0169-4332(01)00033-2  0.72
2001 Shusterman YV, Yakovlev NL, Dovidenko K, Schowalter LJ. Epitaxial Al and Cu films grown on CaF2/Si(111) Materials Research Society Symposium - Proceedings. 648: P11381-P11386.  0.72
2001 Goindi HS, Shin CS, Frederick M, Shusterman Y, Kim H, Petrov I, Ramanath G. Electromigration in epitaxial copper lines Materials Research Society Symposium - Proceedings. 648: P11371-P11376.  0.72
2000 Schowalter LJ, Rojo JC, Slack GA, Shusterman Y, Wang R, Bhat I, Arunmozhi G. Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates Journal of Crystal Growth. 211: 78-81. DOI: 10.1016/S0022-0248(99)00778-2  0.72
2000 Schowalter LJ, Rojo JC, Yakolev N, Shusterman Y, Dovidenko K, Wang R, Bhat I, Slack GA. Preparation and characterization of single-crystal aluminum nitride substrates Materials Research Society Symposium - Proceedings. 595: W671-W676.  0.72
2000 Schowalter LJ, Rojo JC, Yakolev N, Shusterman Y, Dovidenko K, Wang R, Bhat I, Slack GA. Preparation and characterization of single-crystal aluminum nitride substrates Materials Research Society Symposium - Proceedings. 595: W671-W676.  0.72
1999 Kaveev AK, Kyutt RN, Moisseeva MM, Schowalter LJ, Shusterman YV, Sokolov NS, Suturin SM, Yakovlev NL. Molecular beam epitaxy and characterization of CdF2 layers on CaF2(1 1 1) Journal of Crystal Growth. 201: 1105-1108. DOI: 10.1016/S0022-0248(98)01536-X  0.72
1999 Schowalter LJ, Shusterman Y, Wang R, Bhat I, Aninmozhi G, Slack OA. Epitaxial growth of hi-nitride layers on aluminum nitride substrates Materials Research Society Symposium - Proceedings. 537: G3.76.  0.72
1999 Schowalter LJ, Shusterman Y, Wang R, Bhat I, Arunmozhi G, Slack GA. Epitaxial growth of III-Nitride layers on aluminum nitride substrates Mrs Internet Journal of Nitride Semiconductor Research. 4: 6d.  0.72
1998 Labella VP, Shusterman Y, Schowalter LJ, Ventrice CA. Measurements of epitaxially grown Pt/CaF2/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1692-1696. DOI: 10.1116/1.581286  0.72
1998 Yakovlev NL, Shusterman YV, Maksym PA. Hydrogen terminated Si(111) surface studied by RHEED Applied Surface Science. 130: 310-313. DOI: 10.1016/S0169-4332(98)00076-2  0.72
1998 Lee BC, Khilko AY, Shusterman YV, Yakovlev NL, Sokolov NS, Kyutt RN, Suturin SM, Schowalter LJ. Structural and electrical characterization of epitaxial CdF2 layers grown on Si(111) and CaF2(111) substrates Applied Surface Science. 123: 590-594.  0.72
1997 Kushibe M, Shusterman YV, Yakovlev NL, Schowalter LJ. Slow decay of reflection high energy electron diffraction oscillations in Ca1-xMgxF2 Materials Research Society Symposium - Proceedings. 441: 45-50.  0.72
1997 Khilko AY, Kyutt RN, Mosina GN, Sokolov NS, Shusterman YV, Schowalter LJ. Structural studies of epitaxial CdF2 layers on Si(111) Materials Research Society Symposium - Proceedings. 441: 457-462.  0.72
1996 Sokolov NS, Alvarez JC, Shusterman YV, Yakovlev NL, Overney RM, Itoh Y, Takahashi I, Harada J. Structural transformations at CaF2/Si(111) interfaces Applied Surface Science. 104: 402-408. DOI: 10.1016/S0169-4332(96)00178-X  0.72
1996 Sokolov NS, Alvarez JC, Gastev SV, Shusterman YV, Takahashi I, Itoh Y, Harada J, Overney RM. High quality CaF2 layers on Si(111) with type-A epitaxial relation at the interface Journal of Crystal Growth. 169: 40-50. DOI: 10.1016/0022-0248(96)00346-6  0.72
1996 Harada J, Takahashi I, Itoh Y, Sokolov NS, Yakovlev NL, Shusterman Y, Alvarez JC. X-ray scattering from surfaces and interfaces and its application to the characterization of CaF2/Si(111) interfaces Journal of Crystal Growth. 163: 31-38.  0.72
1995 Yakovlev NL, Shusterman YV. Growth by molecular beam epitaxy and structural study of lattice matched MgxCa1-xF2 films on silicon Journal of Crystal Growth. 150: 1119-1121.  0.72
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