Chaun Jang, Ph.D. - Publications

Affiliations: 
2011 Physics University of Maryland, College Park, College Park, MD 
Area:
Two-dimensional Materials

14 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Kim J, Jang C, Wang X, Paglione J, Hong S, Sayed S, Chun D, Kim D. Electrical detection of the inverse Edelstein effect on the surface of SmB6 Physical Review B. 102. DOI: 10.1103/Physrevb.102.054410  0.534
2019 Park J, Yeu IW, Han G, Jang C, Kwak JY, Hwang CS, Choi JH. Optical control of the layer degree of freedom through Wannier-Stark states in polar 3R MoS2. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 31026843 DOI: 10.1088/1361-648X/Ab1D0F  0.301
2019 Kim J, Jang C, Wang X, Paglione J, Hong S, Lee J, Choi H, Kim D. Electrical detection of the surface spin polarization of the candidate topological Kondo insulator SmB6 Physical Review B. 99. DOI: 10.1103/Physrevb.99.245148  0.559
2019 Kim SJ, Park YH, Jang C, Hruban A, Koo HC. Anisotropic magnetoresistance in a Ni81Fe19/SiO2/Ca-Bi2Se3 hybrid structure Thin Solid Films. 676: 87-91. DOI: 10.1016/J.Tsf.2019.03.004  0.32
2015 Park TE, Suh J, Seo D, Park J, Lin DY, Huang YS, Choi HJ, Wu J, Jang C, Chang J. Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition Applied Physics Letters. 107. DOI: 10.1063/1.4936571  0.33
2014 Suh J, Park TE, Lin DY, Fu D, Park J, Jung HJ, Chen Y, Ko C, Jang C, Sun Y, Sinclair R, Chang J, Tongay S, Wu J. Doping against the native propensity of MoS2: degenerate hole doping by cation substitution. Nano Letters. 14: 6976-82. PMID 25420217 DOI: 10.1021/Nl503251H  0.388
2010 Cullen WG, Yamamoto M, Burson KM, Chen JH, Jang C, Li L, Fuhrer MS, Williams ED. High-fidelity conformation of graphene to SiO2 topographic features. Physical Review Letters. 105: 215504. PMID 21231322 DOI: 10.1103/PhysRevLett.105.215504  0.735
2009 Chen JH, Cullen WG, Jang C, Fuhrer MS, Williams ED. Defect scattering in graphene. Physical Review Letters. 102: 236805. PMID 19658959 DOI: 10.1103/Physrevlett.102.236805  0.717
2009 Fuhrer MS, Chen JH, Jang C, Cho S, Xiao S, Ishigami M, Cullen WG, Williams ED. Scattering mechanisms in graphene Device Research Conference - Conference Digest, Drc. 193. DOI: 10.1109/DRC.2009.5354947  0.688
2009 Chen JH, Jang C, Ishigami M, Xiao S, Cullen WG, Williams ED, Fuhrer MS. Diffusive charge transport in graphene on SiO2 Solid State Communications. 149: 1080-1086. DOI: 10.1016/J.Ssc.2009.02.042  0.764
2008 Jang C, Adam S, Chen JH, Williams ED, Das Sarma S, Fuhrer MS. Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering. Physical Review Letters. 101: 146805. PMID 18851558 DOI: 10.1103/Physrevlett.101.146805  0.676
2008 Chen JH, Jang C, Xiao S, Ishigami M, Fuhrer MS. Intrinsic and extrinsic performance limits of graphene devices on SiO2. Nature Nanotechnology. 3: 206-9. PMID 18654504 DOI: 10.1038/Nnano.2008.58  0.748
2008 Chen JH, Jang C, Adam S, Fuhrer MS, Williams ED, Ishigami M. Charged-impurity scattering in graphene Nature Physics. 4: 377-381. DOI: 10.1038/Nphys935  0.745
2007 Chen JH, Ishigami M, Jang C, Hines DR, Fuhrer MS, Williams ED. Printed graphene circuits Advanced Materials. 19: 3623-3627. DOI: 10.1002/Adma.200701059  0.704
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