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Animesh Banerjee, Ph.D. - Publications

Affiliations: 
2014 Electrical Engineering University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
semiconductors
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25 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Bhattacharya P, Frost T, Banerjee A, Jahangir S. InGaN/GaN Quantum Dot and Nanowire LEDs and Lasers Advances in Science and Technology. 93: 270-275. DOI: 10.4028/Www.Scientific.Net/Ast.93.270  0.639
2014 Banerjee A, Frost T, Jahangir S, Bhattacharya P. Green-Emitting $(\lambda=525~{\rm nm})$ InGaN/GaN Quantum Dot Light Emitting Diodes Grown on Quantum Dot Dislocation Filters Ieee Journal of Quantum Electronics. 50: 228-235. DOI: 10.1109/Jqe.2014.2304954  0.63
2014 Frost T, Banerjee A, Jahangir S, Bhattacharya P. Temperature-dependent measurement of Auger recombination in In0.40Ga0.60N/GaN red-emitting (λ = 630 nm) quantum dots Applied Physics Letters. 104: 81121. DOI: 10.1063/1.4867244  0.496
2013 Das A, Bhattacharya P, Heo J, Banerjee A, Guo W. Polariton Bose-Einstein condensate at room temperature in an Al(Ga)N nanowire-dielectric microcavity with a spatial potential trap. Proceedings of the National Academy of Sciences of the United States of America. 110: 2735-40. PMID 23382183 DOI: 10.1073/Pnas.1210842110  0.687
2013 Bhattacharya P, Banerjee A, Frost T. InGaN/GaN quantum dot blue and green lasers Proceedings of Spie. 8640. DOI: 10.1117/12.2007025  0.527
2013 Frost T, Banerjee A, Sun K, Chuang SL, Bhattacharya P. InGaN/GaN Quantum Dot Red $(\lambda=630~{\rm nm})$ Laser Ieee Journal of Quantum Electronics. 49: 923-931. DOI: 10.1109/Jqe.2013.2281062  0.622
2013 Banerjee A, Frost T, Bhattacharya P. Nitride-based quantum dot visible lasers Journal of Physics D. 46: 264004. DOI: 10.1088/0022-3727/46/26/264004  0.555
2013 Frost T, Banerjee A, Bhattacharya P. Small-signal modulation and differential gain of red-emitting (λ = 630 nm) InGaN/GaN quantum dot lasers Applied Physics Letters. 103: 211111. DOI: 10.1063/1.4832332  0.476
2013 Shao L, Zhang M, Banerjee A, Bhattacharya PK, Pipe KP. Electrically driven nanoscale acoustic source based on a two-dimensional electron gas Applied Physics Letters. 103. DOI: 10.1063/1.4818550  0.507
2013 Grossklaus K, Banerjee A, Jahangir S, Bhattacharya P, Millunchick J. Misorientation defects in coalesced self-catalyzed GaN nanowires Journal of Crystal Growth. 371: 142-147. DOI: 10.1016/J.Jcrysgro.2013.02.019  0.303
2013 Banerjee A, Frost T, Jahangir S, Stark E, Bhattacharya P. InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy Journal of Crystal Growth. 378: 566-570. DOI: 10.1016/J.Jcrysgro.2012.12.158  0.633
2013 Jahangir S, Banerjee A, Bhattacharya P. Carrier lifetimes in green emitting InGaN/GaN disks-in-nanowire and characteristics of green light emitting diodes Physica Status Solidi (C). 10: 812-815. DOI: 10.1002/Pssc.201200583  0.613
2013 Banerjee A, Frost T, Jahangir S, Stark E, Bhattacharya P. Ridge waveguide InGaN/GaN quantum dot edge emitting visible lasers Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 816-819. DOI: 10.1002/Pssc.201200577  0.644
2012 Das A, Bhattacharya P, Banerjee A, Jankowski M. Dynamic polariton condensation in a single GaN nanowire-dielectric microcavity Physical Review B. 85: 195321. DOI: 10.1103/Physrevb.85.195321  0.501
2012 Banerjee A, Frost T, Stark E, Bhattacharya P. Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ = 420 nm) on c-plane GaN substrate Applied Physics Letters. 101. DOI: 10.1063/1.4738499  0.537
2012 Kum H, Heo J, Jahangir S, Banerjee A, Guo W, Bhattacharya P. Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts Applied Physics Letters. 100. DOI: 10.1063/1.4711850  0.679
2011 Banerjee A, Doğan F, Heo J, Manchon A, Guo W, Bhattacharya P. Spin relaxation in InGaN quantum disks in GaN nanowires. Nano Letters. 11: 5396-400. PMID 22049993 DOI: 10.1021/Nl203091F  0.722
2011 Banerjee A, Heo J, Bhattacharya P. Spin lifetimes in wurtzite InGaN/ GaN quantum disk-in-nanowire heterostructures from time resolved photoluminescence measurements Photomedicine and Laser Surgery. 531-532. DOI: 10.1109/Pho.2011.6110656  0.731
2011 Shao L, Zhang M, Banerjee A, Bhattacharya P, Pipe KP. Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors Applied Physics Letters. 99: 243507. DOI: 10.1063/1.3665625  0.51
2011 Zhang M, Banerjee A, Lee C, Hinckley JM, Bhattacharya P. A InGaN/GaN quantum dot green (λ=524 nm) laser Applied Physics Letters. 98: 221104. DOI: 10.1063/1.3596436  0.727
2011 Guo W, Banerjee A, Bhattacharya PK, Ooi BS. InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon Applied Physics Letters. 98: 193102. DOI: 10.1063/1.3588201  0.626
2011 Guo W, Banerjee A, Zhang M, Bhattacharya P. Barrier height of Pt–InxGa1−xN (0≤x≤0.5) nanowire Schottky diodes Applied Physics Letters. 98: 183116. DOI: 10.1063/1.3579143  0.578
2011 Zhang M, Banerjee A, Bhattacharya P. High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm) Journal of Crystal Growth. 323: 470-472. DOI: 10.1016/J.Jcrysgro.2010.12.038  0.645
2010 Guo W, Zhang M, Banerjee A, Bhattacharya P. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. Nano Letters. 10: 3355-9. PMID 20701296 DOI: 10.1021/Nl101027X  0.629
2010 Zhang M, Bhattacharya P, Guo W, Banerjee A. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions Applied Physics Letters. 96: 132103. DOI: 10.1063/1.3374882  0.594
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