Year |
Citation |
Score |
2009 |
Jones RE, Li SX, Yu KM, Ager JW, Haller EE, Walukiewicz W, Lu H, Schaff WJ. Properties of native point defects in In1-xAlxN alloys Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/9/095406 |
0.598 |
|
2007 |
Hsu L, Jones RE, Li SX, Yu KM, Walukiewicz W. Electron mobility in InN and III-N alloys Journal of Applied Physics. 102. DOI: 10.1063/1.2785005 |
0.441 |
|
2007 |
Jones R, Li S, Haller E, Genuchten vHE, Yu K, Ager J, Liliental-Weber Z, Walukiewicz W, Lu HH, Schaff W. High Electron Mobility InN Applied Physics Letters. 90: 162103. DOI: 10.1063/1.2722693 |
0.526 |
|
2007 |
Ager JW, Jones RE, Yamaguchi DM, Yu KM, Walukiewicz W, Li SX, Haller EE, Lu H, Schaff WJ. p-type InN and In-rich InGaN Physica Status Solidi (B). 244: 1820-1824. DOI: 10.1002/Pssb.200674762 |
0.454 |
|
2006 |
Jones RE, Yu KM, Li SX, Walukiewicz W, Ager JW, Haller EE, Lu H, Schaff WJ. Evidence for p-type doping of InN. Physical Review Letters. 96: 125505. PMID 16605926 DOI: 10.1103/Physrevlett.96.125505 |
0.471 |
|
2006 |
Walukiewicz W, Ager JW, Yu KM, Liliental-Weber Z, Wu J, Li SX, Jones RE, Denlinger JD. Structure and electronic properties of InN and In-rich group III-nitride alloys Journal of Physics D. 39. DOI: 10.1088/0022-3727/39/5/R01 |
0.668 |
|
2006 |
Yu KM, Walukiewicz W, Ager JW, Bour D, Farshchi R, Dubon OD, Li SX, Sharp ID, Haller EE. Multiband GaNAsP quaternary alloys Applied Physics Letters. 88. DOI: 10.1063/1.2181627 |
0.672 |
|
2006 |
Jones RE, Li SX, Hsu L, Yu KM, Walukiewicz W, Liliental-Weber Z, Ager JW, Haller EE, Lu H, Schaff WJ. Native-defect-controlled n-type conductivity in InN Physica B-Condensed Matter. 376: 436-439. DOI: 10.1016/J.Physb.2005.12.112 |
0.543 |
|
2006 |
Li SX, Yu KM, Wu J, Jones RE, Walukiewicz W, Ager JW, Shan W, Haller EE, Lu H, Schaff WJ. Native defects in InxGa1−xN alloys Physica B-Condensed Matter. 376: 432-435. DOI: 10.1016/J.Physb.2005.12.111 |
0.676 |
|
2006 |
Walukiewicz W, Jones R, Li S, Yu K, Ager J, Haller E, Lu H, Schaff W. Dopants and defects in InN and InGaN alloys Journal of Crystal Growth. 288: 278-282. DOI: 10.1016/J.Jcrysgro.2005.12.082 |
0.629 |
|
2005 |
Jones RE, van Genuchten HCM, Li SX, Hsu L, Yu KM, Walukiewicz W, Ager III JW, Haller EE, Lu H, Schaff WJ. Electron Transport Properties of InN Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff06-06 |
0.543 |
|
2005 |
Ager JW, Walukiewicz W, Shan W, Yu KM, Li SX, Haller EE, Lu H, Schaff WJ. Multiphonon resonance Raman scattering inInxGa1−xN Physical Review B. 72. DOI: 10.1103/Physrevb.72.155204 |
0.444 |
|
2005 |
Li SX, Yu KM, Wu J, Jones RE, Walukiewicz W, Ager JW, Shan W, Haller EE, Lu H, Schaff WJ. Fermi-level stabilization energy in group III nitrides Physical Review B. 71. DOI: 10.1103/Physrevb.71.161201 |
0.653 |
|
2005 |
Li SX, Haller EE, Yu KM, Walukiewicz W, Ager JW, Wu J, Shan W, Lu H, Schaff WJ. Effect of native defects on optical properties of InxGa1−xN alloys Applied Physics Letters. 87: 161905. DOI: 10.1063/1.2108118 |
0.676 |
|
2005 |
Yu KM, Liliental-Weber Z, Walukiewicz W, Shan W, Ager JW, Li SX, Jones RE, Haller EE, Lu H, Schaff WJ. On the crystalline structure, stoichiometry and band gap of InN thin films Applied Physics Letters. 86: 71910. DOI: 10.1063/1.1861513 |
0.512 |
|
2004 |
Wu J, Walukiewicz W, Li SX, Armitage R, Ho JC, Weber ER, Haller EE, Lu H, Schaff WJ, Barcz A, Jakiela R. Effects of electron concentration on the optical absorption edge of InN Applied Physics Letters. 84: 2805-2807. DOI: 10.1063/1.1704853 |
0.664 |
|
2004 |
Walukiewicz W, Li S, Wu J, Yu K, Ager J, Haller E, Lu H, Schaff WJ. Optical properties and electronic structure of InN and In-rich group III-nitride alloys Journal of Crystal Growth. 269: 119-127. DOI: 10.1016/J.Jcrysgro.2004.05.041 |
0.697 |
|
2004 |
Li SX, Wu J, Walukiewicz W, Shan W, Haller EE, Lu H, Schaff WJ, Saito Y, Nanishi Y. Effects of hydrostatic pressure on optical properties of InN and In-rich group III-nitride alloys Physica Status Solidi (B). 241: 3107-3112. DOI: 10.1002/Pssb.200405232 |
0.67 |
|
2003 |
Li SX, Wu J, Haller EE, Walukiewicz W, Shan W, Lu H, Schaff WJ. Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys Applied Physics Letters. 83: 4963-4965. DOI: 10.1063/1.1633681 |
0.611 |
|
2003 |
Wu J, Walukiewicz W, Shan W, Yu KM, Ager JW, Li SX, Haller EE, Lu H, Schaff WJ. Temperature dependence of the fundamental band gap of InN Journal of Applied Physics. 94: 4457-4460. DOI: 10.1063/1.1605815 |
0.662 |
|
2003 |
Wu J, Walukiewicz W, Yu K, Ager J, Li S, Haller E, Lu H, Schaff WJ. Universal bandgap bowing in group-III nitride alloys Solid State Communications. 127: 411-414. DOI: 10.1016/S0038-1098(03)00457-5 |
0.661 |
|
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