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Peter Y. Yu - Publications

Affiliations: 
Physics University of California, Berkeley, Berkeley, CA, United States 
Area:
semiconductor physics
Website:
https://physics.berkeley.edu/people/faculty/peter-yu
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32 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Zhang X, Wang D, Beres M, Liu L, Ma Z, Yu PY, Mao SS. Zincblende-wurtzite phase transformation of ZnSe films by pulsed laser deposition with nitrogen doping Applied Physics Letters. 103. DOI: 10.1063/1.4819271  0.334
2012 Zhang X, Man Yu K, Kronawitter CX, Ma Z, Yu PY, Mao SS. Heavy p-type doping of ZnSe thin films using Cu 2Se in pulsed laser deposition Applied Physics Letters. 101. DOI: 10.1063/1.4739083  0.312
2009 Ma Z, Yu KM, Walukiewicz W, Yu PY, Mao SS. Strain relaxation of CdTe films growing on lattice-mismatched substrates Applied Physics a: Materials Science and Processing. 96: 379-384. DOI: 10.1007/S00339-009-5195-1  0.324
2008 Ma Z, Liu L, Yu KM, Walukiewicz W, Perry DL, Yu PY, Mao SS. Experimental and theoretical studies on gadolinium doping in ZnTe Journal of Applied Physics. 103. DOI: 10.1063/1.2832403  0.387
2007 Ma Z, Yu KM, Liu L, Wang L, Perry DL, Walukiewicz W, Yu P, Mao SS. Copper-doped CdTe films with improved hole mobility Applied Physics Letters. 91. DOI: 10.1063/1.2778455  0.311
2001 Choi I, Yu PY. Suppression of the anomalous blue shift in the band gap temperature dependence of AgCuGaS{sub 2} alloys Physical Review B. 63: 235210. DOI: 10.1103/Physrevb.63.235210  0.351
2001 Colton JS, Yu PY. What determines the emission peak energy of the blue luminescence in highly Mg-doped p-GaN? Applied Physics Letters. 78: 2500-2502. DOI: 10.1063/1.1367904  0.579
2000 Colton JS, Yu PY. Selectively excited blue luminescence in heavily Mg doped p-type GaN Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 2000: 11-14. DOI: 10.1109/Sim.2000.939188  0.576
2000 Teo KL, Kwok SH, Yu P, Guha S. Quantum confinement of quasi-two-dimensional E{sub 1} excitons in Ge nanocrystals studied by resonant Raman scattering Physical Review B. 62: 1584-1587. DOI: 10.1103/Physrevb.62.1584  0.345
1999 Colton JS, Yu PY, Teo KL, Perlin P, Weber ER, Grzegory I, Uchida K. Selective excitation of the yellow luminescence of GaN Physica B: Condensed Matter. 273: 75-79. DOI: 10.1016/S0921-4526(99)00410-X  0.572
1998 Yu PY, Choi I, Eom S. Response to “Comment on ‘Dispersion of birefringence in AgGaS2 and CuGaS2’ ” [J. Appl. Phys. 84, 2364 (1998)] Journal of Applied Physics. 84: 2365-2365. DOI: 10.1063/1.368505  0.32
1997 Choi I, Yu PY. Observation of Metastable Deep Acceptor States in AgGaS{sub 2}from Donor-Acceptor Pair Emission Spectra Physical Review B. 56. DOI: 10.1103/Physrevb.56.R4321  0.315
1997 Choi I, Yu PY. Pressure dependence of defects and p-d hybridization in chalcopyrite semiconductors Physical Review B. 55: 9642-9648. DOI: 10.1103/Physrevb.55.9642  0.356
1997 Yu PY, Cardona M. Fundamentals of semiconductors : physics and materials properties Physics Today. 50: 76-77. DOI: 10.1063/1.882012  0.439
1997 Choi I, Eom S, Yu PY. Dispersion of birefringence in AgGaS2 and CuGaS2 Journal of Applied Physics. 82: 3100-3104. DOI: 10.1063/1.366150  0.342
1994 Choi I, Yu PY. Pressure dependence of deep level transitions in AgGaSe2 Applied Physics Letters. 64: 1717-1719. DOI: 10.1063/1.111815  0.309
1992 Li MF, Yu PY, Weber ER, Bauser E, Hansen WL, Haller EE. Studies of deep level transient spectroscopy of DX centers in GaAlAs: Te under uniaxial stress Materials Science Forum. 853-858. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.853  0.313
1991 Li M, Yu PY, Weber ER. Simulation of effects of uniaxial stress on the deep level transient spectroscopy spectra of the DX center in AlGaAs alloys Applied Physics Letters. 59: 1197-1199. DOI: 10.1063/1.105501  0.343
1990 Seguy P, Yu PY, Li M, Leon R, Chan KT. Effect of light on the DX centers in Si- and Te-doped GaAlAs Applied Physics Letters. 57: 2469-2471. DOI: 10.1063/1.103854  0.329
1988 Lee HP, Wang S, Huang Y, Yu P. Photoluminescence studies of selective-area molecular beam epitaxy of GaAs film on Si substrate Applied Physics Letters. 52: 215-217. DOI: 10.1063/1.99523  0.301
1988 Huang Y, Yu PY, Lee H, Wang S. Characterization of GaAs film grown on Si substrate by photoluminescence at 77 K Applied Physics Letters. 52: 579-581. DOI: 10.1063/1.99371  0.319
1988 Lee HP, Liu X, Lin H, Smith JS, Wang S, Huang Y, Yu P, Huang Y. Tensile stress variations of chemically etched GaAs films grown on Si substrates Applied Physics Letters. 53: 2394-2396. DOI: 10.1063/1.100241  0.332
1987 Huang Y, Yu PY, Charasse M, Lo Y, Wang S. Raman study of an epitaxial GaAs layer on a Si (100) substrate Applied Physics Letters. 51: 192-194. DOI: 10.1063/1.98919  0.307
1981 Yu PY, Hermann C. Excitation spectroscopies of impurities in CdSe Physical Review B. 23: 4097-4106. DOI: 10.1103/Physrevb.23.4097  0.344
1973 Yu PY, Cardona M. Intrinsic piezobirefringence of several semiconducting chalcogenides Journal of Physics and Chemistry of Solids. 34: 29-56. DOI: 10.1016/0022-3697(73)90059-0  0.357
1972 Cardona M, Penchina CM, Koch EE, Yu PY. Optical and Photoelectric Properties of the Lead Chalcogenides Physica Status Solidi B-Basic Solid State Physics. 53: 327-339. DOI: 10.1002/Pssb.2220530135  0.391
1972 Gudat W, Koch EE, Yu PY, Cardona M, Penchina CM. Core Levels of III‐V Semiconductors Physica Status Solidi B-Basic Solid State Physics. 52: 505-518. DOI: 10.1002/Pssb.2220520220  0.426
1971 Yu PY, Cardona M, Pollak FH. Intrinsic piezobirefringence in GaSb, InAs, and InSb Physical Review B. 3: 340-346. DOI: 10.1103/Physrevb.3.340  0.44
1971 Yu PY, Cardona M. Spatial dispersion in the dielectric constant of GaAs Solid State Communications. 9: 1421-1424. DOI: 10.1016/0038-1098(71)90409-1  0.363
1971 Yu PY, Cardona M. Dispersion and relaxation in the stress‐induced birefringence of amorphous selenium Physica Status Solidi B-Basic Solid State Physics. 47: 251-260. DOI: 10.1002/Pssb.2220470132  0.326
1970 Cardona M, Gudat W, Koch EE, Skibowski M, Sonntag B, Yu PY. Core Transitions and Density of Conduction States in the III-V Semiconductors Physical Review Letters. 25: 659-661. DOI: 10.1103/Physrevlett.25.659  0.304
1970 Yu PY, Cardona M. Temperature Coefficient of the Refractive Index of Diamond- and Zinc-Blende-Type Semiconductors Physical Review B. 2: 3193-3197. DOI: 10.1103/Physrevb.2.3193  0.374
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