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Junseok Heo, Ph.D. - Publications

Affiliations: 
2011 University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
semiconductors
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34 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Xing Z, Akter A, Kum HS, Baek Y, Ra YH, Yoo G, Lee K, Mi Z, Heo J. Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption. Scientific Reports. 12: 4301. PMID 35277566 DOI: 10.1038/s41598-022-08323-9  0.734
2020 Park M, Baek Y, Dinare M, Lee D, Park KH, Ahn J, Kim D, Medina J, Choi WJ, Kim S, Zhou C, Heo J, Lee K. Hetero-integration enables fast switching time-of-flight sensors for light detection and ranging. Scientific Reports. 10: 2764. PMID 32066791 DOI: 10.1038/S41598-020-59677-X  0.334
2019 Kim D, Han S, Jung J, Baek Y, Son J, Lee K, Heo J. Improved visible-blindness of AlGaN deep ultraviolet photodiode with monolithically integrated angle-insensitive Fabry-Perot filter. Optics Express. 27: 37446-37453. PMID 31878524 DOI: 10.1364/Oe.27.037446  0.323
2019 Park J, Yoo G, Heo J. CdSe/ZnS quantum dot encapsulated MoS phototransistor for enhanced radiation hardness. Scientific Reports. 9: 1411. PMID 30723221 DOI: 10.1038/S41598-018-37902-Y  0.365
2017 Park J, Park Y, Yoo G, Heo J. Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors. Nanoscale Research Letters. 12: 599. PMID 29164338 DOI: 10.1186/S11671-017-2368-2  0.318
2017 Yoo G, Choi SL, Park SJ, Lee KT, Lee S, Oh MS, Heo J, Park HJ. Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters. Scientific Reports. 7: 40945. PMID 28098252 DOI: 10.1038/Srep40945  0.323
2017 Hazari A, Hsiao FC, Yan L, Heo J, Millunchick JM, Dallesasse JM, Bhattacharya P. $1.3~\mu $ m Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Photonic Integrated Circuit Ieee Journal of Quantum Electronics. 53: 1-9. DOI: 10.1109/Jqe.2017.2708526  0.596
2017 Lee S, Park Y, Yoo G, Heo J. Wavelength-selective enhancement of photo-responsivity in metal-gated multi-layer MoS2 phototransistors Applied Physics Letters. 111: 223106. DOI: 10.1063/1.5003315  0.318
2017 Yoo G, Hong S, Heo J, Kim S. Enhanced photoresponsivity of multilayer MoS2 transistors using high work function MoOx overlayer Applied Physics Letters. 110: 053112. DOI: 10.1063/1.4975626  0.348
2016 Yoo G, Park Y, Sang P, Baac HW, Heo J. High-frequency optoacoustic transmitter based on nanostructured germanium via metal-assisted chemical etching Optical Materials Express. 6: 2567-2572. DOI: 10.1364/Ome.6.002567  0.332
2016 Park Y, Baac HW, Heo J, Yoo G. Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors Applied Physics Letters. 108: 083102. DOI: 10.1063/1.4942406  0.311
2015 Park Y, Jahangir S, Park Y, Bhattacharya P, Heo J. InGaN/GaN nanowires grown on SiO2 and light emitting diodes with low turn on voltages. Optics Express. 23: A650-6. PMID 26072889 DOI: 10.1364/Oe.23.00A650  0.575
2015 Yoon S, Heo J. Optoacoustic Ultrasound Generator Based on Nanostructured Germanium Korean Journal of Optics and Photonics. 26: 255-260. DOI: 10.3807/Kjop.2015.26.5.255  0.311
2015 Yoo G, Yoon H, Heo J, Thakur UK, Park HJ, Baac HW. All-Optical Ultrasound Transducer Using CNT-PDMS and Etalon Thin-Film Structure Ieee Photonics Journal. 7. DOI: 10.1109/Jphot.2015.2496862  0.302
2013 Bhattacharya P, Xiao B, Das A, Bhowmick S, Heo J. Solid state electrically injected exciton-polariton laser. Physical Review Letters. 110: 206403. PMID 25167434 DOI: 10.1103/Physrevlett.110.206403  0.605
2013 Heo J, Jahangir S, Xiao B, Bhattacharya P. Room-temperature polariton lasing from GaN nanowire array clad by dielectric microcavity. Nano Letters. 13: 2376-80. PMID 23634649 DOI: 10.1021/Nl400060J  0.621
2013 Deshpande S, Heo J, Das A, Bhattacharya P. Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire. Nature Communications. 4: 1675. PMID 23575679 DOI: 10.1038/Ncomms2691  0.616
2013 Das A, Bhattacharya P, Heo J, Banerjee A, Guo W. Polariton Bose-Einstein condensate at room temperature in an Al(Ga)N nanowire-dielectric microcavity with a spatial potential trap. Proceedings of the National Academy of Sciences of the United States of America. 110: 2735-40. PMID 23382183 DOI: 10.1073/Pnas.1210842110  0.74
2013 Heo J, Zhou Z, Guo W, Ooi BS, Bhattacharya P. Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy Applied Physics Letters. 103: 181102. DOI: 10.1063/1.4827338  0.601
2012 Das A, Heo J, Bayraktaroglu A, Guo W, Ng TK, Phillips J, Ooi BS, Bhattacharya P. Room temperature strong coupling effects from single ZnO nanowire microcavity. Optics Express. 20: 11830-7. PMID 22714170 DOI: 10.1364/Oe.20.011830  0.666
2012 Heo J, Bhattacharya P. Monolithic single gallium nitride nanowire laser on silicon Spie Newsroom. DOI: 10.1117/2.1201201.004070  0.521
2012 Heo J, Bhowmick S, Bhattacharya P. Threshold Characteristics of Quantum Dot Rolled-Up Microtube Lasers Ieee Journal of Quantum Electronics. 48: 927-933. DOI: 10.1109/Jqe.2012.2197177  0.581
2012 Bhowmick S, Heo J, Bhattacharya P. A quantum dot rolled-up microtube directional coupler Applied Physics Letters. 101. DOI: 10.1063/1.4764530  0.57
2012 Kum H, Heo J, Jahangir S, Banerjee A, Guo W, Bhattacharya P. Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts Applied Physics Letters. 100. DOI: 10.1063/1.4711850  0.716
2011 Heo J, Jiang Z, Xu J, Bhattacharya P. Coherent and directional emission at 1.55 μm from PbSe colloidal quantum dot electroluminescent device on silicon. Optics Express. 19: 26394-8. PMID 22274223 DOI: 10.1364/Oe.19.026394  0.661
2011 Banerjee A, Doğan F, Heo J, Manchon A, Guo W, Bhattacharya P. Spin relaxation in InGaN quantum disks in GaN nanowires. Nano Letters. 11: 5396-400. PMID 22049993 DOI: 10.1021/Nl203091F  0.759
2011 Das A, Heo J, Jankowski M, Guo W, Zhang L, Deng H, Bhattacharya P. Room temperature ultralow threshold GaN nanowire polariton laser. Physical Review Letters. 107: 066405. PMID 21902349 DOI: 10.1103/Physrevlett.107.066405  0.62
2011 Guo W, Zhang M, Bhattacharya P, Heo J. Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics. Nano Letters. 11: 1434-8. PMID 21366223 DOI: 10.1021/Nl103649D  0.573
2011 Banerjee A, Heo J, Bhattacharya P. Spin lifetimes in wurtzite InGaN/ GaN quantum disk-in-nanowire heterostructures from time resolved photoluminescence measurements Photomedicine and Laser Surgery. 531-532. DOI: 10.1109/Pho.2011.6110656  0.768
2011 Das A, Heo J, Jankowski M, Guo W, Zhang L, Deng H, Bhattacharya P. Room temperature polariton lasing from a single GaN nanowire microcavity Photomedicine and Laser Surgery. 119-120. DOI: 10.1109/Pho.2011.6110454  0.623
2011 Heo J, Guo W, Bhattacharya P. Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon Applied Physics Letters. 98: 21110. DOI: 10.1063/1.3540688  0.595
2010 Heo J, Zhu T, Zhang C, Xu J, Bhattacharya P. Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots. Optics Letters. 35: 547-9. PMID 20160813 DOI: 10.1364/Ol.35.000547  0.663
2010 Bhattacharya P, Das A, Basu D, Guo W, Heo J. An electrically injected quantum dot spin polarized single photon source Applied Physics Letters. 96: 101105. DOI: 10.1063/1.3357426  0.773
2008 Yang J, Heo J, Zhu T, Xu J, Topolancik J, Vollmer F, Ilic R, Bhattacharya P. Enhanced photoluminescence from embedded PbSe colloidal quantum dots in silicon-based random photonic crystal microcavities Applied Physics Letters. 92: 261110. DOI: 10.1063/1.2954007  0.765
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