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Guangchi Xuan, Ph.D. - Publications

Affiliations: 
2007 Department of Electrical and Computer Engineering University of Delaware, Newark, DE, United States 
Area:
Electronics and Electrical Engineering
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Moriyama T, Cao R, Fan X, Xuan G, Nikoli? BK, Tserkovnyak Y, Kolodzey J, Xiao JQ. Tunnel barrier enhanced voltage signal generated by magnetization precession of a single ferromagnetic layer. Physical Review Letters. 100: 067602. PMID 18352517 DOI: 10.1103/Physrevlett.100.067602  0.521
2008 Xuan G, Adam TN, Lv PC, Sustersic N, Coppinger MJ, Kolodzey J, Suehle J, Fitzgerald E. Dry etching of SiGe alloys by xenon difluoride Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 385-388. DOI: 10.1116/1.2891245  0.632
2008 Xuan G, Lv PC, Zhang X, Kolodzey J, Desalvo G, Powell A. Silicon carbide terahertz emitting devices Journal of Electronic Materials. 37: 726-729. DOI: 10.1007/S11664-007-0371-6  0.649
2007 Xuan G, Ghosh S, Kim S, Lv PC, Buma T, Weng B, Bamer K, Kolodzey J. Terahertz sensing of materials International Journal of High Speed Electronics and Systems. 17: 121-126. DOI: 10.1142/9789812770332_0020  0.503
2007 Adam TN, Kim S, Lv PC, Xuan G, Ray SK, Troeger RT, Prather D, Kolodzey J. Cyclic deep reactive ion etching with mask replenishment Journal of Micromechanics and Microengineering. 17: 1773-1780. DOI: 10.1088/0960-1317/17/9/004  0.733
2007 Xuan G, Kim S, Coppinger M, Sustersic N, Kolodzey J, Lv PC. Increasing the operating temperature of boron doped silicon terahertz electroluminescence devices Applied Physics Letters. 91. DOI: 10.1063/1.2768195  0.638
2006 Weng B, Xuan G, Kolodzey J, Barner KE. Empirical mode decomposition as a tool for DNA sequence analysis from terahertz spectroscopy measurements 2006 Ieee International Workshop On Genomic Signal Processing and Statistics, Gensips 2006. 63-64. DOI: 10.1109/GENSIPS.2006.353157  0.45
2005 Xuan G, Kolodzey J, Kapoor V, Gonye G. Characteristics of field-effect devices with gate oxide modification by DNA Applied Physics Letters. 87. DOI: 10.1063/1.2041826  0.599
2004 Xuan G, Kolodzey J, Kapoor V, Gonye G. Electrical effects of DNA molecules on silicon field effect transistor International Journal of High Speed Electronics and Systems. 14: 684-689. DOI: 10.1142/S0129156404002673  0.525
2004 Dashiell MW, Xuan G, Ansorge E, Zhang X, Kolodzey J, DeSalvo GC, Gigante JR, Malkowski WJ, Clarke RC, Liu J, Skowronski M. Pseudomorphic SiC alloys formed by Ge ion implantation Applied Physics Letters. 85: 2253-2255. DOI: 10.1063/1.1791741  0.714
2004 Troeger RT, Adam TN, Ray SK, Lv P, Kim S, Xuan G, Ghosh S, Kolodzey J. Terahertz-emitting devices based on boron-doped silicon Ieee Mtt-S International Microwave Symposium Digest. 1: 361-364.  0.747
2002 Dashiell MW, Xuan G, Zhang X, Ansorge E, Kolodzey J. Strained SiC:Ge layers in 4H SiC formed by Ge implantation Materials Research Society Symposium - Proceedings. 742: 321-326. DOI: 10.1557/Proc-742-K6.7  0.727
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