Arthur J. Freeman - Publications

Affiliations: 
1962-1967 Massachusetts Institute of Technology, Cambridge, MA, United States 
 1967-2014 Physics & Astronomy Northwestern University, Evanston, IL 
Area:
First-principles simulations of complex materials, including their structural, electronic, magnetic, optical and mechanical properties.
Website:
https://www.mccormick.northwestern.edu/research-faculty/directory/profiles/freeman-arthur.html

149 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Wang PL, Kostina SS, Meng F, Kontsevoi OY, Liu Z, Chen P, Peters JA, Hanson M, He Y, Chung DY, Freeman AJ, Wessels BW, Kanatzidis MG. Refined Synthesis and Crystal Growth of Pb2P2Se6 for Hard Radiation Detectors Crystal Growth and Design. 16: 5100-5109. DOI: 10.1021/Acs.Cgd.6B00684  0.56
2016 Wibowo AC, Malliakas CD, Li H, Stoumpos CC, Chung DY, Wessels BW, Freeman AJ, Kanatzidis MG. An unusual crystal growth method of the chalcohalide semiconductor, β-Hg3S2Cl2: A new candidate for hard radiation detection Crystal Growth and Design. 16: 2678-2684. DOI: 10.1021/Acs.Cgd.5B01802  1
2015 Im J, Stoumpos CC, Jin H, Freeman AJ, Kanatzidis MG. Antagonism between Spin-Orbit Coupling and Steric Effects Causes Anomalous Band Gap Evolution in the Perovskite Photovoltaic Materials CH3NH3Sn1-xPbxI3. The Journal of Physical Chemistry Letters. 6: 3503-9. PMID 27120685 DOI: 10.1021/Acs.Jpclett.5B01738  1
2015 Bugaris DE, Han F, Im J, Chung DY, Freeman AJ, Kanatzidis MG. Crystal Growth, Structures, and Properties of the Complex Borides, LaOs2Al2B and La2Os2AlB2. Inorganic Chemistry. 54: 8049-57. PMID 26241801 DOI: 10.1021/Acs.Inorgchem.5B01275  1
2015 Calta NP, Im J, Rodriguez AP, Fang L, Bugaris DE, Chasapis TC, Freeman AJ, Kanatzidis MG. Frontispiece: Hybridization Gap and Dresselhaus Spin Splitting in EuIr4 In2 Ge4. Angewandte Chemie (International Ed. in English). 54. PMID 26218220 DOI: 10.1002/Anie.201583261  1
2015 Calta NP, Im J, Rodriguez AP, Fang L, Bugaris DE, Chasapis TC, Freeman AJ, Kanatzidis MG. Hybridization Gap and Dresselhaus Spin Splitting in EuIr4In2Ge4. Angewandte Chemie (International Ed. in English). 54: 9186-91. PMID 26111038 DOI: 10.1002/Anie.201504315  1
2015 Zhou N, Kim MG, Loser S, Smith J, Yoshida H, Guo X, Song C, Jin H, Chen Z, Yoon SM, Freeman AJ, Chang RP, Facchetti A, Marks TJ. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells. Proceedings of the National Academy of Sciences of the United States of America. 112: 7897-902. PMID 26080437 DOI: 10.1073/Pnas.1508578112  1
2015 Stoumpos CC, Frazer L, Clark DJ, Kim YS, Rhim SH, Freeman AJ, Ketterson JB, Jang JI, Kanatzidis MG. Hybrid germanium iodide perovskite semiconductors: active lone pairs, structural distortions, direct and indirect energy gaps, and strong nonlinear optical properties. Journal of the American Chemical Society. 137: 6804-19. PMID 25950197 DOI: 10.1021/Jacs.5B01025  1
2015 Oba M, Nakamura K, Akiyama T, Ito T, Weinert M, Freeman AJ. Electric-field-induced modification of the magnon energy, exchange interaction, and curie temperature of transition-metal thin films. Physical Review Letters. 114: 107202. PMID 25815963 DOI: 10.1103/Physrevlett.114.107202  0.64
2015 Fang L, Im J, Stoumpos CC, Shi F, Dravid V, Leroux M, Freeman AJ, Kwok WK, Chung DY, Kanatzidis M. Two-dimensional mineral [Pb2BiS3][AuTe2]: high-mobility charge carriers in single-atom-thick layers. Journal of the American Chemical Society. 137: 2311-7. PMID 25612093 DOI: 10.1021/Ja5111688  1
2015 Sebastian M, Peters JA, Stoumpos CC, Im J, Kostina SS, Liu Z, Kanatzidis MG, Freeman AJ, Wessels BW. Excitonic emissions and above-band-gap luminescence in the single-crystal perovskite semiconductors CsPbB r3 and CsPbC l3 Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.235210  1
2015 Peters JA, Liu Z, Im J, Nguyen S, Sebastian M, Freeman AJ, Kanatzidis MG, Wessels BW. Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/7/075303  1
2015 Onoue M, Trimarchi G, Freeman AJ, Popescu V, Matsen MR. Magnetization of ternary alloys based on Fe0.65Ni0.35 invar with 3 d transition metal additions: An ab initio study Journal of Applied Physics. 117. DOI: 10.1063/1.4905912  1
2015 Islam SM, Vanishri S, Li H, Stoumpos CC, Peters JA, Sebastian M, Liu Z, Wang S, Haynes AS, Im J, Freeman AJ, Wessels B, Kanatzidis MG. Cs2Hg3S4: A low-dimensional direct bandgap semiconductor Chemistry of Materials. 27: 370-378. DOI: 10.1021/Cm504089R  1
2015 Im J, Stoumpos CC, Jin H, Freeman AJ, Kanatzidis MG. Antagonism between Spin-Orbit Coupling and Steric Effects Causes Anomalous Band Gap Evolution in the Perovskite Photovoltaic Materials CH3NH3Sn1-xPbxI3 Journal of Physical Chemistry Letters. 6: 3503-3509. DOI: 10.1021/acs.jpclett.5b01738  1
2015 Lobo RPSM, Bontemps N, Bertoni MI, Mason TO, Poeppelmeier KR, Freeman AJ, Park MS, Medvedeva JE. Optical conductivity of mayenite: From insulator to metal Journal of Physical Chemistry C. 119: 8849-8856. DOI: 10.1021/Acs.Jpcc.5B00736  1
2015 Bugaris DE, Han F, Im J, Chung DY, Freeman AJ, Kanatzidis MG. Crystal Growth, Structures, and Properties of the Complex Borides, LaOs2Al2B and La2Os2AlB2 Inorganic Chemistry. 54: 8049-8057. DOI: 10.1021/acs.inorgchem.5b01275  1
2015 Bugaris DE, Sturza M, Han F, Im J, Chung DY, Freeman AJ, Kanatzidis MG. Flux crystal growth of the ternary polygermanide LaPtGe2, a p-type metal European Journal of Inorganic Chemistry. 2015: 2164-2172. DOI: 10.1002/Ejic.201500019  1
2015 Wang PL, Liu Z, Chen P, Peters JA, Tan G, Im J, Lin W, Freeman AJ, Wessels BW, Kanatzidis MG. Hard Radiation Detection from the Selenophosphate Pb2P2Se6 Advanced Functional Materials. DOI: 10.1002/Adfm.201501826  1
2014 Kim M, Im J, Freeman AJ, Ihm J, Jin H. Switchable S = 1/2 and J = 1/2 Rashba bands in ferroelectric halide perovskites. Proceedings of the National Academy of Sciences of the United States of America. 111: 6900-4. PMID 24785294 DOI: 10.1073/Pnas.1405780111  1
2014 Islam SM, Im J, Freeman AJ, Kanatzidis MG. Ba2HgS5--a molecular trisulfide salt with dumbbell-like (HgS2)2- ions. Inorganic Chemistry. 53: 4698-704. PMID 24721116 DOI: 10.1021/Ic500388S  1
2014 Agha EC, Malliakas CD, Im J, Jin H, Zhao LD, Freeman AJ, Kanatzidis MG. LiPbSb3S6: a semiconducting sulfosalt with very low thermal conductivity. Inorganic Chemistry. 53: 673-5. PMID 24405022 DOI: 10.1021/Ic402262Z  1
2014 Trimarchi G, Zhang X, Freeman AJ, Zunger A. Structurally unstable AIII BiO3 perovskites are predicted to be topological insulators but their stable structural forms are trivial band insulators Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.161111  1
2014 Clark DJ, Senthilkumar V, Le CT, Weerawarne DL, Shim B, Jang JI, Shim JH, Cho J, Sim Y, Seong MJ, Rhim SH, Freeman AJ, Chung KH, Kim YS. Strong optical nonlinearity of CVD-grown MoS2 monolayer as probed by wavelength-dependent second-harmonic generation Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.121409  1
2014 Peters JA, Sebastian M, Nguyen S, Liu Z, Im J, Freeman AJ, Kanatzidis MG, Wessels BW. Optical investigation of defects in semi-insulating Tl6 I4S single crystals Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.035205  1
2014 Liu Z, Peters JA, Sebastian M, Kanatzidis MG, Im J, Freeman AJ, Wessels BW. Photo-induced current transient spectroscopy of single crystal Tl6I4Se Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/115002  1
2014 Akiyama T, Nakamura K, Ito T, Freeman AJ. Electronic bands and excited states of III-V semiconductor polytypes with screened-exchange density functional calculations Applied Physics Letters. 104. DOI: 10.1063/1.4870095  0.32
2014 Dolgonos A, Lam K, Poeppelmeier KR, Freeman AJ, Mason TO. Electronic and optical properties of Ga3-xIn 5+xSn2O16: An experimental and theoretical study Journal of Applied Physics. 115. DOI: 10.1063/1.4861130  1
2014 Li LH, Kontsevoi OY, Freeman AJ. Atomic-scale understanding of the interaction of poly(3-hexylthiophene) with the NiO (100) surface: A first-principles study Journal of Physical Chemistry C. 118: 20298-20305. DOI: 10.1021/Jp504503S  1
2014 Li LH, Kontsevoi OY, Freeman AJ. Orientation-dependent electronic structures and optical properties of the P3HT:PCBM interface: A first-principles GW-BSE study Journal of Physical Chemistry C. 118: 10263-10270. DOI: 10.1021/Jp501295P  1
2014 Wang S, Liu Z, Peters JA, Sebastian M, Nguyen SL, Malliakas CD, Stoumpos CC, Im J, Freeman AJ, Wessels BW, Kanatzidis MG. Crystal growth of Tl4CdI6: A wide band gap semiconductor for hard radiation detection Crystal Growth and Design. 14: 2401-2410. DOI: 10.1021/Cg5001446  1
2014 Liu Z, Peters JA, Li H, Kanatzidis MG, Im J, Jin H, Freeman AJ, Wessels BW. Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs2Hg6S7 Journal of Electronic Materials. 44: 222-226. DOI: 10.1007/S11664-014-3372-2  1
2013 Liu Q, Guo Y, Freeman AJ. Tunable Rashba effect in two-dimensional LaOBiS2 films: ultrathin candidates for spin field effect transistors. Nano Letters. 13: 5264-70. PMID 24127876 DOI: 10.1021/Nl4027346  0.76
2013 Wibowo AC, Malliakas CD, Chung DY, Im J, Freeman AJ, Kanatzidis MG. Thallium mercury chalcobromides, TlHg6Q4Br5 (Q = S, Se). Inorganic Chemistry. 52: 11875-80. PMID 24106977 DOI: 10.1021/Ic4014174  1
2013 Hotta K, Nakamura K, Akiyama T, Ito T, Oguchi T, Freeman AJ. Atomic-layer alignment tuning for giant perpendicular magnetocrystalline anisotropy of 3d transition-metal thin films. Physical Review Letters. 110: 267206. PMID 23848919 DOI: 10.1103/Physrevlett.110.267206  0.32
2013 Sturza M, Han F, Shoemaker DP, Malliakas CD, Chung DY, Jin H, Freeman AJ, Kanatzidis MG. NaBa2Cu3S5: a doped p-type degenerate semiconductor. Inorganic Chemistry. 52: 7210-7. PMID 23731247 DOI: 10.1021/Ic4008284  1
2013 Im J, Trimarchi G, Peng H, Freeman AJ, Cloet V, Raw A, Poeppelmeier KR. KAg11(VO4)4 as a candidate p-type transparent conducting oxide. The Journal of Chemical Physics. 138: 194703. PMID 23697426 DOI: 10.1063/1.4804556  1
2013 Li LH, Kontsevoi OY, Rhim SH, Freeman AJ. Structural, electronic, and linear optical properties of organic photovoltaic PBTTT-C14 crystal. The Journal of Chemical Physics. 138: 164503. PMID 23635153 DOI: 10.1063/1.4802033  1
2013 Biswas K, Chung I, Song JH, Malliakas CD, Freeman AJ, Kanatzidis MG. Semiconducting [(Bi4Te4Br2)(Al2Cl(6-x)Br(x))]Cl2 and [Bi2Se2Br](AlCl4): cationic chalcogenide frameworks from Lewis acidic ionic liquids. Inorganic Chemistry. 52: 5657-9. PMID 23627985 DOI: 10.1021/Ic400782C  1
2013 Jin H, Rhim SH, Im J, Freeman AJ. Topological oxide insulator in cubic perovskite structure. Scientific Reports. 3: 1651. PMID 23575973 DOI: 10.1038/Srep01651  1
2013 Wibowo AC, Malliakas CD, Chung DY, Im J, Freeman AJ, Kanatzidis MG. Mercury bismuth chalcohalides, Hg3Q2Bi2Cl8 (Q = S, Se, Te): syntheses, crystal structures, band structures, and optical properties. Inorganic Chemistry. 52: 2973-9. PMID 23448152 DOI: 10.1021/Ic3023826  1
2013 Kitaoka Y, Nakamura K, Akiyama T, Ito T, Weinert M, Freeman AJ. Magnetism and multiplets in Fe-phthalocyanine molecules Journal of the Korean Physical Society. 63: 695-698. DOI: 10.3938/Jkps.63.695  0.64
2013 Nakamura K, Akiyama T, Ito T, Weinert M, Freeman AJ. Magneto-transport properties of Fe thin films in an external electric field Journal of the Korean Physical Society. 63: 612-615. DOI: 10.3938/Jkps.63.612  0.64
2013 Manuel P, Chapon LC, Trimarchi G, Todorov IS, Chung DY, Ouladdiaf B, Gutmann MJ, Freeman AJ, Kanatzidis MG. Influence of Cr doping on the magnetic structure of the FeAs-strips compound CaFe4As3: A single-crystal neutron diffraction study Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.104414  1
2013 Nakamura K, Rhim SH, Sugiyama A, Sano K, Akiyama T, Ito T, Weinert M, Freeman AJ. Electric-field-driven hole carriers and superconductivity in diamond Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.214506  1
2013 Kitaoka Y, Nakamura K, Akiyama T, Ito T, Weinert M, Freeman AJ. Excited Cr impurity states in Al2O3 from constraint density functional theory Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.205113  0.64
2013 Ye LH, Luo N, Peng LM, Weinert M, Freeman AJ. Dielectric constant of NiO and LDA+U Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.075115  0.64
2013 Morris CD, Li H, Jin H, Malliakas CD, Peters JA, Trikalitis PN, Freeman AJ, Wessels BW, Kanatzidis MG. Cs2MIIMIV 3Q8 (Q = S, Se, Te): An extensive family of layered semiconductors with diverse band gaps Chemistry of Materials. 25: 3344-3356. DOI: 10.1021/Cm401817R  1
2013 Nguyen SL, Malliakas CD, Peters JA, Liu Z, Im J, Zhao LD, Sebastian M, Jin H, Li H, Johnsen S, Wessels BW, Freeman AJ, Kanatzidis MG. Photoconductivity in Tl6SI4: A novel semiconductor for hard radiation detection Chemistry of Materials. 25: 2868-2877. DOI: 10.1021/Cm401406J  1
2013 Li H, Malliakas CD, Peters JA, Liu Z, Im J, Jin H, Morris CD, Zhao LD, Wessels BW, Freeman AJ, Kanatzidis MG. CsCdInQ3 (Q = Se, Te): New photoconductive compounds as potential materials for hard radiation detection Chemistry of Materials. 25: 2089-2099. DOI: 10.1021/Cm400634V  1
2013 Stoumpos CC, Malliakas CD, Peters JA, Liu Z, Sebastian M, Im J, Chasapis TC, Wibowo AC, Chung DY, Freeman AJ, Wessels BW, Kanatzidis MG. Crystal growth of the perovskite semiconductor CsPbBr3: A new material for high-energy radiation detection Crystal Growth and Design. 13: 2722-2727. DOI: 10.1021/Cg400645T  1
2012 Ye LH, Asahi R, Peng LM, Freeman AJ. Model GW study of the late transition metal monoxides. The Journal of Chemical Physics. 137: 154110. PMID 23083151 DOI: 10.1063/1.4758986  0.64
2012 Chung I, Song JH, Im J, Androulakis J, Malliakas CD, Li H, Freeman AJ, Kenney JT, Kanatzidis MG. CsSnI3: Semiconductor or metal? High electrical conductivity and strong near-infrared photoluminescence from a single material. High hole mobility and phase-transitions. Journal of the American Chemical Society. 134: 8579-87. PMID 22578072 DOI: 10.1021/Ja301539S  1
2012 Rahman G, Kim IG, Freeman AJ. Ab initio prediction of pressure-induced structural phase transition of superconducting FeSe. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 24: 095502. PMID 22317746 DOI: 10.1088/0953-8984/24/9/095502  0.6
2012 Androulakis I, Li H, Malliakas C, Peters JA, Liu Z, Wessels BW, Song JH, Jin H, Freeman AJ, Kanatzidis MG. Dimensionally reduced heavy atom semiconductors as candidate materials for γ-ray detection: The case of Cs 2Hg 6S 7 Materials Research Society Symposium Proceedings. 1341: 87-92. DOI: 10.1557/Opl.2011.1273  1
2012 Jin H, Im J, Freeman AJ. Topological insulator phase in halide perovskite structures Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.121102  1
2012 Tsumuraya T, Song JH, Freeman AJ. Linear optical properties and electronic structures of poly(3- hexylthiophene) and poly(3-hexylselenophene) crystals from first principles Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.075114  0.88
2012 Cho NK, Peters JA, Liu Z, Wessels BW, Johnsen S, Kanatzidis MG, Song JH, Jin H, Freeman A. Photoluminescent properties of semiconducting Tl 6I 4Se Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/1/015016  1
2012 Im J, Jin H, Li H, Peters JA, Liu Z, Wessels BW, Kanatzidis MG, Freeman AJ. Formation of native defects in the γ-ray detector material Cs 2 Hg6S7 Applied Physics Letters. 101. DOI: 10.1063/1.4767368  1
2012 Mitchell Hopper E, Peng H, Hawks SA, Freeman AJ, Mason TO. Defect mechanisms in the In2O3(ZnO)k system (k=3, 5, 7, 9) Journal of Applied Physics. 112. DOI: 10.1063/1.4764924  0.72
2012 Zhang S, Kontsevoi OY, Freeman AJ, Olson GB. Cohesion enhancing effect of magnesium in aluminum grain boundary: A first-principles determination Applied Physics Letters. 100. DOI: 10.1063/1.4725512  1
2012 Li H, Malliakas CD, Liu Z, Peters JA, Jin H, Morris CD, Zhao L, Wessels BW, Freeman AJ, Kanatzidis MG. CsHgInS3: A new quaternary semiconductor for γray detection Chemistry of Materials. 24: 4434-4441. DOI: 10.1021/Cm302838V  1
2012 Cloet V, Raw A, Poeppelmeier KR, Trimarchi G, Peng H, Im J, Freeman AJ, Perry NH, Mason TO, Zakutayev A, Ndione PF, Ginley DS, Perkins JD. Structural, optical, and transport properties of α- And β-Ag 3VO 4 Chemistry of Materials. 24: 3346-3354. DOI: 10.1021/Cm301119C  1
2012 Peng H, Song JH, Hopper EM, Zhu Q, Mason TO, Freeman AJ. Possible n-type carrier sources in In 2O 3(ZnO) k Chemistry of Materials. 24: 106-114. DOI: 10.1021/Cm202020G  0.88
2012 Chung I, Song JH, Jang JI, Freeman AJ, Kanatzidis MG. Na 2Ge 2Se 5: A highly nonlinear optical material Journal of Solid State Chemistry. 195: 161-165. DOI: 10.1016/J.Jssc.2012.05.038  1
2012 Stampfl C, Freeman AJ. Structure and stability of transition metal nitride interfaces from first-principles: AlN/VN, AlN/TiN, and VN/TiN Applied Surface Science. 258: 5638-5645. DOI: 10.1016/J.Apsusc.2012.02.046  1
2011 Androulakis J, Peter SC, Li H, Malliakas CD, Peters JA, Liu Z, Wessels BW, Song JH, Jin H, Freeman AJ, Kanatzidis MG. Dimensional reduction: a design tool for new radiation detection materials. Advanced Materials (Deerfield Beach, Fla.). 23: 4163-7. PMID 21826746 DOI: 10.1002/Adma.201102450  1
2011 Chung I, Biswas K, Song JH, Androulakis J, Chondroudis K, Paraskevopoulos KM, Freeman AJ, Kanatzidis MG. Rb4Sn5P4Se20: a semimetallic selenophosphate. Angewandte Chemie (International Ed. in English). 50: 8834-8. PMID 21812086 DOI: 10.1002/Anie.201104050  1
2011 Johnsen S, Liu Z, Peters JA, Song JH, Nguyen S, Malliakas CD, Jin H, Freeman AJ, Wessels BW, Kanatzidis MG. Thallium chalcohalides for X-ray and γ-ray detection. Journal of the American Chemical Society. 133: 10030-3. PMID 21671681 DOI: 10.1021/Ja202540T  1
2011 Liu Z, Peters JA, Zang C, Cho NK, Wessels BW, Johnsen S, Peter S, Androulakis J, Kanatzidis MG, Song JH, Jin H, Freeman AJ. Tl-based wide gap semiconductor materials for x-ray and gamma ray detection Proceedings of Spie - the International Society For Optical Engineering. 8018. DOI: 10.1117/12.883230  1
2011 Trimarchi G, Peng H, Im J, Freeman AJ, Cloet V, Raw A, Poeppelmeier KR, Biswas K, Lany S, Zunger A. Using design principles to systematically plan the synthesis of hole-conducting transparent oxides: Cu3VO4 and Ag 3VO4 as a case study Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.165116  1
2011 Hopper EM, Zhu Q, Song JH, Peng H, Freeman AJ, Mason TO. Electronic and thermoelectric analysis of phases in the In 2O3(ZnO)k system Journal of Applied Physics. 109. DOI: 10.1063/1.3530733  0.88
2011 Johnsen S, Peter SC, Nguyen SL, Song JH, Jin H, Freeman AJ, Kanatzidis MG. Tl2Hg3Q4 (Q = S, Se, and Te): High-density, wide-band-gap semiconductors Chemistry of Materials. 23: 4375-4383. DOI: 10.1021/Cm2019857  1
2011 Johnsen S, Liu Z, Peters JA, Song JH, Peter SC, Malliakas CD, Cho NK, Jin H, Freeman AJ, Wessels BW, Kanatzidis MG. Thallium chalcogenide-based wide-band-gap semiconductors: TlGaSe 2 for radiation detectors Chemistry of Materials. 23: 3120-3128. DOI: 10.1021/Cm200946Y  1
2011 Irwin MD, Servaites JD, Buchholz DB, Leever BJ, Liu J, Emery JD, Zhang M, Song JH, Durstock MF, Freeman AJ, Bedzyk MJ, Hersam MC, Chang RPH, Ratner MA, Marks TJ. Structural and electrical functionality of NiO interfacial films in bulk heterojunction organic solar cells Chemistry of Materials. 23: 2218-2226. DOI: 10.1021/Cm200229E  1
2010 Biswas K, Zhang Q, Chung I, Song JH, Androulakis J, Freeman AJ, Kanatzidis MG. Synthesis in ionic liquids: [Bi2Te2Br](AlCl4), a direct gap semiconductor with a cationic framework. Journal of the American Chemical Society. 132: 14760-2. PMID 20919739 DOI: 10.1021/Ja107483G  1
2010 Song JH, Jin H, Freeman AJ. Interfacial Dirac cones from alternating topological invariant superlattice structures of Bi2Se3. Physical Review Letters. 105: 096403. PMID 20868180 DOI: 10.1103/Physrevlett.105.096403  1
2010 Bera TK, Jang JI, Song JH, Malliakas CD, Freeman AJ, Ketterson JB, Kanatzidis MG. Soluble semiconductors AAsSe2 (A = Li, Na) with a direct-band-gap and strong second harmonic generation: a combined experimental and theoretical study. Journal of the American Chemical Society. 132: 3484-95. PMID 20170184 DOI: 10.1021/Ja9094846  1
2010 Park MS, Song JH, Medvedeva JE, Kim M, Kim IG, Freeman AJ. Electronic structure and volume effect on thermoelectric transport in p -type Bi and Sb tellurides Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.155211  1
2010 Mansourian-Hadavi N, Wansom S, Perry NH, Nagaraja AR, Mason TO, Ye LH, Freeman AJ. Transport and band structure studies of crystalline ZnRh2 O4 Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.075112  0.72
2010 Cui XY, Delley B, Freeman AJ, Stampfl C. Tunnel magnetoresistance in trilayer junctions from first principles: Cr δ -layer doped GaN/AlN/GaN (0 0 0 1) Journal of Magnetism and Magnetic Materials. 322: 395-399. DOI: 10.1016/J.Jmmm.2009.09.060  1
2009 Nascimento VB, Freeland JW, Saniz R, Moore RG, Mazur D, Liu H, Pan MH, Rundgren J, Gray KE, Rosenberg RA, Zheng H, Mitchell JF, Freeman AJ, Veltruska K, Plummer EW. Surface-stabilized nonferromagnetic ordering of a layered ferromagnetic manganite. Physical Review Letters. 103: 227201. PMID 20366122 DOI: 10.1103/Physrevlett.103.227201  1
2009 Chung I, Song JH, Kim MG, Malliakas CD, Karst AL, Freeman AJ, Weliky DP, Kanatzidis MG. The tellurophosphate K(4)P(8)Te(4): phase-change properties, exfoliation, photoluminescence in solution and nanospheres. Journal of the American Chemical Society. 131: 16303-12. PMID 19845382 DOI: 10.1021/Ja907273G  1
2009 Nakamura K, Shimabukuro R, Fujiwara Y, Akiyama T, Ito T, Freeman AJ. Giant modification of the magnetocrystalline anisotropy in transition-metal monolayers by an external electric field. Physical Review Letters. 102: 187201. PMID 19518905 DOI: 10.1103/PhysRevLett.102.187201  0.32
2009 Todorov I, Chung DY, Ye L, Freeman AJ, Kanatzidis MG. Synthesis, structure and charge transport properties of Yb(5)Al(2)Sb(6): a zintl phase with incomplete electron transfer. Inorganic Chemistry. 48: 4768-76. PMID 19374366 DOI: 10.1021/Ic900035A  1
2009 Todorov I, Chung DY, Malliakas CD, Li Q, Bakas T, Douvalis A, Trimarchi G, Gray K, Mitchell JF, Freeman AJ, Kanatzidis MG. CaFe4As3: a metallic iron arsenide with anisotropic magnetic and charge-transport properties. Journal of the American Chemical Society. 131: 5405-7. PMID 19334680 DOI: 10.1021/Ja900534H  1
2009 Chung I, Song JH, Jang JI, Freeman AJ, Ketterson JB, Kanatzidis MG. Flexible polar nanowires of Cs5BiP4Se12 from weak interactions between coordination complexes: strong nonlinear optical second harmonic generation. Journal of the American Chemical Society. 131: 2647-56. PMID 19183006 DOI: 10.1021/Ja808242G  1
2009 Cui XY, Delley B, Freeman AJ, Stampfl C. First-principles investigation of Mn δ -layer doped GaN/AlN/GaN (0001) tunneling junctions Journal of Applied Physics. 106. DOI: 10.1063/1.3194790  1
2009 Todorov I, Chung DY, Malliakas CD, Li Q, Bakas T, Douvalis A, Trimarchi G, Gray K, Mitchell JF, Freeman AJ, Kanatzidis MG. CaFe4As3: A metallic iron arsenide with anisotropic magnetic and charge-transport properties (Journal of the American Chemical Society (2009) 131, (5405-5407)) Journal of the American Chemical Society. 131: 17719. DOI: 10.1021/Ja907195H  1
2008 Saniz R, Norman MR, Freeman AJ. Orbital mixing and nesting in the bilayer manganites La2-2xSr1+2xMn2O7. Physical Review Letters. 101: 236402. PMID 19113571 DOI: 10.1103/Physrevlett.101.236402  0.56
2008 Song JH, Akiyama T, Freeman AJ. Stabilization of bulk p-type and surface n-type carriers in Mg-doped InN {0001} films. Physical Review Letters. 101: 186801. PMID 18999846 DOI: 10.1103/Physrevlett.101.186801  0.88
2008 Tsamourtzi K, Song JH, Bakas T, Freeman AJ, Trikalitis PN, Kanatzidis MG. Straightforward route to the adamantane clusters [Sn4Q10]4- (Q = S, Se, Te) and use in the assembly of open-framework chalcogenides (Me4N)2M[Sn4Se10] (M = Mn(II), Fe(II), Co(II), Zn(II)) including the first telluride member (Me4N)2Mn[Ge4Te10]. Inorganic Chemistry. 47: 11920-9. PMID 18998670 DOI: 10.1021/Ic801762H  1
2008 Bera TK, Song JH, Freeman AJ, Jang JI, Ketterson JB, Kanatzidis MG. Soluble direct-band-gap semiconductors LiAsS2 and NaAsS2: large electronic structure effects from weak As...S interactions and strong nonlinear optical response. Angewandte Chemie (International Ed. in English). 47: 7828-32. PMID 18756564 DOI: 10.1002/Anie.200801392  1
2008 Jin S, Yang Y, Medvedeva JE, Wang L, Li S, Cortes N, Ireland JR, Metz AW, Ni J, Hersam MC, Freeman AJ, Marks TJ. Tuning the properties of transparent oxide conductors. Dopant ion size and electronic structure effects on CdO-based transparent conducting oxides. Ga- and in-doped CdO thin films grown by MOCVD Chemistry of Materials. 20: 220-230. DOI: 10.1021/Cm702588M  1
2007 Saniz R, Barbiellini B, Platzman PM, Freeman AJ. Physisorption of positronium on quartz surfaces. Physical Review Letters. 99: 096101. PMID 17931020 DOI: 10.1103/PhysRevLett.99.096101  0.56
2007 Medvedeva JE, Freeman AJ, Geller CB, Rishel DM. Screened-exchange determination of the electronic properties of monoclinic, tetragonal, and cubic zirconia Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.235115  1
2006 Koh SE, Delley B, Medvedeva JE, Facchetti A, Freeman AJ, Marks TJ, Ratner MA. Quantum chemical analysis of electronic structure and n- and p-type charge transport in perfluoroarene-modified oligothiophene semiconductors. The Journal of Physical Chemistry. B. 110: 24361-70. PMID 17134188 DOI: 10.1021/Jp064840X  1
2006 Cui XY, Delley B, Freeman AJ, Stampfl C. Magnetic metastability in tetrahedrally bonded magnetic III-nitride semiconductors. Physical Review Letters. 97: 016402. PMID 16907389 DOI: 10.1103/Physrevlett.97.016402  1
2006 Nakamura K, Kato Y, Akiyama T, Ito T, Freeman AJ. Half-metallic exchange bias ferromagnetic/antiferromagnetic interfaces in transition-metal chalcogenides. Physical Review Letters. 96: 047206. PMID 16486886 DOI: 10.1103/Physrevlett.96.047206  0.32
2005 Cui XY, Medvedeva JE, Delley B, Freeman AJ, Newman N, Stampfl C. Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN. Physical Review Letters. 95: 256404. PMID 16384484 DOI: 10.1103/Physrevlett.95.256404  1
2005 Yang Y, Jin S, Medvedeva JE, Ireland JR, Metz AW, Ni J, Hersam MC, Freeman AJ, Marks TJ. CdO as the archetypical transparent conducting oxide. Systematics of dopant ionic radius and electronic structure effects on charge transport and band structure. Journal of the American Chemical Society. 127: 8796-804. PMID 15954786 DOI: 10.1021/Ja051272A  1
2005 Stampfl C, Freeman AJ. Stable and metastable structures of the multiphase tantalum nitride system Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.024111  1
2005 Lee JJ, Medvedeva JE, Song JH, Cui Y, Freeman AJ, Ketterson JB. Ferromagnetism of Mn/Ge multilayers grown by molecular beam epitaxy Journal of Superconductivity and Novel Magnetism. 18: 335-338. DOI: 10.1007/S10948-005-0005-2  1
2004 Jin S, Yang Y, Medvedeva JE, Ireland JR, Metz AW, Ni J, Kannewurf CR, Freeman AJ, Marks TJ. Dopant ion size and electronic structure effects on transparent conducting oxides. Sc-doped CdO thin films grown by MOCVD. Journal of the American Chemical Society. 126: 13787-93. PMID 15493938 DOI: 10.1021/Ja0467925  1
2004 Nakamura K, Takeda Y, Akiyama T, Ito T, Freeman AJ. Atomically sharp magnetic domain wall in thin film Fe(110): a first principles noncollinear magnetism study. Physical Review Letters. 93: 057202. PMID 15323728 DOI: 10.1103/Physrevlett.93.057202  0.32
2003 Zhao YJ, Shishidou T, Freeman AJ. Ruderman-Kittel-Kasuya-Yosida-like ferromagnetism in MnxGe1-x. Physical Review Letters. 90: 047204. PMID 12570455 DOI: 10.1103/Physrevlett.90.047204  1
2003 Stampfl C, Freeman AJ. Metallic to insulating nature of TaNx: Role of Ta and N vacancies Physical Review B - Condensed Matter and Materials Physics. 67: 641081-641087. DOI: 10.1103/Physrevb.67.064108  1
2003 Freeman AJ, Zhao YJ. Advanced tetrahedrally-bonded magnetic semiconductors for spintronic applications Journal of Physics and Chemistry of Solids. 64: 1453-1459. DOI: 10.1016/S0022-3697(03)00120-3  1
2002 Picozzi S, Asahi R, Geller CB, Freeman AJ. Accurate first-principles detailed-balance determination of auger recombination and impact ionization rates in semiconductors. Physical Review Letters. 89: 197601. PMID 12443147 DOI: 10.1103/Physrevlett.89.197601  0.48
2002 Cho S, Choi S, Cha GB, Hong SC, Kim Y, Zhao YJ, Freeman AJ, Ketterson JB, Kim BJ, Kim YC, Choi BC. Room-temperature ferromagnetism in (Zn1-xMnx)GeP2 semiconductors. Physical Review Letters. 88: 257203. PMID 12097125 DOI: 10.1103/Physrevlett.88.257203  1
2002 Stampfl C, Freeman AJ. Formation and stability of enhanced superhard nanostructured AlN/VN and AlN/TiN superlattice materials Materials Research Society Symposium - Proceedings. 750: 507-512. DOI: 10.1557/Proc-750-Y6.5  1
2002 Yu L, Stampfl C, Marshall D, Eshrich T, Narayanan V, Rowell JM, Newman N, Freeman AJ. Mechanism and control of the metal-to-insulator transition in rocksalt tantalum nitride Physical Review B - Condensed Matter and Materials Physics. 65: 2451101-2451105. DOI: 10.1103/Physrevb.65.245110  1
2002 Stampfl C, Asahi R, Freeman AJ. Surface properties of the refractory metal-nitride semiconductor ScN: Screened-exchange LDA-FLAPW investigations Physical Review B - Condensed Matter and Materials Physics. 65: 1612041-1612044. DOI: 10.1103/Physrevb.65.161204  1
2002 Mryasov ON, Gornostyrev YN, Van Schilfgaarde M, Freeman AJ. Superdislocation core structure in L12 Ni3Al, Ni3Ge and Fe3Ge: Peierls-Nabarro analysis starting from ab-initio GSF energetics calculations Acta Materialia. 50: 4545-4554. DOI: 10.1016/S1359-6454(02)00282-3  1
2002 Asahi R, Wang A, Babcock JR, Edleman NL, Metz AW, Lane MA, Dravid VP, Kannewurf CR, Freeman AJ, Marks TJ. First-principles calculations for understanding high conductivity and optical transparency in InxCd1-xO films Thin Solid Films. 411: 101-105. DOI: 10.1016/S0040-6090(02)00196-7  1
2001 Cho S, Youn SJ, Kim Y, DiVenere A, Wong GK, Freeman AJ, Ketterson JB. Polarity inversion in polar-nonpolar-polar heterostructures. Physical Review Letters. 87: 126403. PMID 11580533 DOI: 10.1103/Physrevlett.87.126403  1
2001 Wang A, Babcock JR, Edleman NL, Metz AW, Lane MA, Asahi R, Dravid VP, Kannewurf CR, Freeman AJ, Marks TJ. Indium-cadmium-oxide films having exceptional electrical conductivity and optical transparency: clues for optimizing transparent conductors. Proceedings of the National Academy of Sciences of the United States of America. 98: 7113-6. PMID 11416196 DOI: 10.1073/Pnas.121188298  1
2001 Stampfl C, Mannstadt W, Asahi R, Freeman AJ. Electronic structure and physical properties of early transition metal mononitrides: Density-functional theory LDA, GGA, and screened-exchange LDA FLAPW calculations Physical Review B - Condensed Matter and Materials Physics. 63: 1551061-15510611. DOI: 10.1103/Physrevb.63.155106  1
2001 Medvedeva JE, Anisimov VI, Korotin MA, Mryasov ON, Freeman AJ. Effect of Coulomb correlation and magnetic ordering on the electronic structure of two hexagonal phases of ferroelectromagnetic YMnO3 Journal of Physics Condensed Matter. 12: 4947-4958. DOI: 10.1088/0953-8984/12/23/304  1
2000 Ottaviano L, Profeta G, Continenza A, Santucci S, Freeman AJ, Modesti S. Defect-induced perturbation on the 1/3 ML Sn-Si(111) surface: A voltage-dependent scanning tunneling microscopy study Surface Science. 464: 57-67. DOI: 10.1016/S0039-6028(00)00677-4  1
1995 Mryasov ON, Novikov DL, Freeman AJ. Lda calculations of the pressure induced structural changes and phase transitions in pbti03 Ferroelectrics. 164: 279-289. DOI: 10.1080/00150199508221850  1
1995 Freeman AJ, Mryasov ON, Wang DS, Wu R. Density functional theory of the electronic and magnetic properties of interfaces and multilayers Materials Science and Engineering B. 31: 225-232. DOI: 10.1016/0921-5107(94)08019-4  1
1994 Xu JH, Freeman AJ. Effects of ternary additions on the twin energy and site preference in y-TiAl Journal of Materials Research. 9: 1755-1760. DOI: 10.1557/Jmr.1994.1755  1
1994 Song Y, Tang SP, Xu JH, Mryasov ON, Freeman AJ, Woodward C, Dimiduk DM. Ti-Ti bonding in γ-TiAl and F.C.C. Ti Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 70: 987-1002. DOI: 10.1080/01418639408240267  1
1994 Greenwood KB, Anderson MT, Poeppelmeier KR, Novikov DL, Freeman AJ, Dabrowski B, Gramsch SA, Burdett JK. Structure-property relationships in layered tin-titanium cuprates Physica C: Superconductivity and Its Applications. 235: 349-350. DOI: 10.1016/0921-4534(94)91398-6  1
1994 Novikov DL, Mryasov ON, Freeman AJ. Anisotropic compressibility and effects of pressure on the electronic structure and Tc of Hg-based superconductors Physica C: Superconductivity and Its Applications. 222: 38-46. DOI: 10.1016/0921-4534(94)90112-0  1
1994 Novikov DL, Mryasov ON, Freeman AJ. Anisotropic compressibility and effects of pressure on the electronic structure and Tc for superconducting infinite layer compounds Physica C: Superconductivity and Its Applications. 219: 246-252. DOI: 10.1016/0921-4534(94)90042-6  1
1993 Novikov DL, Freeman AJ. Van Hove singularities and the role of doping in the stabilization, synthesis and superconductivity of HgBa2Can-1CunO2n+2+δ Physica C: Superconductivity and Its Applications. 216: 273-283. DOI: 10.1016/0921-4534(93)90071-W  1
1992 Lin W, Xu JH, Freeman AJ. Cohesive properties, electronic structure, and bonding characteristics of RuAl—A comparison to NiAl Journal of Materials Research. 7: 592-604. DOI: 10.1557/Jmr.1992.0592  1
1991 Hong T, Freeman AJ. Effect of ternary additions on the structural stability and electronic structure of intermetallic compounds: Al3Ti + Cu Journal of Materials Research. 6: 330-338. DOI: 10.1557/Jmr.1991.0330  1
1991 Freeman AJ, Chun C. Magnetic anisotropy of ferromagnetic Fe and Co thin films (invited) (abstract) Journal of Applied Physics. 69: 5215. DOI: 10.1063/1.348079  1
1990 Freeman AJ, Continenza A, Massidda S, Grossman JC. Structural and electronic properties and possible superconductivity in simple cubic Fe Physica C: Superconductivity and Its Applications. 166: 317-322. DOI: 10.1016/0921-4534(90)90411-7  1
1989 Fu CL, Freeman AJ, Hong SC. Hyperfine interactions at surfaces and interfaces Hyperfine Interactions. 49: 393. DOI: 10.1007/Bf02405151  1
1988 Hong SC, Fu CL, Freeman AJ. Structural and magnetic properties of Au/Pd/Au sandwiches: A total energy all-electron approach Journal of Applied Physics. 63: 3655-3656. DOI: 10.1063/1.340674  1
1987 Gonis A, Zhang X, Freeman AJ, Turchi P, Stocks GM, Nicholson DM. Configurational energies and effective cluster interactions in substitutionally disordered binary alloys. Physical Review. B, Condensed Matter. 36: 4630-4646. PMID 9943474 DOI: 10.1103/Physrevb.36.4630  1
1986 Zhang X, Hwang M, Gonis A, Freeman AJ. Numerical and analytic methods for the study of disordered alloy surfaces. Physical Review. B, Condensed Matter. 34: 5169-5176. PMID 9940343 DOI: 10.1103/Physrevb.34.5169  1
1986 Gordon RT, Halperin WP, Gordon D, Freeman AJ. Alterations in magnetic characteristics produced by intracellular particles Journal of Biological Physics. 14: 77-79. DOI: 10.1007/Bf01857744  1
1984 Posternak M, Baldereschi A, Freeman AJ, Wimmer E. Prediction of electronic surface states in layered materials: Graphite Physical Review Letters. 52: 863-866. DOI: 10.1103/Physrevlett.52.863  1
1983 Posternak M, Baldereschi A, Freeman AJ, Wimmer E, Weinert M. Prediction of electronic interlayer states in graphite and reinterpretation of alkali bands in graphite intercalation compounds Physical Review Letters. 50: 761-764. DOI: 10.1103/Physrevlett.50.761  1
1983 Freeman AJ, Xu Jh, Jarlborg T. Electronic structure and magnetism of modulated structures Journal of Magnetism and Magnetic Materials. 31: 909-914. DOI: 10.1016/0304-8853(83)90735-7  1
1982 Steiner P, Hüfner S, Freeman AJ, Wang Ds. Surface effects in the valence band XPS spectrum of copper Solid State Communications. 44: 619-622. DOI: 10.1016/0038-1098(82)90566-X  1
1976 Kautz RL, Freeman AJ, Schwartz BB. The surface susceptibility of a simple metal Physics Letters A. 57: 473-474. DOI: 10.1016/0375-9601(76)90131-6  1
1975 Myron HW, Freeman AJ, Moss SC. Electronically induced lattice instabilities in b.c.c. Zr Solid State Communications. 17: 1467-1470. DOI: 10.1016/0038-1098(75)90974-6  1
1968 Watson RE, Freeman AJ. Local-moment-conduction-electron exchange coupling and RKKY spin densities in metals Journal of Applied Physics. 39: 1100. DOI: 10.1063/1.1656180  1
1965 Freeman AJ, Watson RE. Nonlinear shielding in rare-earth crystal field interactions Journal of Applied Physics. 36: 928. DOI: 10.1063/1.1714265  1
1965 Blum N, Freeman AJ, Shaner JW, Grodzins L. Mössbauer studies of spin flop in antiferromagnetic hematite Journal of Applied Physics. 36: 1169-1170. DOI: 10.1063/1.1714153  1
1963 Freeman AJ, Watson RE. Contribution of spin polarization to transferred hyperfine effects in iron-series fluorides Journal of Applied Physics. 34: 1032. DOI: 10.1063/1.1729356  1
1962 Blume M, Freeman AJ, Watson RE. Neutron magnetic scattering from rare-earth ions Journal of Applied Physics. 33: 1242. DOI: 10.1063/1.1728676  1
1960 Freeman AJ, Watson RE. Effect of crystalline fields on magnetic-form factors Journal of Applied Physics. DOI: 10.1063/1.1984755  1
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