| Year |
Citation |
Score |
| 2022 |
Myeong G, Shin W, Sung K, Kim S, Lim H, Kim B, Jin T, Park J, Lee T, Fuhrer MS, Watanabe K, Taniguchi T, Liu F, Cho S. Dirac-source diode with sub-unity ideality factor. Nature Communications. 13: 4328. PMID 35882859 DOI: 10.1038/s41467-022-31849-5 |
0.565 |
|
| 2020 |
Kim S, Myeong G, Park J, Watanabe K, Taniguchi T, Cho S. Monolayer Hexagonal Boron Nitride Tunnel Barrier Contact for Low-Power Black Phosphorus Heterojunction Tunnel Field-Effect Transistors. Nano Letters. PMID 32329621 DOI: 10.1021/Acs.Nanolett.0C01115 |
0.357 |
|
| 2020 |
Li L, Zhang J, Myeong G, Shin W, Lim H, Kim B, Kim S, Jin T, Cavill S, Kim BS, Kim C, Lischner J, Ferreira A, Cho S. Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature. Acs Nano. PMID 32267673 DOI: 10.1021/Acsnano.0C01037 |
0.424 |
|
| 2020 |
Kim S, Myeong G, Shin W, Lim H, Kim B, Jin T, Chang S, Watanabe K, Taniguchi T, Cho S. Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches. Nature Nanotechnology. PMID 31988502 DOI: 10.1038/S41565-019-0623-7 |
0.344 |
|
| 2016 |
Cho S, Zhong R, Schneeloch JA, Gu G, Mason N. Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire. Scientific Reports. 6: 21767. PMID 26911258 DOI: 10.1038/Srep21767 |
0.402 |
|
| 2016 |
Lee JI, Jang S, Cho S, Kim E. Evolution of various quantum transport properties in a suspended disordered graphene device by the high bias voltage exposure Current Applied Physics. 16: 731-737. DOI: 10.1016/J.Cap.2016.04.006 |
0.472 |
|
| 2015 |
Cho S, Dellabetta B, Zhong R, Schneeloch J, Liu T, Gu G, Gilbert MJ, Mason N. Aharonov-Bohm oscillations in a quasi-ballistic three-dimensional topological insulator nanowire. Nature Communications. 6: 7634. PMID 26158768 DOI: 10.1038/Ncomms8634 |
0.399 |
|
| 2014 |
Ping J, Yudhistira I, Ramakrishnan N, Cho S, Adam S, Fuhrer MS. Disorder-induced magnetoresistance in a two-dimensional electron system. Physical Review Letters. 113: 047206. PMID 25105653 DOI: 10.1103/Physrevlett.113.047206 |
0.663 |
|
| 2013 |
Cho S, Dellabetta B, Yang A, Schneeloch J, Xu Z, Valla T, Gu G, Gilbert MJ, Mason N. Symmetry protected Josephson supercurrents in three-dimensional topological insulators. Nature Communications. 4: 1689. PMID 23575693 DOI: 10.1038/Ncomms2701 |
0.392 |
|
| 2012 |
Cho S, Kim D, Syers P, Butch NP, Paglione J, Fuhrer MS. Topological insulator quantum dot with tunable barriers. Nano Letters. 12: 469-72. PMID 22181853 DOI: 10.1021/Nl203851G |
0.642 |
|
| 2012 |
Kim D, Cho S, Butch NP, Syers P, Kirshenbaum K, Adam S, Paglione J, Fuhrer MS. Surface conduction of topological Dirac electrons in bulk insulating Bi 2Se 3 Nature Physics. 8: 459-463. DOI: 10.1038/Nphys2286 |
0.647 |
|
| 2011 |
Cho S, Butch NP, Paglione J, Fuhrer MS. Insulating behavior in ultrathin bismuth selenide field effect transistors. Nano Letters. 11: 1925-7. PMID 21486055 DOI: 10.1021/Nl200017F |
0.565 |
|
| 2011 |
Cho S, Fuhrer M. Massless and massive particle-in-a-box states in single- and bi-layer graphene Nano Research. 4: 385-392. DOI: 10.1007/S12274-011-0093-1 |
0.596 |
|
| 2009 |
Fuhrer MS, Chen JH, Jang C, Cho S, Xiao S, Ishigami M, Cullen WG, Williams ED. Scattering mechanisms in graphene Device Research Conference - Conference Digest, Drc. 193. DOI: 10.1109/DRC.2009.5354947 |
0.612 |
|
| 2008 |
Adam S, Cho S, Fuhrer MS, Das Sarma S. Density inhomogeneity driven percolation metal-insulator transition and dimensional crossover in graphene nanoribbons. Physical Review Letters. 101: 046404. PMID 18764347 DOI: 10.1103/Physrevlett.101.046404 |
0.637 |
|
| 2008 |
Cho S, Fuhrer MS. Charge transport and inhomogeneity near the minimum conductivity point in graphene Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.081402 |
0.607 |
|
| 2007 |
Cho S, Chen YF, Fuhrer MS. Gate-tunable graphene spin valve Applied Physics Letters. 91. DOI: 10.1063/1.2784934 |
0.65 |
|
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