Raghunath Murali, Ph.D. - Publications

Affiliations: 
2004 Georgia Institute of Technology, Atlanta, GA 
Area:
Microelectronics/Microsystems

22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Wiesner T, Lee W, Obenauf AC, Ran L, Murali R, Zhang QF, Wong EW, Hu W, Scott SN, Shah RH, Landa I, Button J, Lailler N, Sboner A, Gao D, et al. Alternative transcription initiation leads to expression of a novel ALK isoform in cancer. Nature. PMID 26444240 DOI: 10.1038/Nature15258  0.96
2015 Schoolmeester JK, Dao LN, Sukov WR, Wang L, Park KJ, Murali R, Hameed MR, Soslow RA. TFE3 translocation-associated perivascular epithelioid cell neoplasm (PEComa) of the gynecologic tract: morphology, immunophenotype, differential diagnosis. The American Journal of Surgical Pathology. 39: 394-404. PMID 25517951 DOI: 10.1097/PAS.0000000000000349  0.96
2013 Byju C, Murali R, Vishnu S, Joji J. Reconfigurable ultrasonic beamformer 2013 Ieee Recent Advances in Intelligent Computational Systems, Raics 2013. 176-180. DOI: 10.1109/RAICS.2013.6745469  1
2013 Zheng P, Bryan SE, Yang Y, Murali R, Naeemi A, Meindl JD. Hydrogenation of graphene nanoribbon edges: Improvement in carrier transport Ieee Electron Device Letters. 34: 707-709. DOI: 10.1109/Led.2013.2253593  0.32
2012 Bryan SE, Brenner K, Yang Y, Murali R, Meindl JD. P-type electrical transport of chemically doped epitaxial graphene nanoribbons Ieee Electron Device Letters. 33: 866-868. DOI: 10.1109/Led.2012.2189432  1
2012 Yang Y, Brenner K, Murali R. The influence of atmosphere on electrical transport in graphene Carbon. 50: 1727-1733. DOI: 10.1016/J.Carbon.2011.12.008  0.32
2012 Brenner K, Yang Y, Murali R. Edge doping of graphene sheets Carbon. 50: 637-645. DOI: 10.1016/J.Carbon.2011.09.021  0.32
2011 Yang Y, Brenner K, Murali R. System-level analysis of graphene klein tunneling device Proceedings of the Ieee Conference On Nanotechnology. 1575-1579. DOI: 10.1109/NANO.2011.6144488  0.32
2011 Brenner K, Murali R. In situ doping of graphene by exfoliation in a nitrogen ambient Applied Physics Letters. 98. DOI: 10.1063/1.3562018  0.32
2010 Meindl J, Naeemi A, Bakir M, Murali R. Nanoelectronics in retrospect, prospect and principle Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 53: 31-35. DOI: 10.1109/ISSCC.2010.5434062  1
2010 Brenner K, Murali R. Single step, complementary doping of graphene Applied Physics Letters. 96. DOI: 10.1063/1.3308482  1
2009 Tabor C, Murali R, Mahmoud M, El-Sayed MA. On the use of plasmonic nanoparticle pairs as a plasmon ruler: the dependence of the near-field dipole plasmon coupling on nanoparticle size and shape. The Journal of Physical Chemistry. A. 113: 1946-53. PMID 19090688 DOI: 10.1021/Jp807904S  1
2009 Murali R, Brenner K, Yang Y, Beck T, Meindl JD. Resistivity of graphene nanoribbon interconnects Ieee Electron Device Letters. 30: 611-613. DOI: 10.1109/Led.2009.2020182  1
2009 Murali R, Yang Y, Brenner K, Beck T, Meindl JD. Breakdown current density of graphene nanoribbons Applied Physics Letters. 94. DOI: 10.1063/1.3147183  1
2008 Sassine S, Krupko Y, Portal JC, Kvon ZD, Murali R, Martin KP, Hill G, Wieck AD. Experimental investigation of the ratchet effect in a two-dimensional electron system with broken spatial inversion symmetry Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/PhysRevB.78.045431  1
2008 Sassine S, Krupko Y, Kvon ZD, Portal JC, Murali R, Martin KP, Hill G, Wieck AD. Polarized-microwave control of directed transport in a 2D electron gas with artificial asymmetrical scatterers Physica E: Low-Dimensional Systems and Nanostructures. 40: 2043-2045. DOI: 10.1016/j.physe.2007.09.092  1
2007 Murali R, Brown D, Martin KP, Meindl JD. Improving electron beam resist sensitivity by preexposure to deep ultraviolet radiation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 2064-2067. DOI: 10.1116/1.2794070  1
2007 De Heer WA, Berger C, Conrad E, First P, Murali R, Meindl J. Pionics: The emerging science and technology of graphene-based nanoelectronics Technical Digest - International Electron Devices Meeting, Iedm. 199-202. DOI: 10.1109/IEDM.2007.4418901  1
2007 Murali R, Meindl JD. Modeling the effect of source/drain junction depth on bulk-MOSFET scaling Solid-State Electronics. 51: 823-827. DOI: 10.1016/J.Sse.2007.03.012  1
2006 Murali R, Brown DK, Martin KP, Meindl JD. Process optimization and proximity effect correction for gray scale e-beam lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2936-2939. DOI: 10.1116/1.2357962  1
2004 Murali R, Austin BL, Wang L, Meindl JD. Short-channel modeling of bulk accumulation MOSFETs Ieee Transactions On Electron Devices. 51: 940-947. DOI: 10.1109/Ted.2004.828276  1
2002 Murali R, Austin BL, Wang L, Meindl JD. Scaled accumulation FETS for ultra-low power logic Proceedings of the Annual Ieee International Asic Conference and Exhibit. 2002: 371-375. DOI: 10.1109/ASIC.2002.1158087  1
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