Year |
Citation |
Score |
2023 |
Rezk A, Ansari MHR, Ranjeesh KC, Gaber S, Kumar D, Merhi A, Kaafarani BR, Hassine MB, El-Atab N, Shetty D, Nayfeh A. Nano-scale charge trapping memory based on two-dimensional conjugated microporous polymer. Scientific Reports. 13: 18845. PMID 37914717 DOI: 10.1038/s41598-023-44232-1 |
0.326 |
|
2022 |
Rezk A, Alhammadi A, Alnaqbi W, Nayfeh A. Utilizing trapped charge at bilayer 2D MoS/SiOinterface for memory applications. Nanotechnology. 33. PMID 35344937 DOI: 10.1088/1361-6528/ac61cd |
0.314 |
|
2020 |
Abbas Y, Rezk A, Saadat I, Nayfeh A, Rezeq M. Time dependence of electrical characteristics during the charge decay from a single gold nanoparticle on silicon. Rsc Advances. 10: 41741-41746. PMID 35516571 DOI: 10.1039/d0ra08135c |
0.3 |
|
2020 |
Rezk A, Abbas Y, Saadat I, Nayfeh A, Rezeq M. Charging and discharging characteristics of a single gold nanoparticle embedded in Al2O3 thin films Applied Physics Letters. 116: 223501. DOI: 10.1063/5.0004000 |
0.448 |
|
2019 |
Abbas Y, Rezk A, Anwer S, Saadat I, Nayfeh A, Rezeq M. Improved figures of merit of nano Schottky diode by embedding and characterizing individual gold nanoparticles on n-Si substrate. Nanotechnology. PMID 31796652 DOI: 10.1088/1361-6528/Ab5E3E |
0.479 |
|
2019 |
Abbas Y, Rezk A, Saadat I, Nayfeh A, Rezeq M. Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces. Scientific Reports. 9: 13586. PMID 31537835 DOI: 10.1038/S41598-019-49908-1 |
0.517 |
|
2019 |
Dushaq G, Nayfeh A, Rasras M. Hexagonal germanium formation at room temperature using controlled penetration depth nano-indentation. Scientific Reports. 9: 1593. PMID 30733519 DOI: 10.1038/S41598-018-38440-3 |
0.407 |
|
2019 |
Alkis S, Chowdhury FI, Alevli M, Dietz N, Yalızay B, Aktürk S, Nayfeh A, Okyay AK. Corrigendum: Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles (2015 J. Opt. 17 105903) Journal of Optics. 21: 049501. DOI: 10.1088/2040-8986/Ab0Ac0 |
0.597 |
|
2019 |
Enders B, Kocyigit A, Bahceci E, Elhalawany N, Nayfeh A, Alshammari O, Alsalhi M, Nayfeh M. Wet non-thermal integration of nano binary silicon-gold system with strong plasmonic and luminescent characteristics Aip Advances. 9: 095039. DOI: 10.1063/1.5121153 |
0.415 |
|
2019 |
Dushaq G, Nayfeh A, Rasras M. Complementary metal oxide semiconductor (CMOS) compatible gallium arsenide metal-semiconductor-metal photodetectors (GaAs MSMPDs) on silicon using ultra-thin germanium buffer layer for visible photonic applications Journal of Applied Physics. 126: 193106. DOI: 10.1063/1.5120705 |
0.516 |
|
2018 |
Alnuaimi A, Almansouri I, Saadat I, Nayfeh A. Interface engineering of graphene-silicon Schottky junction solar cells with an AlO interfacial layer grown by atomic layer deposition. Rsc Advances. 8: 10593-10597. PMID 35540487 DOI: 10.1039/c7ra13443f |
0.438 |
|
2018 |
Abdul Hadi S, Fitzgerald EA, Griffiths S, Nayfeh A. III-V/Si dual junction solar cell at scale: Manufacturing cost estimates for step-cell based technology Journal of Renewable and Sustainable Energy. 10: 015905. DOI: 10.1063/1.5004620 |
0.482 |
|
2018 |
Alnuaimi A, Almansouri I, Saadat I, Nayfeh A. Interface engineering of graphene–silicon Schottky junction solar cells with an Al2O3 interfacial layer grown by atomic layer deposition Rsc Advances. 8: 10593-10597. DOI: 10.1039/C7Ra13443F |
0.45 |
|
2018 |
Alnuaimi A, Almansouri I, Saadat I, Nayfeh A. High performance graphene-silicon Schottky junction solar cells with HfO2 interfacial layer grown by atomic layer deposition Solar Energy. 164: 174-179. DOI: 10.1016/J.Solener.2018.02.020 |
0.513 |
|
2017 |
Dushaq G, Nayfeh A, Rasras M. Metal-germanium-metal photodetector grown on silicon using low temperature RF-PECVD. Optics Express. 25: 32110-32119. PMID 29245875 DOI: 10.1364/Oe.25.032110 |
0.477 |
|
2017 |
El Atab N, Ulusoy Ghobadi G, Ghobadi A, Suh J, Islam R, Okyay AK, Saraswat KC, Nayfeh A. Cubic-phase zirconia nano-islands growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices. Nanotechnology. PMID 28832335 DOI: 10.1088/1361-6528/Aa87E5 |
0.726 |
|
2017 |
Dushaq G, Nayfeh A, Rasras M. Germanium metal-semiconductor-metal photodetectors grown on Silicon using low temperature RF-PECVD Frontiers in Optics. DOI: 10.1364/Fio.2017.Jw4A.42 |
0.334 |
|
2017 |
El-Atab N, Saadat I, Saraswat K, Nayfeh A. Nanoislands-Based Charge Trapping Memory: A Scalability Study Ieee Transactions On Nanotechnology. 16: 1143-1146. DOI: 10.1109/Tnano.2017.2764745 |
0.598 |
|
2017 |
Dushaq G, Rasras M, Nayfeh A. Germanium MOS capacitors grown on Silicon using low temperature RF-PECVD Journal of Physics D: Applied Physics. 50: 405107. DOI: 10.1088/1361-6463/Aa81Be |
0.526 |
|
2017 |
Abdul Hadi S, Dushaq G, Nayfeh A. Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices Journal of Applied Physics. 122: 245103. DOI: 10.1063/1.4990871 |
0.495 |
|
2017 |
Dushaq G, Rasras M, Nayfeh A. Low temperature deposition of germanium on silicon using Radio Frequency Plasma Enhanced Chemical Vapor Deposition Thin Solid Films. 636: 585-592. DOI: 10.1016/J.Tsf.2017.07.009 |
0.453 |
|
2017 |
Dushaq G, Nayfeh A, Rasras M. Tuning the optical properties of RF-PECVD grown μc-Si:H thin films using different hydrogen flow rate Superlattices and Microstructures. 107: 172-177. DOI: 10.1016/J.Spmi.2017.03.052 |
0.363 |
|
2017 |
Chowdhury FI, Alnuaimi A, E-Atab N, Nayfeh M, Nayfeh A. Corrigendum to “Enhanced performance of thin-film amorphous silicon solar cells with a top film of 2.85 nm silicon nanoparticles” [Solar Energy 125 (2016) 332–338] Solar Energy. 153: 784. DOI: 10.1016/J.Solener.2017.07.023 |
0.392 |
|
2017 |
Islam K, Chowdhury FI, Okyay AK, Nayfeh A. Corrigendum to “Comparative study of thin film n-i-p a-Si:H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles” [Solar Energy 120 (2015) 257–262] Solar Energy. 153: 783. DOI: 10.1016/J.Solener.2017.07.022 |
0.447 |
|
2017 |
Islam K, Alnuaimi A, Battal E, Kemal Okyay A, Nayfeh A. Corrigendum to “Effect of gold nanoparticles size on light scattering for thin film amorphous-silicon solar cells” [Solar Energy 103 (2014) 263–268] Solar Energy. 153: 782. DOI: 10.1016/J.Solener.2017.07.021 |
0.375 |
|
2016 |
El-Atab N, Chowdhury F, Ulusoy TG, Ghobadi A, Nazirzadeh A, Okyay AK, Nayfeh A. ~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step. Scientific Reports. 6: 38712. PMID 27991492 DOI: 10.1038/Srep38712 |
0.688 |
|
2016 |
El-Atab N, Nayfeh A. 1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices. Nanotechnology. 27: 275205. PMID 27232717 DOI: 10.1088/0957-4484/27/27/275205 |
0.409 |
|
2016 |
Dushaq G, Nayfeh A, Rasras M. Tailoring the optical properties of boron doped μc-Si: H thin films by changing the SiH4/H2 ratio using RF-PECVD process Frontiers in Optics. DOI: 10.1364/Fio.2016.Ftu3F.2 |
0.372 |
|
2016 |
El-Atab N, Nayfeh A, Turgut BB, Okyay AK. MOS memory with double-layer high-κ tunnel oxide Al2O3/HfO2 and ZnO charge trapping layer Ieee-Nano 2015 - 15th International Conference On Nanotechnology. 766-768. DOI: 10.1109/NANO.2015.7388722 |
0.62 |
|
2016 |
El-Atab N, Nayfeh A, Turgut BB, Okyay AK. MOS memory with ultrathin Al2O3-TiO2 nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer Ieee-Nano 2015 - 15th International Conference On Nanotechnology. 663-665. DOI: 10.1109/NANO.2015.7388692 |
0.692 |
|
2016 |
Chowdhury FI, Alnuaimi A, Alkis S, Ortaç B, Aktürk S, Alevli M, Dietz N, Okyay AK, Nayfeh A. Corrigendum: Enhancement in c-Si solar cells using 16 nm InN nanoparticles (2016Mater. Res. Express3056202) Materials Research Express. 3: 079502. DOI: 10.1088/2053-1591/3/7/079502 |
0.62 |
|
2016 |
Chowdhury FI, Alnuaimi A, Alkis S, Ortaç B, Aktürk S, Alevli M, Dietz N, Okyay AK, Nayfeh A. Enhancement in c-Si solar cells using 16 nm InN nanoparticles Materials Research Express. 3: 056202. DOI: 10.1088/2053-1591/3/5/056202 |
0.354 |
|
2016 |
El-Atab N, Nayfeh A. Corrigendum: 1D versus 3D quantum confinement in 1–5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices (2016 Nanotechnology 27 275205) Nanotechnology. 27: 419501. DOI: 10.1088/0957-4484/27/41/419501 |
0.387 |
|
2016 |
Alnuaimi A, Almansouri I, Nayfeh A. Performance of planar heterojunction perovskite solar cells under light concentration Aip Advances. 6: 115012. DOI: 10.1063/1.4967429 |
0.361 |
|
2016 |
Abdul Hadi S, Fitzgerald EA, Nayfeh A. Theoretical efficiency limit for a two-terminal multi-junction "step-cell" using detailed balance method Journal of Applied Physics. 119. DOI: 10.1063/1.4942223 |
0.331 |
|
2016 |
Chowdhury FI, Alnuaimi A, El-Atab N, Nayfeh M, Nayfeh A. Enhanced performance of thin-film amorphous silicon solar cells with a top film of 2.85nm silicon nanoparticles Solar Energy. 125: 332-338. DOI: 10.1016/J.Solener.2015.12.030 |
0.475 |
|
2016 |
Alnuaimi A, Almansouri I, Nayfeh A. Effect of mobility and band structure of hole transport layer in planar heterojunction perovskite solar cells using 2D TCAD simulation Journal of Computational Electronics. 15: 1110-1118. DOI: 10.1007/S10825-016-0850-1 |
0.38 |
|
2016 |
El-Atab N, Rizk A, Tekcan B, Alkis S, Okyay AK, Nayfeh A. Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si-Al2O3-SiO2structure [Phys. Status Solidi A212, 1751-1755 (2015)] Physica Status Solidi (a). 213: 2264-2264. DOI: 10.1002/Pssa.201600455 |
0.674 |
|
2015 |
El-Atab N, Turgut BB, Okyay AK, Nayfeh M, Nayfeh A. Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O 3/HfO 2 tunnel oxide. Nanoscale Research Letters. 10: 957. PMID 26055483 DOI: 10.1186/S11671-015-0957-5 |
0.669 |
|
2015 |
El-Atab N, Turgut BB, Okyay AK, Nayfeh A. Charge trapping memory with 2.85-nm Si-nanoparticles embedded in HfO2 Ecs Transactions. 66: 17-21. DOI: 10.1149/06640.0017ecst |
0.674 |
|
2015 |
Chowdhury FI, Islam K, Alkis S, Ortaç B, Alevli M, Dietz N, Okyay AK, Nayfeh A. Enhanced light scattering with energy downshifting using 16 nm indium nitride nanoparticles for improved thin-film a-Si N-i-P solar cells Ecs Transactions. 66: 9-16. DOI: 10.1149/06640.0009ecst |
0.611 |
|
2015 |
El-Atab N, Turgut BB, Okyay AK, Nayfeh A. Graphene nanoplatelets embedded in HfO2 for MOS memory Ecs Transactions. 66: 39-43. DOI: 10.1149/06614.0039ecst |
0.566 |
|
2015 |
Chowdhury FI, Alnuaimi A, Alkis S, Okyay AK, Nayfeh M, Nayfeh A. ∼23% increase in efficiency of 100 nm thin film a-si solar cells using combination of Si/InN and Au nanoparticles 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356306 |
0.656 |
|
2015 |
Alnuaimi A, Tekcan B, Okyay AK, Nayfeh A. Low temperature ALD grown ZnO as emitter and TCO for a thin-film a-Si PIN solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355931 |
0.679 |
|
2015 |
Milakovich T, Shah R, Hadi S, Bulsara M, Nayfeh A, Fitzgerald E. Growth and characterization of GaAsP top cells for high efficiency III-V/Si tandem PV 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355598 |
0.396 |
|
2015 |
Abdul Hadi S, Milakovich T, Bulsara MT, Saylan S, Dahlem MS, Fitzgerald EA, Nayfeh A. Design optimization of single-layer antireflective coating for GaAs1-xPx/Si Tandem Cells with x=0, 0.17, 0.29, and 0.37 Ieee Journal of Photovoltaics. 5: 425-431. DOI: 10.1109/Jphotov.2014.2363559 |
0.422 |
|
2015 |
Alkis S, Chowdhury FI, Alevli M, Dietz N, Yalizay B, Aktürk S, Nayfeh A, Okyay AK. Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles Journal of Optics (United Kingdom). 17. DOI: 10.1088/2040-8978/17/10/105903 |
0.62 |
|
2015 |
Polyzoeva E, Abdul Hadi S, Nayfeh A, Hoyt JL. Reducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell design Aip Advances. 5. DOI: 10.1063/1.4921945 |
0.487 |
|
2015 |
Saylan S, Milakovich T, Hadi SA, Nayfeh A, Fitzgerald EA, Dahlem MS. Multilayer antireflection coating design for GaAs0.69P0.31/Si dual-junction solar cells Solar Energy. 122: 76-86. DOI: 10.1016/J.Solener.2015.07.049 |
0.465 |
|
2015 |
Islam K, Chowdhury FI, Okyay AK, Nayfeh A. Comparative study of thin film n-i-p a-Si: H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles Solar Energy. 120: 257-262. DOI: 10.1016/J.Solener.2015.07.018 |
0.688 |
|
2015 |
Kumar V, Nayfeh A. TCAD simulation and modeling of impact ionization (II) enhanced thin film c-Si solar cells Journal of Computational Electronics. DOI: 10.1007/S10825-015-0726-9 |
0.45 |
|
2015 |
El-Atab N, Rizk A, Tekcan B, Alkis S, Okyay AK, Nayfeh A. Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si-Al2O3-SiO2 structure Physica Status Solidi (a) Applications and Materials Science. 212: 1751-1755. DOI: 10.1002/Pssa.201431802 |
0.729 |
|
2014 |
Islam K, Chowdhury F, Alnuaimi A, Nayfeh A. ∼10% increase in short-circuit current density using 100nm plasmonic Au nanoparticles on thin film n-i-p a-Si:H solar cells 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 3071-3075. DOI: 10.1109/PVSC.2014.6925585 |
0.359 |
|
2014 |
Chowdhury FI, Alnuaimi A, Islam K, Nayfeh A. Efficiency enhancement in thin-film c-Si HIT solar cells using luminescent 2.85 nm silicon nanoparticles 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 2209-2213. DOI: 10.1109/PVSC.2014.6925364 |
0.394 |
|
2014 |
Alnuaimi A, Kumar V, Chowdhury F, Nayfeh A. Effect of carbon diffusion on performance of thin film c-Si HIT solar cells with a-SiC passivation layer 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 1197-1200. DOI: 10.1109/PVSC.2014.6925129 |
0.316 |
|
2014 |
Hadi SA, Polyzoeva E, Milakovich T, Bulsara M, Hoyt JL, Fitzgerald EA, Nayfeh A. Novel GaAs0.71P0.29/Si tandem step-cell design 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 1127-1131. DOI: 10.1109/PVSC.2014.6925114 |
0.355 |
|
2014 |
Kumar V, Nayfeh A. Design of Impact Ionization enhanced thin film c-Si HIT solar cells 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 1059-1063. DOI: 10.1109/PVSC.2014.6925096 |
0.336 |
|
2014 |
Al Wahshi N, Nayfeh A. Single junction GaAs - Ge stacked tandem cell 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 295-298. DOI: 10.1109/PVSC.2014.6924917 |
0.358 |
|
2014 |
El-Atab N, Ozcan A, Alkis S, Okyay AK, Nayfeh A. 2-nm laser-synthesized Si nanoparticles for low-power charge trapping memory devices 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 505-509. DOI: 10.1109/NANO.2014.6968168 |
0.689 |
|
2014 |
El-Atab N, Cimen F, Alkis S, Okyay AK, Nayfeh A. Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer Applied Physics Letters. 105. DOI: 10.1063/1.4891050 |
0.643 |
|
2014 |
El-Atab N, Cimen F, Alkis S, Ortaç B, Alevli M, Dietz N, Okyay AK, Nayfeh A. Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer Applied Physics Letters. 104: 253106. DOI: 10.1063/1.4885397 |
0.668 |
|
2014 |
El-Atab N, Ozcan A, Alkis S, Okyay AK, Nayfeh A. Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via Poole-Frenkel hole emission Applied Physics Letters. 104. DOI: 10.1063/1.4861590 |
0.683 |
|
2014 |
Islam K, Alnuaimi A, Battal E, Okyay AK, Nayfeh A. Effect of gold nanoparticles size on light scattering for thin film amorphous-silicon solar cells Solar Energy. 103: 263-268. DOI: 10.1016/J.Solener.2014.02.023 |
0.685 |
|
2014 |
Abdul Hadi S, Hashemi P, DiLello N, Polyzoeva E, Nayfeh A, Hoyt JL. Thin-film Si1-xGex HIT solar cells Solar Energy. 103: 154-159. DOI: 10.1016/J.Solener.2014.01.039 |
0.547 |
|
2014 |
El-Atab N, Ozcan A, Alkis S, Okyay AK, Nayfeh A. Silicon nanoparticle charge trapping memory cell Physica Status Solidi - Rapid Research Letters. 8: 629-633. DOI: 10.1002/Pssr.201409157 |
0.715 |
|
2013 |
Islam K, Alnuaimi A, Okyay AK, Nayfeh A. Improved efficiency of thin film a-Si:H solar cells with Au nanoparticles Conference Record of the Ieee Photovoltaic Specialists Conference. 1873-1876. DOI: 10.1109/PVSC.2013.6744508 |
0.612 |
|
2013 |
Whahsi NA, Nayfeh A. Effect of the interface states on the key design parameters in c-Si HIT solar cells Proceedings - Uksim-Amss 7th European Modelling Symposium On Computer Modelling and Simulation, Ems 2013. 408-413. DOI: 10.1109/EMS.2013.69 |
0.386 |
|
2013 |
Kumar V, Nayfeh A. Thin film c-Si solar cell enhanced with impact ionization Proceedings - Uksim-Amss 7th European Modelling Symposium On Computer Modelling and Simulation, Ems 2013. 681-684. DOI: 10.1109/EMS.2013.114 |
0.379 |
|
2013 |
Islam K, Alnuaimi A, Ally H, Nayfeh A. ITO, Si3N4 and ZnO:Al - Simulation of different anti-reflection coatings (ARC) for thin film a-Si:H solar cells Proceedings - Uksim-Amss 7th European Modelling Symposium On Computer Modelling and Simulation, Ems 2013. 673-676. DOI: 10.1109/EMS.2013.112 |
0.347 |
|
2013 |
Alkis S, Tekcan B, Nayfeh A, Okyay AK. UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes Journal of Optics (United Kingdom). 15. DOI: 10.1088/2040-8978/15/10/105002 |
0.68 |
|
2013 |
El-Atab N, Rizk A, Okyay AK, Nayfeh A. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer Aip Advances. 3. DOI: 10.1063/1.4832237 |
0.657 |
|
2013 |
El-Atab N, Alqatari S, Oruc FB, Souier T, Chiesa M, Okyay AK, Nayfeh A. Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon Aip Advances. 3. DOI: 10.1063/1.4826583 |
0.686 |
|
2013 |
Abdul Hadi S, Hashemi P, Dilello N, Polyzoeva E, Nayfeh A, Hoyt JL. Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells Aip Advances. 3. DOI: 10.1063/1.4805078 |
0.516 |
|
2013 |
Alnuaimi A, Nayfeh A, Koldyaev V. Electric-field and temperature dependence of the activation energy associated with gate induced drain leakage Journal of Applied Physics. 113. DOI: 10.1063/1.4789382 |
0.36 |
|
2013 |
Alnuaimi A, Islam K, Nayfeh A. Reduction of interface traps at the amorphous-silicon/crystalline-silicon interface by hydrogen and nitrogen annealing Solar Energy. 98: 236-240. DOI: 10.1016/J.Solener.2013.10.003 |
0.525 |
|
2012 |
Onaran E, Onbasli MC, Yesilyurt A, Yu HY, Nayfeh AM, Okyay AK. Silicon-Germanium multi-quantum well photodetectors in the near infrared. Optics Express. 20: 7608-15. PMID 22453440 DOI: 10.1364/OE.20.007608 |
0.633 |
|
2012 |
Hadi SA, Hashemi P, DiLello N, Nayfeh A, Hoyt JL. Effect of c-Si1-xGex Thickness Grown by LPCVD on the Performance of Thin-Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells Mrs Proceedings. 1447. DOI: 10.1557/Opl.2012.1163 |
0.521 |
|
2012 |
Alnuaimi A, Nayfeh A. Effect of interface states (Dit) at the a-Si/c-Si interface on the performance of thin film a-Si/c-Si/c-Si heterojunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 996-999. DOI: 10.1109/PVSC.2012.6317770 |
0.404 |
|
2012 |
Hadi SA, Hashemi P, Dilello N, Nayfeh A, Hoyt JL. Thin film a-Si/c-Si1-xGex/c-Si heterojunction solar cells with Ge content up to 56% Conference Record of the Ieee Photovoltaic Specialists Conference. 5-8. DOI: 10.1109/PVSC.2012.6317556 |
0.442 |
|
2012 |
Rizk A, Nayfeh A. Si nanowire memory Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322066 |
0.402 |
|
2012 |
Rizk A, Oruc FB, Okyay AK, Nayfeh A. ZnO based charge trapping memory with embedded nanoparticles Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322033 |
0.612 |
|
2012 |
Oruc FB, Cimen F, Rizk A, Ghaffari M, Nayfeh A, Okyay AK. Thin-film ZnO charge-trapping memory cell grown in a single ALD step Ieee Electron Device Letters. 33: 1714-1716. DOI: 10.1109/Led.2012.2219493 |
0.655 |
|
2012 |
Islam K, Nayfeh A. Simulation of a-Si/c-GaAs/c-Si heterojunction solar cells Proceedings - Uksim-Amss 6th European Modelling Symposium, Ems 2012. 466-470. DOI: 10.1109/EMS.2012.15 |
0.391 |
|
2011 |
Hadi SA, Hashemi P, Nayfeh A, Hoyt JL. Thin-film a-Si/c-Si 1-xGe x/c-Si heterojunction solar cells: Design and material quality requirements Ecs Transactions. 41: 3-14. DOI: 10.1149/1.3628603 |
0.41 |
|
2011 |
Hadi SA, Nayfeh A, Hashemi P, Hoyt J. A-Si/c-Si 1-xGe x/c-Si heterojunction solar cells International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 191-194. DOI: 10.1109/SISPAD.2011.6035083 |
0.389 |
|
2010 |
Onbasli MC, Yesilyurt A, Yu HY, Nayfeh AM, Okyay AK. Silicon-germanium multi-quantum wells for extended functionality and lower cost integration 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 530-531. DOI: 10.1109/PHOTONICS.2010.5698995 |
0.624 |
|
2009 |
Nayfeh AM, Koldyaev VI. Experimental evidence of long-range point defect-phosphorous pair diffusion in silicon Materials Research Society Symposium Proceedings. 1155: 85-90. DOI: 10.1557/Proc-1155-C05-06 |
0.374 |
|
2009 |
Okyay AK, Onbasli MC, Ercan B, Yu HY, Ren S, Miller DAB, Saraswat KC, Nayfeh AM. High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 303-304. DOI: 10.1109/LEOS.2009.5343246 |
0.626 |
|
2007 |
Okyay AK, Nayfeh AM, Saraswat KC, Ozguven N, Marshall A, McIntyre PC, Yonehara T. Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 460-461. DOI: 10.1109/LEOS.2006.279214 |
0.628 |
|
2006 |
Okyay AK, Nayfeh AM, Saraswat KC, Yonehara T, Marshall A, McIntyre PC. High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si. Optics Letters. 31: 2565-7. PMID 16902620 DOI: 10.1364/Ol.31.002565 |
0.707 |
|
2006 |
Saraswat KC, Chui CO, Kapur P, Krishnamohan T, Nayfeh A, Okyay AK, Shenoy RS. Performance limitations of Si CMOS and alternatives for nanoelectronics International Journal of High Speed Electronics and Systems. 16: 175-192. DOI: 10.1142/S0129156406003606 |
0.765 |
|
2006 |
Okyay AK, Nayfeh AM, Saraswat KC, Marshall A, McIntyre PC, Yonehara T. Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628294 |
0.619 |
|
2006 |
Saraswat K, Chui CO, Krishnamohan T, Kim D, Nayfeh A, Pethe A. High performance germanium MOSFETs Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 135: 242-249. DOI: 10.1016/J.Mseb.2006.08.014 |
0.795 |
|
2005 |
Nayfeh A, Chui CO, Yonehara T, Saraswat KC. Fabrication of high-quality p-MOSFET in Ge Grown heteroepitaxially on Si Ieee Electron Device Letters. 26: 311-313. DOI: 10.1109/Led.2005.846578 |
0.756 |
|
2005 |
Nayfeh A, Chui CO, Yonehara T, Saraswat KC. High mobility Ge pMOS fabricated using a novel heteroepitaxial Ge on Si growth method Device Research Conference - Conference Digest, Drc. 2005: 89-90. DOI: 10.1109/DRC.2005.1553069 |
0.687 |
|
2005 |
Saraswat KC, Chui CO, Krishnamohan T, Nayfeh A, McIntyre P. Ge based high performance nanoscale MOSFETs Microelectronic Engineering. 80: 15-21. DOI: 10.1016/J.Mee.2005.04.038 |
0.805 |
|
2004 |
Nayfeh A, Chui CO, Saraswat KC, Yonehara T. Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality Proceedings - Electrochemical Society. 7: 1189-1192. DOI: 10.1063/1.1802381 |
0.729 |
|
2004 |
Nayfeh A, Chui CO, Saraswat KC, Yonehara T. Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality Proceedings - Electrochemical Society. 7: 1189-1192. |
0.372 |
|
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