Alan Carter Seabaugh - Publications

Affiliations: 
Electrical Engineering University of Notre Dame, Notre Dame, IN, United States 
Area:
Nanoelectronics
Website:
https://engineering.nd.edu/profiles/aseabaugh

154 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any innacuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Seabaugh A, Fathipour S, Li W, Lu H, Park JH, Kummel AC, Jena D, Fullerton-Shirey SK, Fay P. Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels Technical Digest - International Electron Devices Meeting, Iedm. 2016: 35.6.1-35.6.4. DOI: 10.1109/IEDM.2015.7409835  0.64
2015 Xu H, Fathipour S, Kinder EW, Seabaugh AC, Fullerton-Shirey SK. Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte. Acs Nano. 9: 4900-10. PMID 25877681 DOI: 10.1021/nn506521p  0.64
2015 Li HM, Lee D, Qu D, Liu X, Ryu J, Seabaugh A, Yoo WJ. Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide. Nature Communications. 6: 6564. PMID 25800613 DOI: 10.1038/ncomms7564  0.64
2015 Jiang Z, Lu Y, Tan Y, He Y, Povolotskyi M, Kubis T, Seabaugh AC, Fay P, Klimeck G. Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction Ieee Transactions On Electron Devices. 62: 2445-2449. DOI: 10.1109/TED.2015.2443564  0.64
2015 Jena D, Li M, Ma N, Hwang WS, Esseni D, Seabaugh A, Xing HG. Electron transport in 2D crystal semiconductors and their device applications 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348543  0.64
2015 Li W, Sharmin S, Ilatikhameneh H, Rahman R, Lu Y, Wang J, Yan X, Seabaugh A, Klimeck G, Jena D, Fay P. Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 28-34. DOI: 10.1109/JXCDC.2015.2426433  0.64
2015 Esseni D, Ionescu AM, Seabaugh A, Yeo YC. Foreword special issue on transistors with steep subthreshold swing for low-power electronics Ieee Journal of the Electron Devices Society. 3: 86-87. DOI: 10.1109/JEDS.2015.2418911  0.64
2015 Fathipour S, Park JH, Kummel A, Seabaugh A. Low-leakage WSe2 FET gate-stack using titanyl phthalocyanine seeding layer for atomic layer deposition of Al2O3 Device Research Conference - Conference Digest, Drc. 2015: 213-214. DOI: 10.1109/DRC.2015.7175641  0.64
2015 Xu K, Chu T, Bourdon B, Seabaugh A, Chen Z, Fullerton-Shirey S. Reconfigurable p-n junction formation and bandgap opening in bilayer graphene using polyethylene oxide and CsClO4 solid polymer electrolyte Device Research Conference - Conference Digest, Drc. 2015: 173-174. DOI: 10.1109/DRC.2015.7175612  0.64
2015 Fathipour S, Remskar M, Varlec A, Ajoy A, Yan R, Vishwanath S, Rouvimov S, Hwang WS, Xing HG, Jena D, Seabaugh A. Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors Applied Physics Letters. 106. DOI: 10.1063/1.4906066  0.64
2015 Hwang WS, Zhao P, Tahy K, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Robinson JA, Haensch W, Xing H, Seabaugh A, Jena D. Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates Apl Materials. 3. DOI: 10.1063/1.4905155  0.64
2015 Wang WH, Gong C, Wang W, Fullerton-Shirey SK, Seabaugh A, Cho K. First-Principles Study of Crown Ether and Crown Ether-Li Complex Interactions with Graphene Journal of Physical Chemistry C. 119: 20016-20022. DOI: 10.1021/acs.jpcc.5b07049  0.64
2015 Lu H, Kwak I, Park JH, Oneill K, Furuyama T, Kobayashi N, Seabaugh A, Kummel A, Fullerton-Shirey SK. Solution-Cast Monolayers of Cobalt Crown Ether Phthalocyanine on Highly Ordered Pyrolytic Graphite Journal of Physical Chemistry C. 119: 21992-22000. DOI: 10.1021/acs.jpcc.5b05233  0.64
2015 Seabaugh A, Jiang Z, Klimeck G. Tunnel transistors Cmos and Beyond: Logic Switches For Terascale Integrated Circuits. 117-143. DOI: 10.1017/CBO9781107337886.009  0.64
2015 Lu H, Esseni D, Seabaugh A. Universal analytic model for tunnel FET circuit simulation Solid-State Electronics. 108: 110-117. DOI: 10.1016/j.sse.2014.12.002  0.64
2014 Fiori G, Bonaccorso F, Iannaccone G, Palacios T, Neumaier D, Seabaugh A, Banerjee SK, Colombo L. Electronics based on two-dimensional materials. Nature Nanotechnology. 9: 768-79. PMID 25286272 DOI: 10.1038/nnano.2014.207  0.64
2014 Hwang WS, Tahy K, Zhao P, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Kurt Gaskill D, Xing H, Seabaugh A, Jena D. Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4861379  0.64
2014 Lu H, Kim JW, Esseni D, Seabaugh A. Continuous semiempirical model for the current-voltage characteristics of tunnel FETs Ulis 2014 - 2014 15th International Conference On Ultimate Integration On Silicon. 25-28. DOI: 10.1109/ULIS.2014.6813897  0.64
2014 Zhang Q, Lu Y, Richter CA, Jena D, Seabaugh A. Optimum bandgap and supply voltage in tunnel FETs Ieee Transactions On Electron Devices. 61: 2719-2724. DOI: 10.1109/TED.2014.2330805  0.64
2014 Lu H, Seabaugh A. Tunnel field-effect transistors: State-of-the-art Ieee Journal of the Electron Devices Society. 2: 44-49. DOI: 10.1109/JEDS.2014.2326622  0.64
2014 Seabaugh A, Lu H. Tunnel field-effect transistors - Update Proceedings - 2014 Ieee 12th International Conference On Solid-State and Integrated Circuit Technology, Icsict 2014. DOI: 10.1109/ICSICT.2014.7021205  0.64
2014 Xiao S, Li M, Seabaugh A, Jena D, Xing HG. Vertical heterojunction of MoS2 and WSe2 Device Research Conference - Conference Digest, Drc. 169-170. DOI: 10.1109/DRC.2014.6872351  0.64
2014 Fathipour S, Xu H, Kinder E, Fullerton-Shirey S, Seabaugh A. Investigation of aging and restoration of polyethylene-oxide cesium-perchlorate solid polymer electrolyte used for ion doping of a WSe 2 field-effect transistor Device Research Conference - Conference Digest, Drc. 125-126. DOI: 10.1109/DRC.2014.6872329  0.64
2014 Fathipour S, Ma N, Hwang WS, Protasenko V, Vishwanath S, Xing HG, Xu H, Jena D, Appenzeller J, Seabaugh A. Exfoliated multilayer MoTe2 field-effect transistors Applied Physics Letters. 105. DOI: 10.1063/1.4901527  0.64
2014 Hwang WS, Verma A, Peelaers H, Protasenko V, Rouvimov S, Xing H, Seabaugh A, Haensch W, De Walle CV, Galazka Z, Albrecht M, Fornari R, Jena D. High-voltage field effect transistors with wide-bandgap β -Ga 2O3 nanomembranes Applied Physics Letters. 104. DOI: 10.1063/1.4879800  0.64
2013 Xu K, Zeng C, Zhang Q, Yan R, Ye P, Wang K, Seabaugh AC, Xing HG, Suehle JS, Richter CA, Gundlach DJ, Nguyen NV. Direct measurement of Dirac point energy at the graphene/oxide interface. Nano Letters. 13: 131-6. PMID 23244683 DOI: 10.1021/nl303669w  0.64
2013 Seabaugh A. The tunneling transistor Ieee Spectrum. 50: 34-62. DOI: 10.1109/MSPEC.2013.6607013  0.64
2013 Zhao P, Hwang WS, Kim ES, Feenstra R, Gu G, Kang J, Banerjee K, Seabaugh A, Xing G, Jena D. Novel logic devices based on 2D crystal semiconductors: Opportunities and challenges Technical Digest - International Electron Devices Meeting, Iedm. 19.1.1-19.1.4. DOI: 10.1109/IEDM.2013.6724657  0.64
2013 Hwang WS, Verma A, Protasenko V, Rouvimov S, Xing HG, Seabaugh A, Haensch W, Van De Walle C, Galazka Z, Albrecht M, Forrnari R, Jena D. Nanomembrane β-Ga2O3 high-voltage field effect transistors Device Research Conference - Conference Digest, Drc. 207-208. DOI: 10.1109/DRC.2013.6633866  0.64
2013 Fathipour S, Hwang WS, Kosel T, Xing HG, Haensch W, Jena D, Seabaugh A. Exfoliated MoTe2 field-effect transistor Device Research Conference - Conference Digest, Drc. 115-116. DOI: 10.1109/DRC.2013.6633820  0.64
2013 Yan R, Zhang Q, Kirillov OA, Li W, Basham J, Boosalis A, Liang X, Jena D, Richter CA, Seabaugh AC, Gundlach DJ, Xing HG, Nguyen NV. Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide Applied Physics Letters. 102. DOI: 10.1063/1.4796169  0.64
2013 Hwang WS, Remskar M, Yan R, Kosel T, Kyung Park J, Jin Cho B, Haensch W, Xing H, Seabaugh A, Jena D. Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors Applied Physics Letters. 102. DOI: 10.1063/1.4789975  0.64
2013 Zhang Q, Li R, Yan R, Kosel T, Xing HG, Seabaugh AC, Xu K, Kirillov OA, Gundlach DJ, Richter CA, Nguyen NV. A unique photoemission method to measure semiconductor heterojunction band offsets Applied Physics Letters. 102. DOI: 10.1063/1.4772979  0.64
2012 Hwang WS, Tahy K, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Xing H, Seabaugh A, Jena D. Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3693593  0.64
2012 Karda K, Sutar S, Brockman JB, Nahas JJ, Seabaugh A. Bistable-body tunnel SRAM Ieee Transactions On Nanotechnology. 11: 1067-1072. DOI: 10.1109/TNANO.2010.2053555  0.64
2012 Senale-Rodriguez B, Yeqing Lu, Fay P, Jena D, Seabaugh A, Xing HG, Barboni L, Silveira F. Perspectives of TFETs for low power analog ICs 2012 Ieee Subthreshold Microelectronics Conference, Subvt 2012. DOI: 10.1109/SubVT.2012.6404307  0.64
2012 Zhou G, Lu Y, Li R, Zhang Q, Liu Q, Vasen T, Zhu H, Kuo JM, Kosel T, Wistey M, Fay P, Seabaugh A, Xing H. InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and I ON/I OFF ratio near 10 6 Ieee Electron Device Letters. 33: 782-784. DOI: 10.1109/LED.2012.2189546  0.64
2012 Lu Y, Zhou G, Li R, Liu Q, Zhang Q, Vasen T, Chae SD, Kosel T, Wistey M, Xing H, Seabaugh A, Fay P. Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Ieee Electron Device Letters. 33: 655-657. DOI: 10.1109/LED.2012.2186554  0.64
2012 Li R, Lu Y, Zhou G, Liu Q, Chae SD, Vasen T, Hwang WS, Zhang Q, Fay P, Kosel T, Wistey M, Xing H, Seabaugh A. AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v Ieee Electron Device Letters. 33: 363-365. DOI: 10.1109/LED.2011.2179915  0.64
2012 Zhou G, Li R, Vasen T, Qi M, Chae S, Lu Y, Zhang Q, Zhu H, Kuo JM, Kosel T, Wistey M, Fay P, Seabaugh A, Xing H. Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μa/μm at VDS = 0.5 v Technical Digest - International Electron Devices Meeting, Iedm. 32.6.1-32.6.4. DOI: 10.1109/IEDM.2012.6479154  0.64
2012 Hwang WS, Remskar M, Yan R, Protasenko V, Tahy K, Chae SD, Xing H, Seabaugh A, Jena D. First demonstration of two-dimensional WS 2 transistors exhibiting 10 5 room temperature modulation and ambipolar behavior Device Research Conference - Conference Digest, Drc. 187-188. DOI: 10.1109/DRC.2012.6257042  0.64
2012 Yan R, Zhang Q, Li W, Calizo I, Shen T, Richter CA, Hight-Walker AR, Liang X, Seabaugh A, Jena D, Grace Xing H, Gundlach DJ, Nguyen NV. Determination of graphene work function and graphene-insulator- semiconductor band alignment by internal photoemission spectroscopy Applied Physics Letters. 101. DOI: 10.1063/1.4734955  0.64
2012 Sik Hwang W, Remskar M, Yan R, Protasenko V, Tahy K, Doo Chae S, Zhao P, Konar A, Xing H, Seabaugh A, Jena D. Transistors with chemically synthesized layered semiconductor WS 2 exhibiting 10 5 room temperature modulation and ambipolar behavior Applied Physics Letters. 101. DOI: 10.1063/1.4732522  0.64
2012 Hwang WS, Tahy K, Li X, Xing H, Seabaugh AC, Sung CY, Jena D. Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene Applied Physics Letters. 100. DOI: 10.1063/1.4716983  0.64
2012 Zhang Q, Zhou G, Xing HG, Seabaugh AC, Xu K, Sio H, Kirillov OA, Richter CA, Nguyen NV. Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy Applied Physics Letters. 100. DOI: 10.1063/1.3692589  0.64
2012 Do NST, Schaetzl DM, Dey B, Seabaugh AC, Fullerton-Shirey SK. Influence of Fe 2O 3 nanofiller shape on the conductivity and thermal properties of solid polymer electrolytes: Nanorods versus nanospheres Journal of Physical Chemistry C. 116: 21216-21223. DOI: 10.1021/jp3059454  0.64
2012 Liu Q, Dong L, Liu Y, Gordon R, Ye PD, Fay P, Seabaugh A. Frequency response of LaAlO 3/SrTiO 3 all-oxide field-effect transistors Solid-State Electronics. 76: 1-4. DOI: 10.1016/j.sse.2012.05.044  0.64
2012 Li R, Lu Y, Chae SD, Zhou G, Liu Q, Chen C, Shahriar Rahman M, Vasen T, Zhang Q, Fay P, Kosel T, Wistey M, Xing HG, Koswatta S, Seabaugh A. InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 389-392. DOI: 10.1002/pssc.201100241  0.64
2011 Seabaugh A, Chae SD, Fay P, Hwang WS, Kosel T, Li R, Liu Q, Lu Y, Vasen T, Wistey M, Xing H, Zhou G, Zhang Q. III-V tunnel field-effect transistors Ecs Transactions. 41: 227-229. DOI: 10.1149/1.3633302  0.64
2011 Zhou G, Lu Y, Li R, Zhang Q, Hwang WS, Liu Q, Vasen T, Chen C, Zhu H, Kuo JM, Koswatta S, Kosel T, Wistey M, Fay P, Seabaugh A, et al. Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate Ieee Electron Device Letters. 32: 1516-1518. DOI: 10.1109/LED.2011.2164232  0.64
2011 Zhang Q, Zhou G, Xing HG, Seabaugh AC, Xu K, Kirillov OA, Richter CA, Nguyen NV. Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135253  0.64
2011 Seabaugh A. Fundamentals and current status of steep-slope tunnel field-effect transistors European Solid-State Circuits Conference. 59-60. DOI: 10.1109/ESSCIRC.2011.6044914  0.64
2011 Zhou G, Lu Y, Li R, Zhang Q, Hwang W, Liu Q, Vasen T, Zhu H, Kuo J, Koswatta S, Kosel T, Wistey M, Fay P, Seabaugh A, Xing H. Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs Device Research Conference - Conference Digest, Drc. 205-206. DOI: 10.1109/DRC.2011.5994499  0.64
2011 Tahy K, Hwang WS, Tedesco JL, Myers-Ward RL, Campbell PM, Eddy CR, Gaskill DK, Xing H, Seabaugh A, Jena D. Sub-10 nm epitaxial graphene nanoribbon FETs Device Research Conference - Conference Digest, Drc. 39-40. DOI: 10.1109/DRC.2011.5994411  0.64
2011 Remskar M, Mrzel A, Virsek M, Godec M, Krause M, Kolitsch A, Singh A, Seabaugh A. The MoS 2 Nanotubes with Defect-Controlled Electric Properties Nanoscale Research Letters. 6: 1-6. DOI: 10.1007/s11671-010-9765-0  0.64
2011 Zhou G, Lu Y, Li R, Hwang W, Zhang Q, Liu Q, Vasen T, Chen C, Zhu H, Kuo J, Koswatta S, Kosel T, Wistey M, Fay P, Seabaugh A, et al. Self-aligned In0.53Ga0.47As/InAs/InP vertical tunnel FETs 2011 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2011 0.64
2010 Sutar S, Zhang Q, Seabaugh A. InAlAs/InGaAs interband tunnel diodes for SRAM Ieee Transactions On Electron Devices. 57: 2587-2593. DOI: 10.1109/TED.2010.2059611  0.64
2010 Seabaugh AC, Zhang Q. Low-voltage tunnel transistors for beyond CMOS logic Proceedings of the Ieee. 98: 2095-2110. DOI: 10.1109/JPROC.2010.2070470  0.64
2010 Bernstein K, Cavin RK, Porod W, Seabaugh A, Welser J. Device and architecture outlook for beyond CMOS switches Proceedings of the Ieee. 98: 2169-2184. DOI: 10.1109/JPROC.2010.2066530  0.64
2010 Lu Y, Seabaugh A, Fay P, Koester SJ, Laux SE, Haensch TW, Koswatta SO. Geometry dependent tunnel FET performance - Dilemma of electrostatics vs. quantum confinement Device Research Conference - Conference Digest, Drc. 17-18. DOI: 10.1109/DRC.2010.5551905  0.64
2010 Seabaugh A. Tunnel field-effect transistors - Status and prospects Device Research Conference - Conference Digest, Drc. 11-14. DOI: 10.1109/DRC.2010.5551883  0.64
2009 Wheeler D, Kabeer S, Lu Y, Vasen T, Zhang Q, Zhou G, Clark K, Zhu H, Kao YC, Fay P, Kosel T, Xing H, Seabaugh A. Fabrication approach for lateral InGaAs tunnel transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378160  0.64
2009 Zhou G, Kabeer S, Wheeler D, Seabaugh A, Xing H. Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378147  0.64
2009 Kabeer S, Vasen T, Wheeler D, Zhang Q, Koswatta S, Zhu H, Clark K, Kuo JM, Kao YC, Corcoran S, Doyle B, Fay P, Kosel T, Xing H, Seabaugh A. Effect of dopant profile on current-voltage characteristics of p+n+ In 0.53Ga0.47As tunnel junctions 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378127  0.64
2009 Karda K, Brockman J, Sutar S, Seabaugh A, Nahas J. One-transistor bistable-body tunnel SRAM 2009 Ieee International Conference On Integrated Circuit Design and Technology, Icicdt 2009. 233-236. DOI: 10.1109/ICICDT.2009.5166303  0.64
2009 Zhang Q, Sutar S, Kosel T, Seabaugh A. Fully-depleted Ge interband tunnel transistor: Modeling and junction formation Solid-State Electronics. 53: 30-35. DOI: 10.1016/j.sse.2008.09.010  0.64
2009 Wheeler D, Wernersson LE, Fröberg L, Thelander C, Mikkelsen A, Weststrate KJ, Sonnet A, Vogel EM, Seabaugh A. Deposition of HfO2 on InAs by atomic-layer deposition Microelectronic Engineering. 86: 1561-1563. DOI: 10.1016/j.mee.2009.03.091  0.64
2008 Zhang Q, Fang T, Xing H, Seabaugh A, Jena D. Graphene nanoribbon tunnel transistors Ieee Electron Device Letters. 29: 1344-1346. DOI: 10.1109/LED.2008.2005650  0.64
2008 Rommel SL, Pawlik D, Thomas P, Barth M, Johnson K, Kurinec SK, Seabaugh A, Cheng Z, Li JZ, Park JS, Hydrick JM, Bai J, Carroll M, Fiorenza JG, Lochtefeld A. Record PVCR GaAs-based tunn el diodes fabricated on si sub strates using aspect ratio trapping Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796801  0.64
2008 Zhang Q, Seabaugh A. Can the interband tunnel FET outperform Si CMOS? Device Research Conference - Conference Digest, Drc. 73-74. DOI: 10.1109/DRC.2008.4800740  0.64
2008 Sutar S, Zhang Q, Seabaugh A. Structural sensitivity of interband tunnel diodes for SRAM Device Research Conference - Conference Digest, Drc. 65-66. DOI: 10.1109/DRC.2008.4800736  0.64
2008 Caroff P, Jeppsson M, Wheeler D, Keplinger M, Mandl B, Stangl J, Seabaugh A, Bauer G, Wernersson LE. InAs film grown on Si(111) by metalorganic Vapor Phase Epitaxy Journal of Physics: Conference Series. 100. DOI: 10.1088/1742-6596/100/4/042017  0.64
2008 Jha S, Song X, Babcock SE, Kuech TF, Wheeler D, Wu B, Fay P, Seabaugh A. Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy Journal of Crystal Growth. 310: 4772-4775. DOI: 10.1016/j.jcrysgro.2008.07.048  0.64
2007 Zhao J, Seabaugh AC, Kosel TH. Rapid melt growth of germanium tunnel junctions Journal of the Electrochemical Society. 154: H536-H539. DOI: 10.1149/1.2728734  0.64
2007 Yoon I, Yi C, Kim T, Brown AS, Seabaugh A. Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and Si O2 substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 945-947. DOI: 10.1116/1.2739568  0.64
2007 Rácz Z, Seabaugh A. Characterization and control of unconfined lateral diffusion under stencil masks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 857-861. DOI: 10.1116/1.2737437  0.64
2007 Zhang Q, Sutar S, Kosel T, Seabaugh A. Rapid melt growth of Ge tunnel junctions for interband tunnel transistors 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422291  0.64
2007 Wheeler D, Seabaugh A, Froberg L, Thelander C, Wernersson LE. Electrical properties of HfO2/InAs MOS capacitors 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422244  0.64
2007 Wu B, Wheeler D, Yi C, Yoon I, Jha S, Brown A, Kuech T, Fay P, Seabaugh A. InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422233  0.64
2007 Remškar M, Kovac J, Viršek M, Mrak M, Jesih A, Seabaugh A. W5O14 nanowires Advanced Functional Materials. 17: 1974-1978. DOI: 10.1002/adfm.200601150  0.64
2006 Zhang Q, Zhao W, Seabaugh A. Low-subthreshold-swing tunnel transistors Ieee Electron Device Letters. 27: 297-300. DOI: 10.1109/LED.2006.871855  0.64
2006 Zhao W, Seabaugh A, Winstead B, Jovanovic D, Adams V. Influence of uniaxial tensile strain on the performance of partially depleted SOI CMOS ring oscillators Ieee Electron Device Letters. 27: 52-54. DOI: 10.1109/LED.2005.861022  0.64
2005 Wernersson LE, Kabeer S, Zela V, Lind E, Zhang J, Seifert W, Kosel TH, Seabaugh A. A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation Ieee Transactions On Nanotechnology. 4: 594-597. DOI: 10.1109/TNANO.2005.851426  0.64
2005 Liu Q, Seabaugh A. Design approach using tunnel diodes for lowering power in differential comparators Ieee Transactions On Circuits and Systems Ii: Express Briefs. 52: 572-575. DOI: 10.1109/TCSII.2005.850519  0.64
2005 Zhao W, Seabaugh A, Adams V, Jovanovic D, Winstead B. Opposing dependence of the electron and hole gate currents in SOI MOSFETs under uniaxial strain Ieee Electron Device Letters. 26: 410-412. DOI: 10.1109/LED.2004.848118  0.64
2005 Zhao W, Seabaugh A, Winstead B, Jovanovic D, Adams V. Impact of uniaxial strain on the gate leakage currents of PD-SOI MOSFETs and ring oscillators with ultra-thin gate dielectric Device Research Conference - Conference Digest, Drc. 2005: 199-200. DOI: 10.1109/DRC.2005.1553119  0.64
2005 Qin Z, Wei Z, Seabaugh A. Analytic expression and approach for low subthreshold-swing tunnel transistors Device Research Conference - Conference Digest, Drc. 2005: 161-162. DOI: 10.1109/DRC.2005.1553102  0.64
2004 Liu Q, Sutar S, Seabaugh A. Tunnel diode/transistor differential comparator International Journal of High Speed Electronics and Systems. 14: 640-645. DOI: 10.1142/S0129156404002600  0.64
2004 Liu Q, Seabaugh A, Chahal P, Morris FJ. Unified AC model for the resonant tunneling diode Ieee Transactions On Electron Devices. 51: 653-657. DOI: 10.1109/TED.2004.825795  0.64
2004 Zhao W, He J, Belford RE, Wernersson LE, Seabaugh A. Partially Depleted SOI MOSFETs Under Uniaxial Tensile Strain Ieee Transactions On Electron Devices. 51: 317-323. DOI: 10.1109/TED.2003.823048  0.64
2004 Yan Y, Zhao J, Liu Q, Zhao W, Seabaugh A. Vertical tunnel diodes on high resistivity silicon Device Research Conference - Conference Digest, Drc. 27-28. DOI: 10.1109/DRC.2004.1367766  0.64
2004 Wernersson LE, Kabeer S, Zela V, Lind E, Zhang J, Seifert W, Kosel T, Seabaugh A. SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion Electronics Letters. 40: 83-85. DOI: 10.1049/el:20040048  0.64
2004 Racz Z, He J, Srinivasan S, Zhao W, Seabaugh A, Han K, Ruchhoeft P, Wolfe J. Nanofabrication using nanotranslated stencil masks and lift off Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 74-76.  0.64
2003 Wang J, Wheeler D, Yan Y, Zhao J, Howard S, Seabaugh A. Silicon tunnel diodes formed by proximity rapid thermal diffusion Ieee Electron Device Letters. 24: 93-95. DOI: 10.1109/LED.2002.807706  0.64
2003 Wernersson LE, Kabeer S, Zela V, Lind E, Zhao J, Yan Y, Seifert W, Seabaugh A. A combined UHV-CVD and rapid thermal diffusion process for SiGe esaki diodes by ultra shallow junction formation 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 164-165. DOI: 10.1109/ISDRS.2003.1272043  0.64
2002 Belford RE, Zhao W, Potashnik J, Liu Q, Seabaugh A. Performance-augmented CMOS using back-end uniaxial strain Device Research Conference - Conference Digest, Drc. 2002: 41-42. DOI: 10.1109/DRC.2002.1029496  0.64
2001 Jackson EM, Weaver BD, Shojah-Ardalan S, Wilkins R, Seabaugh AC, Brar B. Irradiation effects in InGaAs/InAlAs high electron mobility transistors Applied Physics Letters. 79: 2279-2281. DOI: 10.1063/1.1408904  0.64
2000 Dashiell MW, Troeger RT, Rommel SL, Adam TN, Berger PR, Guedj C, Kolodzey J, Seabaugh AC, Lake R. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing Ieee Transactions On Electron Devices. 47: 1707-1714. DOI: 10.1109/16.861581  0.64
2000 Thompson PE, Hobart KD, Twigg ME, Rommel SL, Jin N, Berger PR, Lake R, Seabaugh AC, Chi PH, Simons DS. Epitaxial Si-based tunnel diodes Thin Solid Films. 380: 145-150. DOI: 10.1016/S0040-6090(00)01490-5  0.64
2000 Weaver BD, Jackson EM, Summers GP, Seabaugh AC. Disorder effects in reduced dimension: Indium-phosphide-based resonant tunneling diodes Journal of Applied Physics. 88: 6951-6953.  0.64
2000 Weaver BD, Jackson EM, Seabaugh AC, Van Der Wagt P. MeV ion-induced suppression of resonance current in InP-based resonant tunneling diodes Applied Physics Letters. 76: 2562-2564.  0.64
2000 Seabaugh AC. Tunnel diode integrated circuits Proceedings - Ieee International Symposium On Circuits and Systems. 1: I-273.  0.64
1999 Rommel SL, Dillon TE, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC. Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities Ieee Electron Device Letters. 20: 329-331. DOI: 10.1109/55.772366  0.64
1999 Van Paul Der Wagt J, Tang H, Broekaert TPE, Seabaugh AC, Kao YC. Multibit resonant tunneling diode SRAM Cell Based on Slew-Rate Addressing Ieee Transactions On Electron Devices. 46: 55-62. DOI: 10.1109/16.737441  0.64
1999 Wilkins R, Shojah-Ardalan S, Kirk WP, Spencer GF, Bate RT, Seabaugh AC, Lake R. Lonization and displacement damage irradiation studies of quantum devices: Resonant tunneling diodes and two-dimensional electron gas transistors Ieee Transactions On Nuclear Science. 46: 1702-1707.  0.64
1999 Broekaert TPE, Brar B, Morris F, Seabaugh AC, Frazier G. Resonant tunneling technology for mixed signal and digital circuits in the 10-100 GHz domain Proceedings of the Ieee Great Lakes Symposium On Vlsi. 123-126.  0.64
1999 Thompson PE, Hobart KD, Twigg ME, Jernigan GG, Dillon TE, Rommel SL, Berger PR, Simons DS, Chi PH, Lake R, Seabaugh AC. Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy Applied Physics Letters. 75: 1308-1310.  0.64
1999 Jackson EM, Weaver BD, Seabaugh AC, Van Der Wagt JPA, Beam EA. Proton-induced disorder in InP-based resonant tunneling diodes Applied Physics Letters. 75: 280-282.  0.64
1998 Van Der Wagt JPA, Seabaugh AC, Beam EA. RTD/HFET low standby power SRAM gain cell Ieee Electron Device Letters. 19: 7-9. DOI: 10.1109/55.650335  0.64
1998 Broekaert TPE, Brar B, Van Der Wagt JPA, Seabaugh AC, Morris FJ, Moise TS, Beam EA, Frazier GA. A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter Ieee Journal of Solid-State Circuits. 33: 1342-1348. DOI: 10.1109/4.711333  0.64
1998 Rommel SL, Dillon TE, Dashiell MW, Feng H, Kolodzey J, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC, Klimeck G, Blanks DK. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes Applied Physics Letters. 73: 2191-2193. DOI: 10.1063/1.122419  0.64
1997 Broekaert TPE, Brar B, van der Wagt JPA, Seabaugh AC, Moise TS, Morris FJ, Beam EA, Frazier GA. Monolithic 4 Bit 2 GSps resonant tunneling analog-to-digital converter Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). [d]187-190.  0.64
1997 Brar B, Broekaert TPE, van der Wagt JPA, Seabaugh AC, Moise TS, Morris FJ, Beam EA, Frazier GA. 3 GHz resonant tunneling clocked comparator Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 28-34.  0.64
1997 Wei Y, Wallace RM, Seabaugh AC. Controlled growth of SiO2 tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodes Journal of Applied Physics. 81: 6415-6424.  0.64
1997 Clark KP, Kirk WP, Seabaugh AC. Nonparabolicity effects in the bipolar quantum-well resonant-tunneling transistor Physical Review B - Condensed Matter and Materials Physics. 55: 7068-7072.  0.64
1996 Beam EA, Brar B, Broekaert TPE, Chau HF, Liu W, Seabaugh AC. Gas-source molecular beam epitaxy of electronic devices Materials Research Society Symposium - Proceedings. 421: 3-13.  0.64
1996 Randall JN, Broekaert TPE, Smith BD, Beamlll EA, Seabaugh AC, Jovanovic D. Fabrication of lateral resonant tunneling devices with heterostructure barriers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 4038-4041.  0.64
1996 Brar B, Wilk GD, Seabaugh AC. Direct extraction of the electron tunneling effective mass in ultrathin SiO2 Applied Physics Letters. 69: 2728-2730.  0.64
1996 Broekaert TPE, Randall JN, Beam EA, Jovanovic D, Seabaugh AC, Smith BD. Functional InP/InGaAs lateral double barrier heterostructure resonant tunneling diodes by using etch and regrowth Applied Physics Letters. 69: 1918-1920.  0.64
1996 Wei Y, Wallace RM, Seabaugh AC. Void formation on ultrathin thermal silicon oxide films on the Si(100) surface Applied Physics Letters. 69: 1270-1272.  0.64
1996 Clark KP, Kirk WP, Seabaugh AC, Kao YC. Minority carrier magneto-osculations in the bipolar quantum we resonant tunneling transistor Journal of Applied Physics. 79: 2732-2737.  0.64
1995 Huber JL, Kramer TA, Reed MA, Moise TS, Kao YC, Seabaugh AC, Frensley WR, Fernando CL. Resonant tunneling in tunneling hot-electron transfer amplifier (THETA) structures Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 483-489.  0.64
1995 Clark KP, Bate RT, Kirk WP, Seabaugh AC, Kao YC. Magneto-oscillations in the bipolar quantum-well resonant tunneling transistor Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 475-482.  0.64
1995 Taylor MD, Wetsel GC, McBride SE, Brown RC, Frensley WR, Seabaugh AC, Kao YC, Beam EA. Nanoprobe-induced electrostatic lateral quantization in near-surface resonant-tunneling heterostructures Applied Physics Letters. 66: 3612.  0.64
1994 Moise TS, Kao YC, Seabaugh AC. Improved Turn-On Characteristics of a Hot Electron Transistor at 300 K Ieee Electron Device Letters. 15: 409-411. DOI: 10.1109/55.320984  0.64
1994 Moise TS, Kao YC, Seabaugh AC, Taddiken AH. Integration of Resonant-Tunneling Transistors and Hot-Electron Transistors Ieee Electron Device Letters. 15: 254-256. DOI: 10.1109/55.294087  0.64
1994 Moise TS, Kao YC, Seabaugh AC. Room-temperature operation of a tunneling hot-electron transfer amplifier Applied Physics Letters. 64: 1138-1140. DOI: 10.1063/1.110831  0.64
1994 Beam EA, Chau HF, Henderson TS, Liu W, Seabaugh AC. The use of organometallic group-V sources for the metalorganic molecular beam epitaxy growth of In0.48Ga0.52P/GaAs and In0.53Ga0.47As/InP heterojunction bipolar device structures Journal of Crystal Growth. 136: 1-10. DOI: 10.1016/0022-0248(94)90376-X  0.64
1994 Moise TS, Kao YC, Seabaugh AC, Taddiken AH. Co-integration of resonant-tunneling and single-barrier hot-electron transistors operating at 300 K Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 583-586.  0.64
1993 Seabaugh AC, Beam EA, Taddiken AH, Randall JN, Kao YC. Co-Integration of Resonant Tunneling and Double Heterojunction Bipolar Transistors on InP Ieee Electron Device Letters. 14: 472-474. DOI: 10.1109/55.244734  0.64
1993 Moise TS, Seabaugh AC, Beam EA, Randall JN. Room-Temperature Operation of a Resonant-Tunneling Hot-Electron Transistor Based Integrated Circuit Ieee Electron Device Letters. 14: 441-443. DOI: 10.1109/55.244713  0.64
1993 Moise TS, Seabaugh AC, Beam EA, Kao YC, Randall JN. VB-2 Room-Temperature Operation of InGaAs-Based Hot-Electron Transistors Ieee Transactions On Electron Devices. 40: 2134. DOI: 10.1109/16.239817  0.64
1993 Seabaugh AC, Luscombe JH, Randall JN, Colter PC, Dip A, Eldallal GM, Bedair SM. Atomic layer epitaxy for resonant tunneling devices Thin Solid Films. 225: 99-104. DOI: 10.1016/0040-6090(93)90135-C  0.64
1993 Seabaugh AC, Taddiken AH, Beam EA, Randall JN, Kao YC, Newell B. Co-integrated resonant tunneling and heterojunction bipolar transistor full adder Technical Digest - International Electron Devices Meeting. 419-422.  0.64
1993 Seabaugh AC, Taddiken AH, Beam EA, Randall JN, Kao YC, Newell B. Room-temperature resonant tunnelling bipolar transistor XNOR and XOR integrated circuits Electronics Letters. 29: 1802-1803.  0.64
1992 Seabaugh AC, Kao YC, Yuan HT. Nine-State Resonant Tunneling Diode Memory Ieee Electron Device Letters. 13: 479-481. DOI: 10.1109/55.192801  0.64
1992 Beam EA, Henderson TS, Seabaugh AC, Yang JY. The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In0.53Ga0.47As/InP and In0.48Ga0.52P/GaAs materials systems Journal of Crystal Growth. 116: 436-446. DOI: 10.1016/0022-0248(92)90653-Z  0.64
1991 Seabaugh AC, Kao YC, Frensley WR, Randall JN, Reed MA. Resonant transmission in the base/collector junction of a bipolar quantum-well resonant-tunneling transistor Applied Physics Letters. 59: 3413-3415. DOI: 10.1063/1.105692  0.64
1991 Seabaugh AC, Kao YC, Liu HY, Luscombe JH, Tsai HL, Reed MA, Frensley WR. Formation of rotation-induced superlattices and their observation by tunneling spectroscopy Applied Physics Letters. 59: 570-572. DOI: 10.1063/1.105389  0.64
1991 Seabaugh AC, Randall JN, Kao YC, Luscombe JH, Bouchard AM. In0.52Al0.48As/In0.53Ga0.47As lateral resonant tunnelling transistor Electronics Letters. 27: 1832-1834.  0.64
1990 Seabaugh AC, Kao YC, Liu HY, Luscombe JH, Tsai HL, Reed MA, Gnade BE, Frensley WR. Characterization of unintentionally-ordered superlattice resonant-tunneling diodes Second International Conference On Indium Phosphide and Related Materials. 416-423.  0.64
1990 Randall JN, Reed MA, Luscombe JH, Frazier GF, Frensley WR, Seabaugh AC, Kao YC, Moore TM, Matyi RJ. Advances in the processing of quantum coupled devices Proceedings of Spie - the International Society For Optical Engineering. 1284: 66-74.  0.64
1990 Seabaugh AC, Mathias JJ, Bell MI. Semiconductor measurement technology. EPROP. An interactive FORTRAN program for computing selected Electronic PROPerties of gallium arsenide and silicon Nist Special Publication 0.64
1989 Kao YC, Seabaugh AC, Liu HY, Kim TS, Reed MA, Saunier P, Bayraktaroglu B, Duncan WM. Improved MBE growth of InGaAs-InAlAs heterostructures for high-performance device applications Proceedings of Spie - the International Society For Optical Engineering. 1144: 30-38. DOI: 10.1117/12.961981  0.64
1989 Seabaugh AC, Frensley WR, Randall JN, Reed MA, Farrington DL, Matyi RJ. Pseudomorphic Bipolar Quantum Resonant-Tunneling Transistor Ieee Transactions On Electron Devices. 36: 2328-2334. DOI: 10.1109/16.40918  0.64
1989 Seabaugh AC, Matyi RJ, Cabaniss GE, Frensley WR. Electrochemical C-V Profiling of Heterojunction Device Structures Ieee Transactions On Electron Devices. 36: 309-313. DOI: 10.1109/16.19930  0.64
1989 Reed MA, Frensley WR, Matyi RJ, Randall JN, Seabaugh AC. Realization of a three-terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor Applied Physics Letters. 54: 1034-1036. DOI: 10.1063/1.101357  0.64
1989 Reed MA, Frensley WR, Duncan WM, Matyi RJ, Seabaugh AC, Tsai HL. Quantitative resonant tunneling spectroscopy: Current-voltage characteristics of precisely characterized resonant tunneling diodes Applied Physics Letters. 54: 1256-1258. DOI: 10.1063/1.101355  0.64
1988 Seabaugh AC, Reed MA, Frensley WR, Randall JN, Matyi RJ. Realization of pseudomorphic and superlattice bipolar resonant tunneling transistors Technical Digest - International Electron Devices Meeting. 900-902. DOI: 10.1109/IEDM.1988.32958  0.64
1987 Polak-Dingels P, Burdge G, Lee CH, Seabaugh AC, Brundage RT, Bell MI, Albers J. INVESTIGATION OF PHOTOCONDUCTIVE PICOSECOND MICROSTRIPLINE SWITCHES ON SELF-IMPLANTED SILICON ON SAPPHIRE (SOS) . 79-81.  0.64
1984 Seabaugh AC, Bell MI, Larrabee RD, Oliver JD. HIGH-FREQUENCY TRANSIENT-RESISTANCE SPECTROSCOPY OF DEEP LEVELS IN SI GAAS . 437-445.  0.64
1984 Pande KP, Seabaugh AC. LOW TEMPERATURE PLASMA-ENHANCED EPITAXY OF GaAs Journal of the Electrochemical Society. 131: 1357-1359.  0.64
1983 Pande KP, Seabaugh AC. PREPARATION OF DEVICE QUALITY GaAs USING PLASMA-ENHANCED MO-CVD TECHNIQUE Proceedings - the Electrochemical Society. 83: 201-209.  0.64
1980 Seabaugh AC, Mattauch RJ. Removal of the high-resistivity layer at the n on n+ liquid phase epitaxial GaAs layer-substrate interface by controlled in situ etch-back Journal of Applied Physics. 51: 6435-6437. DOI: 10.1063/1.327596  0.64
Show low-probability matches.