| Year |
Citation |
Score |
| 2013 |
Lobisser E, Rode JC, Jain V, Chiang HW, Baraskar A, Mitchell WJ, Thibeault BJ, Rodwell MJW, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu AWK. InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 769-772. DOI: 10.1002/Pssc.201200674 |
0.701 |
|
| 2011 |
Jain V, Lobisser E, Baraskar A, Thibeault BJ, Rodwell MJW, Griffith Z, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu WK. InGaAs/InP DHBTs in a dry-etched refractory metal emitter process demonstrating simultaneous fτ/fmax ∼430/800GHz Ieee Electron Device Letters. 32: 24-26. DOI: 10.1109/Led.2010.2084069 |
0.721 |
|
| 2011 |
Urteaga M, Pierson R, Rowell P, Jain V, Lobisser E, Rodwell MJW. 130nm InP DHBTs with ft >0.52THz and fmax >1.1THz Device Research Conference - Conference Digest, Drc. 281-282. DOI: 10.1109/DRC.2011.5994532 |
0.412 |
|
| 2011 |
Jain V, Rode JC, Chiang HW, Baraskar A, Lobisser E, Thibeault BJ, Rodwell M, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu WK. 1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance Device Research Conference - Conference Digest, Drc. 271-272. DOI: 10.1109/DRC.2011.5994528 |
0.796 |
|
| 2011 |
Carter AD, Law JJM, Lobisser E, Burek GJ, Mitchell WJ, Thibeault BJ, Gossard AC, Rodwell MJW. 60 nm gate length Al2O3 / In0.53Ga 0.47As gate-first MOSFETs using InAs raised source-drain regrowth Device Research Conference - Conference Digest, Drc. 19-20. DOI: 10.1109/DRC.2011.5994402 |
0.418 |
|
| 2011 |
Urteaga M, Seo M, Hacker J, Griffith Z, Young A, Pierson R, Rowell P, Skalare A, Jain V, Lobisser E, Rodwell MJW. InP HBTs for THz frequency integrated circuits Conference Proceedings - International Conference On Indium Phosphide and Related Materials. |
0.627 |
|
| 2011 |
Jain V, Lobisser E, Baraskar A, Thibeault BJ, Rodwell MJW, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu WK. InGaAs/InP DHBTs demonstrating simultaneous f τ/f max ∼ 460/850 GHz in a refractory emitter process Conference Proceedings - International Conference On Indium Phosphide and Related Materials. |
0.778 |
|
| 2010 |
Baraskar A, Wistey MA, Jain V, Lobisser E, Singisetti U, Burek G, Lee YJ, Thibeault B, Gossard A, Rodwell M. Ex situ Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C5l7-C5l9. DOI: 10.1116/1.3454372 |
0.703 |
|
| 2010 |
Jain V, Lobisser E, Baraskar A, Thibeault BJ, Rodwell M, Griffith Z, Urteaga M, Bartsch ST, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu WK. High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology Device Research Conference - Conference Digest, Drc. 153-154. DOI: 10.1109/DRC.2010.5551887 |
0.79 |
|
| 2009 |
Jain V, Baraskar AK, Wistey MA, Singisetti U, Griffith Z, Lobisser E, Thibeault BJ, Gossard AC, Rodwell MJW. Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 358-361. DOI: 10.1109/ICIPRM.2009.5012438 |
0.723 |
|
| 2009 |
Lobisser E, Griffith Z, Jain V, Thibeault BJ, Rodwell MJW, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu AWK. 200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating fmax > 800 GHz and fτ = 360 ghz Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 16-19. DOI: 10.1109/ICIPRM.2009.5012408 |
0.743 |
|
| 2008 |
Rodwell M, Lobisser E, Wistey M, Jain V, Baraskar A, Lind E, Koo J, Griffith Z, Hacker J, Urteaga M, Mensa D, Pierson R, Brar B. THz bipolar transistor circuits: Technical feasibility, technology development, integrated circuit results 2008 Ieee Csic Symposium: Gaas Ics Celebrate 30 Years in Monterey, Technical Digest 2008. DOI: 10.1109/CSICS.2008.5 |
0.756 |
|
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