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Ming-Fang Wang, Ph.D. - Publications

Affiliations: 
2007 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Neuroscience Biology
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Xie J, Lee C, Wang M, Feng H. Seal and encapsulate cavities for complementary metal-oxide-semiconductor microelectromechanical system thermoelectric power generators Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 21401. DOI: 10.1116/1.3556954  0.308
2010 Wang MF, Maleki T, Ziaie B. A self-assembled 3D microelectrode array Journal of Micromechanics and Microengineering. 20. DOI: 10.1088/0960-1317/20/3/035013  0.541
2008 Wang MF, Maleki T, Ziaie B. Enhanced 3-D folding of silicon microstructures via thermal shrinkage of a composite organic/inorganic bilayer Journal of Microelectromechanical Systems. 17: 882-889. DOI: 10.1109/Jmems.2008.926138  0.547
2007 Wang MF, Raghunathan N, Ziaie B. A nonlithographic top-down electrochemical approach for creating hierarchical (micro-nano) superhydrophobic silicon surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 2300-3. PMID 17266346 DOI: 10.1021/La063230L  0.51
2003 Yang CW, Fang YK, Chen SF, Lin CY, Wang MF, Lin YM, Hou TH, Yao LG, Chen SC, Liang MS. Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation Electronics Letters. 39: 421-422. DOI: 10.1049/El:20030278  0.353
2002 Chen C, Fang Y, Yang C, Tsair Y, Wang M, Yao L, Chen S, Yu C, Liang M. The 1.3–1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 μm and beyond CMOS technology application Solid-State Electronics. 46: 539-544. DOI: 10.1016/S0038-1101(01)00274-X  0.355
2001 Chen C, Fang Y, Yang C, Ting S, Tsair Y, Wang M, Hou T, Yu M, Chen S, Jang SM, Yu DCH, Liang M. To optimize electrical properties of the ultrathin (1.6 nm) nitride/oxide gate stacks with bottom oxide materials and post-deposition treatment Ieee Transactions On Electron Devices. 48: 2769-2776. DOI: 10.1109/16.974702  0.302
2001 Chen C, Fang Y, Yang C, Ting S, Tsair Y, Wang M, Chen S, Yu C, Liang M. Effects of post-deposition treatments on ultrathin nitride/oxide gate stack prepared by RTCVD for ULSI devices Solid-State Electronics. 45: 461-465. DOI: 10.1016/S0038-1101(01)00019-3  0.327
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