Hyoungsub Kim, Ph.D. - Publications

2004 Stanford University, Palo Alto, CA 

47 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Kim DK, Hong SB, Jeong K, Lee C, Kim H, Cho MH. P-N Junction Diode using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices. Acs Nano. PMID 30753059 DOI: 10.1021/acsnano.8b07730  0.56
2017 Baik M, Kang HK, Kang YS, Jeong KS, An Y, Choi S, Kim H, Song JD, Cho MH. Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition. Scientific Reports. 7: 11337. PMID 28900097 DOI: 10.1038/s41598-017-09623-1  0.56
2017 Choi S, An Y, Lee C, Song J, Nguyen MC, Byun YC, Choi R, McIntyre PC, Kim H. Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics. Scientific Reports. 7: 9769. PMID 28852035 DOI: 10.1038/s41598-017-09888-6  0.8
2016 Kim D, Fu Y, Kim J, Lee KH, Kim H, Yang H, Chae H. Improved electroluminescence of quantum dot light-emitting diodes enabled by a partial ligand exchange with benzenethiol. Nanotechnology. 27: 245203. PMID 27159925 DOI: 10.1088/0957-4484/27/24/245203  0.8
2016 Yang J, Kwak H, Lee Y, Kang YS, Cho MH, Cho JH, Kim YH, Jeong SJ, Park S, Lee HJ, Kim H. MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity. Acs Applied Materials & Interfaces. PMID 26989951 DOI: 10.1021/acsami.5b11709  0.8
2016 Kang YS, Kang HK, Kim DK, Jeong KS, Baik M, An Y, Kim H, Song JD, Cho MH. Structural and electrical properties of sub-1-nm EOT HfO2 grown on InAs by atomic layer deposition and its thermal stability. Acs Applied Materials & Interfaces. PMID 26928131 DOI: 10.1021/acsami.5b10975  0.8
2016 Jeong SJ, Gu Y, Heo J, Yang J, Lee CS, Lee MH, Lee Y, Kim H, Park S, Hwang S. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors. Scientific Reports. 6: 20907. PMID 26861833 DOI: 10.1038/srep20907  0.8
2016 Raja J, Nguyen CPT, Lee C, Balaji N, Chatterjee S, Jang K, Kim H, Yi J. Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Layer: A Cost-Effective Method Ieee Electron Device Letters. 37: 1272-1275. DOI: 10.1109/LED.2016.2599559  0.8
2016 Shim J, Yoo G, Kang DH, Jung WS, Byun YC, Kim H, Kang WT, Yu WJ, Yu HY, Park Y, Park JH. Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions Ieee Electron Device Letters. 37: 4-7. DOI: 10.1109/LED.2015.2497714  0.8
2016 Choi S, Kim J, Choi J, Cho S, Lee M, Ko E, Rho IC, Kim CH, Kim Y, Ko DH, Kim H. Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer Microelectronic Engineering. 165: 1-5. DOI: 10.1016/j.mee.2016.08.003  0.8
2016 Mahata C, An Y, Choi S, Byun YC, Kim DK, Lee T, Kim J, Cho MH, Kim H. Electrical properties of the HfO2-Al2O3 nanolaminates with homogeneous and graded compositions on InP Current Applied Physics. 16: 294-299. DOI: 10.1016/j.cap.2015.11.022  0.8
2015 Na HG, Kwon YJ, Cho HY, Kang SY, Jung TK, Lee HS, Kim HW. Improved Sensing Behaviors in Reduced Graphene Oxide Functionalized with Ni(OH)2 Nanoparticles. Journal of Nanoscience and Nanotechnology. 15: 9002-8. PMID 26726632  0.4
2015 Na HG, Kwon YJ, Cho HY, Kang SY, Kim HW. Improvement of Gas Sensing Characteristics by Adding Pt Nanoparticles on ZnO-Branched SnO2 Nanowires. Journal of Nanoscience and Nanotechnology. 15: 8571-6. PMID 26726554  0.4
2015 Kwon YH, Do HW, Kim H, Cho HK. Composition Control of CuInSe2 Thin Films Using Cu/In Stacked Structure in Coulometric Controlled Electrodeposition Process. Journal of Nanoscience and Nanotechnology. 15: 7836-40. PMID 26726424  0.68
2015 Jeon JH, Nakajima K, Kim HT, Rhee YJ, Pathak VB, Cho MH, Shin JH, Yoo BJ, Hojbota C, Jo SH, Shin KW, Sung JH, Lee SK, Cho BI, Choi IW, et al. A broadband gamma-ray spectrometry using novel unfolding algorithms for characterization of laser wakefield-generated betatron radiation. The Review of Scientific Instruments. 86: 123116. PMID 26724015 DOI: 10.1063/1.4939014  0.56
2015 Yang J, Gu Y, Lee E, Lee H, Park SH, Cho MH, Kim YH, Kim YH, Kim H. Wafer-scale synthesis of thickness-controllable MoS2 films via solution-processing using a dimethylformamide/n-butylamine/2-aminoethanol solvent system. Nanoscale. 7: 9311-9. PMID 25946575 DOI: 10.1039/c5nr01486g  0.56
2015 Byun YC, Choi S, An Y, McIntyre PC, Kim H. Correction to tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition. Acs Applied Materials & Interfaces. 7: 7445. PMID 25823007 DOI: 10.1021/acsami.5b02372  0.8
2015 Lee JW, Bae JH, Kim TH, Kim H, Min SH, Shin K, Lee JH, Song Ji, Yang CW. Kinetics of the Ni/Ta-Interlayer/Ge reactions studied by in situ transmission electron microscopy Science of Advanced Materials. 7: 1497-1501. DOI: 10.1166/sam.2015.2363  0.8
2015 Kwon YH, Do HW, Kim H, Cho HK. Composition control of CuInSe2 thin films using Cu/In stacked structure in coulometric controlled electrodeposition process Journal of Nanoscience and Nanotechnology. 15: 7836-7840. DOI: 10.1166/jnn.2015.11201  0.8
2015 An Y, Mahata C, Lee C, Choi S, Byun YC, Kang YS, Lee T, Kim J, Cho MH, Kim H. Electrical and band structural analyses of Ti1-xAlxOyfilms grown by atomic layer deposition on p-type GaAs Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/41/415302  0.8
2015 Ahn CH, Cho HK, Kim H. Carrier confinement effect-driven channel design and achievement of robust electrical/photostability and high mobility in oxide thin-film transistors Journal of Materials Chemistry C. 4: 727-735. DOI: 10.1039/c5tc03766b  0.44
2015 Lucero AT, Byun YC, Qin X, Cheng L, Kim H, Wallace RM, Kim J. In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As Electronic Materials Letters. 11: 769-774. DOI: 10.1007/s13391-015-5150-6  0.8
2014 Choi J, Choi S, Kang YS, Na S, Lee HJ, Cho MH, Kim H. Defect-free erbium silicide formation using an ultrathin Ni interlayer. Acs Applied Materials & Interfaces. 6: 14712-7. PMID 25093916 DOI: 10.1021/am503626g  0.56
2014 Byun YC, Choi S, An Y, McIntyre PC, Kim H. Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition. Acs Applied Materials & Interfaces. 6: 10482-8. PMID 24911531 DOI: 10.1021/am502048d  0.8
2014 Kang YS, Kim DK, Kang HK, Jeong KS, Cho MH, Ko DH, Kim H, Seo JH, Kim DC. Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics. Acs Applied Materials & Interfaces. 6: 3896-906. PMID 24467437 DOI: 10.1021/am4049496  0.8
2014 Lee SM, Hwang SM, Hwang SY, Kim TW, Lee SH, Park GC, Choi JY, Yoon JJ, Kim TJ, Kim YD, Kim H, Lim JH, Joo J. Influences of rapid thermal process on solution-deposited Ti-silicate/Si films: Phase segregation, composition and interface changes, and dielectric properties Materials Chemistry and Physics. 145: 168-175. DOI: 10.1016/j.matchemphys.2014.01.055  0.8
2013 Yang J, Kim S, Choi W, Park SH, Jung Y, Cho MH, Kim H. Improved growth behavior of atomic-layer-deposited high-k dielectrics on multilayer MoS2 by oxygen plasma pretreatment. Acs Applied Materials & Interfaces. 5: 4739-44. PMID 23683268 DOI: 10.1021/am303261c  0.56
2013 Kang YS, Kim DK, Jeong KS, Cho MH, Kim CY, Chung KB, Kim H, Kim DC. Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs. Acs Applied Materials & Interfaces. 5: 1982-9. PMID 23438318 DOI: 10.1021/am302803f  0.56
2013 Park SH, Kang YS, Chae J, Kim HJ, Cho MH, Ko DH, Byun YC, Kim H, Cho SW, Kim CY, Seo JH. Control of the interfacial reaction in HfO2 on Si-passivated GaAs Applied Surface Science. 283: 375-381. DOI: 10.1016/j.apsusc.2013.06.118  0.8
2013 Kang YS, Kim DK, Cho MH, Seo JH, Shon HK, Lee TG, Cho YD, Kim SW, Ko DH, Kim H. Change in crystalline structure and band alignment in atomic-layer- deposited HfO2 on InP using an annealing treatment Physica Status Solidi (a) Applications and Materials Science. 210: 1612-1617. DOI: 10.1002/pssa.201228628  0.8
2012 Kim S, Konar A, Hwang WS, Lee JH, Lee J, Yang J, Jung C, Kim H, Yoo JB, Choi JY, Jin YW, Lee SY, Jena D, Choi W, Kim K. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nature Communications. 3: 1011. PMID 22910357 DOI: 10.1038/ncomms2018  0.8
2012 Hwang SM, Lee SM, Choi JH, Park K, Joo J, Lim JH, Kim H. Microstructure and dielectric characteristics of high-k tetragonal ZrO 2 films with various thicknesses processed by sol-gel method Journal of Nanoscience and Nanotechnology. 12: 3350-3354. DOI: 10.1166/jnn.2012.5630  0.8
2012 Kim TW, Jang TY, Kim D, Kim JW, Jeong JK, Choi R, Lee MS, Kim H. Effect of la incorporation on reliability characteristics of metal-oxide-semiconductor capacitors with hafnium based high-k dielectrics Microelectronic Engineering. 89: 31-33. DOI: 10.1016/j.mee.2011.01.036  0.8
2010 Ahn CH, Kim H, Cho HK. Deposition of Al doped ZnO layers with various electrical types by atomic layer deposition Thin Solid Films. 519: 747-750. DOI: 10.1016/j.tsf.2010.08.151  0.8
2009 Lim JH, Shim JH, Choi JH, Joo J, Park K, Jeon H, Moon MR, Jung D, Kim H, Lee HJ. Solution-processed InGaZnO-based thin film transistors for printed electronics applications Applied Physics Letters. 95. DOI: 10.1063/1.3157265  0.8
2006 Chui CO, Kim H, Chi D, Mcintyre PC, Saraswat KC. Nanoscale germanium MOS dielectrics - Part II: High-κ gate dielectrics Ieee Transactions On Electron Devices. 53: 1509-1516. DOI: 10.1109/TED.2006.875812  0.6
2006 Seo KI, Lee DI, Pianetta P, Kim H, Saraswat KC, McIntyre PC. Chemical states and electrical properties of a high- k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer Applied Physics Letters. 89. DOI: 10.1063/1.2358834  0.6
2005 Chen R, Kim H, McIntyre PC, Porter DW, Bent SF. Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1922076  0.8
2005 Sayan S, Nguyen NV, Ehrstein J, Emge T, Garfunkel E, Croft M, Zhao X, Vanderbilt D, Levin I, Gusev EP, Kim H, McIntyre PJ. Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1864235  0.8
2005 Chen R, Kim H, McIntyre PC, Bent SF. Investigation of self-assembled monolayer resists for hafnium dioxide atomic layer deposition Chemistry of Materials. 17: 536-544. DOI: 10.1021/cm0486666  0.8
2004 Kim H, McIntyre PC, Chui CO, Saraswat KC, Cho MH. Interfacial characteristics of HfO 2 grown on nitrided Ge (100) substrates by atomic-layer deposition Applied Physics Letters. 85: 2902-2904. DOI: 10.1063/1.1797564  0.8
2004 Kim H, McIntyre PC, Chui CO, Saraswat KC, Stemmer S. Engineering chemically abrupt high-k metal oxide/silicon interfaces using an oxygen-gettering metal overlayer Journal of Applied Physics. 96: 3467-3472. DOI: 10.1063/1.1776636  0.8
2004 Chen R, Kim H, McIntyre PC, Bent SF. Self-assembled monolayer resist for atomic layer deposition of HfO 2 and ZrO 2 high-κ gate dielectrics Applied Physics Letters. 84: 4017-4019. DOI: 10.1063/1.1751211  0.8
2003 Chui CO, Kim H, McVittie JP, Triplett BB, McIntyre PC, Saraswat KC. A novel self-aligned gate-last MOSFET process comparing high-κ candidates 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 464-465. DOI: 10.1109/ISDRS.2003.1272191  0.8
2003 Kim H, Chui CO, Saraswat KC, McIntyre PC. Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy Applied Physics Letters. 83: 2647-2649. DOI: 10.1063/1.1613031  0.8
2003 Wang D, Wang Q, Javey A, Tu R, Dai H, Kim H, McIntyre PC, Krishnamohan T, Saraswat KC. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics Applied Physics Letters. 83: 2432-2434. DOI: 10.1063/1.1611644  0.8
2002 Javey A, Kim H, Brink M, Wang Q, Ural A, Guo J, McIntyre P, McEuen P, Lundstrom M, Dai H. High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates. Nature Materials. 1: 241-6. PMID 12618786 DOI: 10.1038/nmat769  0.8
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