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Nikholas G. Toledo, Ph.D. - Publications

Affiliations: 
2012 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Kim J, Toledo NG, Lal S, Lu J, Buehl TE, Mishra UK. Wafer-bonded p-n heterojunction of GaAs and chemomechanically polished N-polar GaN Ieee Electron Device Letters. 34: 42-44. DOI: 10.1109/Led.2012.2225137  0.598
2012 Toledo NG, Mishra UK. InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices Journal of Applied Physics. 111. DOI: 10.1063/1.4723831  0.626
2012 Toledo NG, Friedman DJ, Farrell RM, Perl EE, Lin CT, Bowers JE, Speck JS, Mishra UK. Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices Journal of Applied Physics. 111. DOI: 10.1063/1.3690907  0.664
2011 Toledo NG, Cruz SC, Neufeld CJ, Lang JR, Scarpulla MA, Buehl T, Gossard AC, Denbaars SP, Speck JS, Mishra UK. Integrated non-III-nitride/III-nitride tandem solar cell Device Research Conference - Conference Digest, Drc. 265-266. DOI: 10.1109/DRC.2011.5994525  0.647
2010 Neufeld CJ, Chen Z, Cruz SC, Toledo NG, Denbaars SP, Mishra UK. Optimization of the p-GaN window layer for InGaN/GaN solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2089-2092. DOI: 10.1109/PVSC.2010.5616061  0.652
2009 Neufeld CJ, Cruz SC, Toledo NG, Iza M, DenBaars SP, Mishra UK. Optical and thermal properties of In.12Ga.88N/GaN solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 001533-001535. DOI: 10.1109/PVSC.2009.5411356  0.637
2008 Neufeld CJ, Toledo NG, Cruz SC, Iza M, DenBaars SP, Mishra UK. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap Applied Physics Letters. 93. DOI: 10.1063/1.2988894  0.671
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