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Leonard F. Register - Publications

Affiliations: 
Electrical and Computer Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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116 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Jadaun P, Register LF, Banerjee SK. Rational design principles for giant spin Hall effect in -transition metal oxides. Proceedings of the National Academy of Sciences of the United States of America. PMID 32424094 DOI: 10.1073/Pnas.1922556117  0.33
2019 Wu X, Mou X, Register LF, Banerjee SK. Simulation of exciton condensate-mediated quantum transport in a double-monolayer transition metal dichalcogenide system Physical Review B. 99. DOI: 10.1103/Physrevb.99.035113  0.38
2019 Bhatti AA, Crum DM, Valsaraj A, Register LF, Banerjee SK. Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53Ga0.47As n-channel FinFETs Journal of Applied Physics. 126: 105705. DOI: 10.1063/1.5096391  0.347
2018 Kim K, Prasad N, Movva HCP, Burg GW, Wang Y, Larentis S, Taniguchi T, Watanabe K, Register LF, Tutuc E. Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures. Nano Letters. PMID 30105907 DOI: 10.1021/Acs.Nanolett.8B02770  0.329
2018 Burg GW, Prasad N, Kim K, Taniguchi T, Watanabe K, MacDonald AH, Register LF, Tutuc E. Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe_{2} Heterostructures. Physical Review Letters. 120: 177702. PMID 29756812 DOI: 10.1103/Physrevlett.120.177702  0.375
2018 Pramanik T, Roy U, Jadaun P, Register LF, Banerjee SK. Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations Journal of Magnetism and Magnetic Materials. 467: 96-107. DOI: 10.1016/J.Jmmm.2018.07.042  0.341
2017 Burg GW, Prasad N, Fallahazad B, Valsaraj A, Kim K, Taniguchi T, Watanabe K, Wang Q, Kim MJ, Register LF, Tutuc E. Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene - WSe2 Heterostructures. Nano Letters. PMID 28557462 DOI: 10.1021/Acs.Nanolett.7B01505  0.355
2017 Mou X, Register LF, MacDonald AH, Banerjee SK. Bilayer Pseudospin Junction Transistor (BiSJT) for “Beyond-CMOS” Logic Ieee Transactions On Electron Devices. 64: 4759-4762. DOI: 10.1109/Ted.2017.2751560  0.36
2017 Kang S, Mou X, Fallahazad B, Prasad N, Wu X, Valsaraj A, Movva HCP, Kim K, Tutuc E, Register LF, Banerjee SK. Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications Journal of Physics D: Applied Physics. 50: 383002. DOI: 10.1088/1361-6463/Aa8047  0.338
2017 Mohammed OB, Movva HCP, Prasad N, Valsaraj A, Kang S, Corbet CM, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK. ReS2-based interlayer tunnel field effect transistor Journal of Applied Physics. 122: 245701. DOI: 10.1063/1.5004038  0.378
2017 Dey R, Roy A, Pramanik T, Rai A, Shin SH, Majumder S, Register LF, Banerjee SK. Detection of current induced spin polarization in epitaxial Bi2Te3 thin film Applied Physics Letters. 110: 122403. DOI: 10.1063/1.4978691  0.323
2017 Ghosh B, Dey R, Register LF, Banerjee SK. A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator Journal of Computational Electronics. 16: 120-126. DOI: 10.1007/S10825-016-0951-X  0.521
2016 Kang S, Prasad N, Movva HC, Rai A, Kim K, Mou X, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK. Effects of Electrode Layer Band Structure on the Performance of Multi-Layer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors. Nano Letters. PMID 27416362 DOI: 10.1021/Acs.Nanolett.6B01646  0.345
2016 Roy U, Pramanik T, Register LF, Banerjee SK. Write Error Rate of Spin-Transfer-Torque Random Access Memory Including Micromagnetic Effects Using Rare Event Enhancement Ieee Transactions On Magnetics. 52: 1-6. DOI: 10.1109/Tmag.2016.2580532  0.32
2016 Crum DM, Valsaraj A, David JK, Register LF, Banerjee SK. Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations Journal of Applied Physics. 120: 224301. DOI: 10.1063/1.4970913  0.459
2016 Dey R, Roy A, Pramanik T, Guchhait S, Sonde S, Rai A, Register LF, Banerjee SK. Localization and interaction effects of epitaxial Bi2Se3 bulk states in two-dimensional limit Journal of Applied Physics. 120: 164301. DOI: 10.1063/1.4965861  0.4
2016 Valsaraj A, Register LF, Tutuc E, Banerjee SK. DFT simulations of inter-graphene-layer coupling with rotationally misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs Journal of Applied Physics. 120: 134310. DOI: 10.1063/1.4964115  0.367
2016 Ghosh B, Dey R, Register LF, Banerjee SK. Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications Journal of Applied Physics. 120: 034303. DOI: 10.1063/1.4959089  0.499
2016 Bhatti AA, Hsieh CC, Roy A, Register LF, Banerjee SK. First-principles simulation of oxygen vacancy migration in HfO x , CeO x , and at their interfaces for applications in resistive random-access memories Journal of Computational Electronics. 15: 741-748. DOI: 10.1007/S10825-016-0847-9  0.313
2015 Rai A, Valsaraj A, Movva HC, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register LF, Tutuc E, Banerjee SK. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation. Nano Letters. PMID 26091062 DOI: 10.1021/Acs.Nanolett.5B00314  0.379
2015 Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Gate-tunable resonant tunneling in double bilayer graphene heterostructures. Nano Letters. 15: 428-33. PMID 25436861 DOI: 10.1021/Nl503756Y  0.358
2015 Hsu W, Mantey J, Register LF, Banerjee SK. On the Electrostatic Control of Gate-Normal-Tunneling Field-Effect Transistors Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2434615  0.443
2015 Crum DM, Valsaraj A, Register LF, Banerjee SK, Sahu B, Krivakopic Z, Banna S, Nayak D. Impact of gate oxide complex band structure on n-channel III-V FinFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 250-253. DOI: 10.1109/SISPAD.2015.7292306  0.305
2015 Kang S, Fallahazad B, Lee K, Movva H, Kim K, Corbet CM, Taniguchi T, Watanabe K, Colombo L, Register LF, Tutuc E, Banerjee SK. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET Ieee Electron Device Letters. 36: 405-407. DOI: 10.1109/Led.2015.2398737  0.372
2015 Tutuc E, Fallahazad B, Kang S, Lee K, Kim K, Movva HCP, Mou X, Corbet CM, Register LF, Banerjee SK, Taniguchi T, Watanabe K. Gate tunable resonant tunneling in graphene-based heterostructures and device applications Device Research Conference - Conference Digest, Drc. 2015: 269-270. DOI: 10.1109/DRC.2015.7175677  0.304
2015 Mou X, Register LF, Macdonald AH, Banerjee SK. Quantum transport simulation of exciton condensate transport physics in a double-layer graphene system Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.235413  0.464
2015 Valsaraj A, Chang J, Rai A, Register LF, Banerjee SK. Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide 2d Materials. 2. DOI: 10.1088/2053-1583/2/4/045009  0.391
2015 Roy U, Dey R, Pramanik T, Ghosh B, Register LF, Banerjee SK. Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator Journal of Applied Physics. 117. DOI: 10.1063/1.4918900  0.531
2015 Hsu W, Mantey J, Register LF, Banerjee SK. Comment on "assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor" [Appl. Phys. Lett. 105, 082108 (2014)] Applied Physics Letters. 106. DOI: 10.1063/1.4905865  0.366
2014 Zhai Y, Mathew L, Rao R, Palard M, Chopra S, Ekerdt JG, Register LF, Banerjee SK. High-performance vertical gate-all-around silicon nanowire FET with high-κ/metal gate Ieee Transactions On Electron Devices. 61: 3896-3900. DOI: 10.1109/Ted.2014.2353658  0.375
2014 Mou X, Register LF, Banerjee SK. Interplay among Bilayer pseudoSpin field-effect transistor (BiSFET) performance, BiSFET scaling and condensate strength International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 309-312. DOI: 10.1109/SISPAD.2014.6931625  0.344
2014 Crum DM, Valsaraj A, Register LF, Banerjee SK. Semi-classical ensemble Monte Carlo simulator using innovative quantum corrections for nano-scale n-channel FinFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 109-112. DOI: 10.1109/SISPAD.2014.6931575  0.321
2014 Chang J, Larentis S, Tutuc E, Register LF, Banerjee SK. Atomistic simulation of the electronic states of adatoms in monolayer MoS2 Applied Physics Letters. 104. DOI: 10.1063/1.4870767  0.328
2014 Chang J, Register LF, Banerjee SK. Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide- semiconductor field effect transistors Journal of Applied Physics. 115. DOI: 10.1063/1.4866872  0.383
2014 Pramanik T, Roy U, Tsoi M, Register LF, Banerjee SK. Micromagnetic simulations of spin-wave normal modes and the spin-transfer-torque driven magnetization dynamics of a ferromagnetic cross Journal of Applied Physics. 115: 17D123. DOI: 10.1063/1.4863384  0.316
2013 Mou X, Register LF, Banerjee SK. Quantum transport simulation of Bilayer pseudoSpin Field-Effect Transistor (BiSFET) with tight-binding hartree-fock model International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 420-423. DOI: 10.1109/SISPAD.2013.6650664  0.345
2013 Mou X, Register LF, Banerjee SK. Quantum transport simulations on the feasibility of the bilayer pseudospin field effect transistor (BiSFET) Technical Digest - International Electron Devices Meeting, Iedm. 4.7.1-4.7.4. DOI: 10.1109/IEDM.2013.6724563  0.346
2013 Chang J, Register LF, Banerjee SK. Atomistic full-band simulations of monolayer MoS2 transistors Applied Physics Letters. 103. DOI: 10.1063/1.4837455  0.449
2013 Hsu W, Mantey J, Register LF, Banerjee SK. Strained-Si/strained-Ge type-II staggered heterojunction gate-normal-tunneling field-effect transistor Applied Physics Letters. 103. DOI: 10.1063/1.4819458  0.428
2013 Jadaun P, Movva HCP, Register LF, Banerjee SK. Theory and synthesis of bilayer graphene intercalated with ICl and IBr for low power device applications Journal of Applied Physics. 114. DOI: 10.1063/1.4817498  0.323
2013 Roy U, Pramanik T, Tsoi M, Register LF, Banerjee SK. Micromagnetic study of spin-transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory Journal of Applied Physics. 113. DOI: 10.1063/1.4811230  0.346
2013 Ramón ME, Akyol T, Shahrjerdi D, Young CD, Cheng J, Register LF, Banerjee SK. Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric Applied Physics Letters. 102. DOI: 10.1063/1.4776678  0.348
2012 David JK, Register LF, Banerjee SK. Semiclassical Monte Carlo analysis of graphene FETs Ieee Transactions On Electron Devices. 59: 976-982. DOI: 10.1109/Ted.2012.2184116  0.427
2012 Reddy D, Register LF, Banerjee SK. Bilayer graphene vertical tunneling field effect transistor Device Research Conference - Conference Digest, Drc. 73-74. DOI: 10.1109/DRC.2012.6256932  0.334
2012 Chang J, Register LF, Banerjee SK. Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 112. DOI: 10.1063/1.4770324  0.396
2012 David JK, Register LF, Banerjee SK. A path-sum Monte Carlo approach for many-electron systems within a tight-binding basis Journal of Computational Electronics. 11: 172-181. DOI: 10.1007/S10825-012-0393-Z  0.335
2011 Jadaun P, Banerjee SK, Register LF, Sahu B. Density functional theory based study of graphene and dielectric oxide interfaces. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 23: 505503. PMID 22119858 DOI: 10.1088/0953-8984/23/50/505503  0.324
2011 Register LF, Basu D, Reddy D. From coherent states in adjacent graphene layers toward low-power logic circuits Advances in Condensed Matter Physics. 2011. DOI: 10.1155/2011/258731  0.368
2011 Lee SH, Nainani A, Oh J, Jeon K, Kirsch PD, Majhi P, Register LF, Banerjee SK, Jammy R. On-state performance enhancement and channel-direction-dependent performance of a biaxial compressive strained Si0.5Ge0.5 quantum-well pMOSFET along 〈 110 〉 and 〈 100 〉 channel directions Ieee Transactions On Electron Devices. 58: 985-995. DOI: 10.1109/Ted.2011.2105876  0.317
2011 Liu KM, Register LF, Banerjee SK. Quantum transport simulation of strain and orientation effects in sub-20 nm silicon-on-insulator FinFETs Ieee Transactions On Electron Devices. 58: 4-10. DOI: 10.1109/Ted.2010.2084090  0.439
2011 Register LF, Hasan MM, Banerjee SK. Stepped broken-gap heterobarrier tunneling field-effect transistor for ultralow power and high speed Ieee Electron Device Letters. 32: 743-745. DOI: 10.1109/Led.2011.2126038  0.413
2011 Basu D, Register LF, MacDonald AH, Banerjee SK. Effect of interlayer bare tunneling on electron-hole coherence in graphene bilayers Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.035449  0.38
2011 Chang J, Register LF, Banerjee SK, Sahu B. Density functional study of ternary topological insulator thin films Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.235108  0.31
2011 Reddy D, Register LF, Carpenter GD, Banerjee SK. Graphene field-effect transistors Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/31/313001  0.408
2011 David JK, Register LF, Banerjee SK. 3D-Monte Carlo study of short channel tri-gate nanowire MOSFETs Solid-State Electronics. 61: 7-12. DOI: 10.1016/J.Sse.2010.12.013  0.376
2010 Chang J, Kapoor AK, Register LF, Banerjee SK. Analytical model of short-channel double-gate JFETs Ieee Transactions On Electron Devices. 57: 1846-1855. DOI: 10.1109/Ted.2010.2051193  0.336
2010 Reddy D, Register LF, Tutuc E, Banerjee SK. Bilayer pseudospin field-effect transistor: Applications to boolean logic Ieee Transactions On Electron Devices. 57: 755-764. DOI: 10.1109/Ted.2010.2041280  0.333
2010 Basu D, Register LF, Reddy D, MacDonald AH, Banerjee SK. Tight-binding study of electron-hole pair condensation in graphene bilayers: Gate control and system-parameter dependence Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.075409  0.403
2010 Register LF, Shi N. Schrödinger-equation-based quantum corrections addressing degeneracy-breaking and confinement-enhanced scattering Journal of Computational Electronics. 9: 201-205. DOI: 10.1007/S10825-010-0320-0  0.421
2009 Chen H, Register LF, Banerjee SK. Resonant Injection Enhanced Field Effect Transistor for low voltage switching: Concept and quantum transport simulation International Conference On Simulation of Semiconductor Processes and Devices, Sispad. DOI: 10.1109/SISPAD.2009.5290247  0.339
2009 Basu D, Register LF, Gilbert MJ, Banerjee SK. Atomistic simulation of band-to-band tunneling in III-V nanowire field-effect transistors International Conference On Simulation of Semiconductor Processes and Devices, Sispad. DOI: 10.1109/SISPAD.2009.5290220  0.331
2009 Shi N, Register LF, Banerjee SK. Semiclassical Monte Carlo with quantum-confinement enhanced scattering: Quantum correction and application to short-channel device performance vs. mobility for biaxial-tensile-strained silicon nMOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. DOI: 10.1109/SISPAD.2009.5290202  0.334
2009 Banerjee SK, Register LF, Tutuc E, Reddy D, MacDonald AH. Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device Ieee Electron Device Letters. 30: 158-160. DOI: 10.1109/Led.2008.2009362  0.372
2008 Liu KM, Chen W, Register LF, Banerjee SK. Schrödinger equation Monte Carlo in three dimensions for simulation of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors Journal of Applied Physics. 104. DOI: 10.1063/1.3031303  0.633
2008 Basu D, Gilbert MJ, Register LF, Banerjee SK, MacDonald AH. Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2839330  0.431
2008 Chen W, Register LF, Banerjee SK. Schrödinger equation Monte Carlo in two dimensions for simulation of nanoscale metal-oxide-semiconductor field effect transistors Journal of Applied Physics. 103. DOI: 10.1063/1.2809403  0.623
2007 Fan XF, Register LF, Winstead B, Foisy MC, Chen W, Zheng X, Ghosh B, Banerjee SK. Hole mobility and thermal velocity enhancement for uniaxial stress in Si up to 4 GPa Ieee Transactions On Electron Devices. 54: 291-296. DOI: 10.1109/Ted.2006.888667  0.644
2007 Ghosh B, Fan XF, Register LF, Banerjee SK. Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 170-172. DOI: 10.1109/SISPAD.2006.282865  0.303
2006 Xia T, Register LF, Banerjee SK. Transmission through the band-gap states in Schottky-barrier carbon nanotube transistors Ieee Transactions On Nanotechnology. 5: 80-83. DOI: 10.1109/Tnano.2006.869693  0.328
2006 Ganguly S, Register LF, MacDonald AH, Banerjee SK. Two-level voltage-controlled magnetization switch using a ferromagnetic semiconductor resonant-tunneling diode Ieee Transactions On Nanotechnology. 5: 30-36. DOI: 10.1109/Tnano.2005.861406  0.39
2006 Li F, Register LF, Hasan MM, Banerjee SK. A program for device model parameter extraction from gate capacitance and current of ultrathin SiO2 and high-κ gate stacks Ieee Transactions On Electron Devices. 53: 2118-2126. DOI: 10.1109/Ted.2006.880373  0.362
2006 Li F, Tseng HH, Register LF, Tobin PJ, Banerjee SK. Asymmetry in gate capacitance-voltage (C-V) behavior of ultrathin metal gate MOSFETs with HfO2 gate dielectrics Ieee Transactions On Electron Devices. 53: 1943-1946. DOI: 10.1109/Ted.2006.878013  0.463
2006 Li F, Mudanai SP, Fan YY, Register LF, Banerjee SK. Physically based quantum - Mechanical compact model of MOS devices substrate-injected tunneling current through ultrathin (EOT ∼ 1nm) SiO2 and high-k gate stacks Ieee Transactions On Electron Devices. 53: 1096-1106. DOI: 10.1109/Ted.2006.871877  0.613
2006 Ghosh B, Fan XF, Register LF, Banerjee SK. Monte Carlo study of strained germanium nanoscale bulk pMOSFETs Ieee Transactions On Electron Devices. 53: 533-537. DOI: 10.1109/Ted.2005.863765  0.532
2006 Ganguly S, MacDonald AH, Register LF, Banerjee SK. Scattering dependence of bias-controlled magnetization switching in ferromagnetic resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.153314  0.399
2006 Zheng X, Chen W, Stroscio M, Register LF. Nonequillibrium Green's function analysis of interwell transport and scattering in monopolar lasers Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.245304  0.613
2006 Ganguly S, MacDonald AH, Register LF, Banerjee S. Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.033310  0.42
2006 Ghosh B, Chen JH, Fan XF, Register LF, Banerjee SK. Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics Solid-State Electronics. 50: 248-253. DOI: 10.1016/J.Sse.2005.12.007  0.563
2005 Li F, Mudanai S, Register LF, Banerjee SK. A physically based compact gate C-V model for ultrathin (EOT ∼ 1 nm and below) gate dielectric MOS devices Ieee Transactions On Electron Devices. 52: 1148-1158. DOI: 10.1109/Ted.2005.848079  0.451
2005 Ghosh B, Wang X, Fan XF, Register LF, Banerjee SK. Monte Carlo study of germanium n- and pMOSFETs Ieee Transactions On Electron Devices. 52: 547-553. DOI: 10.1109/Ted.2005.844736  0.587
2005 Ganguly S, Register LF, Banerjee S, MacDonald AH. Bias-voltage-controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.245306  0.376
2005 Xia TS, Register LF, Banerjee SK. Simulation study of the carbon nanotube field effect transistors beyond the complex band structure effect Solid-State Electronics. 49: 860-864. DOI: 10.1016/J.Sse.2005.02.002  0.322
2004 Fan XF, Wang X, Winstead B, Register LF, Ravaioli U, Banerjee SK. MC simulation of strained-Si MOSFET with full-band structure and quantum correction Ieee Transactions On Electron Devices. 51: 962-970. DOI: 10.1109/Ted.2004.828296  0.461
2004 Xia TS, Register LF, Banerjee SK. Calculations and applications of the complex band structure for carbon nanotube field-effect transistors Physical Review B - Condensed Matter and Materials Physics. 70. DOI: 10.1103/Physrevb.70.045322  0.321
2004 Xia TS, Register LF, Banerjee SK. Quantum transport in carbon nanotube transistors: Complex band structure effects Journal of Applied Physics. 95: 1597-1599. DOI: 10.1063/1.1631747  0.405
2003 Xia T, Register LF, Banerjee SK. Quantum transport in double-gate MOSFETs with complex band structure Ieee Transactions On Electron Devices. 50: 1511-1516. DOI: 10.1109/Ted.2003.813348  0.408
2003 Fan YY, Xiang Q, An J, Register LF, Banerjee SK. Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack: Its tradeoff with gate capacitance Ieee Transactions On Electron Devices. 50: 433-439. DOI: 10.1109/Ted.2003.809433  0.561
2003 Chen W, Register LF, Banerjee SK. Two-dimensional quantum mechanical simulation of electron transport in nano-scaled Si-based MOSFETs Physica E: Low-Dimensional Systems and Nanostructures. 19: 28-32. DOI: 10.1016/S1386-9477(03)00289-3  0.613
2002 Register LF, Chen W, Zheng X, Stroscio M. Carrier capture and transport within tunnel injection lasers: A quantum transport analysis International Journal of High Speed Electronics and Systems. 12: 1135-1145. DOI: 10.1142/S0129156402001952  0.651
2002 Fan YY, Nieh RE, Lee JC, Lucovsky G, Brown GA, Register LF, Banerjee SK. Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor Ieee Transactions On Electron Devices. 49: 1969-1978. DOI: 10.1109/Ted.2002.804713  0.59
2002 Mudanai S, Li F, Samavedam SB, Tobin PJ, Kang CS, Nieh R, Lee JC, Register LF, Banerjee SK. Interfacial defect states in HfO2 and ZrO2 nMOS capacitors Ieee Electron Device Letters. 23: 728-730. DOI: 10.1109/Led.2002.805753  0.377
2002 Chen W, Register LF, Banerjee SK. Simulation of quantum effects along the channel of ultrascaled Si-based MOSFETs Ieee Transactions On Electron Devices. 49: 652-657. DOI: 10.1109/16.992875  0.613
2002 Chen W, Zheng X, Register LF, Stroscio M. Quantum Transport Simulation of Carrier Capture and Transport within Tunnel Injection Lasers Journal of Computational Electronics. 1: 123-127. DOI: 10.1023/A:1020740500428  0.65
2001 Haggag A, McMahon W, Hess K, Fischer B, Register LF. Impact of scaling on CMOS chip failure rate, and design rules for hot carrier reliability Vlsi Design. 13: 111-115. DOI: 10.1155/2001/90787  0.328
2001 Mudanai S, Register LF, Tasch AF, Banerjee SK. Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs Ieee Electron Device Letters. 22: 145-147. DOI: 10.1109/55.910624  0.363
2001 Ouyang QC, Chen X, Tasch Al.F. J, Register LF, Banerjee SK. Built-in longitudinal field effects in sub-100-nm graded Si1-xGex channel PMOSFETs Ieee Transactions On Electron Devices. 48: 1245-1249. DOI: 10.1109/16.925255  0.313
2001 REGISTER LF, FISHER B. COLLISION BROADENING THROUGH SEQUENCES OF SCATTERING EVENTS: THEORY, CONSEQUENCES AND MODELING WITHIN SEMICLASSICAL MONTE CARLO International Journal of High Speed Electronics and Systems. 11: 455-477. DOI: 10.1016/S0129-1564(01)00091-5  0.398
2000 Register LF, Hess K. Improved algorithm for modeling collision broadening through a sequence of scattering events in semiclassical Monte Carlo Journal of Applied Physics. 87: 303-311. DOI: 10.1063/1.371861  0.368
2000 Wang X, Kencke DL, Liu KC, Tasch AF, Register LF, Banerjee SK. Monte Carlo simulation of electron transport in simple orthorhombically strained silicon Journal of Applied Physics. 88: 4717-4724. DOI: 10.1063/1.1311304  0.368
2000 Tuttle BR, Hess K, Register LF. Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress Superlattices and Microstructures. 27: 441-445. DOI: 10.1006/Spmi.2000.0859  0.313
2000 Städele M, Tuttle BR, Hess K, Register LF. Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides Superlattices and Microstructures. 27: 405-409. DOI: 10.1006/Spmi.2000.0850  0.37
1999 Register LF, Rosenbaum E, Yang K. Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices Applied Physics Letters. 74: 457-459. DOI: 10.1063/1.123060  0.392
1999 Hess K, Register LF, McMahon W, Tuttle B, Aktas O, Ravaioli U, Lyding JW, Kizilyalli IC. Theory of channel hot-carrier degradation in MOSFETs Physica B: Condensed Matter. 272: 527-531. DOI: 10.1016/S0921-4526(99)00363-4  0.37
1999 Register LF, Hess K. Theory of collision broadening through a sequence of scattering events with applications to semiclassical Monte Carlo Microelectronic Engineering. 47: 353-355. DOI: 10.1016/S0167-9317(99)00232-4  0.381
1998 Klein B, Register LF, Grupen M, Hess K. Numerical simulation of vertical cavity surface emitting lasers Optics Express. 2: 163-168. DOI: 10.1364/Oe.2.000163  0.307
1998 Register LF. Simulation of optical excitation to and emission from electron Fabry-Perot states subject to strong inelastic scattering Vlsi Design. 6: 351-353. DOI: 10.1155/1998/96493  0.372
1998 Register LF. Carrier capture in semiconductor quantum well lasers: A quantum transport analysis International Journal of High Speed Electronics and Systems. 9: 1211-1233. DOI: 10.1142/S0129156498000476  0.415
1998 Register LF. Schrödinger Equation Monte Carlo: Bridging The Gap From Quantum To Classical Transport International Journal of High Speed Electronics and Systems. 9: 251-279. DOI: 10.1142/S0129156498000129  0.424
1998 Klein B, Register LF, Hess K, Deppe DG, Deng Q. Self-consistent Green's function approach to the analysis of dielectrically apertured vertical-cavity surface-emitting lasers Applied Physics Letters. 73: 3324-3326. DOI: 10.1063/1.122710  0.303
1998 Hess K, Register LF, Tuttle B, Lyding J, Kizilyalli IC. Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime Physica E: Low-Dimensional Systems and Nanostructures. 3: 1-7. DOI: 10.1016/S1386-9477(98)00211-2  0.341
1997 Rosenbaum E, Register LF. Mechanism of stress-induced leakage current in MOS capacitors Ieee Transactions On Electron Devices. 44: 317-323. DOI: 10.1109/16.557724  0.361
1997 Register LF, Hess K. Simulation of carrier capture in semiconductor quantum wells: Bridging the gap from quantum to classical transport Applied Physics Letters. 71: 1222-1224. DOI: 10.1063/1.119857  0.422
1995 Register LF, Hess K. Simulation of carrier capture in quantum well lasers due to strong inelastic scattering Superlattices and Microstructures. 18: 223. DOI: 10.1006/Spmi.1995.1106  0.421
1994 Register LF, Hess K. Numerical simulation of electron transport in mesoscopic structures with weak dissipation Physical Review B. 49: 1900-1907. DOI: 10.1103/Physrevb.49.1900  0.372
1992 Register LF. Microscopic basis for a sum rule for polar-optical-phonon scattering of carriers in heterostructures Physical Review B. 45: 8756-8759. DOI: 10.1103/Physrevb.45.8756  0.331
1991 Register LF, Ravaioli U, Hess K. Numerical simulation of mesoscopic systems with open boundaries using the multidimensional time-dependent Schrödinger equation Journal of Applied Physics. 69: 7153-7158. DOI: 10.1063/1.347606  0.345
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