Year |
Citation |
Score |
2016 |
Mooney PM, Tarun M, Beaton DA, Mascarenhas A, Alberi K. Deep level defects in dilute GaAsBi alloys grown under intense UV illumination Semiconductor Science and Technology. 31: 085014. DOI: 10.1088/0268-1242/31/8/085014 |
0.501 |
|
2016 |
Mooney PM, Tarun MC, Bahrami-Yekta V, Tiedje T, Lewis RB, Masnadi-Shirazi M. Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/6/065007 |
0.427 |
|
2015 |
McCluskey MD, Corolewski CD, Lv J, Tarun MC, Teklemichael ST, Walter ED, Grant Norton M, Harrison KW, Ha S. Acceptors in ZnO Journal of Applied Physics. 117. DOI: 10.1063/1.4913827 |
0.75 |
|
2015 |
Selim FA, Winarski D, Varney CR, Tarun MC, Ji J, McCluskey MD. Generation and characterization of point defects in SrTiO3 and Y3Al5O12 Results in Physics. 5: 28-31. DOI: 10.1016/J.Rinp.2015.01.002 |
0.625 |
|
2014 |
McCluskey MD, Corolewski CD, Poole VM, Tarun MC. Persistent photoconductivity in bulk strontium titanate Materials Research Society Symposium Proceedings. 1675: 87-91. DOI: 10.1557/Opl.2014.800 |
0.676 |
|
2014 |
Philipps JM, Stehr JE, Buyanova I, Tarun MC, McCluskey MD, Meyer BK, Hofmann DM. Recharging behavior of nitrogen-centers in ZnO Journal of Applied Physics. 116. DOI: 10.1063/1.4892632 |
0.626 |
|
2013 |
Tarun MC, Selim FA, McCluskey MD. Persistent photoconductivity in strontium titanate. Physical Review Letters. 111: 187403. PMID 24237562 DOI: 10.1103/Physrevlett.111.187403 |
0.639 |
|
2013 |
McCluskey MD, Tarun MC, Teklemichael ST. Acceptor dopants in bulk and nanoscale ZnO Materials Research Society Symposium Proceedings. 1494: 3-12. DOI: 10.1557/Opl.2012.1574 |
0.752 |
|
2013 |
Tuomisto F, Rauch C, Wagner MR, Hoffmann A, Eisermann S, Meyer BK, Kilanski L, Tarun MC, McCluskey MD. Nitrogen and vacancy clusters in ZnO Journal of Materials Research. 28: 1977-1983. DOI: 10.1557/Jmr.2013.195 |
0.623 |
|
2013 |
Selim FA, Varney CR, Tarun MC, Rowe MC, Collins GS, McCluskey MD. Positron lifetime measurements of hydrogen passivation of cation vacancies in yttrium aluminum oxide garnets Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.174102 |
0.635 |
|
2012 |
McCluskey MD, Tarun MC, Teklemichael ST. Hydrogen in oxide semiconductors Journal of Materials Research. 27: 2190-2198. DOI: 10.1557/Jmr.2012.137 |
0.734 |
|
2012 |
Che H, Huso J, Morrison JL, Thapa D, Huso M, Yeh WJ, Tarun MC, McCluskey MD, Bergman L. Optical properties of ZnO-alloyed nanocrystalline films Journal of Nanomaterials. 2012. DOI: 10.1155/2012/963485 |
0.612 |
|
2012 |
Selim FA, Tarun MC, Wall DE, Boatner LA, McCluskey MD. Erratum: “Cu-Doping of ZnO by nuclear transmutation” [Appl. Phys. Lett. 99, 202109 (2011)] Applied Physics Letters. 101: 029901. DOI: 10.1063/1.4736950 |
0.615 |
|
2011 |
Tarun MC, Zafar Iqbal M, McCluskey MD, Huso J, Bergman L. Experimental evidence for nitrogen as a deep acceptor in ZnO Materials Research Society Symposium Proceedings. 1394: 21-26. DOI: 10.1557/Opl.2011.1532 |
0.722 |
|
2011 |
Selim FA, Tarun MC, Wall DE, Boatner LA, McCluskey MD. Cu-doping of ZnO by nuclear transmutation Applied Physics Letters. 99. DOI: 10.1063/1.3662014 |
0.634 |
|
2011 |
Tarun MC, Iqbal MZ, McCluskey MD. Nitrogen is a deep acceptor in ZnO Aip Advances. 1. DOI: 10.1063/1.3582819 |
0.723 |
|
2011 |
Tarun MC, McCluskey MD. Infrared absorption of hydrogen-related defects in strontium titanate Journal of Applied Physics. 109. DOI: 10.1063/1.3561867 |
0.632 |
|
2010 |
Zbib MB, Tarun MC, Norton MG, Bahr DF, Nair R, Randall NX, Osborne EW. Mechanical properties of polycrystalline silicon solar cell feed stock grown via fluidized bed reactors Journal of Materials Science. 45: 1560-1566. DOI: 10.1007/S10853-009-4124-1 |
0.369 |
|
2009 |
McCluskey MD, Jokela SJ, Tarun MC. Hydrogen -related defects in bulk ZnO Materials Research Society Symposium Proceedings. 1167: 83-87. DOI: 10.1557/Proc-1167-O07-07 |
0.788 |
|
2009 |
Jokela SJ, Tarun MC, McCluskey MD. Nitrogen and hydrogen in bulk single-crystal ZnO Physica B: Condensed Matter. 404: 4810-4812. DOI: 10.1016/J.Physb.2009.08.238 |
0.77 |
|
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