☰

Omar R. Qasaimeh, Ph.D. - Publications

Affiliations: 
2000 University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
semiconductors
Tree Info Similar researchers PubMed Report error

62 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Qasaimeh O. Using graphene to tune vertical-cavity surface-emitting lasers Optical and Quantum Electronics. 52: 1-17. DOI: 10.1007/S11082-020-2252-7  0.39
2020 Qasaimeh O. Ultrafast and wide tunable VCSEL using graphene passive cavity Optical and Quantum Electronics. 52: 1-13. DOI: 10.1007/S11082-020-02438-X  0.361
2019 Qasaimeh O. An analytical model for vertical dual-cavity quantum-dot optical amplifiers Optical and Quantum Electronics. 51: 351. DOI: 10.1007/S11082-019-2071-X  0.45
2018 Qasaimeh O. All-optical multistability using cross-gain modulation in quantum-dot distributed feedback semiconductor optical amplifier Optical and Quantum Electronics. 50: 54. DOI: 10.1007/S11082-018-1333-3  0.492
2017 Qasaimeh O. Cross-Gain Modulation in Bistable Quantum-Dot VCSOAs Ieee Photonics Technology Letters. 29: 342-345. DOI: 10.1109/Lpt.2016.2647591  0.5
2017 Qasaimeh O. Simple semi-analytical model for bistable cross-gain modulation in quantum dot VCSOAs Optical and Quantum Electronics. 49: 309. DOI: 10.1007/S11082-017-1149-6  0.488
2017 Qasaimeh O. Contrast ratio and hysteresis width of optical bistability in quantum-dot vertical-cavity semiconductor optical amplifiers integrated with MEMS membrane Optical and Quantum Electronics. 49: 109. DOI: 10.1007/S11082-017-0949-Z  0.471
2016 Qasaimeh O. Novel Tunable Bistable Quantum-Dot Vertical-Cavity Semiconductor Optical Amplifiers Ieee Photonics Technology Letters. 28: 1553-1556. DOI: 10.1109/Lpt.2016.2558520  0.452
2016 Qasaimeh O. Bistability characteristics of different types of optical modes amplified by quantum dot vertical cavity semiconductor optical amplifiers Optics Communications. 364: 115-122. DOI: 10.1016/J.Optcom.2015.11.042  0.554
2015 Qasaimeh O. Novel closed-form solution for spin-polarization in quantum dot VCSEL Optics Communications. 350: 83-89. DOI: 10.1016/J.Optcom.2015.04.008  0.43
2015 Qasaimeh O. Effect of doping and energy detuning on the gain and crosstalk of quantum dot gain-clamped semiconductor optical amplifiers Optical and Quantum Electronics. 47: 2921-2936. DOI: 10.1007/S11082-015-0180-8  0.509
2015 Qasaimeh O. Effect of doping on the polarization characteristics of spin-injected quantum dot VCSEL Optical and Quantum Electronics. 47: 465-476. DOI: 10.1007/S11082-014-9874-6  0.502
2013 Qasaimeh O. Wide wavelength conversion in P-type doped quantum dot semiconductor optical amplifiers Optics Communications. 305: 1-7. DOI: 10.1016/J.Optcom.2013.04.059  0.514
2013 Qasaimeh O. Broadband gain-clamped linear quantum dash optical amplifiers Optical and Quantum Electronics. 45: 1277-1286. DOI: 10.1007/S11082-013-9750-9  0.489
2011 Qasaimeh O. Efficiency of four-wave mixing of doped closely spaced energy states quantum dash semiconductor optical amplifiers Optical Engineering. 50: 94203. DOI: 10.1117/1.3626208  0.426
2011 Qasaimeh O, Al-Otum HM. Cross-gain modulation in closely spaced energy states quantum dash semiconductor optical amplifiers Optics Communications. 284: 4635-4641. DOI: 10.1016/J.Optcom.2011.06.010  0.436
2010 Qasaimeh O. Small-signal parameters of quantum dash lasers with multiple coupled energy states Optical Engineering. 49: 114202. DOI: 10.1117/1.3509369  0.428
2010 Qasaimeh O. Differential Gain of Closely Spaced Energy States in Quantum Dashes Journal of Lightwave Technology. 28: 1906-1912. DOI: 10.1109/Jlt.2010.2050297  0.347
2009 Qasaimeh O, Qasaimeh HY. Theoretical stability analysis of quantum dash distributed Bragg reflector lasers Optical Engineering. 48: 124202. DOI: 10.1117/1.3275456  0.467
2009 Qasaimeh O. Low-Current N-Type Quantum Dash Semiconductor Optical Amplifiers Ieee Photonics Technology Letters. 21: 1390-1392. DOI: 10.1109/Lpt.2009.2027442  0.465
2009 Qasaimeh OR. Ultra-Fast Gain Recovery and Compression Due to Auger-Assisted Relaxation in Quantum Dot Semiconductor Optical Amplifiers Journal of Lightwave Technology. 27: 2530-2536. DOI: 10.1109/Jlt.2009.2014176  0.47
2009 Qasaimeh O. Effect of Doping on the Optical Characteristics of Quantum-Dot Semiconductor Optical Amplifiers Journal of Lightwave Technology. 27: 1978-1984. DOI: 10.1109/Jlt.2008.2005589  0.452
2009 Qasaimeh O. Vertical coupling in multiple stacks quantum-dot semiconductor optical amplifiers Journal of Physics D. 42: 234001. DOI: 10.1088/0022-3727/42/23/234001  0.471
2009 Qasaimeh O. Dynamics of optical pulse amplification and saturation in multiple state quantum dot semiconductor optical amplifiers Optical and Quantum Electronics. 41: 99-111. DOI: 10.1007/S11082-009-9325-Y  0.502
2008 Qasaimeh O. Novel Closed-Form Model for Multiple-State Quantum-Dot Semiconductor Optical Amplifiers Ieee Journal of Quantum Electronics. 44: 652-657. DOI: 10.1109/Jqe.2008.922324  0.48
2008 Qasaimeh O. Analytical Model for Cross-Gain Modulation and Crosstalk in Quantum-Well Semiconductor Optical Amplifiers Journal of Lightwave Technology. 26: 449-456. DOI: 10.1109/Jlt.2007.911103  0.47
2006 Ababneh JI, Qasaimeh O. Simple model for quantum-dot semiconductor optical amplifiers using artificial neural networks Ieee Transactions On Electron Devices. 53: 1543-1550. DOI: 10.1109/Ted.2006.875803  0.433
2005 Qasaimeh O. Characteristics of wavelength conversion of short optical pulses in quantum dot semiconductor optical amplifiers Optical and Quantum Electronics. 37: 661-673. DOI: 10.1007/S11082-005-7677-5  0.526
2005 Qasaimeh O. Linewidth enhancement factor of quantum dot lasers Optical and Quantum Electronics. 37: 495-507. DOI: 10.1007/S11082-005-4224-3  0.514
2004 Qasaimeh O. Theory of four-wave mixing wavelength conversion in quantum dot semiconductor optical amplifiers Ieee Photonics Technology Letters. 16: 993-995. DOI: 10.1109/Lpt.2004.824943  0.501
2004 Qasaimeh O. Characteristics of cross-gain (XG) wavelength conversion in quantum dot semiconductor optical amplifiers Ieee Photonics Technology Letters. 16: 542-544. DOI: 10.1109/Lpt.2003.821047  0.566
2004 Qasaimeh O. Modulation bandwidth of inhomogeneously broadened InAs/GaAs quantum dot lasers Optics Communications. 236: 387-394. DOI: 10.1016/J.Optcom.2004.03.053  0.543
2003 Qasaimeh O. Effect of inhomogeneous line broadening on gain and differential gain of quantum dot lasers Ieee Transactions On Electron Devices. 50: 1575-1581. DOI: 10.1109/Ted.2003.813907  0.538
2003 Qasaimeh O. Optical gain and saturation characteristics of quantum-dot semiconductor optical amplifiers Ieee Journal of Quantum Electronics. 39: 793-798. DOI: 10.1109/Jqe.2003.810770  0.551
2003 Qasaimeh O. An analytical model for quantum dot semiconductor optical amplifiers Optics Communications. 222: 277-287. DOI: 10.1016/S0030-4018(03)01557-8  0.555
2001 Ghosh S, Lenihan AS, Dutt MVG, Qasaimeh O, Steel DG, Bhattacharya P. Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1455-1458. DOI: 10.1116/1.1374623  0.665
2001 Qasaimeh O, Zhou W, Bhattacharya P, Huffaker D, Deppe DG. Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications Journal of Lightwave Technology. 19: 546-552. DOI: 10.1109/50.920853  0.533
2001 Zhou W, Bhattacharya P, Qasaimeh O. InP-based cylindrical microcavity light-emitting diodes Ieee Journal of Quantum Electronics. 37: 48-54. DOI: 10.1109/3.892723  0.523
2000 Bhatiacharya P, Krishna S, Zhu D, Phillips J, Klotzkin D, Qasaimeh O, Zhou WD, Singh J, Mccann PJ, Namjou K. Optoelectronic Device Applications of Self-Organized In(Ga,Al)As/Ga(Al)As Quantum Dots Mrs Proceedings. 618. DOI: 10.1557/Proc-618-195  0.729
2000 Qasaimeh O, Zhou W, Bhattacharya P, Huffaker D, Deppe D. Monolithically integrated low-power phototransceiver incorporating microcavity LEDs and multiquantum-well phototransistors Ieee Photonics Technology Letters. 12: 1683-1685. DOI: 10.1109/68.896348  0.501
2000 Qasaimeh O, Ma Z, Bhattacharya P, Croke ET. Monolithically integrated multichannel SiGe/Si p-i-n-HBT photoreceiver arrays Journal of Lightwave Technology. 18: 1548-1553. DOI: 10.1109/50.896216  0.536
2000 Bhattacharya P, Klotzkin D, Qasaimeh O, Zhou W, Krishna S, Zhu D. High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers Ieee Journal of Selected Topics in Quantum Electronics. 6: 426-438. DOI: 10.1109/2944.865098  0.727
2000 Krishna S, Qasaimeh O, Bhattacharya P, McCann PJ, Namjou K. Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser Applied Physics Letters. 76: 3355-3357. DOI: 10.1063/1.126646  0.718
2000 Qasaimeh O, Zhou WD, Bhattacharya P, Huffaker D, Deppe DG. Monolithically integrated low-power phototransceiver incorporating InGaAs/GaAs quantum-dot microcavity LED and modulated barrier photodiode Electronics Letters. 36: 1955-1957. DOI: 10.1049/El:20001352  0.514
2000 Zhou WD, Sabarinathan J, Kochman B, Berg E, Qasaimeh O, Pang S, Bhattacharya P. Electrically injected single-defect photonic bandgap surface-emitting laser at room temperature Electronics Letters. 36: 1541-1542. DOI: 10.1049/El:20001131  0.667
1999 Linder KK, Phillips J, Qasaimeh O, Liu XF, Krishna S, Bhattacharya P. Growth and electroluminescent properties of self-organized In[sub 0.4]Ga[sub 0.6]As/GaAs quantum dots grown on silicon Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1116. DOI: 10.1116/1.590704  0.731
1999 Gebretsadik H, Qasaimeh O, Jiang H, Bhattacharya P, Caneau C, Bhat R. Design and realization of a 1.55-/spl mu/m patterned vertical cavity surface emitting laser with lattice-mismatched mirror layers Journal of Lightwave Technology. 17: 2595-2604. DOI: 10.1109/50.809682  0.417
1999 Krishna S, Zhu D, Xu J, Linder KK, Qasaimeh O, Bhattacharya P, Huffaker DL. Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm Journal of Applied Physics. 86: 6135-6138. DOI: 10.1063/1.371664  0.647
1999 Qasaimeh O, Zhou W, Phillips J, Krishna S, Bhattacharya P, Dutta M. Bistability and self-pulsation in quantum-dot lasers with intracavity quantum-dot saturable absorbers Applied Physics Letters. 74: 1654-1656. DOI: 10.1063/1.123644  0.733
1999 Linder KK, Phillips J, Qasaimeh O, Liu XF, Krishna S, Bhattacharya P, Jiang JC. Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates Applied Physics Letters. 74: 1355-1357. DOI: 10.1063/1.123548  0.729
1999 Zhou W, Qasaimeh O, Phillips J, Krishna S, Bhattacharya P. Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers Applied Physics Letters. 74: 783-785. DOI: 10.1063/1.123366  0.773
1999 Linder KK, Phillips J, Qasaimeh O, Bhattacharya P, Jiang JC. In(Ga)As/GaAs self-organized quantum dot light emitters grown on silicon substrates Journal of Crystal Growth. 201202: 1186-1189. DOI: 10.1016/S0022-0248(99)00024-X  0.655
1998 Rieh JS, Qasaimeh O, Lu LH, Yang K, Katehi LPB, Bhattacharya P, Croke ET. Single- and Dual-Feedback Transimpedance Amplifiers Implemented by SiGe HBT Technology Ieee Microwave and Guided Wave Letters. 8: 63-65. DOI: 10.1109/75.658642  0.32
1998 Qasaimeh O, Bhattacharya P, Croke ET. SiGe-Si quantum-well electroabsorption modulators Ieee Photonics Technology Letters. 10: 807-809. DOI: 10.1109/68.681491  0.451
1998 Qasaimeh O, Kamath K, Bhattacharya P, Phillips J. Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots Applied Physics Letters. 72: 1275-1277. DOI: 10.1063/1.121049  0.678
1998 Gebretsadik H, Bhattacharya PK, Kamath KK, Qasaimeh OR, Klotzkin DJ, Caneau C, Bhat R. InP-based 1.5 /spl mu/m vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors Electronics Letters. 34: 1316-1318. DOI: 10.1049/El:19980919  0.434
1997 Qasaimeh O, Singh S, Bhattacharya P. Electroabsorption and electrooptic effect in SiGe-Si quantum wells: realization of low-voltage optical modulators Ieee Journal of Quantum Electronics. 33: 1532-1536. DOI: 10.1109/3.622633  0.435
1997 Zebda Y, Qasaimeh O. Analysis of transient response of light amplifying optical switch Optics Communications. 135: 128-132. DOI: 10.1016/S0030-4018(96)00596-2  0.309
1996 Zebda Y, Qasaimeh O. The effect of carrier transition mechanisms on frequency response of multiquantum well PIN photodiode Optics Communications. 123: 71-75. DOI: 10.1016/0030-4018(95)00501-3  0.302
1995 Zebda Y, Qasaimeh O. A modified model of the light amplifying optical switch (LAOS) Ieee Journal of Quantum Electronics. 31: 1302-1307. DOI: 10.1109/3.391095  0.323
1994 Zebda Y, Qasaimeh O. Frequency Response and Quantum Efficiency of PIN Photodiode Journal of Optical Communications. 15: 185-189. DOI: 10.1515/Joc.1994.15.5.185  0.426
1994 Zebda Y, Qasaimeh O. A new physical model of the light amplifying optical switch (LAGS) Ieee Transactions On Electron Devices. 41: 2248-2255. DOI: 10.1109/16.337435  0.312
Show low-probability matches.