Year |
Citation |
Score |
2004 |
Wei Y, Scott DW, Dong Y, Gossard AC, Rodwell MJ. A 160-GHz fT and 140-GHz fMAX submicrometer InP DHBT in MBE regrown-emitter technology Ieee Electron Device Letters. 25: 232-234. DOI: 10.1109/Led.2004.826521 |
0.575 |
|
2004 |
Dong Y, Wei Y, Griffith Z, Urteaga M, Dahlström M, Rodwell MJW. InP heterojunction bipolar transistor with a selectively implanted collector Solid-State Electronics. 48: 1699-1702. DOI: 10.1016/J.Sse.2003.12.042 |
0.691 |
|
2004 |
Scott DW, Kadow C, Dong Y, Wei Y, Gossard AC, Rodwell MJW. Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy Journal of Crystal Growth. 267: 35-41. DOI: 10.1016/J.Jcrysgro.2004.03.049 |
0.491 |
|
2003 |
Urteaga M, Scott D, Krishnan S, Wei Y, Dahlström M, Griffith Z, Parthasarathy N, Rodwell MJW. G-Band (140-220-GHz) InP-Based HBT Amplifiers Ieee Journal of Solid-State Circuits. 38: 1451-1456. DOI: 10.1109/Jssc.2003.815906 |
0.678 |
|
2003 |
Dong Y, Scott DW, Wei Y, Gossard AC, Rodwell MJ. Low-resistance p-type polycrystalline GaSb grown by molecular beam epitaxy Journal of Crystal Growth. 256: 223-229. DOI: 10.1016/S0022-0248(03)01346-0 |
0.609 |
|
2001 |
Jaganathan S, Krishnan S, Mensa D, Mathew T, Betser Y, Wei Y, Scott D, Urteaga M, Rodwell M. An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology Ieee Journal of Solid-State Circuits. 36: 1343-1350. DOI: 10.1109/4.944661 |
0.706 |
|
2001 |
Lee S, Kim H, Urteaga M, Krishnan S, Wei Y, Dahlstrǒm M, Rodwell M. Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax = 425 GHz Electronics Letters. 37: 1096. DOI: 10.1049/El:20010728 |
0.714 |
|
2000 |
Krishnan S, Mensa D, Guthrie J, Jaganathan S, Mathew T, Girish R, Wei Y, Rodwell MJW. Broadband lumped HBT amplifiers Electronics Letters. 36: 466-467. DOI: 10.1049/El:20000355 |
0.714 |
|
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