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Jianfeng Chen, Ph.D. - Publications

Affiliations: 
2011 Electrical Engineering Stony Brook University, Stony Brook, NY, United States 
Area:
High power and high speed light emitters, carrier dynamics in nanostructures, molecular beam epitaxy
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9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Moe CG, Grandusky JR, Chen J, Kitamura K, Mendrick MC, Jamil M, Toita M, Gibb SR, Schowalter LJ. High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2037856  0.384
2014 Moe CG, Garrett GA, Grandusky JR, Chen J, Rodak LE, Rotella P, Wraback M, Schowalter LJ. Correlation between optical and electrical performance of mid-ultraviolet light-emitting diodes on AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 786-789. DOI: 10.1002/Pssc.201300686  0.354
2013 Grandusky JR, Chen J, Gibb SR, Mendrick MC, Moe CG, Rodak L, Garrett GA, Wraback M, Schowalter LJ. 270nm pseudomorphic ultraviolet light-emitting diodes with over 60mW continuous wave output power Applied Physics Express. 6. DOI: 10.7567/Apex.6.032101  0.402
2011 Hosoda T, Chen J, Tsvid G, Westerfeld D, Liang R, Kipshidze G, Shterengas L, Belenky G. Progress in development of room temperature CW GaSb based diode lasers for 2-3.5 μm spectral region International Journal of High Speed Electronics and Systems. 20: 43-49. DOI: 10.1142/S0129156411006386  0.672
2011 Liang R, Chen J, Kipshidze G, Westerfeld D, Shterengas L, Belenky G. High-power 2.2-μm diode lasers with heavily strained active region Ieee Photonics Technology Letters. 23: 603-605. DOI: 10.1109/Lpt.2011.2114647  0.679
2010 Chen J, Kipshidze G, Shterengas L. High-power 2μm diode lasers with asymmetric waveguide Ieee Journal of Quantum Electronics. 46: 1464-1469. DOI: 10.1109/Jqe.2010.2051021  0.634
2010 Chen J, Kipshidze G, Shterengas L. Diode lasers with asymmetric waveguide and improved beam properties Applied Physics Letters. 96. DOI: 10.1063/1.3452354  0.622
2009 Chen J, Kipshidze G, Shterengas L, Hosoda T, Wang Y, Donetsky D, Belenky G. 2.7-μm GaSb-based diode lasers with quinary waveguide Ieee Photonics Technology Letters. 21: 1112-1114. DOI: 10.1109/Lpt.2009.2023224  0.68
2008 Chen J, Donetsky D, Shterengas L, Kisin MV, Kipshidze G, Belenky G. Effect of quantum well compressive strain above 1 % on differential gain and threshold current density in type-I GaSb-based diode lasers Ieee Journal of Quantum Electronics. 44: 1204-1210. DOI: 10.1109/Jqe.2008.2002104  0.646
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