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Dimitrios Maroudas - Publications

Affiliations: 
Chemical Engineering University of Massachusetts, Amherst, Amherst, MA 
Area:
Chemical Engineering
Website:
https://www.journals.elsevier.com/surface-science/editorial-board/d-maroudas-phd
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Year Citation  Score
2019 Hammond KD, Naeger IV, Widanagamaachchi W, Lo L, Maroudas D, Wirth BD. Helium flux effects on bubble growth and surface morphology in plasma-facing tungsten from large-scale molecular dynamics simulations Nuclear Fusion. 59: 066035. DOI: 10.1088/1741-4326/Ab12F6  0.321
2019 Maroudas D, Muniz AR, Ramasubramaniam A. Structure-properties relations in graphene derivatives and metamaterials obtained by atomic-scale modeling Molecular Simulation. 45: 1173-1202. DOI: 10.1080/08927022.2019.1628229  0.64
2019 Chen M, Hu L, Ramasubramaniam A, Maroudas D. Effects of pore morphology and pore edge termination on the mechanical behavior of graphene nanomeshes Journal of Applied Physics. 126: 164306. DOI: 10.1063/1.5125107  0.35
2019 Kumar A, Chen C, Maroudas D. Fabrication of Ordered Arrays of Quantum Dot Molecules Based on the Design of Pyramidal Pit Patterns on Semiconductor Surfaces Industrial & Engineering Chemistry Research. 59: 2536-2547. DOI: 10.1021/Acs.Iecr.9B04463  0.367
2019 Maroudas D, Wirth BD. Atomic-scale modeling toward enabling models of surface nanostructure formation in plasma-facing materials Current Opinion in Chemical Engineering. 23: 77-84. DOI: 10.1016/J.Coche.2019.03.001  0.372
2018 Chen M, Muniz AR, Maroudas D. Formation and Mechanical Behavior of Nanocomposite Superstructures from Interlayer Bonding in Twisted Bilayer Graphene. Acs Applied Materials & Interfaces. PMID 30088413 DOI: 10.1021/Acsami.8B09741  0.663
2018 Du L, Khenner M, Maroudas D. Kinetics of nanoring formation on surfaces of stressed thin films Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.083403  0.336
2018 Du L, Maroudas D. Optimization of electrical treatment strategy for surface roughness reduction in conducting thin films Journal of Applied Physics. 124: 125302. DOI: 10.1063/1.5047405  0.369
2018 Hammond KD, Blondel S, Hu L, Maroudas D, Wirth BD. Large-scale atomistic simulations of low-energy helium implantation into tungsten single crystals Acta Materialia. 144: 561-578. DOI: 10.1016/J.Actamat.2017.09.061  0.36
2017 Weerasinghe A, Lu CT, Maroudas D, Ramasubramaniam A. A Multiscale Shear-Lag Analysis of Stiffness Enhancement in Polymer-Graphene Nanocomposites. Acs Applied Materials & Interfaces. PMID 28621129 DOI: 10.1021/Acsami.7B03159  0.305
2017 Blondel S, Hammond KD, Hu L, Maroudas D, Wirth BD. Modeling Helium Segregation to the Surfaces of Plasma-Exposed Tungsten as a Function of Temperature and Surface Orientation Fusion Science and Technology. 71: 22-35. DOI: 10.13182/Fst16-112  0.368
2017 Blondel S, Bernholdt DE, Hammond KD, Hu L, Maroudas D, Wirth BD. Benchmarks and Tests of a Multidimensional Cluster Dynamics Model of Helium Implantation in Tungsten Fusion Science and Technology. 71: 84-92. DOI: 10.13182/Fst16-109  0.327
2017 Hu L, Hammond KD, Wirth BD, Maroudas D. Dynamics of Small Mobile Helium Clusters Near a Symmetric Tilt Grain Boundary of Plasma-Exposed Tungsten Fusion Science and Technology. 71: 36-51. DOI: 10.13182/Fst16-105  0.322
2017 Du L, Nguyen TN, Gilman A, Muniz AR, Maroudas D. Tuning the band structure of graphene nanoribbons through defect-interaction-driven edge patterning Physical Review B. 96. DOI: 10.1103/Physrevb.96.245422  0.631
2017 Du L, Maroudas D. Current-induced surface roughness reduction in conducting thin films Applied Physics Letters. 110: 103103. DOI: 10.1063/1.4977024  0.376
2016 Lu CT, Weerasinghe A, Maroudas D, Ramasubramaniam A. A Comparison of the Elastic Properties of Graphene- and Fullerene-Reinforced Polymer Composites: The Role of Filler Morphology and Size. Scientific Reports. 6: 31735. PMID 27546738 DOI: 10.1038/Srep31735  0.303
2016 Maroudas D, Blondel S, Hu L, Hammond KD, Wirth BD. Helium segregation on surfaces of plasma-exposed tungsten. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 064004. PMID 26794828 DOI: 10.1088/0953-8984/28/6/064004  0.366
2016 Weerasinghe A, Muniz AR, Ramasubramaniam A, Maroudas D. Mechanical properties of hydrogenated electron-irradiated graphene Journal of Applied Physics. 120. DOI: 10.1063/1.4962716  0.653
2016 Du L, Maroudas D. Theory of multiple quantum dot formation in strained-layer heteroepitaxy Applied Physics Letters. 109. DOI: 10.1063/1.4955409  0.395
2015 Sehgal RM, Maroudas D. Equilibrium Shape of Colloidal Crystals. Langmuir : the Acs Journal of Surfaces and Colloids. 31: 11428-37. PMID 26439330 DOI: 10.1021/Acs.Langmuir.5B02952  0.777
2015 Hu L, Hammond KD, Wirth BD, Maroudas D. Molecular-dynamics analysis of mobile helium cluster reactions near surfaces of plasma-exposed tungsten Journal of Applied Physics. 118. DOI: 10.1063/1.4933393  0.342
2015 Du L, Dasgupta D, Maroudas D. Weakly nonlinear theory of secondary rippling instability in surfaces of stressed solids Journal of Applied Physics. 118. DOI: 10.1063/1.4926739  0.341
2015 Hu L, Wyant S, Muniz AR, Ramasubramaniam A, Maroudas D. Mechanical behavior and fracture of graphene nanomeshes Journal of Applied Physics. 117. DOI: 10.1063/1.4905583  0.644
2015 Bevan MA, Ford DM, Grover MA, Shapiro B, Maroudas D, Yang Y, Thyagarajan R, Tang X, Sehgal RM. Controlling assembly of colloidal particles into structured objects: Basic strategy and a case study Journal of Process Control. 27: 64-75. DOI: 10.1016/J.Jprocont.2014.11.011  0.777
2015 Wirth BD, Hammond KD, Krasheninnikov SI, Maroudas D. Challenges and opportunities of modeling plasma-surface interactions in tungsten using high-performance computing Journal of Nuclear Materials. 463: 30-38. DOI: 10.1016/J.Jnucmat.2014.11.072  0.328
2015 Muniz AR, Machado AS, Maroudas D. Mechanical behavior of interlayer-bonded nanostructures obtained from bilayer graphene Carbon. 81: 663-677. DOI: 10.1016/J.Carbon.2014.10.003  0.67
2014 Sehgal RM, Maroudas D, Ford DM. Phase behavior of the 38-atom Lennard-Jones cluster. The Journal of Chemical Physics. 140: 104312. PMID 24628174 DOI: 10.1063/1.4866810  0.773
2014 Du L, Dasgupta D, Maroudas D. Stabilization of the surface morphology of stressed solids using simultaneously applied electric fields and thermal gradients Journal of Applied Physics. 116. DOI: 10.1063/1.4899248  0.351
2014 Du L, Dasgupta D, Maroudas D. Stabilization of the surface morphology of stressed solids using thermal gradients Applied Physics Letters. 104. DOI: 10.1063/1.4874879  0.352
2014 Hu L, Hammond KD, Wirth BD, Maroudas D. Interactions of mobile helium clusters with surfaces and grain boundaries of plasma-exposed tungsten Journal of Applied Physics. 115. DOI: 10.1063/1.4874675  0.323
2014 Carpenter C, Christmann AM, Hu L, Fampiou I, Muniz AR, Ramasubramaniam A, Maroudas D. Elastic properties of graphene nanomeshes Applied Physics Letters. 104. DOI: 10.1063/1.4871304  0.649
2014 Sehgal RM, Maroudas D, Ford DM. Effects of the attractive potential range on the phase behavior of small clusters of colloidal particles Journal of Chemical and Engineering Data. 59: 3105-3112. DOI: 10.1021/Je500178W  0.783
2014 Hu L, Hammond KD, Wirth BD, Maroudas D. Dynamics of small mobile helium clusters near tungsten surfaces Surface Science. 626: L21-L25. DOI: 10.1016/J.Susc.2014.03.020  0.343
2014 Muniz AR, Machado A, Maroudas D. Structural, electronic, and mechanical properties of superlattices of interlayer-bonded domains in twisted bilayer graphene Nanoscale Science and Engineering Forum 2013 - Core Programming Area At the 2013 Aiche Annual Meeting: Global Challenges For Engineering a Sustainable Future. 471.  0.606
2013 Dasgupta D, Maroudas D. Surface nanopatterning from current-driven assembly of single-layer epitaxial islands Applied Physics Letters. 103. DOI: 10.1063/1.4827304  0.331
2013 Machado AS, Maroudas D, Muniz AR. Tunable mechanical properties of diamond superlattices generated by interlayer bonding in twisted bilayer graphene Applied Physics Letters. 103. DOI: 10.1063/1.4813271  0.655
2013 Sfyris GI, Dasgupta D, Maroudas D. The effect of a thermal gradient on the electromigration-driven surface morphological stabilization of an epitaxial thin film on a compliant substrate Journal of Applied Physics. 114. DOI: 10.1063/1.4812289  0.379
2013 Sehgal RM, Cogan JG, Ford DM, Maroudas D. Onset of the crystalline phase in small assemblies of colloidal particles Applied Physics Letters. 102. DOI: 10.1063/1.4807676  0.781
2013 Muniz AR, Maroudas D. Superlattices of fluorinated interlayer-bonded domains in twisted bilayer graphene Journal of Physical Chemistry C. 117: 7315-7325. DOI: 10.1021/Jp310184C  0.663
2013 Dasgupta D, Sfyris GI, Maroudas D. Current-driven morphological evolution of single-layer epitaxial islands on crystalline substrates Surface Science. 618. DOI: 10.1016/J.Susc.2013.07.015  0.337
2013 Maroudas D, Han X, Pandey SC. Design of semiconductor ternary quantum dots with optimal optoelectronic function Aiche Journal. 59: 3223-3236. DOI: 10.1002/Aic.14118  0.56
2013 Sehgal RM, Ford D, Maroudas D. Coarse-grained modeling of the phase behavior of thermodynamically small particle assemblies Computational Molecular Science and Engineering Forum 2013 - Core Programming Area At the 2013 Aiche Annual Meeting: Global Challenges For Engineering a Sustainable Future. 65-66.  0.77
2013 Sehgal RM, Ford D, Maroudas D. Coarse-grained description of phase behavior in 38-member clusters of Lennard-Jones particles Engineering Sciences and Fundamentals 2013 - Core Programming Area At the 2013 Aiche Annual Meeting: Global Challenges For Engineering a Sustainable Future. 2: 684.  0.769
2013 Han X, Pandey SC, Maroudas D. Effects of composition and compositional distribution on the optoelectronic properties and function of semiconductor ternary quantum Dots Fuels and Petrochemicals Division 2013 - Core Programming Area At the 2013 Aiche Annual Meeting: Global Challenges For Engineering a Sustainable Future. 116.  0.457
2012 Beltran-Villegas DJ, Sehgal RM, Maroudas D, Ford DM, Bevan MA. Colloidal cluster crystallization dynamics. The Journal of Chemical Physics. 137: 134901. PMID 23039607 DOI: 10.1063/1.4754870  0.778
2012 Muniz AR, Maroudas D. Opening and tuning of band gap by the formation of diamond superlattices in twisted bilayer graphene Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.075404  0.653
2012 Dasgupta D, Sfyris GI, Maroudas D. Electromigration-driven complex dynamics of void surfaces in stressed metallic thin films under a general biaxial mechanical loading Journal of Applied Physics. 112. DOI: 10.1063/1.4759451  0.365
2012 Han X, Pandey SC, Maroudas D. Kinetics of interdiffusion in semiconductor ternary quantum dots Applied Physics Letters. 101. DOI: 10.1063/1.4757148  0.535
2012 Singh T, Mountziaris TJ, Maroudas D. First-principles theoretical analysis of transition-metal doping of ZnSe quantum dots Journal of Applied Physics. 112. DOI: 10.1063/1.4734841  0.72
2012 Pandey SC, Wang J, Mountziaris TJ, Maroudas D. Thermodynamic instability of ZnSe/ZnS core/shell quantum dots Journal of Applied Physics. 111. DOI: 10.1063/1.4728176  0.706
2012 Carpenter C, Ramasubramaniam A, Maroudas D. Analysis of vacancy-induced amorphization of single-layer graphene Applied Physics Letters. 100. DOI: 10.1063/1.4717116  0.324
2012 Dasgupta D, Sfyris GI, Rauf Gungor M, Maroudas D. Surface morphological stabilization of stressed crystalline solids by simultaneous action of applied electric and thermal fields Applied Physics Letters. 100. DOI: 10.1063/1.3698360  0.309
2012 Muniz AR, Maroudas D. Formation of fullerene superlattices by interlayer bonding in twisted bilayer graphene Journal of Applied Physics. 111. DOI: 10.1063/1.3682475  0.65
2012 Singh T, Mountziaris TJ, Maroudas D. Transition-metal doping of small cadmium selenide clusters Applied Physics Letters. 100. DOI: 10.1063/1.3680254  0.716
2012 Sfyris GI, Gungor MR, Maroudas D. The effect of a compliant substrate on the electromigration-driven surface morphological stabilization of an epitaxial thin film Journal of Applied Physics. 111. DOI: 10.1063/1.3676436  0.372
2011 Pandey SC, Maroudas D. Equilibrium compositional distribution in freestanding ternary semiconductor quantum dots: the case of In(x)Ga(1-x)As. The Journal of Chemical Physics. 135: 234701. PMID 22191894 DOI: 10.1063/1.3666847  0.571
2011 Beltran-Villegas DJ, Sehgal RM, Maroudas D, Ford DM, Bevan MA. A Smoluchowski model of crystallization dynamics of small colloidal clusters. The Journal of Chemical Physics. 135: 154506. PMID 22029323 DOI: 10.1063/1.3652967  0.779
2011 Pandey SC, Maroudas D. Effects of composition and compositional distribution on the electronic structure of ZnSe 1-xTe x ternary quantum dots Journal of Applied Physics. 110. DOI: 10.1063/1.3670039  0.539
2011 Sfyris GI, Rauf Gungor M, Maroudas D. Effect of applied stress tensor anisotropy on the electromechanically driven complex dynamics of void surfaces in metallic thin films Journal of Applied Physics. 110. DOI: 10.1063/1.3638070  0.392
2011 Pandey SC, Mountziaris TJ, Maroudas D. Compositional effects on the electronic structure of ZnSe 1-xSx ternary quantum dots Applied Physics Letters. 99. DOI: 10.1063/1.3633354  0.706
2011 Gungor MR, Watkins JJ, Maroudas D. Mechanical properties of ultralow-dielectric-constant mesoporous amorphous silica structures: Effects of pore morphology and loading mode Applied Physics Letters. 98. DOI: 10.1063/1.3567537  0.314
2011 Pandey SC, Sfyris GI, Maroudas D. Theory of surface segregation in ternary semiconductor quantum dots Applied Physics Letters. 98. DOI: 10.1063/1.3559939  0.571
2011 Tomar V, Gungor MR, Maroudas D. Analysis of electromechanically induced long-wavelength rippling instability on surfaces of crystalline conductors Journal of Applied Physics. 109. DOI: 10.1063/1.3551580  0.343
2011 Maroudas D. Surface morphological response of crystalline solids to mechanical stresses and electric fields Surface Science Reports. 66: 299-346. DOI: 10.1016/J.Surfrep.2011.05.001  0.389
2010 Beltran-Villegas DJ, Sehgal RM, Maroudas D, Ford DM, Bevan MA. Fokker-Planck analysis of separation dependent potentials and diffusion coefficients in simulated microscopy experiments. The Journal of Chemical Physics. 132: 044707. PMID 20113059 DOI: 10.1063/1.3299731  0.778
2010 Tomar V, Gungor MR, Maroudas D. Electromechanically driven chaotic dynamics of voids in metallic thin films Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.054111  0.358
2010 Muniz AR, Maroudas D. Hydrogenation effects on the structure and morphology of graphene and single-walled carbon nanotubes Journal of Applied Physics. 108. DOI: 10.1063/1.3514158  0.687
2010 Sfyris GI, Gungor MR, Maroudas D. Analysis of current-driven surface morphological stabilization of a coherently strained epitaxial thin film on a finite-thickness deformable substrate Journal of Applied Physics. 108. DOI: 10.1063/1.3494095  0.375
2010 Singh T, Mountziaris TJ, Maroudas D. On the transition-metal doping efficiency of zinc oxide nanocrystals Applied Physics Letters. 97. DOI: 10.1063/1.3478216  0.717
2010 Cho J, Gungor MR, Maroudas D. Analysis of current-driven motion of morphologically stable voids in metallic thin films: Steady and time-periodic states Journal of Applied Physics. 108. DOI: 10.1063/1.3476263  0.634
2010 Sfyris GI, Gungor MR, Maroudas D. Electromigration-driven surface morphological stabilization of a coherently strained epitaxial thin film on a substrate Applied Physics Letters. 96. DOI: 10.1063/1.3447371  0.378
2010 Pandey SC, Mountziaris TJ, Venkataraman D, Maroudas D. Formation of core/shell-like ZnSe1-xTex nanocrystals due to equilibrium surface segregation Applied Physics Letters. 96. DOI: 10.1063/1.3428659  0.712
2010 Tomar V, Gungor MR, Maroudas D. Effects of surface diffusional anisotropy on the current-driven surface morphological response of stressed solids Journal of Applied Physics. 107. DOI: 10.1063/1.3393965  0.356
2010 Tomar V, Gungor MR, Maroudas D. Current-induced stabilization of surface morphology in stressed solids: Validation of linear stability theory Journal of Applied Physics. 107. DOI: 10.1063/1.3391819  0.325
2009 Pandey SC, Singh T, Maroudas D. Kinetic Monte Carlo simulations of surface growth during plasma deposition of silicon thin films. The Journal of Chemical Physics. 131: 034503. PMID 19624205 DOI: 10.1063/1.3152846  0.687
2009 Muniz AR, Singh T, Aydil ES, Maroudas D. Analysis of diamond nanocrystal formation from multiwalled carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.144105  0.713
2009 Muniz AR, Meyyappan M, Maroudas D. On the hydrogen storage capacity of carbon nanotube bundles Applied Physics Letters. 95. DOI: 10.1063/1.3253711  0.634
2009 Kolluri K, Gungor MR, Maroudas D. Atomistic analysis of strain relaxation in [1 1̄ 0] -oriented biaxially strained ultrathin copper films Journal of Applied Physics. 106. DOI: 10.1063/1.3240326  0.745
2009 Tomar V, Gungor MR, Maroudas D. Rippling instability on surfaces of stressed crystalline conductors Applied Physics Letters. 94. DOI: 10.1063/1.3130742  0.355
2009 Kolluri K, Gungor MR, Maroudas D. Molecular-dynamics simulations of stacking-fault-induced dislocation annihilation in prestrained ultrathin single-crystalline copper films Journal of Applied Physics. 105. DOI: 10.1063/1.3120916  0.753
2009 Muniz AR, Singh T, Maroudas D. Effects of hydrogen chemisorption on the structure and deformation of single-walled carbon nanotubes Applied Physics Letters. 94. DOI: 10.1063/1.3095923  0.706
2009 Kolluri K, Gungor MR, Maroudas D. Comparative study of the mechanical behavior under biaxial strain of prestrained face-centered cubic metallic ultrathin films Applied Physics Letters. 94. DOI: 10.1063/1.3093676  0.73
2009 Singh T, Behr MJ, Aydil ES, Maroudas D. First-principles theoretical analysis of pure and hydrogenated crystalline carbon phases and nanostructures Chemical Physics Letters. 474: 168-174. DOI: 10.1016/J.Cplett.2009.04.048  0.496
2008 Amat MA, Arienti M, Fonoberov VA, Kevrekidis IG, Maroudas D. Coarse molecular-dynamics analysis of an order-to-disorder transformation of a krypton monolayer on graphite. The Journal of Chemical Physics. 129: 184106. PMID 19045385 DOI: 10.1063/1.3006427  0.315
2008 Tomar V, Gungor MR, Maroudas D. Current-induced stabilization of surface morphology in stressed solids. Physical Review Letters. 100: 036106. PMID 18233009 DOI: 10.1103/Physrevlett.100.036106  0.34
2008 Kolluri K, Gungor MR, Maroudas D. Molecular dynamics simulations of martensitic fcc-to-hcp phase transformations in strained ultrathin metallic films Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.195408  0.75
2008 Pandey SC, Singh T, Maroudas D. On the growth mechanism of plasma deposited amorphous silicon thin films Applied Physics Letters. 93. DOI: 10.1063/1.2990641  0.676
2008 Gungor MR, Watkins JJ, Maroudas D. Mechanical behavior of ultralow-dielectric-constant mesoporous amorphous silica Applied Physics Letters. 92. DOI: 10.1063/1.2949556  0.32
2008 Kolluri K, Gungor MR, Maroudas D. Atomic-scale analysis of defect dynamics and strain relaxation mechanisms in biaxially strained ultrathin films of face-centered cubic metals Journal of Applied Physics. 103. DOI: 10.1063/1.2938022  0.752
2008 Tomar V, Gungor MR, Maroudas D. Theoretical analysis of texture effects on the surface morphological stability of metallic thin films Applied Physics Letters. 92. DOI: 10.1063/1.2912037  0.371
2008 Cho J, Gungor MR, Maroudas D. Hopf bifurcation, bistability, and onset of current-induced surface wave propagation on void surfaces in metallic thin films Surface Science. 602: 1227-1242. DOI: 10.1016/J.Susc.2008.01.021  0.64
2008 Singh T, Mountziaris TJ, Maroudas D. First-principles theoretical analysis of dopant adsorption and diffusion on surfaces of ZnSe nanocrystals Chemical Physics Letters. 462: 265-268. DOI: 10.1016/J.Cplett.2008.07.083  0.709
2008 Pandey SC, Singh T, Maroudas D. Kinetic Monte Carlo simulations of surface growth during plasma deposition of silicon thin films Aiche Annual Meeting, Conference Proceedings.  0.539
2008 Kolluri K, Gungor MR, Maroudas D. Ultra-high strength due to dislocation depletion in small-volume structures of face-centered cubic metals Aiche Annual Meeting, Conference Proceedings.  0.691
2008 Singh T, Behr MJ, Muniz AR, Aydil ES, Maroudas D. First-principles theoretical analysis of carbon allotropes and nanostructures formed through exposure of multi-walled carbon nanotubes to hydrogen plasmas Aiche Annual Meeting, Conference Proceedings.  0.582
2007 Singh T, Valipa MS, Mountziaris TJ, Maroudas D. Mechanisms and energetics of hydride dissociation reactions on surfaces of plasma-deposited silicon thin films. The Journal of Chemical Physics. 127: 194703. PMID 18035894 DOI: 10.1063/1.2781393  0.73
2007 Bakos T, Valipa MS, Maroudas D. Interactions between radical growth precursors on plasma-deposited silicon thin-film surfaces. The Journal of Chemical Physics. 126: 114704. PMID 17381225 DOI: 10.1063/1.2672799  0.407
2007 Koronaki ED, Gungor MR, Siettos CI, Maroudas D. Current-induced wave propagation on surfaces of voids in metallic thin films with high symmetry of surface diffusional anisotropy Journal of Applied Physics. 102. DOI: 10.1063/1.2785847  0.37
2007 Singh T, Valipa MS, Mountziaris TJ, Maroudas D. First-principles theoretical analysis of sequential hydride dissociation on surfaces of silicon thin films Applied Physics Letters. 90: 251915. DOI: 10.1063/1.2746945  0.732
2007 Kolluri K, Gungor MR, Maroudas D. Void nucleation in biaxially strained ultrathin films of face-centered cubic metals Applied Physics Letters. 90. DOI: 10.1063/1.2744477  0.763
2007 Djohari H, Milstein F, Maroudas D. Stability of simple cubic crystals Applied Physics Letters. 90. DOI: 10.1063/1.2724918  0.307
2007 Rauf Gungor M, Maroudas D. Stress-induced deceleration of electromigration-driven void motion in metallic thin films Journal of Applied Physics. 101. DOI: 10.1063/1.2709616  0.316
2007 Cho J, Rauf Gungor M, Maroudas D. Theoretical analysis of current-driven interactions between voids in metallic thin films Journal of Applied Physics. 101. DOI: 10.1063/1.2426901  0.629
2006 Bakos T, Valipa MS, Maroudas D. First-principles theoretical analysis of silyl radical diffusion on silicon surfaces. The Journal of Chemical Physics. 125: 104702. PMID 16999543 DOI: 10.1063/1.2345064  0.371
2006 Valipa MS, Bakos T, Maroudas D. Surface smoothness of plasma-deposited amorphous silicon thin films: Surface diffusion of radical precursors and mechanism of Si incorporation Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.205324  0.344
2006 Amat MA, Kevrekidis IG, Maroudas D. Coarse molecular-dynamics determination of the onset of structural transitions: Melting of crystalline solids Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.132201  0.325
2006 Djohari H, Milstein F, Maroudas D. Analysis of elastic stability and structural response of face-centered cubic crystals subject to [110] loading Applied Physics Letters. 89. DOI: 10.1063/1.2372703  0.326
2006 Valipa MS, Sriraman S, Aydil ES, Maroudas D. Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si-Si bonds Journal of Applied Physics. 100. DOI: 10.1063/1.2229429  0.309
2006 Sriraman S, Valipa MS, Aydil ES, Maroudas D. Hydrogen-induced crystallization of amorphous silicon thin films. I. Simulation and analysis of film postgrowth treatment with H 2 plasmas Journal of Applied Physics. 100. DOI: 10.1063/1.2229426  0.349
2006 Cho J, Gungor MR, Maroudas D. Current-driven interactions between voids in metallic interconnect lines and their effects on line electrical resistance Applied Physics Letters. 88. DOI: 10.1063/1.2207849  0.58
2006 Kolluri K, Zepeda-Ruiz LA, Murthy CS, Maroudas D. Kinetics of strain relaxation in Si 1-x Ge x thin films on Si(100) substrates: Modeling and comparison with experiments Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2162683  0.735
2005 Valipa MS, Bakos T, Aydil ES, Maroudas D. Surface smoothening mechanism of amorphous silicon thin films. Physical Review Letters. 95: 216102. PMID 16384161 DOI: 10.1103/Physrevlett.95.216102  0.401
2005 Bakos T, Valipa MS, Maroudas D. Thermally activated mechanisms of hydrogen abstraction by growth precursors during plasma deposition of silicon thin films. The Journal of Chemical Physics. 122: 54703. PMID 15740342 DOI: 10.1063/1.1839556  0.374
2005 Rauf Gungor M, Cho J, Maroudas D. Analysis of electromigration- And stress-induced dynamical response of voids confined in metallic thin films Materials Research Society Symposium Proceedings. 899: 123-128. DOI: 10.1557/Proc-0899-N07-17  0.626
2005 Bakos T, Maroudas D. First-principles analysis of precursor-surface reaction pathways relevant to plasma deposition of silicon thin films Ieee Transactions On Plasma Science. 33: 230-231. DOI: 10.1109/Tps.2005.845002  0.355
2005 Valipa MS, Aydil ES, Maroudas D. Visualizing the evolution of surface morphology and surface bond strain during plasma deposition of amorphous silicon thin films Ieee Transactions On Plasma Science. 33: 228-229. DOI: 10.1109/Tps.2005.845000  0.374
2005 Valipa MS, Maroudas D. Atomistic analysis of the mechanism of hydrogen diffusion in plasma-deposited amorphous silicon thin films Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2158033  0.344
2005 Gungor MR, Maroudas D. Relaxation of biaxial tensile strain in ultrathin metallic films: Ductile void growth versus nanocrystalline domain formation Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2108128  0.383
2005 Cho J, Gungor MR, Maroudas D. Effects of electromigration-induced void dynamics on the evolution of electrical resistance in metallic interconnect lines Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1947373  0.585
2005 Gungor MR, Maroudas D. Atomistic mechanisms of strain relaxation due to ductile void growth in ultrathin films of face-centered-cubic metals Journal of Applied Physics. 97. DOI: 10.1063/1.1926393  0.396
2005 Agarwal S, Valipa MS, Hoex B, van de Sanden M, Maroudas D, Aydil ES. Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces Surface Science. 598: 35-44. DOI: 10.1016/J.Susc.2005.09.026  0.358
2005 Cho J, Gungor MR, Maroudas D. Electromigration-induced wave propagation on surfaces of voids in metallic thin films: Hopf bifurcation for high grain symmetry Surface Science. 575. DOI: 10.1016/J.Susc.2004.11.011  0.632
2005 Valipa MS, Sriraman S, Aydil ES, Maroudas D. Atomic-scale analysis of fundamental mechanisms of surface valley filling during plasma deposition of amorphous silicon thin films Surface Science. 574: 123-143. DOI: 10.1016/J.Susc.2004.10.039  0.393
2005 Bakos T, Valipa M, Aydil ES, Maroudas D. Temperature dependence of precursor-surface interactions in plasma deposition of silicon thin films Chemical Physics Letters. 414: 61-65. DOI: 10.1016/J.Cplett.2005.07.107  0.357
2005 Kolluri K, Zepeda-Ruiz LA, Murthy CS, Maroudas D. Strain relaxation in Si1-xGex thin films on Si (100) substrates: Modeling and comparisons with experiments Materials Research Society Symposium Proceedings. 875: 157-162.  0.725
2004 Aydil ES, Agarwal S, Valipa M, Sriraman S, Maroudas D. Surface processes during growth of hydrogenated amorphous silicon Materials Research Society Symposium Proceedings. 808: 199-207. DOI: 10.1557/Proc-808-A5.5  0.381
2004 Siettos CI, Kevrekidis IG, Maroudas D. Coarse bifurcation diagrams via microscopic simulators: A state-feedback control-based approach International Journal of Bifurcation and Chaos in Applied Sciences and Engineering. 14: 207-220. DOI: 10.1142/S0218127404009193  0.314
2004 Milstein F, Zhao J, Maroudas D. Atomic pattern formation at the onset of stress-induced elastic instability: Fracture versus phase change Physical Review B - Condensed Matter and Materials Physics. 70: 1-6. DOI: 10.1103/Physrevb.70.184102  0.336
2004 Cho J, Gungor MR, Maroudas D. Electromigration-driven motion of morphologically stable voids in metallic thin films: Universal scaling of migration speed with void size Applied Physics Letters. 85: 2214-2216. DOI: 10.1063/1.1790037  0.604
2004 Sriraman S, Aydil ES, Maroudas D. Growth and characterization of hydrogenated amorphous silicon thin films from SiH2 radical precursor: Atomic-scale analysis Journal of Applied Physics. 95: 1792-1805. DOI: 10.1063/1.1636512  0.391
2004 Valipa MS, Aydil ES, Maroudas D. Atomistic calculation of the SiH3 surface reactivity during plasma deposition of amorphous silicon thin films Surface Science. 572. DOI: 10.1016/J.Susc.2004.08.029  0.365
2003 Zepeda-Ruiz LA, Weinberg WH, Maroudas D. Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: The case of InAs/In0.50Ga0.50As/GaAs(1 1 1)A Surface Science. 540: 363-378. DOI: 10.1016/S0039-6028(03)00870-7  0.355
2003 Sriraman S, Mahalingam P, Aydil ES, Maroudas D. Mechanism and energetics of dimerization of SiH2 radicals on H-terminated Si (0 0 1)-(2 × 1) surfaces Surface Science. 540. DOI: 10.1016/S0039-6028(03)00869-0  0.368
2002 Sriraman S, Agarwal S, Aydil ES, Maroudas D. Mechanism of hydrogen-induced crystallization of amorphous silicon. Nature. 418: 62-5. PMID 12097905 DOI: 10.1038/Nature00866  0.382
2002 Sriraman S, Aydil ES, Maroudas D. Visualizing the evolution of surface bond straining during radical-surface interactions in plasma deposition processes Ieee Transactions On Plasma Science. 30: 112-113. DOI: 10.1109/Tps.2002.1003949  0.386
2002 Agarwal S, Takano A, van de Sanden MCM, Maroudas D, Aydil ES. Abstraction of atomic hydrogen by atomic deuterium from an amorphous hydrogenated silicon surface The Journal of Chemical Physics. 117: 10805-10816. DOI: 10.1063/1.1522400  0.358
2002 Makeev AG, Maroudas D, Panagiotopoulos AZ, Kevrekidis IG. Coarse bifurcation analysis of kinetic Monte Carlo simulations: A lattice-gas model with lateral interactions Journal of Chemical Physics. 117: 8229-8240. DOI: 10.1063/1.1512274  0.315
2002 Sriraman S, Aydil ES, Maroudas D. Atomic-scale analysis of deposition and characterization of a-Si:H thin films grown from SiH radical precursor Journal of Applied Physics. 92: 842-852. DOI: 10.1063/1.1483920  0.403
2002 Makeev AG, Maroudas D, Kevrekidis IG. "Coarse" stability and bifurcation analysis using stochastic simulators: Kinetic Monte Carlo examples Journal of Chemical Physics. 116: 10083-10091. DOI: 10.1063/1.1476929  0.311
2002 Maroudas D, Zepeda-Ruiz LA, Pelzel RI, Nosho BZ, Henry Weinberg W. Strain relaxation and interfacial stability in III-V semiconductor strained-layer heteroepitaxy: Atomistic and continuum modeling and comparisons with experiments Computational Materials Science. 23: 250-259. DOI: 10.1016/S0927-0256(01)00230-0  0.373
2002 Maroudas D, Rauf Gungor M. Continuum and atomistic modeling of electromechanically-induced failure of ductile metallic thin films Computational Materials Science. 23: 242-249. DOI: 10.1016/S0927-0256(01)00229-4  0.393
2002 Agarwal S, Sriraman S, Takano A, van de Sanden M, Aydil ES, Maroudas D. Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces Surface Science. 515: L469-L474. DOI: 10.1016/S0039-6028(02)01879-4  0.336
2001 Aydil ES, Maroudas D, Marra DC, Kessels WMM, Agarwal S, Ramalingam S, Sriraman S, Van de Sanden MCM, Takano A. In Situ Probing and Atomistic Simulation of a-Si:H Plasma Deposition Mrs Proceedings. 664. DOI: 10.1557/Proc-664-A1.1  0.385
2001 Ramalingam S, Aydil ES, Maroudas D. Molecular dynamics study of the interactions of small thermal and energetic silicon clusters with crystalline and amorphous silicon surfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 634-644. DOI: 10.1116/1.1362682  0.382
2001 Zepeda-Ruiz LA, Pelzel RI, Nosho BZ, Weinberg WH, Maroudas D. Deformation behavior of coherently strained InAs/GaAs(111) heteroepitaxial systems: Theoretical calculations and experimental measurements Journal of Applied Physics. 90: 2689-2698. DOI: 10.1063/1.1392966  0.338
2001 Ramalingam S, Sriraman S, Aydil ES, Maroudas D. Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation Applied Physics Letters. 78: 2685-2687. DOI: 10.1063/1.1367298  0.403
2001 Gungor MR, Maroudas D. Modeling of electromechanically-induced failure of passivated metallic thin films used in device interconnections International Journal of Fracture. 109: 47-68. DOI: 10.1023/A:1011054731371  0.395
2001 Walch SP, Ramalingam S, Sriraman S, Aydil ES, Maroudas D. Mechanisms and energetics of SiH3 adsorption on the pristine Si(0 0 1)- (2×1) surface Chemical Physics Letters. 344: 249-255. DOI: 10.1016/S0009-2614(01)00777-1  0.336
2000 Zhao J, Maroudas D, Milstein F. Thermal activation of shear modulus instabilities in pressure-induced bcc→hcp transitions Physical Review B - Condensed Matter and Materials Physics. 62: 13799-13802. DOI: 10.1103/Physrevb.62.13799  0.302
2000 Zepeda-Ruiz LA, Pelzel RI, Weinberg WH, Maroudas D. Interfacial stability and structure in InAs/GaAs(111)A heteroepitaxy: Effects of buffer layer thickness and film compositional grading Applied Physics Letters. 77: 3352-3354. DOI: 10.1063/1.1327275  0.327
2000 Gungor MR, Maroudas D, Zhou S. Molecular-dynamics study of the mechanism and kinetics of void growth in ductile metallic thin films Applied Physics Letters. 77: 343-345. DOI: 10.1063/1.126971  0.391
2000 Pelzel RI, Zepeda-Ruiz LA, Weinberg WH, Maroudas D. Effects of buffer layer thickness and film compositional grading on strain relaxation kinetics in InAs/GaAs(111)A heteroepitaxy Surface Science. 463: L634-L640. DOI: 10.1016/S0039-6028(00)00638-5  0.327
2000 Gungor MR, Maroudas D. Current-induced non-linear dynamics of voids in metallic thin films: Morphological transition and surface wave propagation Surface Science. 461. DOI: 10.1016/S0039-6028(00)00616-6  0.381
2000 Sriraman S, Ramalingam S, Aydil ES, Maroudas D. Abstraction of hydrogen by SiH radicals from hydrogenated amorphous silicon surfaces Surface Science. 459. DOI: 10.1016/S0039-6028(00)00553-7  0.368
2000 Wirth BD, Odette GR, Maroudas D, Lucas GE. Dislocation loop structure, energy and mobility of self-interstitial atom clusters in bcc iron Journal of Nuclear Materials. 276: 33-40. DOI: 10.1016/S0022-3115(99)00166-X  0.322
2000 Walch SP, Ramalingam S, Aydil ES, Maroudas D. Mechanism and energetics of dissociative adsorption of SiH3 on the hydrogen-terminated Si (0 0 1) -( 2×1 ) surface Chemical Physics Letters. 329: 304-310. DOI: 10.1016/S0009-2614(00)01007-1  0.343
1999 Zepeda-Ruiz LA, Maroudas D, Weinberg WH. Multiscale analysis of interfacial stability and misfit dislocation formation in layer-by-layer semiconductor heteroepitaxy Materials Research Society Symposium - Proceedings. 538: 335-340. DOI: 10.1557/Proc-538-335  0.366
1999 Gungor MR, Gray LJ, Zhou SJ, Maroudas D. Modeling of failure in metallic thin films induced by stress and electromigration: a multiscale computational analysis Materials Research Society Symposium - Proceedings. 538: 263-268. DOI: 10.1557/Proc-538-263  0.378
1999 Wirth BD, Odette GR, Maroudas D, Lucas GE. Simulation of interstitial cluster mobility and cluster mediated surface topologies Materials Research Society Symposium - Proceedings. 504: 63-68. DOI: 10.1557/Proc-504-63  0.351
1999 Ramalingam S, Maroudas D, Aydil ES. Visualizing radical-surface interactions in plasma deposition processes: reactivity of SiH3 radicals with Si surfaces Ieee Transactions On Plasma Science. 27: 104-105. DOI: 10.1109/27.763067  0.329
1999 Ramalingam S, Mahalingam P, Aydil ES, Maroudas D. Theoretical study of the interactions of SiH2 radicals with silicon surfaces Journal of Applied Physics. 86: 5497-5508. DOI: 10.1063/1.371552  0.349
1999 Ramalingam S, Maroudas D, Aydil ES. Atomistic simulation study of the interactions of SiH3 radicals with silicon surfaces Journal of Applied Physics. 86: 2872-2888. DOI: 10.1063/1.371136  0.355
1999 Zepeda-Ruiz LA, Maroudas D, Weinberg WH. Theoretical study of the energetics, strain fields, and semicoherent interface structures in layer-by-layer semiconductor heteroepitaxy Journal of Applied Physics. 85: 3677-3695. DOI: 10.1063/1.369733  0.354
1999 Gungor MR, Maroudas D. Theoretical analysis of electromigration-induced failure of metallic thin films due to transgranular void propagation Journal of Applied Physics. 85: 2233-2246. DOI: 10.1063/1.369532  0.402
1999 Nosho BZ, Zepeda-Ruiz LA, Pelzel RI, Weinberg WH, Maroudas D. Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experimental measurements and computer simulations Applied Physics Letters. 75: 829-831. DOI: 10.1063/1.124527  0.375
1999 Zepeda-Ruiz LA, Nosho BZ, Pelzel RI, Weinberg WH, Maroudas D. Kinetics of strain relaxation through misfit dislocation formation in InAs/GaAs(111)A heteroepitaxy Surface Science. 441: L911-L916. DOI: 10.1016/S0039-6028(99)00852-3  0.319
1999 Gungor MR, Maroudas D. Nonhydrostatic stress effects on failure of passivated metallic thin films due to void surface electromigration Surface Science. 432. DOI: 10.1016/S0039-6028(99)00655-X  0.343
1998 Ho HS, Gungor MR, Maroudas D. Theoretical Analysis of Faceted Void Dynamics in Metallic Thin Films Under Electromigration Conditions Mrs Proceedings. 529. DOI: 10.1557/Proc-529-21  0.387
1998 Ramalingam S, Maroudas D, Aydil ES. Atomic-Scale Analysis of Plasma-Enhanced Chemical Vapor Deposition from SiH4/2 Plasmas on Si Substrates Mrs Proceedings. 507. DOI: 10.1557/Proc-507-673  0.357
1998 Ramalingam S, Maroudas D, Aydil ES. Interactions of SiH radicals with silicon surfaces: An atomic-scale simulation study Journal of Applied Physics. 84: 3895-3911. DOI: 10.1063/1.368569  0.383
1998 Gungor MR, Maroudas D, Gray LJ. Effects of mechanical stress on electromigration-driven transgranular void dynamics in passivated metallic thin films Applied Physics Letters. 73: 3848-3850. DOI: 10.1063/1.122913  0.36
1998 Maroudas D, Zepeda-Ruiz LA, Weinberg WH. Kinetics of strain relaxation through misfit dislocation formation in the growth of epitaxial films on compliant substrates Applied Physics Letters. 73: 753-755. DOI: 10.1063/1.121990  0.353
1998 Gungor MR, Maroudas D. Electromigration-induced failure of metallic thin films due to transgranular void propagation Applied Physics Letters. 72: 3452-3454. DOI: 10.1063/1.121663  0.393
1998 Ramalingam S, Maroudas D, Aydil ES. Atomistic simulation of SiH interactions with silicon surfaces during deposition from silane containing plasmas Applied Physics Letters. 72: 578-580. DOI: 10.1063/1.120764  0.389
1998 Zepeda-Ruiz LA, Maroudas D, Weinberg WH. Semicoherent interface formation and structure in InAs/GaAs(111)A heteroepitaxy Surface Science. 418: L68-L72. DOI: 10.1016/S0039-6028(98)00760-2  0.357
1998 Ramalingam S, Maroudas D, Aydil ES, Walch SP. Abstraction of hydrogen by SiH3 from hydrogen-terminated Si(001)-(2 × 1) surfaces Surface Science. 418. DOI: 10.1016/S0039-6028(98)00703-1  0.344
1998 Gungor MR, Maroudas D. Non-linear analysis of the morphological evolution of void surfaces in metallic thin films under surface electromigration conditions Surface Science. 415. DOI: 10.1016/S0039-6028(98)00565-2  0.403
1998 Maroudas D, Zepeda-Ruiz LA, Weinberg WH. Interfacial stability and misfit dislocation formation in InAs/GaAs(110) heteroepitaxy Surface Science. 411: L865-L871. DOI: 10.1016/S0039-6028(98)00399-9  0.368
1998 Gray LJ, Maroudas D, Enmark MN. Galerkin boundary integral method for evaluating surface derivatives Computational Mechanics. 22: 187-193. DOI: 10.1007/S004660050352  0.318
1997 Ramalingam S, Maroudas D, Aydil ES. Atomic-Scale Analysis of the Reactivity of Radicals from Silane/Hydrogen Plasmas with Silicon Surfaces Mrs Proceedings. 485. DOI: 10.1557/Proc-485-107  0.36
1997 Barone ME, Maroudas D. Defect-induced amorphization of crystalline silicon as a mechanism of disordered-region formation during ion implantation Journal of Computer-Aided Materials Design. 4: 63-73. DOI: 10.1023/A:1008622105256  0.315
1997 Meng B, Maroudas D, Weinberg WH. Structure of chemisorbed acetylene on the Si(001)-(2 × 1) surface and the effect of coadsorbed atomic hydrogen Chemical Physics Letters. 278: 97-101. DOI: 10.1016/S0009-2614(97)01009-9  0.319
1996 Maroudas D, Enmark MN, Leibig CM, Pantelides ST. Analysis of damage formation and propagation in metallic thin films under the action of thermal stresses and electric fields Journal of Computer-Aided Materials Design. 2: 231-258. DOI: 10.1007/Bf01198662  0.365
1995 Maroudas D, Pantelides ST. Theory and Computer Simulation of Grain-Boundary and Void Dynamics in Polycrystalline Conductors Mrs Proceedings. 391. DOI: 10.1557/Proc-391-151  0.351
1995 Maroudas D. Dynamics of transgranular voids in metallic thin films under electromigration conditions Applied Physics Letters. 67: 798. DOI: 10.1063/1.115471  0.351
1994 Brown RA, Maroudas D, Sinno T. Modelling point defect dynamics in the crystal growth of silicon Journal of Crystal Growth. 137: 12-25. DOI: 10.1016/0022-0248(94)91240-8  0.484
1993 Maroudas D, Brown RA. Calculation of thermodynamic and transport properties of intrinsic point defects in silicon Physical Review B. 47: 15562-15577. DOI: 10.1103/Physrevb.47.15562  0.401
1993 Maroudas D, Brown RA. Atomistic calculation of the self-interstitial diffusivity in silicon Applied Physics Letters. 62: 172-174. DOI: 10.1063/1.109361  0.376
1992 Maroudas D, Brown RA. Atomistic Simulations of Point Defect Properties in Silicon Mrs Proceedings. 278. DOI: 10.1557/Proc-278-115  0.468
1991 Maroudas D, Brown RA. Constitutive modeling of the effects of oxygen on the deformation behavior of silicon Journal of Materials Research. 6: 2337-2352. DOI: 10.1557/Jmr.1991.2337  0.372
1991 Maroudas D, Brown RA. Analysis of point-defect diffusion and drift in cubic-type lattices: Constitutive modeling Physical Review B. 44: 2567-2581. DOI: 10.1103/Physrevb.44.2567  0.377
1991 Maroudas D, Brown RA. Analysis of the effects of oxygen migration on dislocation motion in silicon Journal of Applied Physics. 69: 3865-3877. DOI: 10.1063/1.348443  0.36
1991 Maroudas D, Brown RA. Model for dislocation locking by oxygen gettering in silicon crystals Applied Physics Letters. 58: 1842-1844. DOI: 10.1063/1.105241  0.355
1991 Maroudas D, Brown RA. On the prediction of dislocation formation in semiconductor crystals grown from the melt: analysis of the Haasen model for plastic deformation dynamics Journal of Crystal Growth. 108: 399-415. DOI: 10.1016/0022-0248(91)90388-L  0.374
1990 Maroudas D, Brown RA. Analysis of Oxygen Gettering and Dislocation Locking in Silicon Mrs Proceedings. 209. DOI: 10.1557/Proc-209-597  0.443
1989 Maroudas D, Brown RA. Diffusion of Point Defects in a Stressed Simple Cubic Lattice Mrs Proceedings. 163. DOI: 10.1557/Proc-163-615  0.455
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