Year |
Citation |
Score |
2020 |
Shen CL, Yang SM, Lu KC. Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor Deposition. Nanomaterials (Basel, Switzerland). 10. PMID 32961744 DOI: 10.3390/nano10091880 |
0.336 |
|
2018 |
Huang WJ, Chen YY, Hsu HM, Lu KC. Single Crystalline Iron Silicide and Beta-Iron Disilicide Nanowires Formed through Chemical Vapor Deposition. Materials (Basel, Switzerland). 11. PMID 30486400 DOI: 10.3390/Ma11122384 |
0.398 |
|
2016 |
Wu YT, Huang CW, Chiu CH, Chang CF, Chen JY, Lin TY, Huang YT, Lu KC, Yeh PH, Wu WW. Nickel/Platinum Dual Silicide Axial Nanowire Heterostructures with Excellent Photosensor Applications. Nano Letters. PMID 26789624 DOI: 10.1021/Acs.Nanolett.5B04309 |
0.503 |
|
2015 |
Hsu HF, Tsai PC, Lu KC. Single-crystalline chromium silicide nanowires and their physical properties. Nanoscale Research Letters. 10: 50. PMID 25852347 DOI: 10.1186/s11671-015-0776-8 |
0.347 |
|
2013 |
Lu CM, Hsu HF, Lu KC. Growth of single-crystalline cobalt silicide nanowires and their field emission property. Nanoscale Research Letters. 8: 308. PMID 23819795 DOI: 10.1186/1556-276X-8-308 |
0.438 |
|
2011 |
Lu KC, Wu WW, Ouyang H, Lin YC, Huang Y, Wang CW, Wu ZW, Huang CW, Chen LJ, Tu KN. The influence of surface oxide on the growth of metal/semiconductor nanowires. Nano Letters. 11: 2753-8. PMID 21657260 DOI: 10.1021/Nl201037M |
0.586 |
|
2010 |
Wu WW, Lu KC, Wang CW, Hsieh HY, Chen SY, Chou YC, Yu SY, Chen LJ, Tu KN. Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions. Nano Letters. 10: 3984-9. PMID 20809607 DOI: 10.1021/Nl101842W |
0.563 |
|
2008 |
Lin YC, Lu KC, Wu WW, Bai J, Chen LJ, Tu KN, Huang Y. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices. Nano Letters. 8: 913-8. PMID 18266331 DOI: 10.1021/Nl073279R |
0.585 |
|
2007 |
Lu KC, Wu WW, Wu HW, Tanner CM, Chang JP, Chen LJ, Tu KN. In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction. Nano Letters. 7: 2389-94. PMID 17604405 DOI: 10.1021/Nl071046U |
0.592 |
|
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