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Nutan Gautam, Ph.D. - Publications

Affiliations: 
2012 Electrical Engineering University of New Mexico, Albuquerque, NM, United States 
Area:
Infrared imaging
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51 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Das S, Das U, Gautam N, Krishna S. Type-II InAs/GaSb photodiode array pixel isolation by femto-second laser anneal Infrared Physics and Technology. 78: 162-166. DOI: 10.1016/J.Infrared.2016.07.023  0.597
2015 Das S, Das U, Gautam N, Krishna S. Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing Proceedings of Spie - the International Society For Optical Engineering. 9516. DOI: 10.1117/12.2178995  0.583
2015 Gopal V, Gautam N, Plis E, Krishna S. Modelling of current-voltage characteristics of infrared photo-detectors based on type - II InAs/GaSb super-lattice diodes with unipolar blocking layers Aip Advances. 5. DOI: 10.1063/1.4930978  0.622
2014 Klein B, Gautam N, Plis E, Schuler-Sandy T, Rotter TJ, Krishna S, Connelly BC, Metcalfe GD, Shen P, Wraback M. Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4862085  0.736
2013 Tian ZB, DeCuir EA, Gautam N, Krishna S, Wijewarnasuriya PS, Pattison JW, Dhar N, Welser RE, Sood AK. Hetero-engineering infrared detectors with type-II superlattices Proceedings of Spie - the International Society For Optical Engineering. 8868. DOI: 10.1117/12.2032205  0.684
2013 Tian Z, Eric AD, Priyalal SW, James WP, Gautam N, Krishna S, Dhar N, Roger EW, Ashok KS. Low dark current structures for long-wavelength Type-II strained layer superlattice photodiodes Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2015489  0.705
2013 Plis E, Klein B, Myers S, Gautam N, Rotter TJ, Dawson RL, Krishna S, Lee SJ, Kim YH. Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4798650  0.798
2013 Plis E, Klein B, Myers S, Gautam N, Smith EP, Krishna S. High operating temperature midwave infrared InAs/GaSb superlattice photodetectors on (111) GaSb substrates Ieee Electron Device Letters. 34: 426-428. DOI: 10.1109/Led.2012.2236534  0.808
2013 Gautam N, Myers S, Barve AV, Klein B, Smith EP, Rhiger DR, Kim HS, Tian ZB, Krishna S. Barrier engineered infrared photodetectors based on type-ii inas/gasb strained layer superlattices Ieee Journal of Quantum Electronics. 49: 211-217. DOI: 10.1109/Jqe.2012.2236643  0.852
2013 Gautam N, Myers S, Barve AV, Klein B, Smith EP, Rhiger D, Plis E, Kutty MN, Henry N, Schuler-Sandy T, Krishna S. Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices Infrared Physics and Technology. 59: 72-77. DOI: 10.1016/J.Infrared.2012.12.017  0.847
2013 Plis E, Naydenkov M, Myers S, Klein B, Gautam N, Krishna SS, Smith EP, Johnson S, Krishna S. Dual-band pBp detectors based on InAs/GaSb strained layer superlattices Infrared Physics and Technology. 59: 28-31. DOI: 10.1016/J.Infrared.2012.12.005  0.785
2013 Asplund C, Marcks Von Würtemberg R, Lantz D, Malm H, Martijn H, Plis E, Gautam N, Krishna S. Performance of mid-wave T2SL detectors with heterojunction barriers Infrared Physics and Technology. 59: 22-27. DOI: 10.1016/J.Infrared.2012.12.004  0.685
2013 Klein B, Montoya J, Gautam N, Krishna S. Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal Applied Physics a: Materials Science and Processing. 111: 671-674. DOI: 10.1007/S00339-012-7293-8  0.703
2013 Gautam N, Barve AV, Krishna S. Polarization dependent photocurrent spectroscopy for identification of quantum confined interband transitions in type-II InAs/GaSb superlattices Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 736-739. DOI: 10.1002/Pssc.201200654  0.747
2013 Plis E, Klein B, Myers S, Gautam N, Krishna S. (111) InAs/GaSb type-II strained layer superlattice material for high operating temperature detection Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 748-751. DOI: 10.1002/Pssc.201200605  0.808
2012 DeCuir EA, Gautam N, Meissner GP, Wijewarnasuriya PS, Krishna S, Dhar NK, Bramhall TG, Welser RE, Sood AK. Design and development of low dark current SLS detectors for IRFPA applications Proceedings of Spie - the International Society For Optical Engineering. 8512. DOI: 10.1117/12.974237  0.689
2012 Umana-Membreno GA, Kala H, Klein B, Antoszewski J, Gautam N, Kutty MN, Plis E, Krishna S, Faraone L. Electronic transport in InAs/GaSb type-II superlattices for long wavelength infrared focal plane array applications Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919767  0.738
2012 Myers S, Klein B, Plis E, Gautam N, Morath C, Cowan V, Krishna S. Photoconductive gain in barrier heterostructure infrared detectors Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919648  0.777
2012 Klein B, Gautam N, Myers S, Krishna S. Temperature-dependent absorption derivative on InAs/GaSb Type II superlattices Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919616  0.742
2012 DeCuir EA, Meissner GP, Wijewarnasuriya PS, Gautam N, Krishna S, Dhar NK, Welser RE, Sood AK. Long-wave type-II superlattice detectors with unipolar electron and hole barriers Optical Engineering. 51. DOI: 10.1117/1.Oe.51.12.124001  0.658
2012 Umana-Membreno GA, Klein B, Kala H, Antoszewski J, Gautam N, Kutty MN, Plis E, Krishna S, Faraone L. Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices Applied Physics Letters. 101. DOI: 10.1063/1.4772954  0.725
2012 Gautam N, Barve A, Krishna S. Identification of quantum confined interband transitions in type-II InAs/GaSb superlattices using polarization sensitive photocurrent spectroscopy Applied Physics Letters. 101. DOI: 10.1063/1.4767358  0.741
2012 Schuler-Sandy T, Myers S, Klein B, Gautam N, Ahirwar P, Tian ZB, Rotter T, Balakrishnan G, Plis E, Krishna S. Gallium free type II InAs/InAs xSb 1-x superlattice photodetectors Applied Physics Letters. 101. DOI: 10.1063/1.4745926  0.784
2012 Gautam N, Myers S, Barve AV, Klein B, Smith EP, Rhiger DR, Dawson LR, Krishna S. High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice Applied Physics Letters. 101. DOI: 10.1063/1.4733660  0.853
2012 Sengupta S, Kim JO, Barve AV, Adhikary S, Sharma YD, Gautam N, Lee SJ, Noh SK, Chakrabarti S, Krishna S. Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure Applied Physics Letters. 100. DOI: 10.1063/1.4711214  0.728
2011 Myers S, Plis E, Morath C, Cowan V, Gautam N, Klein B, Kutty MN, Naydenkov M, Schuler-Sandy T, Krishna S. Comparison of superlattice based dual color nBn and pBp infrared detectors Proceedings of Spie - the International Society For Optical Engineering. 8155. DOI: 10.1117/12.894986  0.771
2011 Plis EA, Gautam N, Kutty MN, Myers S, Klein B, Schuler-Sandy T, Naydenkov M, Krishna S. Performance of long-wave infrared InAs/GaSb strained layer superlattice detectors for the space applications Proceedings of Spie - the International Society For Optical Engineering. 8164. DOI: 10.1117/12.893706  0.794
2011 Plis E, Klein B, Gautam N, Myers S, Kutty MN, Naydenkov M, Krishna S. Performance optimization of long-wave infrared detectors based on InAs/GaSb strained layer superlattices Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.885856  0.77
2011 Cowan VM, Morath CP, Myers S, Gautam N, Krishna S. Low Temperature Noise Measurement of an InAs/GaSb-based nBn MWIR Detector Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.884808  0.626
2011 Plis E, Gautam N, Myers S, Krishna SS, Smith EP, Johnson S, Krishna S. High performance dual-band InAs/GaSb SLS detectors with nBn and pBp architectures Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.882399  0.613
2011 Cowan VM, Morath CP, Swift SM, Myers S, Gautam N, Krishna S. Gamma-ray irradiation effects on InAs/GaSb-based nBn IR detector Proceedings of Spie - the International Society For Optical Engineering. 7945. DOI: 10.1117/12.873413  0.602
2011 Gautam N, Barve AV, Myers S, Klein B, Plis E, Naydenkov M, Kutty MN, Schuler-Sandy T, Krishna S. Polarization selective interband transitions in type-II InAs/GaSb superlattices Ieee Photonic Society 24th Annual Meeting, Pho 2011. 33-34. DOI: 10.1109/Pho.2011.6110411  0.783
2011 Plis EA, Krishna SS, Gautam N, Myers S, Krishna S. Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture Ieee Photonics Journal. 3: 234-240. DOI: 10.1109/Jphot.2011.2125949  0.667
2011 Klein B, Plis E, Kutty MN, Gautam N, Albrecht A, Myers S, Krishna S. Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors Journal of Physics D: Applied Physics. 44: 075102. DOI: 10.1088/0022-3727/44/7/075102  0.729
2011 Gautam N, Naydenkov M, Myers S, Barve AV, Plis E, Rotter T, Dawson LR, Krishna S. Three color infrared detector using InAs/GaSb superlattices with unipolar barriers Applied Physics Letters. 98: 121106. DOI: 10.1063/1.3570687  0.785
2011 Gautam N, Kim H, Myers S, Plis E, Kutty M, Naydenkov M, Klein B, Dawson L, Krishna S. Heterojunction bandgap engineered photodetector based on type-II InAs/GaSb superlattice for single color and bicolor infrared detection Infrared Physics & Technology. 54: 273-277. DOI: 10.1016/J.Infrared.2010.12.028  0.815
2011 Plis E, Kutty M, Myers S, Kim H, Gautam N, Dawson L, Krishna S. Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors Infrared Physics & Technology. 54: 252-257. DOI: 10.1016/J.Infrared.2010.12.024  0.749
2010 Myers SA, Khoshakhlagh A, Mailfert J, Wanninkhof P, Plis E, Kutty MN, Kim HS, Gautam N, Klein B, Smith EPG, Krishna S. Performance of InAsSb-based infrared detectors with nBn design Proceedings of Spie. 7808: 780805. DOI: 10.1117/12.862295  0.793
2010 Khoshakhlagh A, Myers S, Plis E, Kutty MN, Klein B, Gautam N, Kim H, Smith EPG, Rhiger D, Johnson SM, Krishna S. Mid-wavelength InAsSb detectors based on nBn design Proceedings of Spie. 7660. DOI: 10.1117/12.850428  0.81
2010 Kim HS, Plis E, Gautam N, Khoshakhlagh A, Myers S, Kutty MN, Sharma Y, Dawson LR, Krishna S. SU-8 passivation of type-II InAs/GaSb strained layer superlattice detectors Proceedings of Spie. 7660. DOI: 10.1117/12.850284  0.826
2010 Gautam N, Plis E, Kim HS, Kutty MN, Myers S, Khoshakhlagh A, Dawson LR, Krishna S. Heterostructure band engineering of type-II InAs/GaSb superlattice based longwave infrared photodiodes using unipolar current blocking barriers Proceedings of Spie. 7660. DOI: 10.1117/12.849889  0.817
2010 Plis E, Khoshakhlagh A, Myers S, Kim HS, Gautam N, Sharma YD, Krishna S, Lee SJ, Noh SK. Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: C3G13-C3G18. DOI: 10.1116/1.3276429  0.837
2010 Khoshakhlagh A, Myers S, Kim H, Plis E, Gautam N, Lee SJ, Noh SK, Dawson LR, Krishna S. Long-Wave InAs/GaSb Superlattice Detectors Based on nBn and Pin Designs Ieee Journal of Quantum Electronics. 46: 959-964. DOI: 10.1109/Jqe.2010.2041635  0.839
2010 Plis E, Gautam N, Myers S, Sharma Y, Dawson LR, Krishna S. Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation Applied Physics Letters. 97: 143512. DOI: 10.1063/1.3499290  0.676
2010 Gautam N, Kim HS, Kutty MN, Plis E, Dawson LR, Krishna S. Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers Applied Physics Letters. 96: 231107. DOI: 10.1063/1.3446967  0.784
2010 Plis E, Khoshakhlagh A, Myers S, Gautam N, Sharma YD, Dawson LR, Krishna S, Lee SJ, Noh SK. Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation Applied Physics Letters. 96: 033502. DOI: 10.1063/1.3275711  0.831
2010 Kutty MN, Plis E, Khoshakhlagh A, Myers S, Gautam N, Smolev S, Sharma YD, Dawson R, Krishna S, Lee SJ, Noh SK. Study of surface treatments on InAs/GaSb superlattice lwir detectors Journal of Electronic Materials. 39: 2203-2209. DOI: 10.1007/S11664-010-1242-0  0.749
2010 Myers S, Plis E, Kim HS, Khoshakhlagh A, Gautam N, Lee SJ, Noh SK, Krishna S. Heterostructure engineering in Type II InAs/GaSb strained layer superlattices Physica Status Solidi (C). 7: 2506-2509. DOI: 10.1002/Pssc.200983869  0.829
2009 Kim HS, Plis E, Myers S, Khoshakhlagh A, Gautam N, Kutty MN, Sharma YD, Dawson LR, Krishna S. Improved performance of InAs/GaSb strained layer superlattice detectors with SU-8 passivation Proceedings of Spie. 7467. DOI: 10.1117/12.826775  0.815
2009 Khoshakhlagh A, Kim HS, Myers S, Gautam N, Lee SJ, Plis E, Noh SK, Dawson LR, Krishna S. Long wavelength InAs/GaSb superlattice detectors based on nBn and pin design Proceedings of Spie. 7298. DOI: 10.1117/12.818419  0.818
2009 Plis E, Myers S, Khoshakhlagh A, Kim HS, Sharma Y, Gautam N, Dawson R, Krishna S. InAs/GaSb strained layer superlattice detectors with nBn design Infrared Physics & Technology. 52: 335-339. DOI: 10.1016/J.Infrared.2009.09.008  0.851
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