Junqiao Wu, Ph.D. - Publications

Affiliations: 
2002 University of California, Berkeley, Berkeley, CA 

217 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Ci P, Sun M, Upadhyaya M, Song H, Jin L, Sun B, Jones MR, Ager JW, Aksamija Z, Wu J. Giant Isotope Effect of Thermal Conductivity in Silicon Nanowires. Physical Review Letters. 128: 085901. PMID 35275649 DOI: 10.1103/PhysRevLett.128.085901  0.756
2021 Tang K, Dong K, Li J, Gordon MP, Reichertz FG, Kim H, Rho Y, Wang Q, Lin CY, Grigoropoulos CP, Javey A, Urban JJ, Yao J, Levinson R, Wu J. Temperature-adaptive radiative coating for all-season household thermal regulation. Science (New York, N.Y.). 374: 1504-1509. PMID 34914515 DOI: 10.1126/science.abf7136  0.768
2021 Dong K, Zhang T, Li J, Wang Q, Yang F, Rho Y, Wang D, Grigoropoulos CP, Wu J, Yao J. Flat Bands in Magic-Angle Bilayer Photonic Crystals at Small Twists. Physical Review Letters. 126: 223601. PMID 34152166 DOI: 10.1103/PhysRevLett.126.223601  0.768
2021 Liu J, Jin L, Allen FI, Gao Y, Ci P, Kang F, Wu J. Selective Gas Permeation in Defect-Engineered Bilayer Graphene. Nano Letters. PMID 33645993 DOI: 10.1021/acs.nanolett.0c04989  0.738
2020 Gao Y, Lin X, Smart T, Ci P, Watanabe K, Taniguchi T, Jeanloz R, Ni J, Wu J. Band Engineering of Large-Twist-Angle Graphene/h-BN Moiré Superlattices with Pressure. Physical Review Letters. 125: 226403. PMID 33315461 DOI: 10.1103/PhysRevLett.125.226403  0.758
2020 Tang K, Dong K, Nicolai CJ, Li Y, Li J, Lou S, Qiu CW, Raulet DH, Yao J, Wu J. Millikelvin-resolved ambient thermography. Science Advances. 6. PMID 33298452 DOI: 10.1126/sciadv.abd8688  0.776
2020 Xu G, Dong K, Li Y, Li H, Liu K, Li L, Wu J, Qiu CW. Tunable analog thermal material. Nature Communications. 11: 6028. PMID 33247120 DOI: 10.1038/s41467-020-19909-0  0.772
2020 Ci P, Tian X, Kang J, Salazar A, Eriguchi K, Warkander S, Tang K, Liu J, Chen Y, Tongay S, Walukiewicz W, Miao J, Dubon O, Wu J. Author Correction: Chemical trends of deep levels in van der Waals semiconductors. Nature Communications. 11: 6180. PMID 33243977 DOI: 10.1038/s41467-020-20151-x  0.764
2020 Ci P, Tian X, Kang J, Salazar A, Eriguchi K, Warkander S, Tang K, Liu J, Chen Y, Tongay S, Walukiewicz W, Miao J, Dubon O, Wu J. Chemical trends of deep levels in van der Waals semiconductors. Nature Communications. 11: 5373. PMID 33097722 DOI: 10.1038/s41467-020-19247-1  0.8
2020 Tang K, Wang X, Dong K, Li Y, Li J, Sun B, Zhang X, Dames C, Qiu C, Yao J, Wu J. A Thermal Radiation Modulation Platform by Emissivity Engineering with Graded Metal-Insulator Transition. Advanced Materials (Deerfield Beach, Fla.). e1907071. PMID 32700403 DOI: 10.1002/Adma.201907071  0.787
2020 Larciprete MC, Centini M, Paoloni S, Fratoddi I, Dereshgi SA, Tang K, Wu J, Aydin K. Adaptive tuning of infrared emission using VO thin films. Scientific Reports. 10: 11544. PMID 32665664 DOI: 10.1038/S41598-020-68334-2  0.323
2020 Ke F, Zhang L, Chen Y, Yin K, Wang C, Tzeng YK, Lin Y, Dong H, Liu Z, Tse JS, Mao WL, Wu J, Chen B. Synthesis of Atomically Thin Hexagonal Diamond with Compression. Nano Letters. PMID 32578991 DOI: 10.1021/Acs.Nanolett.0C01872  0.425
2020 Liu H, Yu X, Wu K, Gao Y, Tongay S, Javey A, Chen L, Hong J, Wu J. Extreme in-plane thermal conductivity anisotropy in titanium trisulfide caused by heat-carrying optical phonons. Nano Letters. PMID 32539416 DOI: 10.1021/Acs.Nanolett.0C01476  0.751
2020 Liu H, Yang C, Wei B, Jin L, Alatas A, Said A, Tongay S, Yang F, Javey A, Hong J, Wu J. Anomalously Suppressed Thermal Conduction by Electron-Phonon Coupling in Charge-Density-Wave Tantalum Disulfide. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 7: 1902071. PMID 32537392 DOI: 10.1002/Advs.201902071  0.601
2019 Lin J, Chen H, Gao Y, Cai Y, Jin J, Etman AS, Kang J, Lei T, Lin Z, Folgueras MC, Quan LN, Kong Q, Sherburne M, Asta M, Sun J, ... ... Wu J, et al. Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite. Proceedings of the National Academy of Sciences of the United States of America. PMID 31685626 DOI: 10.1073/Pnas.1907576116  0.384
2019 Zhang C, Lyu R, Lv W, Li H, Jiang W, Li J, Gu S, Zhou G, Huang Z, Zhang Y, Wu J, Yang QH, Kang F. A Lightweight 3D Cu Nanowire Network with Phosphidation Gradient as Current Collector for High-Density Nucleation and Stable Deposition of Lithium. Advanced Materials (Deerfield Beach, Fla.). e1904991. PMID 31549760 DOI: 10.1002/Adma.201904991  0.302
2019 Choe HS, Prabhakar R, Wehmeyer G, Allen FI, Lee W, Jin L, Li Y, Yang P, Qiu C, Dames C, Scott M, Minor AM, Bahk JH, Wu J. Ion write micro-thermotics: programing thermal metamaterials at the microscale. Nano Letters. PMID 31059272 DOI: 10.1021/Acs.Nanolett.9B00984  0.311
2019 Ke F, Chen Y, Yin K, Yan J, Zhang H, Liu Z, Tse JS, Wu J, Mao HK, Chen B. Large bandgap of pressurized trilayer graphene. Proceedings of the National Academy of Sciences of the United States of America. PMID 31004055 DOI: 10.1073/Pnas.1820890116  0.386
2019 Kocer H, Ozer A, Butun S, Wang K, Wu J, Kurt H, Aydin K. Thermally Tuning Infrared Light Scattering Using Planar Layered Thin Films and Space Gradient Metasurface Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-7. DOI: 10.1109/Jstqe.2019.2900607  0.501
2019 Choe HS, Li J, Zheng W, Lee J, Suh J, Allen FI, Liu H, Choi H, Walukiewicz W, Zheng H, Wu J. Anomalously high electronic thermal conductivity and Lorenz ratio in Bi2Te3 nanoribbons far from the bipolar condition Applied Physics Letters. 114: 152101. DOI: 10.1063/1.5092221  0.666
2019 Lee H, Jeong H, Suh J, Doh WH, Baik J, Shin H, Ko J, Wu J, Kim Y, Park JY. Nanoscale Friction on Confined Water Layers Intercalated between MoS2 Flakes and Silica The Journal of Physical Chemistry C. 123: 8827-8835. DOI: 10.1021/Acs.Jpcc.8B11426  0.651
2019 Zang X, Hohman JN, Yao K, Ci P, Yan A, Wei M, Hayasaka T, Zettl A, Schuck PJ, Wu J, Lin L. Metallo‐Hydrogel‐Assisted Synthesis and Direct Writing of Transition Metal Dichalcogenides Advanced Functional Materials. 29: 1807612. DOI: 10.1002/Adfm.201807612  0.762
2018 Chen Y, Chen C, Kealhofer R, Liu H, Yuan Z, Jiang L, Suh J, Park J, Ko C, Choe HS, Avila J, Zhong M, Wei Z, Li J, Li S, ... ... Wu J, et al. Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy. Advanced Materials (Deerfield Beach, Fla.). e1800754. PMID 29893020 DOI: 10.1002/Adma.201800754  0.691
2018 Dong K, Choe HS, Wang X, Liu H, Saha B, Ko C, Deng Y, Tom KB, Lou S, Wang L, Grigoropoulos CP, You Z, Yao J, Wu J. A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition. Small (Weinheim An Der Bergstrasse, Germany). PMID 29479803 DOI: 10.1002/Smll.201703621  0.775
2018 Wang X, Fan W, Fan Z, Dai W, Zhu K, Hong S, Sun Y, Wu J, Liu K. Substrate modified thermal stability of mono- and few-layer MoS2. Nanoscale. PMID 29410997 DOI: 10.1039/C7Nr08941D  0.484
2018 Wang X, Dong K, Choe HS, Liu H, Lou S, Tom KB, Bechtel HA, You Z, Wu J, Yao J. A multifunctional micro-electro-opto-mechanical platform based on phase-transition materials. Nano Letters. PMID 29400972 DOI: 10.1021/acs.nanolett.7b04477  0.788
2018 Suh J, Tan TL, Zhao W, Park J, Lin DY, Park TE, Kim J, Jin C, Saigal N, Ghosh S, Wong ZM, Chen Y, Wang F, Walukiewicz W, Eda G, ... Wu J, et al. Reconfiguring crystal and electronic structures of MoS2 by substitutional doping. Nature Communications. 9: 199. PMID 29335411 DOI: 10.1038/S41467-017-02631-9  0.703
2018 Liu Z, Banar B, Butun S, Kocer H, Wang K, Scheuer J, Wu J, Aydin K. Dynamic infrared thin-film absorbers with tunable absorption level based on VO2 phase transition Optical Materials Express. 8: 2151. DOI: 10.1364/Ome.8.002151  0.528
2018 Suh J, Sarkar T, Choe HS, Park J, Venkatesan T, Wu J. Compensated thermal conductivity of metallically conductive Ta-doped TiO2 Applied Physics Letters. 113: 022103. DOI: 10.1063/1.5044563  0.703
2018 Kim E, Lee Y, Ko C, Park Y, Yeo J, Chen Y, Choe HS, Allen FI, Rho J, Tongay S, Wu J, Kim K, Grigoropoulos CP. Tuning the optical and electrical properties of MoS2 by selective Ag photo-reduction Applied Physics Letters. 113: 013105. DOI: 10.1063/1.5022705  0.604
2018 Liu K, Lee S, Yang S, Delaire O, Wu J. Recent progresses on physics and applications of vanadium dioxide Materials Today. 21: 875-896. DOI: 10.1016/J.Mattod.2018.03.029  0.44
2018 Song H, Liu J, Liu B, Wu J, Cheng H, Kang F. Two-Dimensional Materials for Thermal Management Applications Joule. 2: 442-463. DOI: 10.1016/J.Joule.2018.01.006  0.338
2018 Dong K, Hong S, Deng Y, Ma H, Li J, Wang X, Yeo J, Wang L, Lou S, Tom KB, Liu K, You Z, Wei Y, Grigoropoulos CP, Yao J, ... Wu J, et al. Reconfigurable Photonic Platforms: A Lithography-Free and Field-Programmable Photonic Metacanvas (Adv. Mater. 5/2018) Advanced Materials. 30: 1870034. DOI: 10.1002/Adma.201870034  0.324
2017 Dong K, Hong S, Deng Y, Ma H, Li J, Wang X, Yeo J, Wang L, Lou S, Tom KB, Liu K, You Z, Wei Y, Grigoropoulos CP, Yao J, ... Wu J, et al. A Lithography-Free and Field-Programmable Photonic Metacanvas. Advanced Materials (Deerfield Beach, Fla.). PMID 29226459 DOI: 10.1002/Adma.201703878  0.784
2017 Choe HS, Suh J, Ko C, Dong K, Lee S, Park J, Lee Y, Wang K, Wu J. Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps. Scientific Reports. 7: 7131. PMID 28769057 DOI: 10.1038/S41598-017-07466-4  0.801
2017 Ci P, Chen Y, Kang J, Suzuki R, Choe HS, Suh J, Ko C, Park T, Shen K, Iwasa Y, Tongay S, Ager JW, Wang LW, Wu J. Quantifying van der Waals Interactions in Layered Transition Metal Dichalcogenides from Pressure-Enhanced Valence Band Splitting. Nano Letters. PMID 28657751 DOI: 10.1021/Acs.Nanolett.7B02159  0.799
2017 Chen Y, Zhang S, Ke F, Ko C, Lee S, Liu K, Chen B, Ager JW, Jeanloz R, Eyert V, Wu J. Pressure-Temperature Phase Diagram of Vanadium Dioxide. Nano Letters. PMID 28266861 DOI: 10.1021/Acs.Nanolett.7B00233  0.67
2017 Lee S, Hippalgaonkar K, Yang F, Hong J, Ko C, Suh J, Liu K, Wang K, Urban JJ, Zhang X, Dames C, Hartnoll SA, Delaire O, Wu J. Anomalously low electronic thermal conductivity in metallic vanadium dioxide. Science (New York, N.Y.). 355: 371-374. PMID 28126811 DOI: 10.1126/Science.Aag0410  0.807
2017 Borys NJ, Barnard ES, Gao S, Yao K, Bao W, Buyanin A, Zhang Y, Tongay S, Ko C, Suh J, Weber-Bargioni A, Wu J, Yang L, Schuck PJ. Anomalous Above-Gap Photoexcitations and Optical Signatures of Localized Charge Puddles in Monolayer Molybdenum Disulfide. Acs Nano. PMID 28117983 DOI: 10.1021/Acsnano.6B08278  0.758
2017 Drapcho SG, Kim J, Hong X, Jin C, Shi S, Tongay S, Wu J, Wang F. Apparent breakdown of Raman selection rule at valley exciton resonances in monolayerMoS2 Physical Review B. 95. DOI: 10.1103/Physrevb.95.165417  0.512
2017 Wehmeyer G, Yabuki T, Monachon C, Wu J, Dames C. Thermal diodes, regulators, and switches: Physical mechanisms and potential applications Applied Physics Reviews. 4: 041304. DOI: 10.1063/1.5001072  0.315
2017 Liu H, Choe HS, Chen Y, Suh J, Ko C, Tongay S, Wu J. Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus Applied Physics Letters. 111: 102101. DOI: 10.1063/1.4985333  0.756
2017 Saha B, Peschot A, Osoba B, Ko C, Rubin L, Liu TK, Wu J. Reducing adhesion energy of micro-relay electrodes by ion beam synthesized oxide nanolayers Apl Materials. 5: 36103-36103. DOI: 10.1063/1.4978436  0.306
2016 Chen Y, Ke F, Ci P, Ko C, Park T, Saremi S, Liu H, Lee Y, Suh J, Martin LW, Ager JW, Chen B, Wu J. Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell. Nano Letters. PMID 27935309 DOI: 10.1021/Acs.Nanolett.6B03785  0.806
2016 Kim J, Khan ME, Ko JH, Kim JH, Lee ES, Suh J, Wu J, Kim YH, Park JY, Lyeo HK. Bimodal Control of Heat Transport at Graphene-Metal Interfaces Using Disorder in Graphene. Scientific Reports. 6: 34428. PMID 27698372 DOI: 10.1038/Srep34428  0.669
2016 Hou J, Wang X, Fu D, Ko C, Chen Y, Sun Y, Lee S, Wang KX, Dong K, Sun Y, Tongay S, Jiao L, Yao J, Liu K, Wu J. Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active Substrates. Small (Weinheim An Der Bergstrasse, Germany). PMID 27335137 DOI: 10.1002/Smll.201601021  0.805
2016 Fonseca JJ, Tongay S, Topsakal M, Chew AR, Lin AJ, Ko C, Luce AV, Salleo A, Wu J, Dubon OD. Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air. Advanced Materials (Deerfield Beach, Fla.). PMID 27171481 DOI: 10.1002/Adma.201601151  0.802
2016 Brotons-Gisbert M, Andres-Penares D, Suh J, Hidalgo F, Abargues R, Rodríguez-Cantó PJ, Segura A, Cros A, Tobias G, Canadell E, Ordejon P, Wu J, Martinez-Pastor JP, Sánchez-Royo JF. Nanotexturing to enhance photoluminescent response of atomically thin Indium Selenide with highly tunable band gap. Nano Letters. PMID 27080194 DOI: 10.1021/Acs.Nanolett.6B00689  0.707
2016 Ko C, Lee Y, Chen Y, Suh J, Fu D, Suslu A, Lee S, Clarkson JD, Choe HS, Tongay S, Ramesh R, Wu J. Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory. Advanced Materials (Deerfield Beach, Fla.). PMID 26894866 DOI: 10.1002/Adma.201504779  0.779
2016 Kim E, Ko C, Kim K, Chen Y, Suh J, Ryu SG, Wu K, Meng X, Suslu A, Tongay S, Wu J, Grigoropoulos CP. Laser-Assisted Doping: Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction (Adv. Mater. 2/2016). Advanced Materials (Deerfield Beach, Fla.). 28: 392. PMID 26749472 DOI: 10.1002/Adma.201670014  0.784
2016 Najmzadeh M, Ko C, Wu K, Tongay S, Wu J. Multilayer ReS2 lateral p-n homojunction for photoemission and photodetection Applied Physics Express. 9. DOI: 10.7567/Apex.9.055201  0.731
2016 Dong K, Lou S, Choe HS, Liu K, You Z, Yao J, Wu J. Stress compensation for arbitrary curvature control in vanadium dioxide phase transition actuators Applied Physics Letters. 109. DOI: 10.1063/1.4958692  0.417
2016 Chen Y, Zhang S, Gao W, Ke F, Yan J, Saha B, Ko C, Suh J, Chen B, Ager JW, Walukiewicz W, Jeanloz R, Wu J. Pressure-induced structural transition of CdxZn1-xO alloys Applied Physics Letters. 108. DOI: 10.1063/1.4947022  0.674
2016 Jin C, Kim J, Suh J, Shi Z, Chen B, Fan X, Kam M, Watanabe K, Taniguchi T, Tongay S, Zettl A, Wu J, Wang F. Interlayer electron–phonon coupling in WSe2/hBN heterostructures Nature Physics. 13: 127-131. DOI: 10.1038/Nphys3928  0.764
2016 Scott M, Suh J, Wu J, Minor AM. Stability Studies of MAPbI 3 : Identification of Degradation Pathways and Strategies for Observing the Native Structure of Lead Halide Perovskites Microscopy and Microanalysis. 22: 1510-1511. DOI: 10.1017/S1431927616008394  0.629
2016 Kim JH, Fu D, Kwon S, Liu K, Wu J, Park JY. Metal-Insulator Transitions: Crossing Thermal Lubricity and Electronic Effects in Friction: Vanadium Dioxide under the Metal-Insulator Transition (Adv. Mater. Interfaces 2/2016) Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201670006  0.697
2016 Kim JH, Fu D, Kwon S, Liu K, Wu J, Park JY. Crossing Thermal Lubricity and Electronic Effects in Friction: Vanadium Dioxide under the Metal-Insulator Transition Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201500388  0.713
2016 Jin C, Kim J, Wu K, Chen B, Barnard ES, Suh J, Shi Z, Drapcho SG, Wu J, Schuck PJ, Tongay S, Wang F. On Optical Dipole Moment and Radiative Recombination Lifetime of Excitons in WSe2 Advanced Functional Materials. 27: 1601741. DOI: 10.1002/Adfm.201601741  0.787
2015 Kim E, Ko C, Kim K, Chen Y, Suh J, Ryu SG, Wu K, Meng X, Suslu A, Tongay S, Wu J, Grigoropoulos CP. Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction. Advanced Materials (Deerfield Beach, Fla.). PMID 26567761 DOI: 10.1002/Adma.201503945  0.786
2015 Lee S, Yang F, Suh J, Yang S, Lee Y, Li G, Sung Choe H, Suslu A, Chen Y, Ko C, Park J, Liu K, Li J, Hippalgaonkar K, Urban JJ, ... ... Wu J, et al. Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K. Nature Communications. 6: 8573. PMID 26472285 DOI: 10.1038/Ncomms9573  0.8
2015 Liu K, Hsin CL, Fu D, Suh J, Tongay S, Chen M, Sun Y, Yan A, Park J, Yu KM, Guo W, Zettl A, Zheng H, Chrzan DC, Wu J. Self-Passivation of Defects: Effects of High-Energy Particle Irradiation on the Elastic Modulus of Multilayer Graphene. Advanced Materials (Deerfield Beach, Fla.). PMID 26437308 DOI: 10.1002/Adma.201501752  0.769
2015 Kocer H, Butun S, Palacios E, Liu Z, Tongay S, Fu D, Wang K, Wu J, Aydin K. Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films. Scientific Reports. 5: 13384. PMID 26294085 DOI: 10.1038/Srep13384  0.771
2015 Bao W, Borys NJ, Ko C, Suh J, Fan W, Thron A, Zhang Y, Buyanin A, Zhang J, Cabrini S, Ashby PD, Weber-Bargioni A, Tongay S, Aloni S, Ogletree DF, ... Wu J, et al. Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide. Nature Communications. 6: 7993. PMID 26269394 DOI: 10.1038/Ncomms8993  0.754
2015 Tosun M, Fu D, Desai SB, Ko C, Seuk Kang J, Lien DH, Najmzadeh M, Tongay S, Wu J, Javey A. MoS2 Heterojunctions by Thickness Modulation. Scientific Reports. 5: 10990. PMID 26121940 DOI: 10.1038/Srep10990  0.745
2015 Suh J, Yu KM, Fu D, Liu X, Yang F, Fan J, Smith DJ, Zhang YH, Furdyna JK, Dames C, Walukiewicz W, Wu J. Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi₂Te₃ by Multifunctionality of Native Defects. Advanced Materials (Deerfield Beach, Fla.). 27: 3681-6. PMID 25974062 DOI: 10.1002/Adma.201501350  0.789
2015 Lee Y, Liu ZQ, Heron JT, Clarkson JD, Hong J, Ko C, Biegalski MD, Aschauer U, Hsu SL, Nowakowski ME, Wu J, Christen HM, Salahuddin S, Bokor JB, Spaldin NA, et al. Large resistivity modulation in mixed-phase metallic systems. Nature Communications. 6: 5959. PMID 25564764 DOI: 10.1038/Ncomms6959  0.371
2015 Liu K, Wu J. Mechanical properties of two-dimensional materials and heterostructures Journal of Materials Research. DOI: 10.1557/Jmr.2015.324  0.425
2015 Fan W, Zhu X, Ke F, Chen Y, Dong K, Ji J, Chen B, Tongay S, Ager JW, Liu K, Su H, Wu J. Vibrational spectrum renormalization by enforced coupling across the van der Waals gap between Mo S 2 and W S 2 monolayers Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.241408  0.569
2015 Latzke DW, Zhang W, Suslu A, Chang TR, Lin H, Jeng HT, Tongay S, Wu J, Bansil A, Lanzara A. Electronic structure, spin-orbit coupling, and interlayer interaction in bulk MoS2 and WS2 Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.235202  0.569
2015 Bai L, Li Q, Corr SA, Meng Y, Park C, Sinogeikin SV, Ko C, Wu J, Shen G. Pressure-induced phase transitions and metallization in VO2 Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.104110  0.357
2015 Park TE, Suh J, Seo D, Park J, Lin DY, Huang YS, Choi HJ, Wu J, Jang C, Chang J. Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition Applied Physics Letters. 107. DOI: 10.1063/1.4936571  0.69
2015 Kocer H, Butun S, Banar B, Wang K, Tongay S, Wu J, Aydin K. Thermal tuning of infrared resonant absorbers based on hybrid gold-VO2 nanostructures Applied Physics Letters. 106. DOI: 10.1063/1.4918938  0.503
2015 Cheng C, Fu D, Liu K, Guo H, Xu S, Ryu SG, Ho O, Zhou J, Fan W, Bao W, Salmeron M, Wang N, Grigoropoulos CP, Wu J. Directly metering light absorption and heat transfer in single nanowires using metal-insulator transition in VO2 Advanced Optical Materials. 3: 336-341. DOI: 10.1002/Adom.201400483  0.763
2014 Suh J, Park TE, Lin DY, Fu D, Park J, Jung HJ, Chen Y, Ko C, Jang C, Sun Y, Sinclair R, Chang J, Tongay S, Wu J. Doping against the native propensity of MoS2: degenerate hole doping by cation substitution. Nano Letters. 14: 6976-82. PMID 25420217 DOI: 10.1021/Nl503251H  0.809
2014 Guo H, Khan MI, Cheng C, Fan W, Dames C, Wu J, Minor AM. Vanadium dioxide nanowire-based microthermometer for quantitative evaluation of electron beam heating. Nature Communications. 5: 4986. PMID 25307160 DOI: 10.1038/Ncomms5986  0.539
2014 Hong X, Kim J, Shi SF, Zhang Y, Jin C, Sun Y, Tongay S, Wu J, Zhang Y, Wang F. Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures. Nature Nanotechnology. 9: 682-6. PMID 25150718 DOI: 10.1038/Nnano.2014.167  0.596
2014 Sun Y, Liu K, Hong X, Chen M, Kim J, Shi S, Wu J, Zettl A, Wang F. Probing local strain at MX(2)-metal boundaries with surface plasmon-enhanced Raman scattering. Nano Letters. 14: 5329-34. PMID 25133959 DOI: 10.1021/Nl5023767  0.448
2014 Liu K, Yan Q, Chen M, Fan W, Sun Y, Suh J, Fu D, Lee S, Zhou J, Tongay S, Ji J, Neaton JB, Wu J. Elastic properties of chemical-vapor-deposited monolayer MoS2, WS2, and their bilayer heterostructures. Nano Letters. 14: 5097-103. PMID 25120033 DOI: 10.1021/Nl501793A  0.788
2014 Zhu J, Hippalgaonkar K, Shen S, Wang K, Abate Y, Lee S, Wu J, Yin X, Majumdar A, Zhang X. Temperature-gated thermal rectifier for active heat flow control. Nano Letters. 14: 4867-72. PMID 25010206 DOI: 10.1021/Nl502261M  0.646
2014 Tongay S, Fan W, Kang J, Park J, Koldemir U, Suh J, Narang DS, Liu K, Ji J, Li J, Sinclair R, Wu J. Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS2 and WS2 monolayers. Nano Letters. 14: 3185-90. PMID 24845201 DOI: 10.1021/Nl500515Q  0.771
2014 Liu K, Cheng C, Suh J, Tang-Kong R, Fu D, Lee S, Zhou J, Chua LO, Wu J. Powerful, multifunctional torsional micromuscles activated by phase transition. Advanced Materials (Deerfield Beach, Fla.). 26: 1746-50. PMID 24765648 DOI: 10.1002/Adma.201304064  0.767
2014 Favaloro T, Suh J, Vermeersch B, Liu K, Gu Y, Chen LQ, Wang KX, Wu J, Shakouri A. Direct observation of nanoscale Peltier and Joule effects at metal-insulator domain walls in vanadium dioxide nanobeams. Nano Letters. 14: 2394-400. PMID 24735496 DOI: 10.1021/Nl500042X  0.751
2014 Tongay S, Sahin H, Ko C, Luce A, Fan W, Liu K, Zhou J, Huang YS, Ho CH, Yan J, Ogletree DF, Aloni S, Ji J, Li S, Li J, ... ... Wu J, et al. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling. Nature Communications. 5: 3252. PMID 24500082 DOI: 10.1038/Ncomms4252  0.79
2014 Kumar PV, Bardhan NM, Tongay S, Wu J, Belcher AM, Grossman JC. Scalable enhancement of graphene oxide properties by thermally driven phase transformation. Nature Chemistry. 6: 151-8. PMID 24451592 DOI: 10.1038/Nchem.1820  0.591
2014 Suh J, Fu D, Liu X, Furdyna JK, Yu KM, Walukiewicz W, Wu J. Fermi-level stabilization in the topological insulators Bi 2 Se 3 and Bi 2 Te 3: Origin of the surface electron gas Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.115307  0.79
2014 Tongay S, Narang DS, Kang J, Fan W, Ko C, Luce AV, Wang KX, Suh J, Patel KD, Pathak VM, Li J, Wu J. Two-dimensional semiconductor alloys: Monolayer Mo1-xW xSe2 Applied Physics Letters. 104. DOI: 10.1063/1.4834358  0.756
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2005 Li S, Yu K, Jones R, Wu J, Walukiewicz W, Ager J, Shan W, Haller E, Lu H, Schaff WJ, Kemp W. Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN Mrs Proceedings. 864. DOI: 10.1557/Proc-864-E7.10  0.483
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2005 Li SX, Haller EE, Yu KM, Walukiewicz W, Ager JW, Wu J, Shan W, Lu H, Schaff WJ. Effect of native defects on optical properties of InxGa1−xN alloys Applied Physics Letters. 87: 161905. DOI: 10.1063/1.2108118  0.637
2005 Johnson MC, Liliental-Weber Z, Zakharov DN, Mccready DE, Jorgenson RJ, Wu J, Shan W, Bourret-Courchesne ED. Investigation of microstructure and V-defect formation in InxGa1-xN/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition Journal of Electronic Materials. 34: 605-611. DOI: 10.1007/S11664-005-0072-Y  0.372
2004 Shan W, Walukiewicz W, Yu KM, Ager JW, Wu J, Beeman J, Scapulla MA, Dubon OD, Haller EE, Nabetani Y, Becla P. Effect of oxygen on the electronic band structure of II-O-VI alloys Proceedings of Spie - the International Society For Optical Engineering. 5349: 426-434. DOI: 10.1117/12.529297  0.622
2004 Wu J, Walukiewicz W, Shan W, Bourret-Courchesne E, Ager JW, Yu KM, Haller EE, Kissell K, Bachilo SM, Weisman RB, Smalley RE. Structure-dependent hydrostatic deformation potentials of individual single-walled carbon nanotubes Physical Review Letters. 93: 017404-1. DOI: 10.1103/Physrevlett.93.017404  0.446
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2004 Yu KM, Walukiewicz W, Shan W, Wu J, Beeman JW, Scarpulla MA, Dubon OD, Becla P. Synthesis and optical properties of II-O-VI highly mismatched alloys Journal of Applied Physics. 95: 6232-6238. DOI: 10.1063/1.1713021  0.553
2004 Wu J, Walukiewicz W, Li SX, Armitage R, Ho JC, Weber ER, Haller EE, Lu H, Schaff WJ, Barcz A, Jakiela R. Effects of electron concentration on the optical absorption edge of InN Applied Physics Letters. 84: 2805-2807. DOI: 10.1063/1.1704853  0.64
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2004 Shan W, Yu KM, Walukiewicz W, Beeman JW, Wu J, Ager JW, Scarpulla MA, Dubon OD, Haller EE. Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloys Applied Physics Letters. 84: 924-926. DOI: 10.1063/1.1646457  0.668
2004 Shan W, Walukiewicz W, Ager JW, Yu KM, Wu J, Haller EE. Pressure dependence of the fundamental band-gap energy of CdSe Applied Physics Letters. 84: 67-69. DOI: 10.1063/1.1638879  0.334
2004 Wu J, Han W, Walukiewicz W, Ager JW, Shan W, Haller EE, Zettl A. Raman Spectroscopy and Time-Resolved Photoluminescence of BN and BxCyNzNanotubes Nano Letters. 4: 647-650. DOI: 10.1021/Nl049862E  0.469
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2004 Shan W, Wu J, Walukiewicz W, Ager JW, Yu KM, Haller EE, Kissell K, Bachilo SM, Weisman RB, Smalley RE. Pressure dependence of optical transitions in semiconducting single-walled carbon nanotubes Physica Status Solidi (B) Basic Research. 241: 3367-3373. DOI: 10.1002/Pssb.200405250  0.486
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2004 Shan W, Walukiewicz W, Wu J, Yu KM, Ager JW, Siebentritt S, Rega N. Pressure‐dependent photoluminescence study of CuGaSe2 Physica Status Solidi B-Basic Solid State Physics. 241: 3117-3122. DOI: 10.1002/Pssb.200405223  0.318
2004 Shan W, Walukiewicz W, Ager III JW, Yu KM, Wu J, Haller EE, Nabetani Y. Oxygen induced band-gap reduction in ZnOxSe1−x alloys Physica Status Solidi (B). 241: 603-606. DOI: 10.1002/Pssb.200304168  0.515
2004 Yu KM, Walukiewicz W, Wu J, Shan W, Scarpulla MA, Dubon OD, Beeman JW, Becla P. Diluted ZnMnTe oxide: A multi-band semiconductor for high efficiency solar cells Physica Status Solidi (B) Basic Research. 241: 660-663. DOI: 10.1002/Pssb.200304167  0.611
2003 Yu KM, Walukiewicz W, Wu J, Shan W, Beeman JW, Scarpulla MA, Dubon OD, Becla P. Diluted II-VI oxide semiconductors with multiple band gaps. Physical Review Letters. 91: 246403. PMID 14683137 DOI: 10.1103/Physrevlett.91.246403  0.601
2003 Li SX, Wu J, Walukiewicz W, Shan W, Haller EE, Lu H, Schaff WJ. Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y12.9  0.464
2003 Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Miotkowski I, Ramdas AK, Su C, Sou IK, Perera RCC, Denlinger JD. Origin of the large band-gap bowing in highly mismatched semiconductor alloys Physical Review B. 67. DOI: 10.1103/Physrevb.67.035207  0.501
2003 Li SX, Wu J, Haller EE, Walukiewicz W, Shan W, Lu H, Schaff WJ. Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys Applied Physics Letters. 83: 4963-4965. DOI: 10.1063/1.1633681  0.606
2003 Wu J, Walukiewicz W, Yu KM, Shan W, Ager JW, Haller EE, Lu H, Schaff WJ, Metzger WK, Kurtz S. Superior radiation resistance of In 1-xGa xN alloys: Full-solar-spectrum photovoltaic material system Journal of Applied Physics. 94: 6477-6482. DOI: 10.1063/1.1618353  0.448
2003 Wu J, Walukiewicz W, Shan W, Yu KM, Ager JW, Li SX, Haller EE, Lu H, Schaff WJ. Temperature dependence of the fundamental band gap of InN Journal of Applied Physics. 94: 4457-4460. DOI: 10.1063/1.1605815  0.663
2003 Lu H, Schaff WJ, Eastman LF, Wu J, Walukiewicz W, Cimalla V, Ambacher O. Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy Applied Physics Letters. 83: 1136-1138. DOI: 10.1063/1.1599634  0.338
2003 Shan W, Walukiewicz W, Ager JW, Yu KM, Wu J, Haller EE, Nabetani Y, Mukawa T, Ito Y, Matsumoto T. Effect of oxygen on the electronic band structure in ZnOxSe1−x alloys Applied Physics Letters. 83: 299-301. DOI: 10.1063/1.1592885  0.374
2003 Yu KM, Walukiewicz W, Scarpulla MA, Dubon OD, Wu J, Jasinski J, Liliental-Weber Z, Beeman JW, Pillai MR, Aziz MJ. Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs Journal of Applied Physics. 94: 1043-1049. DOI: 10.1063/1.1582393  0.573
2003 Ng HT, Chen B, Li J, Han J, Meyyappan M, Wu J, Li SX, Haller EE. Optical properties of single-crystalline ZnO nanowires on m-sapphire Applied Physics Letters. 82: 2023-2025. DOI: 10.1063/1.1564870  0.538
2003 Shan W, Walukiewicz W, Wu J, Yu KM, Ager JW, Li SX, Haller EE, Geisz JF, Friedman DJ, Kurtz SR. Band-gap bowing effects in BxGa1−xAs alloys Journal of Applied Physics. 93: 2696-2699. DOI: 10.1063/1.1540230  0.512
2003 Wu J, Walukiewicz W, Yu K, Ager J, Li S, Haller E, Lu H, Schaff WJ. Universal bandgap bowing in group-III nitride alloys Solid State Communications. 127: 411-414. DOI: 10.1016/S0038-1098(03)00457-5  0.625
2003 Wu J, Walukiewicz W. Band gaps of InN and group III nitride alloys Superlattices and Microstructures. 34: 63-75. DOI: 10.1016/J.Spmi.2004.03.069  0.335
2003 Wu J, Walukiewicz W, Yu KM, Ager III JW, Haller EE, Lu H, Schaff WJ. Narrow bandgap group III-nitride alloys Physica Status Solidi (B). 240: 412-416. DOI: 10.1002/Pssb.200303475  0.483
2002 Yu KM, Walukiewicz W, Wu J, Mars DE, Chamberlin DR, Scarpulla MA, Dubon OD, Geisz JF. Mutual passivation of electrically active and isovalent impurities. Nature Materials. 1: 185-9. PMID 12618808 DOI: 10.1038/Nmat754  0.764
2002 Wu J. Band anticrossing effects in highly mismatched semiconductor alloys Lawrence Berkeley National Laboratory. DOI: 10.2172/806122  0.41
2002 Lu H, Schaff WJ, Eastman LF, Wu J, Walukiewicz W, Look DC, Molnar RJ. Growth of thick InN by molecular beam epitaxy Materials Research Society Symposium - Proceedings. 743: 317-322. DOI: 10.1557/Proc-743-L4.10  0.328
2002 Wu J, Walukiewicz W, Shan W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ. Effects of the narrow band gap on the properties of InN Physical Review B. 66. DOI: 10.1103/Physrevb.66.201403  0.503
2002 Wu J, Walukiewicz W, Haller EE. Band structure of highly mismatched semiconductor alloys: Coherent potential approximation Physical Review B. 65. DOI: 10.1103/Physrevb.65.233210  0.498
2002 Wu J, Shan W, Walukiewicz W. Band anticrossing in highly mismatched III-V semiconductor alloys Semiconductor Science and Technology. 17: 860-869. DOI: 10.1088/0268-1242/17/8/315  0.363
2002 Hwang J, Schaff WJ, Eastman LF, Bradley ST, Brillson LJ, Look DC, Wu J, Walukiewicz W, Furis M, Cartwright AN. Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy Applied Physics Letters. 81: 5192-5194. DOI: 10.1063/1.1534395  0.332
2002 Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ. Small band gap bowing in In1-xGaxN alloys Applied Physics Letters. 80: 4741-4743. DOI: 10.1063/1.1489481  0.511
2002 Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ, Saito Y, Nanishi Y. Unusual properties of the fundamental band gap of InN Applied Physics Letters. 80: 3967-3969. DOI: 10.1063/1.1482786  0.508
2002 Wu J, Walukiewicz W, Yu KM, Ager JW, Shan W, Haller EE, Miotkowski I, Ramdas AK, Miotkowska S. Band anticrossing effects in MgyZn1−yTe1−xSex alloys Applied Physics Letters. 80: 34-36. DOI: 10.1063/1.1430853  0.506
2002 Yu KM, Wu J, Walukiewicz W, Beeman JW, Ager JW, Haller EE, Miotkowski I, Ramdas A. Band anticrossing in highly mismatched group II-VI semiconductor alloys Journal of Electronic Materials. 31: 754-758. DOI: 10.1007/S11664-002-0232-2  0.44
2001 Wu J, Shan W, Walukiewicz W, Yu KM, Ager JW, Haller EE, Xin HP, Tu CW. Effect of band anticrossing on the optical transitions inGaAs1−xNx/GaAsmultiple quantum wells Physical Review B. 64. DOI: 10.1103/Physrevb.64.085320  0.488
2001 Yu KM, Walukiewicz W, Wu J, Beeman JW, Ager JW, Haller EE, Shan W, Xin HP, Tu CW, Ridgway MC. Formation of diluted III–V nitride thin films by N ion implantation Journal of Applied Physics. 90: 2227-2234. DOI: 10.1063/1.1388860  0.429
2001 Wu J, Walukiewicz W, Haller EE. Calculation of the ground state of shallow donors in GaAs1-xNx Journal of Applied Physics. 89: 789-791. DOI: 10.1063/1.1324999  0.467
2000 Yu KM, Walukiewicz W, Shan W, Wu J, Beeman JW, Ager JW, Haller EE, Ridgway MC. Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation Mrs Proceedings. 650. DOI: 10.1557/Proc-650-R8.3/O13.3  0.444
2000 Yu KM, Walukiewicz W, Shan W, Ager JW, Wu J, Haller EE, Geisz JF, Friedman DJ, Olson JM. Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys Physical Review B. 61: R13337-R13340. DOI: 10.1103/Physrevb.61.R13337  0.496
2000 Yu KM, Walukiewicz W, Shan W, Wu J, Beeman JW, Ager JW, Haller EE. Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs Applied Physics Letters. 77: 3607-3609. DOI: 10.1063/1.1328766  0.506
2000 Shan W, Walukiewicz W, Yu KM, Wu J, Ager JW, Haller EE, Xin HP, Tu CW. Nature of the fundamental band gap in GaNxP1−x alloys Applied Physics Letters. 76: 3251-3253. DOI: 10.1063/1.126597  0.376
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