Year |
Citation |
Score |
2016 |
Pralle MU, Vineis C, Palsule C, Jiang J, Carey JE. Extending black silicon imaging to backside illumination Proceedings of Spie. 9819: 981904. DOI: 10.1117/12.2223063 |
0.343 |
|
2015 |
Pralle MU, Carey JE, Vineis C, Palsule C, Jiang J, Joy T. IR CMOS: The digital nightvision solution to sub-1 mLux imaging Proceedings of Spie - the International Society For Optical Engineering. 9451. DOI: 10.1117/12.2177006 |
0.314 |
|
2013 |
Pralle MU, Carey JE, Homayoon H, Sickler J, Li X, Jiang J, Sahebi F, Palsule C, McKee J. Infrared enhanced detection for laser imaging and biometrics Proceedings of Spie - the International Society For Optical Engineering. 8734. DOI: 10.1117/12.2020291 |
0.306 |
|
2013 |
Pralle MU, Carey JE, Homayoon H, Vineis C, Sickler J, Li X, Jiang J, Sahebi F, Palsule C, McKee J. IR CMOS: Infrared enhanced silicon imaging Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2015959 |
0.313 |
|
2012 |
Pralle MU, Carey JE, Homayoon H, Sickler J, Li X, Jiang J, Hong C, Sahebi F, Palsule C, McKee J. IR CMOS: Ultrafast laser-enhanced silicon imaging Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919530 |
0.334 |
|
2011 |
Pralle MU, Carey JE, Homayoon H, Sickler J, Li X, Jiang J, Miller D, Palsule C, Mckee. J. IR CMOS: Ultrafast laser-enhanced silicon detection Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.882867 |
0.352 |
|
2010 |
Pralle MU, Carey JE, Homayoon H, Alie S, Sickler J, Li X, Jiang J, Miller D, Palsule C, McKee J. Black silicon enhanced photodetectors: A path to IR CMOS Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.849683 |
0.349 |
|
2005 |
Jiang J, Tsao S, Mi K, Razeghi M, Brown GJ, Jelen C, Tidrow MZ. Advanced monolithic quantum well infrared photodetector focal plane array integrated with silicon readout integrated circuit Infrared Physics & Technology. 46: 199-207. DOI: 10.1016/J.Infrared.2004.02.002 |
0.638 |
|
2004 |
Jiang J, Tsao S, O'Sullivan T, Zhang W, Lim H, Sills T, Mi K, Razeghi M, Brown GJ, Tidrow MZ. High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition Applied Physics Letters. 84: 2166-2168. DOI: 10.1063/1.1688982 |
0.657 |
|
2004 |
Jiang J, Mi K, Tsao S, Zhang W, Lim H, O'Sullivan T, Sills T, Razeghi M, Brown GJ, Tidrow MZ. Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors Applied Physics Letters. 84: 2232-2234. DOI: 10.1063/1.1688000 |
0.664 |
|
2004 |
Jiang J, Tsao S, O’Sullivan T, Razeghi M, Brown GJ. Fabrication of indium bumps for hybrid infrared focal plane array applications Infrared Physics & Technology. 45: 143-151. DOI: 10.1016/J.Infrared.2003.08.002 |
0.615 |
|
2003 |
Jiang J, Mi K, McClintock R, Razeghi M, Brown GJ, Jelen C. Demonstration of 256 × 256 focal plane array based on Al-free GaInAs-InP QWIP Ieee Photonics Technology Letters. 15: 1273-1275. DOI: 10.1109/Lpt.2003.816667 |
0.637 |
|
2002 |
Jiang J, Jelen C, Razeghi M, Brown GJ. High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates Ieee Photonics Technology Letters. 14: 372-374. DOI: 10.1109/68.986817 |
0.498 |
|
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