Year |
Citation |
Score |
2011 |
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S. Noise, gain, and responsivity in low-strain quantum dot infrared photodetectors with up to 80 dot-in-a-well periods Ieee Journal of Quantum Electronics. 47: 607-613. DOI: 10.1109/JQE.2011.2107732 |
0.633 |
|
2011 |
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY, Hayat MM. Versatile spectral imaging with an algorithm-based spectrometer using highly tuneable quantum dot infrared photodetectors Ieee Journal of Quantum Electronics. 47: 190-197. DOI: 10.1109/Jqe.2010.2065216 |
0.698 |
|
2010 |
Tan CH, PVines, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY, Hayat MM. Spectrally tunable quantum dot infrared detectors: Implementation of an algorithm-based spectrometer 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 706-707. DOI: 10.1109/Photonics.2010.5699084 |
0.676 |
|
2010 |
Prasankumar RP, Chow WW, Urayama J, Attaluri RS, Shenoi RV, Krishna S, Taylor AJ. Density-dependent carrier dynamics in a quantum dots-in-a-well heterostructure Applied Physics Letters. 96. DOI: 10.1063/1.3294309 |
0.709 |
|
2008 |
Prasankumar RP, Attaluri RS, Averitt RD, Urayama J, Weisse-Bernstein N, Rotella P, Stintz AD, Krishna S, Taylor AJ. Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure. Optics Express. 16: 1165-73. PMID 18542190 DOI: 10.1364/Oe.16.001165 |
0.637 |
|
2008 |
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S. Multiple stack quantum dot infrared photodetectors Proceedings of Spie - the International Society For Optical Engineering. 7113. DOI: 10.1117/12.802247 |
0.685 |
|
2008 |
Shenoi RV, Attaluri RS, Siroya A, Shao J, Sharma YD, Stintz A, Vandervelde TE, Krishna S. Low-strain InAsInGaAsGaAs quantum dots-in-a-well infrared photodetector Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1136-1139. DOI: 10.1116/1.2835063 |
0.615 |
|
2007 |
Attaluri RS, Shao J, Posani KT, Lee SJ, Brown JS, Stintz A, Krishna S. Resonant cavity enhanced InAs∕In[sub 0.15]Ga[sub 0.85]As dots-in-a-well quantum dot infrared photodetector Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 1186. DOI: 10.1116/1.2746054 |
0.721 |
|
2007 |
Matthews MR, Steed RJ, Frogley MD, Phillips CC, Attaluri RS, Krishna S. Transient photoconductivity measurements of carrier lifetimes in an InAs/In0.15Ga0.85As dots-in-a-well detector Applied Physics Letters. 90. DOI: 10.1063/1.2712810 |
0.561 |
|
2006 |
Attaluri RS, Annamalai S, Posani KT, Stintz A, Krishna S. Influence of Si doping on the performance of quantum dots-in-well photodetectors Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1553. DOI: 10.1116/1.2190676 |
0.602 |
|
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