☰

Yun Wei, Ph.D. - Publications

Affiliations: 
2003 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
Tree Info Similar researchers PubMed Report error

8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2004 Wei Y, Scott DW, Dong Y, Gossard AC, Rodwell MJ. A 160-GHz fT and 140-GHz fMAX submicrometer InP DHBT in MBE regrown-emitter technology Ieee Electron Device Letters. 25: 232-234. DOI: 10.1109/Led.2004.826521  0.575
2004 Dong Y, Wei Y, Griffith Z, Urteaga M, Dahlström M, Rodwell MJW. InP heterojunction bipolar transistor with a selectively implanted collector Solid-State Electronics. 48: 1699-1702. DOI: 10.1016/J.Sse.2003.12.042  0.691
2004 Scott DW, Kadow C, Dong Y, Wei Y, Gossard AC, Rodwell MJW. Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy Journal of Crystal Growth. 267: 35-41. DOI: 10.1016/J.Jcrysgro.2004.03.049  0.491
2003 Urteaga M, Scott D, Krishnan S, Wei Y, Dahlström M, Griffith Z, Parthasarathy N, Rodwell MJW. G-Band (140-220-GHz) InP-Based HBT Amplifiers Ieee Journal of Solid-State Circuits. 38: 1451-1456. DOI: 10.1109/Jssc.2003.815906  0.678
2003 Dong Y, Scott DW, Wei Y, Gossard AC, Rodwell MJ. Low-resistance p-type polycrystalline GaSb grown by molecular beam epitaxy Journal of Crystal Growth. 256: 223-229. DOI: 10.1016/S0022-0248(03)01346-0  0.609
2001 Jaganathan S, Krishnan S, Mensa D, Mathew T, Betser Y, Wei Y, Scott D, Urteaga M, Rodwell M. An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology Ieee Journal of Solid-State Circuits. 36: 1343-1350. DOI: 10.1109/4.944661  0.706
2001 Lee S, Kim H, Urteaga M, Krishnan S, Wei Y, Dahlstrǒm M, Rodwell M. Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax = 425 GHz Electronics Letters. 37: 1096. DOI: 10.1049/El:20010728  0.714
2000 Krishnan S, Mensa D, Guthrie J, Jaganathan S, Mathew T, Girish R, Wei Y, Rodwell MJW. Broadband lumped HBT amplifiers Electronics Letters. 36: 466-467. DOI: 10.1049/El:20000355  0.714
Show low-probability matches.