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Samantha C. Cruz, Ph.D. - Publications

Affiliations: 
2013 Materials Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Farrell RM, Al-Heji AA, Neufeld CJ, Chen X, Iza M, Cruz SC, Keller S, Nakamura S, DenBaars SP, Mishra UK, Speck JS. Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells Applied Physics Letters. 103. DOI: 10.1063/1.4844955  0.582
2012 Hu YL, Farrell RM, Neufeld CJ, Iza M, Cruz SC, Pfaff N, Simeonov D, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells Applied Physics Letters. 100. DOI: 10.1063/1.4704189  0.561
2011 Neufeld CJ, Cruz SC, Farrell RM, Iza M, Keller S, Nakamura S, Denbaars SP, Speck JS, Mishra UK. Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells Applied Physics Letters. 99. DOI: 10.1063/1.3624850  0.609
2011 Neufeld CJ, Cruz SC, Farrell RM, Iza M, Lang JR, Keller S, Nakamura S, Denbaars SP, Speck JS, Mishra UK. Effect of doping and polarization on carrier collection in InGaN quantum well solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3595487  0.488
2011 Farrell RM, Neufeld CJ, Cruz SC, Lang JR, Iza M, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm Applied Physics Letters. 98. DOI: 10.1063/1.3591976  0.575
2011 Lang JR, Neufeld CJ, Hurni CA, Cruz SC, Matioli E, Mishra UK, Speck JS. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3 -based molecular beam epitaxy Applied Physics Letters. 98. DOI: 10.1063/1.3575563  0.563
2011 Matioli E, Neufeld C, Iza M, Cruz SC, Al-Heji AA, Chen X, Farrell RM, Keller S, DenBaars S, Mishra U, Nakamura S, Speck J, Weisbuch C. High internal and external quantum efficiency InGaN/GaN solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3540501  0.632
2009 Masui H, Asamizu H, Melo T, Yamada H, Iso K, Cruz SC, Nakamura S, DenBaars SP. Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0  \bar1  0) and semipolar (1 1  \bar{2}  2) orientations Journal of Physics D: Applied Physics. 42: 135106. DOI: 10.1088/0022-3727/42/13/135106  0.614
2009 Cruz SC, Keller S, Mates TE, Mishra UK, DenBaars SP. Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 311: 3817-3823. DOI: 10.1016/J.Jcrysgro.2009.02.051  0.383
2009 Masui H, Cruz SC, Nakamura S, DenBaars SP. Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures Journal of Electronic Materials. 38: 756-760. DOI: 10.1007/S11664-009-0777-4  0.555
2008 Neufeld CJ, Toledo NG, Cruz SC, Iza M, DenBaars SP, Mishra UK. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap Applied Physics Letters. 93. DOI: 10.1063/1.2988894  0.555
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